ATE227887T1 - Verfahren zur herstellung eines elektronischen schaltungsmoduls mit hoher integrationsdichte - Google Patents

Verfahren zur herstellung eines elektronischen schaltungsmoduls mit hoher integrationsdichte

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Publication number
ATE227887T1
ATE227887T1 AT93905940T AT93905940T ATE227887T1 AT E227887 T1 ATE227887 T1 AT E227887T1 AT 93905940 T AT93905940 T AT 93905940T AT 93905940 T AT93905940 T AT 93905940T AT E227887 T1 ATE227887 T1 AT E227887T1
Authority
AT
Austria
Prior art keywords
circuit module
producing
electronic circuit
high integration
integration density
Prior art date
Application number
AT93905940T
Other languages
English (en)
Inventor
Mark B Spitzer
Jeffrey Jacobsen
Duy-Phach Vu
Brenda Dingle
Ngwe Cheong
Original Assignee
Kopin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/834,849 external-priority patent/US5258325A/en
Application filed by Kopin Corp filed Critical Kopin Corp
Application granted granted Critical
Publication of ATE227887T1 publication Critical patent/ATE227887T1/de

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0214Manufacture or treatment of multiple TFTs using temporary substrates
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B3/00Apparatus for testing the eyes; Instruments for examining the eyes
    • A61B3/10Objective types, i.e. instruments for examining the eyes independent of the patients' perceptions or reactions
    • A61B3/113Objective types, i.e. instruments for examining the eyes independent of the patients' perceptions or reactions for determining or recording eye movement
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    • G02B27/0093Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for monitoring data relating to the user, e.g. head-tracking, eye-tracking
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    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional [2D] radiating surfaces
    • HELECTRICITY
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    • H10D30/67Thin-film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • HELECTRICITY
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    • HELECTRICITY
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    • HELECTRICITY
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    • H01ELECTRIC ELEMENTS
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    • H04N5/00Details of television systems
    • H04N5/74Projection arrangements for image reproduction, e.g. using eidophor
    • H04N5/7475Constructional details of television projection apparatus
    • H04N5/7491Constructional details of television projection apparatus of head mounted projectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
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    • H10D30/673Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
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    • H10P72/7432Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/135Removal of substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/15Silicon on sapphire SOS

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  • General Physics & Mathematics (AREA)
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  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Theoretical Computer Science (AREA)
  • Biophysics (AREA)
  • General Health & Medical Sciences (AREA)
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AT93905940T 1992-02-13 1993-02-12 Verfahren zur herstellung eines elektronischen schaltungsmoduls mit hoher integrationsdichte ATE227887T1 (de)

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US07/834,849 US5258325A (en) 1990-12-31 1992-02-13 Method for manufacturing a semiconductor device using a circuit transfer film
US07/874,588 US5376561A (en) 1990-12-31 1992-04-24 High density electronic circuit modules
PCT/US1993/001322 WO1993016491A1 (en) 1992-02-13 1993-02-12 High density electronic circuit modules

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EP (2) EP0626099B1 (de)
JP (1) JPH07504782A (de)
AT (1) ATE227887T1 (de)
CA (1) CA2129123A1 (de)
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Families Citing this family (217)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143582A (en) * 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
CN1244891C (zh) 1992-08-27 2006-03-08 株式会社半导体能源研究所 有源矩阵显示器
US5705424A (en) * 1992-09-11 1998-01-06 Kopin Corporation Process of fabricating active matrix pixel electrodes
US6608654B2 (en) 1992-09-11 2003-08-19 Kopin Corporation Methods of fabricating active matrix pixel electrodes
CA2173123A1 (en) 1993-09-30 1995-04-06 Paul M. Zavracky Three-dimensional processor using transferred thin film circuits
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5473222A (en) * 1994-07-05 1995-12-05 Delco Electronics Corporation Active matrix vacuum fluorescent display with microprocessor integration
DE4433833A1 (de) * 1994-09-22 1996-03-28 Fraunhofer Ges Forschung Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung unter Erreichung hoher Systemausbeuten
EP0746875B1 (de) * 1994-12-23 2002-03-06 Koninklijke Philips Electronics N.V. Verfahren zur herstellung von halbleiterbauteilen mit halbleiterelementen, die in einer halbleiterschicht gebildet wurden, welche auf einen trägerwafer geklebt sind
JP2900229B2 (ja) 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5757456A (en) * 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US5674758A (en) * 1995-06-06 1997-10-07 Regents Of The University Of California Silicon on insulator achieved using electrochemical etching
FR2747239B1 (fr) * 1996-04-04 1998-05-15 Alcatel Espace Module hyperfrequence compact
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
JP4619644B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JP4619461B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
JP4619645B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
DE69739376D1 (de) 1996-08-27 2009-06-04 Seiko Epson Corp Ablösungsverfahren und Verfahren zum Übertragen eines Dünnfilm-Bauelements
JPH10104663A (ja) 1996-09-27 1998-04-24 Semiconductor Energy Lab Co Ltd 電気光学装置およびその作製方法
USRE38466E1 (en) 1996-11-12 2004-03-16 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
US5773331A (en) * 1996-12-17 1998-06-30 International Business Machines Corporation Method for making single and double gate field effect transistors with sidewall source-drain contacts
US6786420B1 (en) 1997-07-15 2004-09-07 Silverbrook Research Pty. Ltd. Data distribution mechanism in the form of ink dots on cards
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
EP0886306A1 (de) * 1997-06-16 1998-12-23 IMEC vzw Verfahren zum Verbinden von Substraten bei niedriger Temperatur
US6618117B2 (en) 1997-07-12 2003-09-09 Silverbrook Research Pty Ltd Image sensing apparatus including a microcontroller
US6624848B1 (en) 1997-07-15 2003-09-23 Silverbrook Research Pty Ltd Cascading image modification using multiple digital cameras incorporating image processing
US6690419B1 (en) 1997-07-15 2004-02-10 Silverbrook Research Pty Ltd Utilising eye detection methods for image processing in a digital image camera
US7110024B1 (en) 1997-07-15 2006-09-19 Silverbrook Research Pty Ltd Digital camera system having motion deblurring means
US6879341B1 (en) 1997-07-15 2005-04-12 Silverbrook Research Pty Ltd Digital camera system containing a VLIW vector processor
US20040119829A1 (en) 1997-07-15 2004-06-24 Silverbrook Research Pty Ltd Printhead assembly for a print on demand digital camera system
US6388652B1 (en) * 1997-08-20 2002-05-14 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device
WO1999019902A1 (en) * 1997-10-14 1999-04-22 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device by low temperature cvd
NO308149B1 (no) 1998-06-02 2000-07-31 Thin Film Electronics Asa Skalerbar, integrert databehandlingsinnretning
JP4126747B2 (ja) * 1998-02-27 2008-07-30 セイコーエプソン株式会社 3次元デバイスの製造方法
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 3次元デバイスの製造方法
US6129804A (en) * 1998-05-01 2000-10-10 International Business Machines Corporation TFT panel alignment and attachment method and apparatus
US6193576B1 (en) * 1998-05-19 2001-02-27 International Business Machines Corporation TFT panel alignment and attachment method and apparatus
JP4053136B2 (ja) 1998-06-17 2008-02-27 株式会社半導体エネルギー研究所 反射型半導体表示装置
US6207530B1 (en) 1998-06-19 2001-03-27 International Business Machines Corporation Dual gate FET and process
US6107114A (en) * 1998-11-19 2000-08-22 National Semiconductor Corporation Process flow optimized to protect reflectance of silicon light valve
JP4076648B2 (ja) * 1998-12-18 2008-04-16 株式会社半導体エネルギー研究所 半導体装置
JP4008133B2 (ja) * 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US6362078B1 (en) * 1999-02-26 2002-03-26 Intel Corporation Dynamic threshold voltage device and methods for fabricating dynamic threshold voltage devices
US6677613B1 (en) * 1999-03-03 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP2000258798A (ja) * 1999-03-05 2000-09-22 Sanyo Electric Co Ltd 表示装置
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
AUPQ056099A0 (en) 1999-05-25 1999-06-17 Silverbrook Research Pty Ltd A method and apparatus (pprint01)
JP5210473B2 (ja) * 1999-06-21 2013-06-12 株式会社半導体エネルギー研究所 表示装置
US6876145B1 (en) 1999-09-30 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Organic electroluminescent display device
US6287901B1 (en) * 2000-01-05 2001-09-11 International Business Machines Corporation Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors
US7060153B2 (en) * 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
TW494447B (en) 2000-02-01 2002-07-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW507258B (en) 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
US7715088B2 (en) * 2000-03-03 2010-05-11 Sipix Imaging, Inc. Electrophoretic display
US20070237962A1 (en) * 2000-03-03 2007-10-11 Rong-Chang Liang Semi-finished display panels
JP2001267578A (ja) * 2000-03-17 2001-09-28 Sony Corp 薄膜半導体装置及びその製造方法
US6287891B1 (en) 2000-04-05 2001-09-11 Hrl Laboratories, Llc Method for transferring semiconductor device layers to different substrates
US7579203B2 (en) * 2000-04-25 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7633471B2 (en) 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
US7088322B2 (en) * 2000-05-12 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6982460B1 (en) * 2000-07-07 2006-01-03 International Business Machines Corporation Self-aligned gate MOSFET with separate gates
US6642115B1 (en) * 2000-05-15 2003-11-04 International Business Machines Corporation Double-gate FET with planarized surfaces and self-aligned silicides
JP3906653B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
US20040029310A1 (en) * 2000-08-18 2004-02-12 Adoft Bernds Organic field-effect transistor (ofet), a production method therefor, an integrated circut constructed from the same and their uses
DE10043204A1 (de) 2000-09-01 2002-04-04 Siemens Ag Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung
DE10045192A1 (de) 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
SG143972A1 (en) * 2000-09-14 2008-07-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
DE10061297C2 (de) 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
DE10061299A1 (de) 2000-12-08 2002-06-27 Siemens Ag Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu
DE10105914C1 (de) 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
US6451656B1 (en) 2001-02-28 2002-09-17 Advanced Micro Devices, Inc. CMOS inverter configured from double gate MOSFET and method of fabricating same
US6759282B2 (en) * 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
TW546857B (en) 2001-07-03 2003-08-11 Semiconductor Energy Lab Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP5057619B2 (ja) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
JP4159844B2 (ja) * 2001-10-09 2008-10-01 株式会社半導体エネルギー研究所 発光装置並びに発光素子を用いた表示部を備えた情報端末、携帯電話、デジタルスチルカメラ及びビデオカメラ
JP4164048B2 (ja) * 2001-10-09 2008-10-08 株式会社半導体エネルギー研究所 スイッチ素子、それを用いた表示装置及び半導体装置
JP3583413B2 (ja) * 2001-10-09 2004-11-04 株式会社半導体エネルギー研究所 スイッチ素子、それを用いた表示装置及び半導体装置
TW577179B (en) 2001-10-09 2004-02-21 Semiconductor Energy Lab Switching element, display device, light emitting device using the switching element, and semiconductor device
DE10151036A1 (de) 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
DE10151440C1 (de) 2001-10-18 2003-02-06 Siemens Ag Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung
JP2005507169A (ja) 2001-10-25 2005-03-10 サンディア コーポレーション 交流光起電ビルディングブロック
TW594947B (en) 2001-10-30 2004-06-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4202012B2 (ja) 2001-11-09 2008-12-24 株式会社半導体エネルギー研究所 発光装置及び電流記憶回路
TWI264121B (en) 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
DE10160732A1 (de) 2001-12-11 2003-06-26 Siemens Ag Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu
JP2003197881A (ja) * 2001-12-27 2003-07-11 Seiko Epson Corp 半導体集積回路、半導体集積回路の製造方法、半導体素子部材、電気光学装置、電子機器
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
DE10200399B4 (de) * 2002-01-08 2008-03-27 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Erzeugung einer dreidimensional integrierten Halbleitervorrichtung und dreidimensional integrierte Halbleitervorrichtung
US6744129B2 (en) 2002-01-11 2004-06-01 Microtune (San Diego), Inc. Integrated ground shield
US6706619B2 (en) 2002-03-16 2004-03-16 Memx, Inc. Method for tiling unit cells
US20030173648A1 (en) * 2002-03-16 2003-09-18 Sniegowski Jeffry Joseph Multi-die chip and method for making the same
US6791162B2 (en) 2002-03-16 2004-09-14 Memx, Inc. Unit cell architecture for electrical interconnects
US6919616B2 (en) * 2002-03-16 2005-07-19 Memx, Inc. Chip with passive electrical contacts
US6707077B2 (en) 2002-03-16 2004-03-16 Memx, Inc. Chip interconnect bus
DE10212640B4 (de) 2002-03-21 2004-02-05 Siemens Ag Logische Bauteile aus organischen Feldeffekttransistoren
JP4046267B2 (ja) 2002-03-26 2008-02-13 株式会社半導体エネルギー研究所 表示装置
JP4034122B2 (ja) 2002-05-31 2008-01-16 株式会社半導体エネルギー研究所 発光装置及び素子基板
JP2004071874A (ja) * 2002-08-07 2004-03-04 Sharp Corp 半導体装置製造方法および半導体装置
ES2282722T3 (es) 2002-08-23 2007-10-16 POLYIC GMBH & CO. KG Componente organico para la proteccion frente a sobretensiones y circuito correspondiente.
JP4378672B2 (ja) * 2002-09-03 2009-12-09 セイコーエプソン株式会社 回路基板の製造方法
FR2845522A1 (fr) * 2002-10-03 2004-04-09 St Microelectronics Sa Circuit integre a couche enterree fortement conductrice
JP2004140267A (ja) 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4693411B2 (ja) 2002-10-30 2011-06-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE10253154A1 (de) 2002-11-14 2004-05-27 Siemens Ag Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe
ES2282708T3 (es) 2002-11-19 2007-10-16 POLYIC GMBH & CO. KG Componente electronico organico con capa funcional semiconductora estructurada y metodo para producir el mismo.
JP4554152B2 (ja) * 2002-12-19 2010-09-29 株式会社半導体エネルギー研究所 半導体チップの作製方法
JP4575782B2 (ja) * 2002-12-20 2010-11-04 インターナショナル・ビジネス・マシーンズ・コーポレーション 3次元デバイスの製造方法
JP4101643B2 (ja) * 2002-12-26 2008-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7230316B2 (en) 2002-12-27 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transferred integrated circuit
US20040125093A1 (en) * 2002-12-30 2004-07-01 Serge Rutman Micro-controller with integrated light modulator
JP2004221125A (ja) * 2003-01-09 2004-08-05 Sharp Corp 半導体装置及びその製造方法
DE10302149A1 (de) 2003-01-21 2005-08-25 Siemens Ag Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik
US7436050B2 (en) 2003-01-22 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a flexible printed circuit
JP2004247373A (ja) 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 半導体装置
TWI244211B (en) * 2003-03-14 2005-11-21 Innolux Display Corp Thin film transistor and method of manufacturing the same and display apparatus using the transistor
JP4526771B2 (ja) 2003-03-14 2010-08-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004319651A (ja) * 2003-04-14 2004-11-11 Seiko Epson Corp メモリの素子及びその製造方法
DE10320877A1 (de) * 2003-05-09 2004-12-09 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Halbleiterbauelement und Verfahren zum Herstellen eines Halbleiterbauelements
US20050003592A1 (en) * 2003-06-18 2005-01-06 Jones A. Brooke All-around MOSFET gate and methods of manufacture thereof
US6835262B1 (en) * 2003-06-19 2004-12-28 Northrop Grumman Corporation Positive pressure hot bonder
FR2857150A1 (fr) * 2003-07-01 2005-01-07 St Microelectronics Sa Element integre de memoire dynamique a acces aleatoire, matrice et procede de fabrication de tels elements
DE10339036A1 (de) 2003-08-25 2005-03-31 Siemens Ag Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu
DE10340644B4 (de) 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
US7034362B2 (en) * 2003-10-17 2006-04-25 International Business Machines Corporation Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures
TWI372462B (en) * 2003-10-28 2012-09-11 Semiconductor Energy Lab Method for manufacturing semiconductor device
WO2005057658A1 (en) 2003-12-15 2005-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
JP4759917B2 (ja) * 2003-12-16 2011-08-31 ソニー株式会社 薄膜デバイスの製造方法、薄膜デバイスおよび液晶表示装置
US7271076B2 (en) * 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
US7566010B2 (en) * 2003-12-26 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
US7084496B2 (en) * 2004-01-14 2006-08-01 International Business Machines Corporation Method and apparatus for providing optoelectronic communication with an electronic device
WO2005076358A1 (en) * 2004-02-06 2005-08-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
TWI406688B (zh) * 2004-02-26 2013-09-01 Semiconductor Energy Lab 運動器具,娛樂工具,和訓練工具
US7105391B2 (en) * 2004-03-04 2006-09-12 International Business Machines Corporation Planar pedestal multi gate device
JP2005252072A (ja) * 2004-03-05 2005-09-15 Seiko Epson Corp 素子の実装方法及び搬送装置
JP4238998B2 (ja) * 2004-03-18 2009-03-18 セイコーエプソン株式会社 電気デバイス
US7453150B1 (en) 2004-04-01 2008-11-18 Rensselaer Polytechnic Institute Three-dimensional face-to-face integration assembly
GB0410921D0 (en) * 2004-05-14 2004-06-16 Plastic Logic Ltd Self-aligned active layer island
CN1707795A (zh) * 2004-06-01 2005-12-14 精工爱普生株式会社 存储单元及其制造方法
EP2650907B1 (de) 2004-06-04 2024-10-23 The Board Of Trustees Of The University Of Illinois Verfahren und Einrichtungen zum Herstellen und Zusammenbauen von druckbaren Halbleiterelementen
JP2006108431A (ja) * 2004-10-06 2006-04-20 Sharp Corp 半導体装置
US7935958B2 (en) * 2004-10-22 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP1693894B1 (de) * 2005-02-21 2010-12-01 Gigaset Communications GmbH Aktiv-Matrix-Struktur für eine Anzeigevorrichtung und Verfahren zu deren Herstellung
DE102005009820A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Logik-Schaltelementen
JP5164833B2 (ja) * 2005-06-02 2013-03-21 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 印刷可能な半導体構造の製造方法
CN101305465B (zh) * 2005-11-09 2010-06-09 株式会社半导体能源研究所 半导体器件及其制造方法
US7691730B2 (en) * 2005-11-22 2010-04-06 Corning Incorporated Large area semiconductor on glass insulator
WO2007083570A1 (ja) * 2006-01-16 2007-07-26 Matsushita Electric Industrial Co., Ltd. 半導体小片の製造方法ならびに電界効果トランジスタおよびその製造方法
US7755457B2 (en) 2006-02-07 2010-07-13 Harris Corporation Stacked stripline circuits
JP4797677B2 (ja) * 2006-02-14 2011-10-19 旭硝子株式会社 マルチチップ素子とその製造方法
US8420505B2 (en) * 2006-03-25 2013-04-16 International Rectifier Corporation Process for manufacture of thin wafer
US8174830B2 (en) * 2008-05-06 2012-05-08 Rockwell Collins, Inc. System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling
US8076185B1 (en) 2006-08-23 2011-12-13 Rockwell Collins, Inc. Integrated circuit protection and ruggedization coatings and methods
US7915527B1 (en) 2006-08-23 2011-03-29 Rockwell Collins, Inc. Hermetic seal and hermetic connector reinforcement and repair with low temperature glass coatings
US8617913B2 (en) 2006-08-23 2013-12-31 Rockwell Collins, Inc. Alkali silicate glass based coating and method for applying
US8084855B2 (en) * 2006-08-23 2011-12-27 Rockwell Collins, Inc. Integrated circuit tampering protection and reverse engineering prevention coatings and methods
US8637980B1 (en) 2007-12-18 2014-01-28 Rockwell Collins, Inc. Adhesive applications using alkali silicate glass for electronics
US8166645B2 (en) 2006-08-23 2012-05-01 Rockwell Collins, Inc. Method for providing near-hermetically coated, thermally protected integrated circuit assemblies
US8581108B1 (en) 2006-08-23 2013-11-12 Rockwell Collins, Inc. Method for providing near-hermetically coated integrated circuit assemblies
KR20080101654A (ko) * 2007-05-18 2008-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP2009076879A (ja) * 2007-08-24 2009-04-09 Semiconductor Energy Lab Co Ltd 半導体装置
US8232598B2 (en) * 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US8044464B2 (en) * 2007-09-21 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7982250B2 (en) * 2007-09-21 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8363189B2 (en) 2007-12-18 2013-01-29 Rockwell Collins, Inc. Alkali silicate glass for displays
US20100252885A1 (en) * 2008-01-21 2010-10-07 Sharp Kabushiki Kaisha Semiconductor device and display device
US8278713B2 (en) 2008-03-28 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8221089B2 (en) * 2008-09-12 2012-07-17 Rockwell Collins, Inc. Thin, solid-state mechanism for pumping electrically conductive liquids in a flexible thermal spreader
US8017872B2 (en) * 2008-05-06 2011-09-13 Rockwell Collins, Inc. System and method for proportional cooling with liquid metal
US8650886B2 (en) 2008-09-12 2014-02-18 Rockwell Collins, Inc. Thermal spreader assembly with flexible liquid cooling loop having rigid tubing sections and flexible tubing sections
US8205337B2 (en) 2008-09-12 2012-06-26 Rockwell Collins, Inc. Fabrication process for a flexible, thin thermal spreader
US8616266B2 (en) 2008-09-12 2013-12-31 Rockwell Collins, Inc. Mechanically compliant thermal spreader with an embedded cooling loop for containing and circulating electrically-conductive liquid
DE102008046762B4 (de) 2008-09-11 2020-12-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Projektor
US8119040B2 (en) 2008-09-29 2012-02-21 Rockwell Collins, Inc. Glass thick film embedded passive material
US7824191B1 (en) 2009-08-17 2010-11-02 International Development LLC Connector with conductor piercing prongs for a solar panel
US20110036386A1 (en) * 2009-08-17 2011-02-17 Browder John H Solar panel with inverter
US11646309B2 (en) * 2009-10-12 2023-05-09 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
KR101221871B1 (ko) * 2009-12-07 2013-01-15 한국전자통신연구원 반도체 소자의 제조방법
US9082881B1 (en) 2010-10-04 2015-07-14 American Semiconductor, Inc. Semiconductor on polymer substrate
US8440544B2 (en) * 2010-10-06 2013-05-14 International Business Machines Corporation CMOS structure and method of manufacture
US8637212B2 (en) * 2010-12-22 2014-01-28 Via Technologies, Inc. Reticle set modification to produce multi-core dies
DE102011087887A1 (de) * 2011-12-07 2013-06-13 Osram Gmbh Leuchtdiodenanordnung
US20140015405A1 (en) * 2012-07-12 2014-01-16 Elementech International Co., Ltd. Light emitting diode module
JP5960000B2 (ja) * 2012-09-05 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9435915B1 (en) 2012-09-28 2016-09-06 Rockwell Collins, Inc. Antiglare treatment for glass
US8891280B2 (en) 2012-10-12 2014-11-18 Micron Technology, Inc. Interconnection for memory electrodes
US9025398B2 (en) 2012-10-12 2015-05-05 Micron Technology, Inc. Metallization scheme for integrated circuit
US9190144B2 (en) 2012-10-12 2015-11-17 Micron Technology, Inc. Memory device architecture
WO2014129519A1 (en) 2013-02-20 2014-08-28 Semiconductor Energy Laboratory Co., Ltd. Peeling method, semiconductor device, and peeling apparatus
US9224635B2 (en) 2013-02-26 2015-12-29 Micron Technology, Inc. Connections for memory electrode lines
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
DE102014201095B4 (de) * 2014-01-22 2023-05-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung mit einem mikromechanischen Bauelement
DE102014213375A1 (de) * 2014-04-23 2015-10-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikroelektronisches system mit erhöhter sicherheit vor datenmissbrauch und produktmanipulation und verfahren zur herstellung desselben
US9520437B2 (en) * 2014-08-14 2016-12-13 Cbrite Inc. Flexible APS X-ray imager with MOTFT pixel readout and a pin diode sensing element
US10074693B2 (en) 2015-03-03 2018-09-11 Micron Technology, Inc Connections for memory electrode lines
JP2016195212A (ja) * 2015-04-01 2016-11-17 株式会社東芝 半導体集積回路
CN105633099B (zh) * 2016-01-28 2018-11-30 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示面板
EP3440705A4 (de) 2016-04-01 2019-11-13 INTEL Corporation Transistorzellen mit einer tiefen durchkontaktierung mit auskleidung aus dielektrischem material
CN105914135A (zh) * 2016-05-31 2016-08-31 上海华虹宏力半导体制造有限公司 半导体器件的形成方法
US10146090B2 (en) 2016-08-01 2018-12-04 Microsoft Technology Licensing, Llc Minimizing border of a display device
KR102886320B1 (ko) 2016-08-26 2025-11-14 인텔 코포레이션 집적 회로 디바이스 구조체들 및 양면 제조 기술들
KR102676492B1 (ko) * 2016-11-30 2024-06-18 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 이용한 표시패널
DE112017008080B4 (de) 2017-12-26 2025-12-31 Intel Corporation Gestapelte Transistoren mit zuletzt ausgebildetem Kontakt
US11430814B2 (en) 2018-03-05 2022-08-30 Intel Corporation Metallization structures for stacked device connectivity and their methods of fabrication
US11688780B2 (en) 2019-03-22 2023-06-27 Intel Corporation Deep source and drain for transistor structures with back-side contact metallization
CN112542484B (zh) * 2019-09-20 2024-12-20 北京小米移动软件有限公司 显示面板、显示屏及电子设备
CN112351512B (zh) * 2020-10-30 2023-01-03 上海中航光电子有限公司 一种显示模组及其加热方法
US12200950B2 (en) 2021-03-05 2025-01-14 Semiconductor Energy Laboratory Co., Ltd. Electronic device
KR20240139646A (ko) * 2023-03-14 2024-09-24 삼성디스플레이 주식회사 화소 및 화소의 에이징 방법

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1162565A (en) * 1967-04-07 1969-08-27 Ibm Uk Improvements in and relating to Semiconductor Structures
EP0191505A3 (de) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Verfahren zur Herstellung von Blättern aus kristallinem Material
JPS57106181A (en) * 1980-12-24 1982-07-01 Toshiba Corp Integrated circuit
US4575854A (en) * 1983-10-14 1986-03-11 Mcdonnell Douglas Corporation Uncooled YAG laser
JPS6130059A (ja) * 1984-07-20 1986-02-12 Nec Corp 半導体装置の製造方法
US4870475A (en) * 1985-11-01 1989-09-26 Nec Corporation Semiconductor device and method of manufacturing the same
GB2185622B (en) * 1985-11-27 1989-10-11 Sharp Kk Thin film transistor array
US4774205A (en) * 1986-06-13 1988-09-27 Massachusetts Institute Of Technology Monolithic integration of silicon and gallium arsenide devices
JPS6355529A (ja) * 1986-08-25 1988-03-10 Nec Corp アクティブ・マトリクス液晶表示装置の製造方法
KR900007231B1 (ko) * 1986-09-16 1990-10-05 가부시키가이샤 도시바 반도체집적회로장치
JPS63308386A (ja) * 1987-01-30 1988-12-15 Sony Corp 半導体装置とその製造方法
JPS63276228A (ja) * 1987-05-07 1988-11-14 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6438727A (en) * 1987-08-04 1989-02-09 Nec Corp Transistor array substrate for display
US4769680A (en) * 1987-10-22 1988-09-06 Mrs Technology, Inc. Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems
JP2596949B2 (ja) * 1987-11-06 1997-04-02 シャープ株式会社 液晶表示装置の製造方法
US4863877A (en) * 1987-11-13 1989-09-05 Kopin Corporation Ion implantation and annealing of compound semiconductor layers
EP0316799B1 (de) * 1987-11-13 1994-07-27 Nissan Motor Co., Ltd. Halbleitervorrichtung
JPH01257355A (ja) * 1987-12-14 1989-10-13 Mitsubishi Electric Corp マイクロ波モノリシックic
US4855255A (en) * 1988-03-23 1989-08-08 Massachusetts Institute Of Technology Tapered laser or waveguide optoelectronic method
US4883561A (en) * 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
US4846931A (en) * 1988-03-29 1989-07-11 Bell Communications Research, Inc. Method for lifting-off epitaxial films
JPH023238A (ja) * 1988-06-20 1990-01-08 Nissan Motor Co Ltd 薄膜バイポーラトランジスタの製造方法
JPH02127053A (ja) * 1988-11-07 1990-05-15 Mitsubishi Electric Corp Ledアレイ
US5216237A (en) * 1989-02-03 1993-06-01 British Telecommunications, Plc Optical detector with integral filter and having fabry perot resonator system
JPH0344067A (ja) * 1989-07-11 1991-02-25 Nec Corp 半導体基板の積層方法
JPH04502233A (ja) * 1989-08-11 1992-04-16 サンタ・バーバラ・リサーチ・センター 検出器アレイの2進光学マイクロレンズの製造方法
US4979002A (en) * 1989-09-08 1990-12-18 University Of Colorado Foundation, Inc. Optical photodiode switch array with zener diode
JPH0770757B2 (ja) * 1989-10-17 1995-07-31 株式会社東芝 半導体発光素子
DE69426347T2 (de) * 1993-09-29 2001-05-17 Matsushita Electric Industrial Co., Ltd. Verfahren zum Montieren einer Halbleiteranordnung auf einer Schaltungsplatte und eine Schaltungsplatte mit einer Halbleiteranordnung darauf
US5841197A (en) * 1994-11-18 1998-11-24 Adamic, Jr.; Fred W. Inverted dielectric isolation process
US5998232A (en) * 1998-01-16 1999-12-07 Implant Sciences Corporation Planar technology for producing light-emitting devices

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WO1993016491A1 (en) 1993-08-19
US5376561A (en) 1994-12-27
JPH07504782A (ja) 1995-05-25
CA2129123A1 (en) 1993-08-19
EP0626099A1 (de) 1994-11-30
US5702963A (en) 1997-12-30
EP0626099B1 (de) 2002-11-13
US6424020B1 (en) 2002-07-23
EP1237191A2 (de) 2002-09-04
DE69332482T2 (de) 2003-10-02

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