ATE224101T1 - Halbleiterverfahren zur herstellung eines elektrisch leitenden kontaktanschlusses - Google Patents

Halbleiterverfahren zur herstellung eines elektrisch leitenden kontaktanschlusses

Info

Publication number
ATE224101T1
ATE224101T1 AT96907011T AT96907011T ATE224101T1 AT E224101 T1 ATE224101 T1 AT E224101T1 AT 96907011 T AT96907011 T AT 96907011T AT 96907011 T AT96907011 T AT 96907011T AT E224101 T1 ATE224101 T1 AT E224101T1
Authority
AT
Austria
Prior art keywords
contact opening
material layer
substrate
etching
electrically conductive
Prior art date
Application number
AT96907011T
Other languages
English (en)
Inventor
Viju K Mathews
Nanseng Jeng
Pierre C Fazan
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/391,719 external-priority patent/US5580821A/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE224101T1 publication Critical patent/ATE224101T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
AT96907011T 1995-02-21 1996-01-23 Halbleiterverfahren zur herstellung eines elektrisch leitenden kontaktanschlusses ATE224101T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/391,719 US5580821A (en) 1995-02-21 1995-02-21 Semiconductor processing method of forming an electrically conductive contact plug
US08/551,829 US5658829A (en) 1995-02-21 1995-11-07 Semiconductor processing method of forming an electrically conductive contact plug
PCT/US1996/000929 WO1996026542A1 (en) 1995-02-21 1996-01-23 Semiconductor processing method of forming an electrically conductive contact plug

Publications (1)

Publication Number Publication Date
ATE224101T1 true ATE224101T1 (de) 2002-09-15

Family

ID=27013606

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96907011T ATE224101T1 (de) 1995-02-21 1996-01-23 Halbleiterverfahren zur herstellung eines elektrisch leitenden kontaktanschlusses

Country Status (7)

Country Link
US (3) US5658829A (de)
EP (1) EP0811247B1 (de)
JP (1) JP3593133B2 (de)
KR (1) KR100399257B1 (de)
AT (1) ATE224101T1 (de)
DE (1) DE69623598T2 (de)
WO (1) WO1996026542A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5658829A (en) * 1995-02-21 1997-08-19 Micron Technology, Inc. Semiconductor processing method of forming an electrically conductive contact plug
US5994220A (en) 1996-02-02 1999-11-30 Micron Technology, Inc. Method for forming a semiconductor connection with a top surface having an enlarged recess
US5956608A (en) * 1996-06-20 1999-09-21 Applied Materials, Inc. Modulating surface morphology of barrier layers
US5970374A (en) * 1996-10-18 1999-10-19 Chartered Semiconductor Manufacturing Ltd. Method for forming contacts and vias with improved barrier metal step-coverage
US6245594B1 (en) * 1997-08-05 2001-06-12 Micron Technology, Inc. Methods for forming conductive micro-bumps and recessed contacts for flip-chip technology and method of flip-chip assembly
US6066552A (en) 1998-08-25 2000-05-23 Micron Technology, Inc. Method and structure for improved alignment tolerance in multiple, singularized plugs
US6228754B1 (en) * 1999-01-05 2001-05-08 Advanced Micro Devices, Inc. Method for forming semiconductor seed layers by inert gas sputter etching
US6096651A (en) * 1999-01-11 2000-08-01 Taiwan Semiconductor Manufacturing Company Key-hole reduction during tungsten plug formation
US20030015496A1 (en) * 1999-07-22 2003-01-23 Sujit Sharan Plasma etching process
US6274483B1 (en) * 2000-01-18 2001-08-14 Taiwan Semiconductor Manufacturing Company Method to improve metal line adhesion by trench corner shape modification
US6583053B2 (en) * 2001-03-23 2003-06-24 Texas Instruments Incorporated Use of a sacrificial layer to facilitate metallization for small features
TWI226059B (en) * 2001-06-11 2005-01-01 Sony Corp Method for manufacturing master disk for optical recording medium having pits and projections, stamper, and optical recording medium
AU2003212146A1 (en) * 2002-03-13 2003-09-22 The University Of British Columbia High dynamic range display devices
US7778812B2 (en) * 2005-01-07 2010-08-17 Micron Technology, Inc. Selecting data to verify in hardware device model simulation test generation
US7758763B2 (en) * 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
MX2009008192A (es) * 2007-02-01 2009-08-12 Dolby Lab Licensing Corp Calibracion de medios de visualizacion que tienen iluminacion posterior variable en forma espacial.
US20080213991A1 (en) * 2007-03-02 2008-09-04 Airdio Wireless Inc. Method of forming plugs
JP2009194195A (ja) * 2008-02-15 2009-08-27 Panasonic Corp 半導体装置及びその製造方法
US20100214282A1 (en) 2009-02-24 2010-08-26 Dolby Laboratories Licensing Corporation Apparatus for providing light source modulation in dual modulator displays
JP2011029552A (ja) * 2009-07-29 2011-02-10 Renesas Electronics Corp 半導体装置およびその製造方法
US8691622B2 (en) 2012-05-25 2014-04-08 Micron Technology, Inc. Memory cells and methods of forming memory cells

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Publication number Priority date Publication date Assignee Title
US4372034B1 (en) * 1981-03-26 1998-07-21 Intel Corp Process for forming contact openings through oxide layers
FR2588417B1 (fr) * 1985-10-03 1988-07-29 Bull Sa Procede de formation d'un reseau metallique multicouche d'interconnexion des composants d'un circuit integre de haute densite et circuit integre en resultant
US4999318A (en) * 1986-11-12 1991-03-12 Hitachi, Ltd. Method for forming metal layer interconnects using stepped via walls
DE3851802T2 (de) * 1987-07-20 1995-02-09 Nippon Telegraph & Telephone Methode zur Verbindung von Leitungen durch Verbindungslöcher.
US5320979A (en) * 1987-07-20 1994-06-14 Nippon Telegraph And Telephone Corporation Method of connecting wirings through connection hole
FR2630588A1 (fr) * 1988-04-22 1989-10-27 Philips Nv Procede pour realiser une configuration d'interconnexion sur un dispositif semiconducteur notamment un circuit a densite d'integration elevee
DE69023765T2 (de) * 1990-07-31 1996-06-20 Ibm Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten Feldeffekttransistoren mit Wolfram-Gitter und sich daraus ergebende Struktur.
JPH04251926A (ja) * 1991-01-10 1992-09-08 Fujitsu Ltd 半導体装置の製造方法
JP3200455B2 (ja) * 1991-01-14 2001-08-20 沖電気工業株式会社 半導体記憶装置の製造方法
JPH04241926A (ja) * 1991-01-17 1992-08-28 Sumitomo Electric Ind Ltd チューブ押出用無調心ヘッド
US5124780A (en) * 1991-06-10 1992-06-23 Micron Technology, Inc. Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization
US5203957A (en) * 1991-06-12 1993-04-20 Taiwan Semiconductor Manufacturing Company Contact sidewall tapering with argon sputtering
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5269880A (en) * 1992-04-03 1993-12-14 Northern Telecom Limited Tapering sidewalls of via holes
US5371042A (en) * 1992-06-16 1994-12-06 Applied Materials, Inc. Method of filling contacts in semiconductor devices
US5288665A (en) * 1992-08-12 1994-02-22 Applied Materials, Inc. Process for forming low resistance aluminum plug in via electrically connected to overlying patterned metal layer for integrated circuit structures
US5286675A (en) * 1993-04-14 1994-02-15 Industrial Technology Research Institute Blanket tungsten etchback process using disposable spin-on-glass
US5366929A (en) * 1993-05-28 1994-11-22 Cypress Semiconductor Corp. Method for making reliable selective via fills
JPH0737869A (ja) * 1993-07-20 1995-02-07 Nippon Steel Corp 半導体装置の製造方法
US5320981A (en) * 1993-08-10 1994-06-14 Micron Semiconductor, Inc. High accuracy via formation for semiconductor devices
US5585308A (en) * 1993-12-23 1996-12-17 Sgs-Thomson Microelectronics, Inc. Method for improved pre-metal planarization
US5635423A (en) * 1994-10-11 1997-06-03 Advanced Micro Devices, Inc. Simplified dual damascene process for multi-level metallization and interconnection structure
DE69533823D1 (de) * 1994-12-29 2005-01-05 St Microelectronics Inc Elektrische Verbindungsstruktur auf einer integrierten Schaltungsanordnung mit einem Zapfen mit vergrössertem Kopf
US5658829A (en) * 1995-02-21 1997-08-19 Micron Technology, Inc. Semiconductor processing method of forming an electrically conductive contact plug
US5970374A (en) * 1996-10-18 1999-10-19 Chartered Semiconductor Manufacturing Ltd. Method for forming contacts and vias with improved barrier metal step-coverage

Also Published As

Publication number Publication date
US5658829A (en) 1997-08-19
DE69623598T2 (de) 2003-05-28
KR19980702371A (ko) 1998-07-15
US6245671B1 (en) 2001-06-12
WO1996026542A1 (en) 1996-08-29
KR100399257B1 (ko) 2003-12-18
JPH11500272A (ja) 1999-01-06
US5933754A (en) 1999-08-03
JP3593133B2 (ja) 2004-11-24
DE69623598D1 (de) 2002-10-17
EP0811247A1 (de) 1997-12-10
EP0811247B1 (de) 2002-09-11

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Legal Events

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