ATE241215T1 - Verfahren zur herstellung einer mehrschicht- solarzelle - Google Patents
Verfahren zur herstellung einer mehrschicht- solarzelleInfo
- Publication number
- ATE241215T1 ATE241215T1 AT95939178T AT95939178T ATE241215T1 AT E241215 T1 ATE241215 T1 AT E241215T1 AT 95939178 T AT95939178 T AT 95939178T AT 95939178 T AT95939178 T AT 95939178T AT E241215 T1 ATE241215 T1 AT E241215T1
- Authority
- AT
- Austria
- Prior art keywords
- deposited
- pct
- layers
- layer
- date
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010899 nucleation Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000007790 solid phase Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000011282 treatment Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
- H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
- H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPM9822A AUPM982294A0 (en) | 1994-12-02 | 1994-12-02 | Method of manufacturing a multilayer solar cell |
| PCT/AU1995/000812 WO1996017388A1 (en) | 1994-12-02 | 1995-12-01 | Method of manufacturing a multilayer solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE241215T1 true ATE241215T1 (de) | 2003-06-15 |
Family
ID=3784332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT95939178T ATE241215T1 (de) | 1994-12-02 | 1995-12-01 | Verfahren zur herstellung einer mehrschicht- solarzelle |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US5942050A (de) |
| EP (1) | EP0795202B1 (de) |
| JP (1) | JP3822238B2 (de) |
| KR (2) | KR100392924B1 (de) |
| CN (1) | CN1095205C (de) |
| AT (1) | ATE241215T1 (de) |
| AU (2) | AUPM982294A0 (de) |
| BR (1) | BR9509944A (de) |
| CA (1) | CA2205882C (de) |
| DE (1) | DE69530859T2 (de) |
| ES (1) | ES2200011T3 (de) |
| MX (1) | MX9704064A (de) |
| MY (2) | MY116383A (de) |
| NZ (1) | NZ296486A (de) |
| WO (1) | WO1996017388A1 (de) |
Families Citing this family (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1174536A (ja) * | 1997-01-09 | 1999-03-16 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| US6159824A (en) | 1997-05-12 | 2000-12-12 | Silicon Genesis Corporation | Silicon-on-silicon wafer bonding process using a thin film blister-separation method |
| US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
| JP3557148B2 (ja) * | 2000-02-21 | 2004-08-25 | 三洋電機株式会社 | 太陽電池モジュール |
| US6879014B2 (en) * | 2000-03-20 | 2005-04-12 | Aegis Semiconductor, Inc. | Semitransparent optical detector including a polycrystalline layer and method of making |
| AU2001247680A1 (en) * | 2000-03-27 | 2001-10-08 | Aegis Semiconductor | A semitransparent optical detector including a polycrystalline layer and method of making |
| US6670599B2 (en) | 2000-03-27 | 2003-12-30 | Aegis Semiconductor, Inc. | Semitransparent optical detector on a flexible substrate and method of making |
| US6875674B2 (en) * | 2000-07-10 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device with fluorine concentration |
| US6734453B2 (en) | 2000-08-08 | 2004-05-11 | Translucent Photonics, Inc. | Devices with optical gain in silicon |
| EP1415191A1 (de) * | 2001-08-02 | 2004-05-06 | Aegis Semiconductor | Abstimmbares optisches instrument |
| US20050030628A1 (en) * | 2003-06-20 | 2005-02-10 | Aegis Semiconductor | Very low cost narrow band infrared sensor |
| US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
| US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
| WO2005022900A2 (en) * | 2003-08-26 | 2005-03-10 | Redshift Systems Corporation | Infrared camera system |
| US7221827B2 (en) * | 2003-09-08 | 2007-05-22 | Aegis Semiconductor, Inc. | Tunable dispersion compensator |
| US7304799B2 (en) * | 2003-10-07 | 2007-12-04 | Aegis Lightwave, Inc. | Tunable optical filter with heater on a CTE-matched transparent substrate |
| US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
| US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
| DE102004044709A1 (de) * | 2004-09-15 | 2006-03-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur gleichzeitigen Rekristalisierung und Dotierung von Halbleiterschichten und nach diesem Verfahren hergestellte Halbleiterschichtsysteme |
| DE102005061820B4 (de) * | 2005-12-23 | 2014-09-04 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer Solarzelle |
| US20080057220A1 (en) * | 2006-01-31 | 2008-03-06 | Robert Bachrach | Silicon photovoltaic cell junction formed from thin film doping source |
| US7655542B2 (en) * | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
| US7910947B2 (en) * | 2006-07-04 | 2011-03-22 | Kyosemi Corporation | Panel-shaped semiconductor module |
| JP4948536B2 (ja) * | 2006-07-07 | 2012-06-06 | 京セミ株式会社 | パネル形半導体モジュール |
| US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
| US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
| US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
| US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
| CA2568136C (en) * | 2006-11-30 | 2008-07-29 | Tenxc Wireless Inc. | Butler matrix implementation |
| US20080216887A1 (en) * | 2006-12-22 | 2008-09-11 | Advent Solar, Inc. | Interconnect Technologies for Back Contact Solar Cells and Modules |
| US20080223440A1 (en) * | 2007-01-18 | 2008-09-18 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
| US20080173350A1 (en) * | 2007-01-18 | 2008-07-24 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US7582515B2 (en) * | 2007-01-18 | 2009-09-01 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US20080245414A1 (en) * | 2007-04-09 | 2008-10-09 | Shuran Sheng | Methods for forming a photovoltaic device with low contact resistance |
| US7875486B2 (en) * | 2007-07-10 | 2011-01-25 | Applied Materials, Inc. | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning |
| EP2176444A1 (de) * | 2007-07-17 | 2010-04-21 | Applied Materials, Inc. | Reinigungsratenverbesserung durch druckgesteuerte entfernte plasmaquelle |
| PL2031082T3 (pl) | 2007-08-31 | 2015-03-31 | Aperam Alloys Imphy | Metalowe podłoże o teksturze krystalograficznej, układ o teksturze krystalograficznej, ogniowo fotowoltaiczne i moduł fotowoltaiczny zawierające taki układ i sposób powlekania cienkimi warstwami |
| US20090101201A1 (en) * | 2007-10-22 | 2009-04-23 | White John M | Nip-nip thin-film photovoltaic structure |
| US20090104733A1 (en) * | 2007-10-22 | 2009-04-23 | Yong Kee Chae | Microcrystalline silicon deposition for thin film solar applications |
| US20090107549A1 (en) * | 2007-10-24 | 2009-04-30 | Peter Borden | Percolating amorphous silicon solar cell |
| JP2011501407A (ja) * | 2007-10-29 | 2011-01-06 | ティージー ソーラー コーポレイション | 太陽電池の製造方法 |
| WO2009059238A1 (en) * | 2007-11-02 | 2009-05-07 | Applied Materials, Inc. | Plasma treatment between deposition processes |
| WO2009064870A2 (en) * | 2007-11-13 | 2009-05-22 | Advent Solar, Inc. | Selective emitter and texture processes for back contact solar cells |
| US7833885B2 (en) | 2008-02-11 | 2010-11-16 | Applied Materials, Inc. | Microcrystalline silicon thin film transistor |
| US8076222B2 (en) * | 2008-02-11 | 2011-12-13 | Applied Materials, Inc. | Microcrystalline silicon thin film transistor |
| KR20110008284A (ko) * | 2008-04-29 | 2011-01-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 모놀리식 모듈 어셈블리 기술들을 이용하여 제조된 광전지 모듈들 |
| CN101609796B (zh) * | 2008-06-20 | 2012-03-21 | 福建钧石能源有限公司 | 薄膜形成方法和薄膜太阳能电池的制造方法 |
| US7981778B2 (en) | 2009-07-22 | 2011-07-19 | Applied Materials, Inc. | Directional solid phase crystallization of thin amorphous silicon for solar cell applications |
| US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
| US8895842B2 (en) * | 2008-08-29 | 2014-11-25 | Applied Materials, Inc. | High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells |
| US20100059110A1 (en) * | 2008-09-11 | 2010-03-11 | Applied Materials, Inc. | Microcrystalline silicon alloys for thin film and wafer based solar applications |
| TW201027783A (en) | 2008-09-19 | 2010-07-16 | Applied Materials Inc | Methods of making an emitter having a desired dopant profile |
| EP2219231A1 (de) * | 2009-02-12 | 2010-08-18 | Excico France | Verfahren und Vorrichtung zum Bestrahlen einer photovoltaischen Materialoberfläche mit Laserenergie |
| US7858427B2 (en) * | 2009-03-03 | 2010-12-28 | Applied Materials, Inc. | Crystalline silicon solar cells on low purity substrate |
| DE112010001895T5 (de) * | 2009-04-06 | 2012-06-21 | Applied Materials, Inc. | Hochwertige Kontaktstruktur einer TCO-Silizium-Schnittstelle für hocheffiziente Dünnschicht-Silizium-Solarzellen |
| US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
| WO2010140539A1 (en) | 2009-06-05 | 2010-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| US20110114177A1 (en) * | 2009-07-23 | 2011-05-19 | Applied Materials, Inc. | Mixed silicon phase film for high efficiency thin film silicon solar cells |
| KR101065749B1 (ko) * | 2009-07-31 | 2011-09-19 | 주식회사 티지솔라 | 태양전지 및 그 제조방법 |
| KR101079028B1 (ko) | 2009-10-14 | 2011-11-02 | 한국철강 주식회사 | 광기전력 장치 및 광기전력 장치의 제조 방법 |
| WO2011046664A2 (en) * | 2009-10-15 | 2011-04-21 | Applied Materials, Inc. | A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells |
| US20110126875A1 (en) * | 2009-12-01 | 2011-06-02 | Hien-Minh Huu Le | Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition |
| US20110232753A1 (en) * | 2010-03-23 | 2011-09-29 | Applied Materials, Inc. | Methods of forming a thin-film solar energy device |
| KR20110122523A (ko) * | 2010-05-04 | 2011-11-10 | 삼성전자주식회사 | 반도체 메모리 소자 및 그의 형성방법 |
| CN103608925B (zh) | 2011-07-13 | 2017-06-13 | 应用材料公司 | 制造薄膜晶体管器件的方法 |
| CN102280502B (zh) * | 2011-08-26 | 2013-04-17 | 上海师范大学 | 一种梯度掺杂硅基异质结太阳能电池及其制备方法 |
| KR20180118803A (ko) | 2011-10-07 | 2018-10-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들 |
| FR3013506A1 (fr) * | 2013-11-15 | 2015-05-22 | St Microelectronics Crolles 2 | Formation d'une couche de silicium fortement dopee sur un substrat de silicium plus faiblement dope |
| KR102629466B1 (ko) * | 2016-09-21 | 2024-01-26 | 에스케이하이닉스 주식회사 | 반도체 장치의 제조 방법 |
| KR102692564B1 (ko) * | 2018-09-21 | 2024-08-06 | 삼성전자주식회사 | 다층 박막 구조물 및 이를 이용한 위상 변환 소자 |
| CN113228282B (zh) * | 2021-03-29 | 2023-12-05 | 长江存储科技有限责任公司 | 用于增大半导体器件中的多晶硅晶粒尺寸的阶梯式退火工艺 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4152535A (en) * | 1976-07-06 | 1979-05-01 | The Boeing Company | Continuous process for fabricating solar cells and the product produced thereby |
| US4278830A (en) * | 1977-09-29 | 1981-07-14 | Nasa | Schottky barrier solar cell |
| GB2030766A (en) * | 1978-09-02 | 1980-04-10 | Plessey Co Ltd | Laser treatment of semiconductor material |
| DE3123628A1 (de) * | 1981-06-15 | 1983-01-05 | Siemens AG, 1000 Berlin und 8000 München | Einrichtung zur umkristallisation duenner oberflaechenschichten oder duenner, auf substraten aufgebrachter schichten mittels eines elektronenmissionssystems |
| JPS5890724A (ja) * | 1981-11-25 | 1983-05-30 | Mitsubishi Electric Corp | 積層半導体装置の製造方法 |
| US4539431A (en) * | 1983-06-06 | 1985-09-03 | Sera Solar Corporation | Pulse anneal method for solar cell |
| US4769682A (en) * | 1984-11-05 | 1988-09-06 | Energy Conversion Devices, Inc. | Boron doped semiconductor materials and method for producing same |
| US4638110A (en) * | 1985-06-13 | 1987-01-20 | Illuminated Data, Inc. | Methods and apparatus relating to photovoltaic semiconductor devices |
| JPS6419711A (en) * | 1987-07-15 | 1989-01-23 | Toshiba Corp | Manufacture of semiconductor single-crystal layer |
| DE58905580D1 (de) * | 1988-03-24 | 1993-10-21 | Siemens Ag | Verfahren zum Herstellen von polykristallinen Schichten mit grobkristallinem Aufbau für Dünnschichthalbleiterbauelemente wie Solarzellen. |
| US5242507A (en) * | 1989-04-05 | 1993-09-07 | Boston University | Impurity-induced seeding of polycrystalline semiconductors |
| US5318919A (en) * | 1990-07-31 | 1994-06-07 | Sanyo Electric Co., Ltd. | Manufacturing method of thin film transistor |
| JPH04212473A (ja) * | 1990-10-22 | 1992-08-04 | Sanyo Electric Co Ltd | 多結晶半導体膜及びその膜を用いた光起電力装置 |
| US5221365A (en) * | 1990-10-22 | 1993-06-22 | Sanyo Electric Co., Ltd. | Photovoltaic cell and method of manufacturing polycrystalline semiconductive film |
| US5298455A (en) * | 1991-01-30 | 1994-03-29 | Tdk Corporation | Method for producing a non-single crystal semiconductor device |
| JPH06204137A (ja) * | 1992-10-19 | 1994-07-22 | Samsung Electron Co Ltd | 多結晶シリコン薄膜の製造方法 |
-
1994
- 1994-12-02 AU AUPM9822A patent/AUPM982294A0/en not_active Abandoned
-
1995
- 1995-12-01 BR BR9509944A patent/BR9509944A/pt not_active IP Right Cessation
- 1995-12-01 ES ES95939178T patent/ES2200011T3/es not_active Expired - Lifetime
- 1995-12-01 AT AT95939178T patent/ATE241215T1/de not_active IP Right Cessation
- 1995-12-01 KR KR1019970703686A patent/KR100392924B1/ko not_active Expired - Fee Related
- 1995-12-01 US US08/849,584 patent/US5942050A/en not_active Expired - Lifetime
- 1995-12-01 JP JP51793696A patent/JP3822238B2/ja not_active Expired - Fee Related
- 1995-12-01 KR KR1019970703686A patent/KR980700693A/ko active Granted
- 1995-12-01 MY MYPI95003708A patent/MY116383A/en unknown
- 1995-12-01 MX MX9704064A patent/MX9704064A/es not_active IP Right Cessation
- 1995-12-01 AU AU41113/96A patent/AU689992B2/en not_active Ceased
- 1995-12-01 EP EP95939178A patent/EP0795202B1/de not_active Expired - Lifetime
- 1995-12-01 CN CN95197426A patent/CN1095205C/zh not_active Expired - Fee Related
- 1995-12-01 WO PCT/AU1995/000812 patent/WO1996017388A1/en not_active Ceased
- 1995-12-01 CA CA002205882A patent/CA2205882C/en not_active Expired - Fee Related
- 1995-12-01 NZ NZ296486A patent/NZ296486A/en unknown
- 1995-12-01 DE DE69530859T patent/DE69530859T2/de not_active Expired - Lifetime
- 1995-12-01 MY MYPI95003709A patent/MY113772A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU689992B2 (en) | 1998-04-09 |
| CN1095205C (zh) | 2002-11-27 |
| JP3822238B2 (ja) | 2006-09-13 |
| AUPM982294A0 (en) | 1995-01-05 |
| JPH10509843A (ja) | 1998-09-22 |
| DE69530859D1 (de) | 2003-06-26 |
| KR100392924B1 (ko) | 2004-01-24 |
| DE69530859T2 (de) | 2004-02-26 |
| ES2200011T3 (es) | 2004-03-01 |
| NZ296486A (en) | 1997-09-22 |
| CN1173241A (zh) | 1998-02-11 |
| CA2205882C (en) | 2006-02-14 |
| MY113772A (en) | 2002-05-31 |
| MY116383A (en) | 2004-01-31 |
| CA2205882A1 (en) | 1996-06-06 |
| EP0795202A4 (de) | 1998-06-24 |
| EP0795202A1 (de) | 1997-09-17 |
| US5942050A (en) | 1999-08-24 |
| AU4111396A (en) | 1996-06-19 |
| WO1996017388A1 (en) | 1996-06-06 |
| EP0795202B1 (de) | 2003-05-21 |
| MX9704064A (es) | 1997-08-30 |
| KR980700693A (ko) | 1998-03-30 |
| BR9509944A (pt) | 1998-01-27 |
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