ATE412782T1 - Hochreines niobmetall und erzeugnisse daraus und verfahren zu dessen herstellung - Google Patents

Hochreines niobmetall und erzeugnisse daraus und verfahren zu dessen herstellung

Info

Publication number
ATE412782T1
ATE412782T1 AT01977066T AT01977066T ATE412782T1 AT E412782 T1 ATE412782 T1 AT E412782T1 AT 01977066 T AT01977066 T AT 01977066T AT 01977066 T AT01977066 T AT 01977066T AT E412782 T1 ATE412782 T1 AT E412782T1
Authority
AT
Austria
Prior art keywords
niobium
metal
high purity
reaction container
salt
Prior art date
Application number
AT01977066T
Other languages
English (en)
Inventor
Christopher Michaluk
Louis Huber
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Application granted granted Critical
Publication of ATE412782T1 publication Critical patent/ATE412782T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/20—Obtaining niobium, tantalum or vanadium
    • C22B34/24—Obtaining niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/04—Dry methods smelting of sulfides or formation of mattes by aluminium, other metals or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Catalysts (AREA)
AT01977066T 2000-05-22 2001-05-21 Hochreines niobmetall und erzeugnisse daraus und verfahren zu dessen herstellung ATE412782T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20615900P 2000-05-22 2000-05-22

Publications (1)

Publication Number Publication Date
ATE412782T1 true ATE412782T1 (de) 2008-11-15

Family

ID=22765229

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01977066T ATE412782T1 (de) 2000-05-22 2001-05-21 Hochreines niobmetall und erzeugnisse daraus und verfahren zu dessen herstellung

Country Status (11)

Country Link
US (2) US6863750B2 (de)
EP (1) EP1287172B1 (de)
JP (1) JP5341292B2 (de)
KR (1) KR100815034B1 (de)
CN (1) CN1328409C (de)
AT (1) ATE412782T1 (de)
AU (1) AU2001296213A1 (de)
DE (1) DE60136351D1 (de)
MY (1) MY134162A (de)
TW (1) TW587101B (de)
WO (1) WO2001096620A2 (de)

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TWI341337B (en) 2003-01-07 2011-05-01 Cabot Corp Powder metallurgy sputtering targets and methods of producing same
WO2004103906A2 (en) 2003-05-19 2004-12-02 Cabot Corporation Methods of making a niobium metal oxide and oxygen reduced niobium oxides
US7228722B2 (en) * 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
KR20060029622A (ko) * 2003-06-20 2006-04-06 캐보트 코포레이션 백킹 플레이트에 스퍼터 타겟 부착을 위한 방법 및 디자인
US20070144623A1 (en) * 2004-02-18 2007-06-28 Wickersham Charles E Jr Ultrasonic method for detecting banding in metals
US8252126B2 (en) 2004-05-06 2012-08-28 Global Advanced Metals, Usa, Inc. Sputter targets and methods of forming same by rotary axial forging
US7666243B2 (en) 2004-10-27 2010-02-23 H.C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
JP2006161066A (ja) * 2004-12-02 2006-06-22 Seiko Epson Corp スパッタリングターゲットとその製造方法及びスパッタリング装置並びに液体噴射ヘッド
US7998287B2 (en) * 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
US8128765B2 (en) * 2005-04-05 2012-03-06 Jefferson Science Associates, Llc Large grain cavities from pure niobium ingot
EP1876258A4 (de) * 2005-04-28 2008-08-13 Nippon Mining Co Sputtertarget
US20070044873A1 (en) 2005-08-31 2007-03-01 H. C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
JP4034802B2 (ja) * 2005-11-22 2008-01-16 株式会社神戸製鋼所 超電導線材製造用ＮｂまたはＮｂ基合金棒およびＮｂ３Ｓｎ超電導線材の製造方法
EE05493B1 (et) * 2006-03-07 2011-12-15 Cabot Corporation Meetod l?pliku paksusega metallesemete valmistamiseks, saadud metallplaat ja selle valmistamiseks kasutatav BCC- metall
CN100357464C (zh) * 2006-06-03 2007-12-26 郭青蔚 草酸体系萃取法制取无氟氧化铌工艺
CN100529150C (zh) * 2007-12-17 2009-08-19 西部金属材料股份有限公司 一种制备金属铌带材的方法
JP5308683B2 (ja) * 2008-01-29 2013-10-09 株式会社神戸製鋼所 ブロンズ法Ｎｂ３Ｓｎ超電導線材製造用ＮｂまたはＮｂ基合金棒、Ｎｂ３Ｓｎ超電導線材製造用前駆体およびその製造方法、並びにＮｂ３Ｓｎ超電導線材
US9834829B1 (en) 2009-07-07 2017-12-05 H.C. Starck Inc. Niobium-based alloy that is resistant to aqueous corrosion
US20110008201A1 (en) * 2009-07-07 2011-01-13 H.C. Starck Inc. Niobium based alloy that is resistant to aqueous corrosion
EP2810722B1 (de) * 2012-02-02 2016-04-06 Shinohara Press Service Co., Ltd. Verfahren zur herstellung reiner niob-endgruppenkomponenten eines supraleiter-beschleunigungsraumes
WO2014156918A1 (ja) * 2013-03-27 2014-10-02 Jx日鉱日石金属株式会社 ニオブスパッタリングターゲット
CN103316912B (zh) * 2013-07-09 2014-12-17 武汉科技大学 一种极薄铌带的轧制方法
CA3120873A1 (en) 2018-12-12 2020-06-18 Craig M. Sungail Spherical niobium alloy powder, products containing the same, and methods of making the same
US11885009B2 (en) * 2019-02-12 2024-01-30 Uchicago Argonne, Llc Method of making thin films
WO2020195121A1 (ja) * 2019-03-26 2020-10-01 Ｊｘ金属株式会社 ニオブスパッタリングターゲット
CN110983218B (zh) * 2019-12-25 2021-09-03 西部超导材料科技股份有限公司 一种组织均匀的小规格纯铌棒材的制备方法

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Also Published As

Publication number Publication date
TW587101B (en) 2004-05-11
EP1287172B1 (de) 2008-10-29
EP1287172A2 (de) 2003-03-05
WO2001096620A3 (en) 2002-08-08
US6863750B2 (en) 2005-03-08
US20050263217A1 (en) 2005-12-01
CN1449452A (zh) 2003-10-15
JP2004511651A (ja) 2004-04-15
MY134162A (en) 2007-11-30
WO2001096620A2 (en) 2001-12-20
AU2001296213A1 (en) 2001-12-24
JP5341292B2 (ja) 2013-11-13
KR100815034B1 (ko) 2008-03-18
KR20030001543A (ko) 2003-01-06
DE60136351D1 (de) 2008-12-11
CN1328409C (zh) 2007-07-25
US20020072475A1 (en) 2002-06-13

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