ATE109593T1 - Photoelektrisches umwandlungselement und verfahren zu seiner herstellung. - Google Patents
Photoelektrisches umwandlungselement und verfahren zu seiner herstellung.Info
- Publication number
- ATE109593T1 ATE109593T1 AT87300853T AT87300853T ATE109593T1 AT E109593 T1 ATE109593 T1 AT E109593T1 AT 87300853 T AT87300853 T AT 87300853T AT 87300853 T AT87300853 T AT 87300853T AT E109593 T1 ATE109593 T1 AT E109593T1
- Authority
- AT
- Austria
- Prior art keywords
- insulating layer
- forming
- manufacture
- electrode
- photoelectric conversion
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/197—Bipolar transistor image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photovoltaic Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61023282A JPS62179760A (ja) | 1986-02-04 | 1986-02-04 | 光電変換装置の製造方法 |
| JP61125937A JPH0691234B2 (ja) | 1986-06-02 | 1986-06-02 | 光電変換装置 |
| JP61156266A JPS6313369A (ja) | 1986-07-04 | 1986-07-04 | 光電変換装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE109593T1 true ATE109593T1 (de) | 1994-08-15 |
Family
ID=27284192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT87300853T ATE109593T1 (de) | 1986-02-04 | 1987-01-30 | Photoelektrisches umwandlungselement und verfahren zu seiner herstellung. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5089425A (de) |
| EP (1) | EP0232148B1 (de) |
| AT (1) | ATE109593T1 (de) |
| DE (1) | DE3750300T2 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3061891B2 (ja) * | 1991-06-21 | 2000-07-10 | キヤノン株式会社 | 半導体装置の製造方法 |
| US5416344A (en) * | 1992-07-29 | 1995-05-16 | Nikon Corporation | Solid state imaging device and method for producing the same |
| US5552619A (en) * | 1995-05-10 | 1996-09-03 | National Semiconductor Corporation | Capacitor coupled contactless imager with high resolution and wide dynamic range |
| JP2004134514A (ja) * | 2002-10-09 | 2004-04-30 | Canon Inc | 裏面入射型撮像センサ |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3533158A (en) * | 1967-10-30 | 1970-10-13 | Hughes Aircraft Co | Method of utilizing an ion beam to form custom circuits |
| US3816769A (en) * | 1969-12-17 | 1974-06-11 | Integrated Photomatrix Ltd | Method and circuit element for the selective charging of a semiconductor diffusion region |
| US3624428A (en) * | 1970-03-20 | 1971-11-30 | Rca Corp | Electric signal processing circuit employing capacitively scanned phototransistor array |
| JPS49105490A (de) * | 1973-02-07 | 1974-10-05 | ||
| NL7308240A (de) * | 1973-06-14 | 1974-12-17 | ||
| JPS6057714B2 (ja) * | 1978-01-27 | 1985-12-16 | 株式会社日立製作所 | 光半導体装置 |
| FR2461360A1 (fr) * | 1979-07-10 | 1981-01-30 | Thomson Csf | Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede |
| JPS5795769A (en) * | 1980-12-05 | 1982-06-14 | Fuji Photo Film Co Ltd | Semiconductor image pickup device |
| US4686554A (en) * | 1983-07-02 | 1987-08-11 | Canon Kabushiki Kaisha | Photoelectric converter |
| JPS60142561A (ja) * | 1983-12-28 | 1985-07-27 | Matsushita Electric Ind Co Ltd | 撮像装置の製造方法 |
| JPS60251657A (ja) * | 1984-05-28 | 1985-12-12 | Canon Inc | 半導体装置 |
| US4794443A (en) * | 1984-05-28 | 1988-12-27 | Canon Kabushiki Kaisha | Semiconductor device and process for producing same |
| JPH0760888B2 (ja) * | 1985-06-12 | 1995-06-28 | キヤノン株式会社 | 光電変換装置 |
-
1987
- 1987-01-30 DE DE3750300T patent/DE3750300T2/de not_active Expired - Fee Related
- 1987-01-30 EP EP87300853A patent/EP0232148B1/de not_active Expired - Lifetime
- 1987-01-30 AT AT87300853T patent/ATE109593T1/de not_active IP Right Cessation
-
1989
- 1989-09-22 US US07/411,219 patent/US5089425A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3750300D1 (de) | 1994-09-08 |
| DE3750300T2 (de) | 1994-12-15 |
| US5089425A (en) | 1992-02-18 |
| EP0232148A3 (en) | 1988-04-20 |
| EP0232148A2 (de) | 1987-08-12 |
| EP0232148B1 (de) | 1994-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE141715T1 (de) | Verfahren zur herstellung eines dünnfilmtransistors | |
| ES442102A1 (es) | Un dispositivo semiconductor. | |
| DE3751892D1 (de) | Halbleiteranordnung mit zwei Verbindungshalbleitern und Verfahren zu ihrer Herstellung | |
| ATE109593T1 (de) | Photoelektrisches umwandlungselement und verfahren zu seiner herstellung. | |
| MY121209A (en) | Semiconductor device and production thereof. | |
| JPS577972A (en) | Insulated gate type thin film transistor | |
| JPS5395582A (en) | Manufacture for semiconductor device | |
| SE9504150L (sv) | Förfarande vid tillverkning av en halvledaranordning | |
| JPS54879A (en) | Manufacture of mis transistor | |
| JPS5346288A (en) | Mis type semiconductor device | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS5283073A (en) | Production of semiconductor device | |
| JPS5263080A (en) | Production of semiconductor integrated circuit device | |
| JPS522180A (en) | Method of fabricating mos semiconductor integrated circuit | |
| KR930015047A (ko) | 저내늄을 컬렉터로 사용하는 규소 이종접합 쌍극자 트랜지스터 장치의 제조방법 | |
| JPS52123878A (en) | Mos type semiconductor device and its production process | |
| JPS51147278A (en) | Manufacturing process of mis-type semiconductor device | |
| JPS57159069A (en) | Manufacture of p-n junction | |
| JPS5265689A (en) | Semiconductor integrated circuit and its production | |
| JPS5376770A (en) | Production of insulated gate field effect transistor | |
| JPS53144281A (en) | Manufacture of mis semiconductor device | |
| JPS5352388A (en) | Semiconductor device | |
| JPS52123880A (en) | Semiconductor device and is production | |
| JPS5283072A (en) | Production of semiconductor device | |
| KR910001941A (ko) | 모오스 fet 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |