ATE251361T1 - Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellung - Google Patents
Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellungInfo
- Publication number
- ATE251361T1 ATE251361T1 AT93914286T AT93914286T ATE251361T1 AT E251361 T1 ATE251361 T1 AT E251361T1 AT 93914286 T AT93914286 T AT 93914286T AT 93914286 T AT93914286 T AT 93914286T AT E251361 T1 ATE251361 T1 AT E251361T1
- Authority
- AT
- Austria
- Prior art keywords
- production
- electronic circuit
- nano scale
- devices
- nano
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
- H10D8/755—Resonant tunneling diodes [RTD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US89160592A | 1992-06-01 | 1992-06-01 | |
| US07/893,092 US5475341A (en) | 1992-06-01 | 1992-06-01 | Sub-nanoscale electronic systems and devices |
| PCT/US1993/005185 WO1993025003A1 (en) | 1992-06-01 | 1993-06-01 | Sub-nanoscale electronic systems, devices and processes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE251361T1 true ATE251361T1 (de) | 2003-10-15 |
Family
ID=27128986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT93914286T ATE251361T1 (de) | 1992-06-01 | 1993-06-01 | Elektronischer schaltkreis im nanobereich und verfahren zu dessen herstellung |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0643883B1 (de) |
| JP (1) | JP3637056B2 (de) |
| AT (1) | ATE251361T1 (de) |
| AU (1) | AU4400093A (de) |
| CA (1) | CA2134755A1 (de) |
| DE (1) | DE69333226T2 (de) |
| WO (1) | WO1993025003A1 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3149718B2 (ja) | 1995-02-03 | 2001-03-26 | 松下電器産業株式会社 | 単電子トランジスタ |
| IL121312A (en) * | 1997-07-14 | 2001-09-13 | Technion Res & Dev Foundation | Microelectronic components, their manufacture and electronic networks containing them |
| GB9808061D0 (en) * | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
| IL126776A (en) | 1998-10-27 | 2001-04-30 | Technion Res & Dev Foundation | A method of investing gold |
| US6348700B1 (en) | 1998-10-27 | 2002-02-19 | The Mitre Corporation | Monomolecular rectifying wire and logic based thereupon |
| US7364920B2 (en) | 1999-10-27 | 2008-04-29 | Technion Research And Development Foundation Ltd. | Method for gold deposition |
| DE10296423T8 (de) * | 2001-03-02 | 2004-07-08 | William Marsh Rice University, Houston | Mittles elektrischem Potential unterstützter Aufbau von molekularen Vorrichtungen |
| DE20121631U1 (de) * | 2001-11-09 | 2003-06-18 | Friz Biochem GmbH, 82152 Planegg | Molekulares elektronisches Bauelement zum Aufbau nanoelektronischer Schaltungen, molekulare elektronische Baugruppe und elektronische Schaltung |
| JP4691648B2 (ja) * | 2002-03-08 | 2011-06-01 | 独立行政法人情報通信研究機構 | 導電性ナノワイヤーの製造装置および製造方法 |
| US6670631B2 (en) * | 2002-05-20 | 2003-12-30 | Hewlett-Packard Development Company, L.P. | Low-forward-voltage molecular rectifier |
| DE10330825A1 (de) | 2003-07-08 | 2005-06-23 | Infineon Technologies Ag | Integrierter Schaltkreis |
| JP4497511B2 (ja) * | 2003-07-17 | 2010-07-07 | 独立行政法人科学技術振興機構 | 有機半導体ドット作製材料、有機半導体ドット構造体および有機半導体ドットの作製方法 |
| DE10340610B4 (de) * | 2003-08-29 | 2007-06-06 | Infineon Technologies Ag | Verbindung mit mindestens einer Speichereinheit aus organischem Speichermaterial, insbesondere zur Verwendung in CMOS-Strukturen, Halbleiterbauelement und ein Verfahren zur Herstellung eines Halbleiterbauelementes |
| CN111884644B (zh) * | 2020-06-28 | 2024-04-19 | 深圳清华大学研究院 | 一种基于结构超滑的并联rf mems开关 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0075454B1 (de) * | 1981-09-18 | 1987-11-25 | Fujitsu Limited | Halbleiteranordnung mit leitender Verbindungsstruktur und Verfahren zum Herstellen derselben |
| US4427840A (en) * | 1981-12-30 | 1984-01-24 | The United States Of America As Represented By The United States Department Of Energy | Plastic Schottky barrier solar cells |
| US4804930A (en) * | 1983-09-26 | 1989-02-14 | H.S.G. Venture | Molecular electro-optical transistor and switch |
| US5107308A (en) * | 1986-07-04 | 1992-04-21 | Mitsubishi Denki Kabushiki Kaisha | Field-effect transistor |
| JPS6444061A (en) * | 1987-08-12 | 1989-02-16 | Seiko Epson Corp | Method of fixing molecular chain |
| JPS6444062A (en) * | 1987-08-12 | 1989-02-16 | Seiko Epson Corp | Disposing and wiring method for molecular chain |
| JPH0318068A (ja) * | 1989-06-15 | 1991-01-25 | Bridgestone Corp | 光電変換素子 |
-
1993
- 1993-06-01 AT AT93914286T patent/ATE251361T1/de not_active IP Right Cessation
- 1993-06-01 AU AU44000/93A patent/AU4400093A/en not_active Abandoned
- 1993-06-01 CA CA002134755A patent/CA2134755A1/en not_active Abandoned
- 1993-06-01 WO PCT/US1993/005185 patent/WO1993025003A1/en not_active Ceased
- 1993-06-01 EP EP93914286A patent/EP0643883B1/de not_active Expired - Lifetime
- 1993-06-01 JP JP50082894A patent/JP3637056B2/ja not_active Expired - Fee Related
- 1993-06-01 DE DE69333226T patent/DE69333226T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0643883A1 (de) | 1995-03-22 |
| JPH08501411A (ja) | 1996-02-13 |
| EP0643883B1 (de) | 2003-10-01 |
| DE69333226T2 (de) | 2004-07-22 |
| DE69333226D1 (de) | 2003-11-06 |
| AU4400093A (en) | 1993-12-30 |
| CA2134755A1 (en) | 1993-12-09 |
| EP0643883A4 (de) | 1997-08-20 |
| WO1993025003A1 (en) | 1993-12-09 |
| JP3637056B2 (ja) | 2005-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |