ATE224584T1 - Verfahren und vorrichtung zur reinigung eines plasmareaktors - Google Patents

Verfahren und vorrichtung zur reinigung eines plasmareaktors

Info

Publication number
ATE224584T1
ATE224584T1 AT96308747T AT96308747T ATE224584T1 AT E224584 T1 ATE224584 T1 AT E224584T1 AT 96308747 T AT96308747 T AT 96308747T AT 96308747 T AT96308747 T AT 96308747T AT E224584 T1 ATE224584 T1 AT E224584T1
Authority
AT
Austria
Prior art keywords
plasma
wafer
coupling
chamber
during processing
Prior art date
Application number
AT96308747T
Other languages
English (en)
Inventor
Yan Ye
Hiroji Hanawa
Diana Xiaobing Ma
Gerald Zheyao Yin
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE224584T1 publication Critical patent/ATE224584T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)
AT96308747T 1995-12-04 1996-12-03 Verfahren und vorrichtung zur reinigung eines plasmareaktors ATE224584T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/567,376 US5817534A (en) 1995-12-04 1995-12-04 RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers

Publications (1)

Publication Number Publication Date
ATE224584T1 true ATE224584T1 (de) 2002-10-15

Family

ID=24266907

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96308747T ATE224584T1 (de) 1995-12-04 1996-12-03 Verfahren und vorrichtung zur reinigung eines plasmareaktors

Country Status (7)

Country Link
US (1) US5817534A (de)
EP (1) EP0778607B1 (de)
JP (1) JPH09181057A (de)
KR (1) KR100430644B1 (de)
AT (1) ATE224584T1 (de)
DE (1) DE69623731T2 (de)
TW (1) TW301840B (de)

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KR100415435B1 (ko) 1999-09-21 2004-01-31 주성엔지니어링(주) 반도체 소자 제조장치
US6291358B1 (en) 1999-10-15 2001-09-18 Micron Technology, Inc. Plasma deposition tool operating method
KR20010056655A (ko) * 1999-12-16 2001-07-04 황 철 주 반도체 소자 제조 장치
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TW518686B (en) * 1999-12-29 2003-01-21 Tokyo Electron Ltd System for automatic control of the wall bombardment to control wall deposition
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KR20030056522A (ko) * 2001-12-28 2003-07-04 동부전자 주식회사 반도체 공정 쳄버의 제어 장치
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US7695633B2 (en) * 2005-10-18 2010-04-13 Applied Materials, Inc. Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
KR100733080B1 (ko) 2006-01-03 2007-06-29 삼성전자주식회사 식각장치
US8911590B2 (en) * 2006-02-27 2014-12-16 Lam Research Corporation Integrated capacitive and inductive power sources for a plasma etching chamber
US20070246162A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency
US20070245958A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution
US20070246443A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation
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US20070245961A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation
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US7727413B2 (en) * 2006-04-24 2010-06-01 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
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US7550090B2 (en) * 2007-01-23 2009-06-23 Applied Materials, Inc. Oxygen plasma clean to remove carbon species deposited on a glass dome surface
JP5281766B2 (ja) * 2007-07-31 2013-09-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
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KR100919487B1 (ko) * 2009-01-22 2009-09-28 주식회사 맥시스 플라즈마 처리 장치
JP5451324B2 (ja) * 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5198616B2 (ja) * 2011-03-28 2013-05-15 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9209032B2 (en) * 2013-03-15 2015-12-08 Tokyo Electron Limited Electric pressure systems for control of plasma properties and uniformity
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN107154332B (zh) * 2016-03-03 2019-07-19 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及方法
WO2020166048A1 (ja) 2019-02-15 2020-08-20 株式会社日立ハイテクノロジーズ ガス成分のモニタ方法及びその装置並びにそれを用いた処理装置
JP7462383B2 (ja) * 2019-04-15 2024-04-05 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置
US12606907B2 (en) * 2021-04-30 2026-04-21 Applied Materials, Inc. Method and apparatus with high conductance components for chamber cleaning

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Also Published As

Publication number Publication date
KR970052753A (ko) 1997-07-29
TW301840B (en) 1997-04-01
JPH09181057A (ja) 1997-07-11
DE69623731T2 (de) 2003-06-05
KR100430644B1 (ko) 2004-09-16
EP0778607B1 (de) 2002-09-18
EP0778607A1 (de) 1997-06-11
US5817534A (en) 1998-10-06
DE69623731D1 (de) 2002-10-24

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