ATE255268T1 - Temperaturkompensierter vorspannungsgenerator - Google Patents

Temperaturkompensierter vorspannungsgenerator

Info

Publication number
ATE255268T1
ATE255268T1 AT01908959T AT01908959T ATE255268T1 AT E255268 T1 ATE255268 T1 AT E255268T1 AT 01908959 T AT01908959 T AT 01908959T AT 01908959 T AT01908959 T AT 01908959T AT E255268 T1 ATE255268 T1 AT E255268T1
Authority
AT
Austria
Prior art keywords
bias generator
temperature
compensated bias
temperature compensated
memory device
Prior art date
Application number
AT01908959T
Other languages
English (en)
Inventor
Buskirk Michael A Van
Bhimachar Venkatesh
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE255268T1 publication Critical patent/ATE255268T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Control Of Eletrric Generators (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Control Of Electrical Variables (AREA)
AT01908959T 2000-02-29 2001-02-07 Temperaturkompensierter vorspannungsgenerator ATE255268T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18617200P 2000-02-29 2000-02-29
US09/610,764 US6205074B1 (en) 2000-02-29 2000-07-06 Temperature-compensated bias generator
PCT/US2001/004044 WO2001065561A1 (en) 2000-02-29 2001-02-07 Temperature-compensated bias generator

Publications (1)

Publication Number Publication Date
ATE255268T1 true ATE255268T1 (de) 2003-12-15

Family

ID=26881843

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01908959T ATE255268T1 (de) 2000-02-29 2001-02-07 Temperaturkompensierter vorspannungsgenerator

Country Status (9)

Country Link
US (1) US6205074B1 (de)
EP (1) EP1264312B1 (de)
JP (1) JP2003530656A (de)
KR (1) KR100743695B1 (de)
CN (1) CN100524504C (de)
AT (1) ATE255268T1 (de)
DE (1) DE60101319T2 (de)
TW (1) TW501137B (de)
WO (1) WO2001065561A1 (de)

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US6781907B2 (en) * 2002-06-06 2004-08-24 Micron Technology, Inc. Temperature compensated T-RAM memory device and method
US6954394B2 (en) * 2002-11-27 2005-10-11 Matrix Semiconductor, Inc. Integrated circuit and method for selecting a set of memory-cell-layer-dependent or temperature-dependent operating conditions
DE10335618B4 (de) * 2003-08-04 2005-12-08 Infineon Technologies Ag Halbleiterspeicher und Verfahren zum Betreiben eines Halbleiterspeichers
US7057958B2 (en) * 2003-09-30 2006-06-06 Sandisk Corporation Method and system for temperature compensation for memory cells with temperature-dependent behavior
US7009904B2 (en) * 2003-11-19 2006-03-07 Infineon Technologies Ag Back-bias voltage generator with temperature control
US7266031B2 (en) * 2003-11-19 2007-09-04 Infineon Technologies Ag Internal voltage generator with temperature control
US8250295B2 (en) * 2004-01-05 2012-08-21 Smart Modular Technologies, Inc. Multi-rank memory module that emulates a memory module having a different number of ranks
JP2005285197A (ja) 2004-03-29 2005-10-13 Renesas Technology Corp 半導体記憶装置
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US7218570B2 (en) * 2004-12-17 2007-05-15 Sandisk 3D Llc Apparatus and method for memory operations using address-dependent conditions
US7283414B1 (en) 2006-05-24 2007-10-16 Sandisk 3D Llc Method for improving the precision of a temperature-sensor circuit
US7391650B2 (en) * 2006-06-16 2008-06-24 Sandisk Corporation Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7342831B2 (en) * 2006-06-16 2008-03-11 Sandisk Corporation System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7436724B2 (en) * 2006-08-04 2008-10-14 Sandisk Corporation Method and system for independent control of voltage and its temperature co-efficient in non-volatile memory devices
US7447093B2 (en) * 2006-12-29 2008-11-04 Sandisk Corporation Method for controlling voltage in non-volatile memory systems
US7403434B1 (en) * 2006-12-29 2008-07-22 Sandisk Corporation System for controlling voltage in non-volatile memory systems
KR100908814B1 (ko) * 2007-08-29 2009-07-21 주식회사 하이닉스반도체 코어전압 방전회로 및 이를 포함하는 반도체 메모리장치
US7768856B2 (en) * 2007-10-30 2010-08-03 Spansion Llc Control of temperature slope for band gap reference voltage in a memory device
KR101434400B1 (ko) * 2008-07-09 2014-08-27 삼성전자주식회사 불휘발성 메모리 장치 및 메모리 시스템 및 그것의 관리방법
US7755946B2 (en) * 2008-09-19 2010-07-13 Sandisk Corporation Data state-based temperature compensation during sensing in non-volatile memory
US7804729B2 (en) * 2008-11-14 2010-09-28 Macronix International Co., Ltd. Temperature compensation circuit and method for sensing memory
US8576651B2 (en) 2012-01-20 2013-11-05 Sandisk 3D Llc Temperature compensation of conductive bridge memory arrays
US8902669B2 (en) 2012-11-08 2014-12-02 SanDisk Technologies, Inc. Flash memory with data retention bias
KR102083496B1 (ko) * 2012-11-21 2020-03-02 삼성전자 주식회사 리드 동작 시 온도 보상된 워드 라인 전압을 인가하는 반도체 메모리 장치 및 그 방법
US9171856B2 (en) 2013-10-01 2015-10-27 Ememory Technology Inc. Bias generator for flash memory and control method thereof
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
CN109873621B (zh) 2013-11-14 2023-06-16 鹰港科技有限公司 高压纳秒脉冲发生器
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
JP6379733B2 (ja) * 2014-06-27 2018-08-29 富士通セミコンダクター株式会社 不揮発性半導体記憶装置及びその制御方法
US9653156B2 (en) * 2015-02-20 2017-05-16 Kabushiki Kaisha Toshiba Memory controller, nonvolatile semiconductor memory device and memory system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
EP4266579A3 (de) 2017-02-07 2023-12-27 Eagle Harbor Technologies, Inc. Transformator-resonanzwandler
CN107170484B (zh) * 2017-03-17 2020-01-24 北京兆易创新科技股份有限公司 一种NAND Flash电压自动补偿方法和装置
EP3665775B1 (de) 2017-08-25 2025-08-20 Eagle Harbor Technologies, Inc. Erzeugung einer beliebigen wellenform unter verwendung von nanosekundenimpulsen
KR102375913B1 (ko) 2017-10-18 2022-03-18 삼성전자주식회사 플래시 메모리 장치 및 이의 프로그램 방법
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
CN110782937B (zh) * 2018-07-31 2024-07-30 三星电子株式会社 非易失性存储装置及其编程方法
KR102499709B1 (ko) 2018-08-10 2023-02-16 이글 하버 테크놀로지스, 인코포레이티드 RF 플라즈마 반응기용 플라즈마 시스(sheath) 제어
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
KR20240028538A (ko) 2019-01-08 2024-03-05 이글 하버 테크놀로지스, 인코포레이티드 나노초 펄서 회로의 효율적 에너지 회수
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
KR20230150396A (ko) 2019-12-24 2023-10-30 이글 하버 테크놀로지스, 인코포레이티드 플라즈마 시스템을 위한 나노초 펄서 rf 절연
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
CN119998919A (zh) 2022-09-29 2025-05-13 鹰港科技有限公司 高压等离子控制
US11955193B1 (en) * 2023-12-05 2024-04-09 Aspinity, Inc. Compute-in-memory array multi-range temperature compensation

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JPH11297077A (ja) * 1998-04-06 1999-10-29 Toshiba Corp メモリの過剰消去判定方法

Also Published As

Publication number Publication date
DE60101319T2 (de) 2004-09-16
EP1264312B1 (de) 2003-11-26
US6205074B1 (en) 2001-03-20
DE60101319D1 (de) 2004-01-08
KR20020083165A (ko) 2002-11-01
EP1264312A1 (de) 2002-12-11
WO2001065561A1 (en) 2001-09-07
TW501137B (en) 2002-09-01
CN1406382A (zh) 2003-03-26
CN100524504C (zh) 2009-08-05
JP2003530656A (ja) 2003-10-14
KR100743695B1 (ko) 2007-07-30

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Legal Events

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