ATE205762T1 - Verfahren zur herstellung von si-al legierungen zur verpackung von electronischen bauteilen - Google Patents

Verfahren zur herstellung von si-al legierungen zur verpackung von electronischen bauteilen

Info

Publication number
ATE205762T1
ATE205762T1 AT96924997T AT96924997T ATE205762T1 AT E205762 T1 ATE205762 T1 AT E205762T1 AT 96924997 T AT96924997 T AT 96924997T AT 96924997 T AT96924997 T AT 96924997T AT E205762 T1 ATE205762 T1 AT E205762T1
Authority
AT
Austria
Prior art keywords
alloy
silicon
producing
alloys
electronic components
Prior art date
Application number
AT96924997T
Other languages
English (en)
Inventor
Alan George Leatham
Andrew Josef Widawski Ogilvy
Luis Elias
Original Assignee
Osprey Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osprey Metals Ltd filed Critical Osprey Metals Ltd
Application granted granted Critical
Publication of ATE205762T1 publication Critical patent/ATE205762T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/10Alloys containing non-metals
    • C22C1/1036Alloys containing non-metals starting from a melt
    • C22C1/1042Alloys containing non-metals starting from a melt by atomising
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/115Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C25/00Alloys based on beryllium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C22C32/0063Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/6875Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/17Containers or parts thereof characterised by their materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12486Laterally noncoextensive components [e.g., embedded, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Conductive Materials (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
AT96924997T 1995-07-19 1996-07-18 Verfahren zur herstellung von si-al legierungen zur verpackung von electronischen bauteilen ATE205762T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9514777.3A GB9514777D0 (en) 1995-07-19 1995-07-19 Silicon alloys for electronic packaging
PCT/GB1996/001730 WO1997003775A1 (en) 1995-07-19 1996-07-18 Silicon alloys for electronic packaging

Publications (1)

Publication Number Publication Date
ATE205762T1 true ATE205762T1 (de) 2001-10-15

Family

ID=10777919

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96924997T ATE205762T1 (de) 1995-07-19 1996-07-18 Verfahren zur herstellung von si-al legierungen zur verpackung von electronischen bauteilen

Country Status (9)

Country Link
US (1) US6312535B1 (de)
EP (1) EP0839078B1 (de)
JP (1) JP3892039B2 (de)
AT (1) ATE205762T1 (de)
DE (1) DE69615375T2 (de)
DK (1) DK0839078T3 (de)
ES (1) ES2164904T3 (de)
GB (2) GB9514777D0 (de)
WO (1) WO1997003775A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2319668B (en) * 1996-11-23 2001-09-12 Marconi Gec Ltd Housing for electrical apparatus
EP1028476A4 (de) * 1998-09-08 2007-11-28 Sumitomo Metal Ind Negatives elektroden-material für nichtwässerige elektroden, sekundäre batterie und verfahren für deren herstellung
JP2002294358A (ja) * 2001-04-02 2002-10-09 Taiheiyo Cement Corp 熱伝導性複合材料
US6475263B1 (en) * 2001-04-11 2002-11-05 Crucible Materials Corp. Silicon aluminum alloy of prealloyed powder and method of manufacture
CN1255563C (zh) * 2001-05-24 2006-05-10 弗莱氏金属公司 热界面材料和受热器构型
EP1695382A4 (de) * 2001-05-24 2007-10-10 Fry Metals Inc Thermisches grenzflächenmaterial und lot-preforms
KR100453518B1 (ko) * 2001-11-01 2004-10-20 한국과학기술연구원 반도체 소자용 박스형 구조재용 Si-Al 합금의 제조방법
US7259468B2 (en) * 2004-04-30 2007-08-21 Advanced Chip Engineering Technology Inc. Structure of package
JP4585379B2 (ja) * 2005-06-02 2010-11-24 太平洋セメント株式会社 金属−セラミックス複合材料の製造方法
US10217534B2 (en) 2011-09-23 2019-02-26 Edison Welding Institute, Inc. Method for joining silicon carbide components to one another
US20130075039A1 (en) * 2011-09-23 2013-03-28 Edison Welding Institute, Inc. System for fabricating silicon carbide assemblies
EP2606996A1 (de) * 2011-12-23 2013-06-26 EPoS S.r.L. Verfahren zum Sinter von Metallmatrixverbundmaterialien

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3573137D1 (en) * 1984-10-03 1989-10-26 Sumitomo Electric Industries Material for a semiconductor device and process for its manufacture
EP0418299A1 (de) * 1988-06-06 1991-03-27 Osprey Metals Limited Herstellung von bekleidungen durch zerstäuben einer metallschmelze
US5022455A (en) * 1989-07-31 1991-06-11 Sumitomo Electric Industries, Ltd. Method of producing aluminum base alloy containing silicon
GB9015832D0 (en) * 1990-07-19 1990-09-05 Osprey Metals Ltd Introducing means
DE69120299T2 (de) * 1990-10-31 1997-01-23 Sumitomo Electric Industries Übereutektisches aluminium-silikon-pulver und dessen herstellung
JPH05331635A (ja) * 1992-05-29 1993-12-14 Kobe Steel Ltd Al含有Si基合金ターゲット材およびその製造方法
NO175543C (no) * 1992-11-18 1994-10-26 Elkem As Silisiumbasert legering, fremgangsmåte til fremstilling av slik legering samt fremgangsmåte for fremstilling av konsoliderte produkter fra silisiumbasert legering
JPH0892683A (ja) * 1994-09-27 1996-04-09 Sumitomo Electric Ind Ltd 窒素化合アルミニウム−シリコン粉末合金およびその製造方法

Also Published As

Publication number Publication date
DK0839078T3 (da) 2001-12-27
GB2317900A (en) 1998-04-08
DE69615375T2 (de) 2002-08-14
GB9800723D0 (en) 1998-03-11
ES2164904T3 (es) 2002-03-01
EP0839078B1 (de) 2001-09-19
JPH11509480A (ja) 1999-08-24
US6312535B1 (en) 2001-11-06
DE69615375D1 (de) 2001-10-25
EP0839078A1 (de) 1998-05-06
GB2317900B (en) 2000-03-01
JP3892039B2 (ja) 2007-03-14
WO1997003775A1 (en) 1997-02-06
GB9514777D0 (en) 1995-09-20

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
EEFA Change of the company name
REN Ceased due to non-payment of the annual fee