ATE255268T1 - Temperaturkompensierter vorspannungsgenerator - Google Patents

Temperaturkompensierter vorspannungsgenerator

Info

Publication number
ATE255268T1
ATE255268T1 AT01908959T AT01908959T ATE255268T1 AT E255268 T1 ATE255268 T1 AT E255268T1 AT 01908959 T AT01908959 T AT 01908959T AT 01908959 T AT01908959 T AT 01908959T AT E255268 T1 ATE255268 T1 AT E255268T1
Authority
AT
Austria
Prior art keywords
bias generator
temperature
compensated bias
temperature compensated
memory device
Prior art date
Application number
AT01908959T
Other languages
English (en)
Inventor
Buskirk Michael A Van
Bhimachar Venkatesh
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE255268T1 publication Critical patent/ATE255268T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Control Of Eletrric Generators (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Control Of Electrical Variables (AREA)
AT01908959T 2000-02-29 2001-02-07 Temperaturkompensierter vorspannungsgenerator ATE255268T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18617200P 2000-02-29 2000-02-29
US09/610,764 US6205074B1 (en) 2000-02-29 2000-07-06 Temperature-compensated bias generator
PCT/US2001/004044 WO2001065561A1 (en) 2000-02-29 2001-02-07 Temperature-compensated bias generator

Publications (1)

Publication Number Publication Date
ATE255268T1 true ATE255268T1 (de) 2003-12-15

Family

ID=26881843

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01908959T ATE255268T1 (de) 2000-02-29 2001-02-07 Temperaturkompensierter vorspannungsgenerator

Country Status (9)

Country Link
US (1) US6205074B1 (de)
EP (1) EP1264312B1 (de)
JP (1) JP2003530656A (de)
KR (1) KR100743695B1 (de)
CN (1) CN100524504C (de)
AT (1) ATE255268T1 (de)
DE (1) DE60101319T2 (de)
TW (1) TW501137B (de)
WO (1) WO2001065561A1 (de)

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US6560152B1 (en) * 2001-11-02 2003-05-06 Sandisk Corporation Non-volatile memory with temperature-compensated data read
US6781907B2 (en) * 2002-06-06 2004-08-24 Micron Technology, Inc. Temperature compensated T-RAM memory device and method
US6954394B2 (en) * 2002-11-27 2005-10-11 Matrix Semiconductor, Inc. Integrated circuit and method for selecting a set of memory-cell-layer-dependent or temperature-dependent operating conditions
DE10335618B4 (de) * 2003-08-04 2005-12-08 Infineon Technologies Ag Halbleiterspeicher und Verfahren zum Betreiben eines Halbleiterspeichers
US7057958B2 (en) * 2003-09-30 2006-06-06 Sandisk Corporation Method and system for temperature compensation for memory cells with temperature-dependent behavior
US7009904B2 (en) * 2003-11-19 2006-03-07 Infineon Technologies Ag Back-bias voltage generator with temperature control
US7266031B2 (en) * 2003-11-19 2007-09-04 Infineon Technologies Ag Internal voltage generator with temperature control
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US7218570B2 (en) * 2004-12-17 2007-05-15 Sandisk 3D Llc Apparatus and method for memory operations using address-dependent conditions
US7283414B1 (en) 2006-05-24 2007-10-16 Sandisk 3D Llc Method for improving the precision of a temperature-sensor circuit
US7342831B2 (en) * 2006-06-16 2008-03-11 Sandisk Corporation System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7391650B2 (en) * 2006-06-16 2008-06-24 Sandisk Corporation Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
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US7447093B2 (en) * 2006-12-29 2008-11-04 Sandisk Corporation Method for controlling voltage in non-volatile memory systems
US7403434B1 (en) * 2006-12-29 2008-07-22 Sandisk Corporation System for controlling voltage in non-volatile memory systems
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US7768856B2 (en) * 2007-10-30 2010-08-03 Spansion Llc Control of temperature slope for band gap reference voltage in a memory device
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US7755946B2 (en) * 2008-09-19 2010-07-13 Sandisk Corporation Data state-based temperature compensation during sensing in non-volatile memory
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US8576651B2 (en) * 2012-01-20 2013-11-05 Sandisk 3D Llc Temperature compensation of conductive bridge memory arrays
US8902669B2 (en) 2012-11-08 2014-12-02 SanDisk Technologies, Inc. Flash memory with data retention bias
KR102083496B1 (ko) * 2012-11-21 2020-03-02 삼성전자 주식회사 리드 동작 시 온도 보상된 워드 라인 전압을 인가하는 반도체 메모리 장치 및 그 방법
US9171856B2 (en) 2013-10-01 2015-10-27 Ememory Technology Inc. Bias generator for flash memory and control method thereof
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
WO2015073921A1 (en) 2013-11-14 2015-05-21 Eagle Harbor Technologies, Inc. This disclosure relates generally to a high voltage nanosecond pulser.
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
JP6379733B2 (ja) * 2014-06-27 2018-08-29 富士通セミコンダクター株式会社 不揮発性半導体記憶装置及びその制御方法
US9653156B2 (en) * 2015-02-20 2017-05-16 Kabushiki Kaisha Toshiba Memory controller, nonvolatile semiconductor memory device and memory system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11227745B2 (en) 2018-08-10 2022-01-18 Eagle Harbor Technologies, Inc. Plasma sheath control for RF plasma reactors
WO2018148182A1 (en) 2017-02-07 2018-08-16 Eagle Harbor Technologies, Inc. Transformer resonant converter
CN107170484B (zh) * 2017-03-17 2020-01-24 北京兆易创新科技股份有限公司 一种NAND Flash电压自动补偿方法和装置
JP6902167B2 (ja) 2017-08-25 2021-07-14 イーグル ハーバー テクノロジーズ, インク.Eagle Harbor Technologies, Inc. ナノ秒パルスを使用する任意波形の発生
KR102375913B1 (ko) 2017-10-18 2022-03-18 삼성전자주식회사 플래시 메모리 장치 및 이의 프로그램 방법
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
CN110782937B (zh) * 2018-07-31 2024-07-30 三星电子株式会社 非易失性存储装置及其编程方法
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
TWI783203B (zh) 2019-01-08 2022-11-11 美商鷹港科技股份有限公司 奈秒脈波產生器電路
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
EP4486072A3 (de) 2019-12-24 2025-04-09 Eagle Harbor Technologies, Inc. Nanosekundenimpuls-hf-isolierung für plasmasysteme
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
JP7833099B2 (ja) 2022-09-29 2026-03-18 イーグル ハーバー テクノロジーズ，インク． 高電圧プラズマ制御
US11955193B1 (en) * 2023-12-05 2024-04-09 Aspinity, Inc. Compute-in-memory array multi-range temperature compensation

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Also Published As

Publication number Publication date
US6205074B1 (en) 2001-03-20
JP2003530656A (ja) 2003-10-14
EP1264312A1 (de) 2002-12-11
KR100743695B1 (ko) 2007-07-30
DE60101319D1 (de) 2004-01-08
CN1406382A (zh) 2003-03-26
KR20020083165A (ko) 2002-11-01
TW501137B (en) 2002-09-01
DE60101319T2 (de) 2004-09-16
CN100524504C (zh) 2009-08-05
WO2001065561A1 (en) 2001-09-07
EP1264312B1 (de) 2003-11-26

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