ATE263852T1 - Vorrichtung und verfahren zur epitaktischen bearbeitung eines substrats - Google Patents

Vorrichtung und verfahren zur epitaktischen bearbeitung eines substrats

Info

Publication number
ATE263852T1
ATE263852T1 AT01946908T AT01946908T ATE263852T1 AT E263852 T1 ATE263852 T1 AT E263852T1 AT 01946908 T AT01946908 T AT 01946908T AT 01946908 T AT01946908 T AT 01946908T AT E263852 T1 ATE263852 T1 AT E263852T1
Authority
AT
Austria
Prior art keywords
susceptor
inductor
processing
temperature uniformity
epitactically
Prior art date
Application number
AT01946908T
Other languages
English (en)
Inventor
Robert D Mailho
Mark J O'hara
Glenn A Pfefferkorn
Gary Lee Evans
Kristian E Johnsgard
Original Assignee
Mattson Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Tech Inc filed Critical Mattson Tech Inc
Application granted granted Critical
Publication of ATE263852T1 publication Critical patent/ATE263852T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
AT01946908T 2000-01-31 2001-01-22 Vorrichtung und verfahren zur epitaktischen bearbeitung eines substrats ATE263852T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/495,402 US6436796B1 (en) 2000-01-31 2000-01-31 Systems and methods for epitaxial processing of a semiconductor substrate
PCT/US2001/002095 WO2001055479A1 (en) 2000-01-31 2001-01-22 Apparatus and method for epitaxially processing a substrate

Publications (1)

Publication Number Publication Date
ATE263852T1 true ATE263852T1 (de) 2004-04-15

Family

ID=23968515

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01946908T ATE263852T1 (de) 2000-01-31 2001-01-22 Vorrichtung und verfahren zur epitaktischen bearbeitung eines substrats

Country Status (7)

Country Link
US (1) US6436796B1 (de)
EP (1) EP1252364B1 (de)
JP (1) JP4970683B2 (de)
KR (1) KR100694351B1 (de)
AT (1) ATE263852T1 (de)
DE (1) DE60102669T2 (de)
WO (1) WO2001055479A1 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10296448T5 (de) * 2001-03-20 2004-04-15 Mattson Technology Inc., Fremont Verfahren zum Abscheiden einer Schicht mit einer verhältnismässig hohen Dielektrizitätskonstante auf ein Substrat
KR20020080954A (ko) * 2001-04-18 2002-10-26 주성엔지니어링(주) 냉벽 화학기상증착 방법 및 장치
TW559905B (en) * 2001-08-10 2003-11-01 Toshiba Corp Vertical chemical vapor deposition system cross-reference to related applications
KR100402332B1 (ko) * 2001-09-07 2003-10-22 주식회사 시스넥스 균일하게 가스분사가 이루어지는 샤워헤드와유도가열방식에 의해 서셉터 상부의 온도를 균일하게가열하는 수직형 화학기상증착 반응기
US20040247787A1 (en) * 2002-04-19 2004-12-09 Mackie Neil M. Effluent pressure control for use in a processing system
AU2003224977A1 (en) * 2002-04-19 2003-11-03 Mattson Technology, Inc. System for depositing a film onto a substrate using a low vapor pressure gas precursor
DE10302653A1 (de) * 2003-01-20 2004-08-19 Htm Reetz Gmbh Vorrichtung zur Thermomigration
DE102007023970A1 (de) * 2007-05-23 2008-12-04 Aixtron Ag Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate
EP2271587A1 (de) * 2008-03-26 2011-01-12 GT Solar Incorporated Goldbeschichtetes polysiliciumreaktorsystem und verfahren
US20100075488A1 (en) * 2008-09-19 2010-03-25 Applied Materials, Inc. Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism
JP5477145B2 (ja) * 2009-04-28 2014-04-23 三菱マテリアル株式会社 多結晶シリコン反応炉
KR101121432B1 (ko) * 2010-04-20 2012-03-16 엘아이지에이디피 주식회사 서셉터 코팅장치 및 코팅방법
JP4676567B1 (ja) * 2010-07-20 2011-04-27 三井造船株式会社 半導体基板熱処理装置
KR101205433B1 (ko) * 2010-07-28 2012-11-28 국제엘렉트릭코리아 주식회사 기판 서셉터 및 그것을 갖는 증착 장치
CN102505145B (zh) * 2011-10-28 2014-12-10 江西赛维Ldk太阳能多晶硅有限公司 石墨预热片、半导体预热装置、硅芯炉及磷检炉
US20130130184A1 (en) * 2011-11-21 2013-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and Method for Controlling Wafer Temperature
CN103160810B (zh) * 2011-12-09 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种用于感应加热的托盘及等离子体加工设备
TWI650832B (zh) 2013-12-26 2019-02-11 維克儀器公司 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
JP2016035080A (ja) * 2014-08-01 2016-03-17 大陽日酸株式会社 サセプタカバーおよび該サセプタカバーを備えた気相成長装置
JP6361495B2 (ja) * 2014-12-22 2018-07-25 東京エレクトロン株式会社 熱処理装置
ITUB20160556A1 (it) * 2016-02-08 2017-08-08 L P E S P A Suscettore con perno riscaldato e reattore per deposizione epitassiale
WO2018051304A1 (en) * 2016-09-19 2018-03-22 King Abdullah University Of Science And Technology Susceptor
USD860146S1 (en) 2017-11-30 2019-09-17 Veeco Instruments Inc. Wafer carrier with a 33-pocket configuration
USD858469S1 (en) 2018-03-26 2019-09-03 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD866491S1 (en) 2018-03-26 2019-11-12 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD863239S1 (en) 2018-03-26 2019-10-15 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD860147S1 (en) 2018-03-26 2019-09-17 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD854506S1 (en) 2018-03-26 2019-07-23 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
KR102535194B1 (ko) * 2018-04-03 2023-05-22 주성엔지니어링(주) 기판처리장치
US11609121B2 (en) 2018-05-18 2023-03-21 Hatco Corporation Sensor and control systems for food preparation
US11483903B2 (en) 2018-05-18 2022-10-25 Hatco Corporation Multi-coil induction warming system
US11582837B2 (en) 2018-05-18 2023-02-14 Hateo Corporation Temperature-regulating appliance with removable base
DE102018114208A1 (de) * 2018-06-14 2019-12-19 Aixtron Se Abdeckplatte zur Abdeckung der zur Prozesskammer weisenden Seite eines Suszeptors einer Vorrichtung zum Abscheiden von SiC-Schichten
CN110306171B (zh) * 2019-06-28 2023-09-08 郑州磨料磨具磨削研究所有限公司 一种改善气体分布的沉积室及mpcvd装置
CN112366174B (zh) * 2020-09-30 2023-10-13 华灿光电（浙江）有限公司 石墨基座和mocvd设备
CN113862780A (zh) * 2021-08-16 2021-12-31 西安电子科技大学芜湖研究院 一种应用于mocvd设备的可伸缩基座
CN120803151B (zh) * 2025-09-09 2025-11-25 蓝河科技(绍兴)有限公司 半导体制造设备和温度控制方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158438U (ja) 1982-04-16 1983-10-22 東芝機械株式会社 エピタキシヤル成長装置のコイル保持装置
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPS6318618A (ja) * 1986-07-11 1988-01-26 Toshiba Ceramics Co Ltd サセプタ−用カバ−
JPS63119525A (ja) * 1986-11-08 1988-05-24 Hitachi Electronics Eng Co Ltd プラズマｃｖｄ装置
JPH025518A (ja) * 1988-06-24 1990-01-10 Nec Corp 気相成長装置
JPH03160716A (ja) * 1989-11-20 1991-07-10 Kyushu Electron Metal Co Ltd サセプターの温度制御方法
JP3039956B2 (ja) * 1990-04-27 2000-05-08 株式会社日立製作所 マグネトロン陰極構体
JPH0410333U (de) * 1990-05-16 1992-01-29
JPH0653139A (ja) * 1992-07-30 1994-02-25 Nec Corp サセプタ
JP3313789B2 (ja) 1992-11-09 2002-08-12 株式会社日立国際電気 基板処理方法及び半導体製造装置及び半導体装置の製造方法
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5824158A (en) * 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
JP3824675B2 (ja) 1995-03-03 2006-09-20 有限会社デジタル・ウェーブ 結晶製造装置
JP3206375B2 (ja) * 1995-06-20 2001-09-10 信越半導体株式会社 単結晶薄膜の製造方法
US5881208A (en) * 1995-12-20 1999-03-09 Sematech, Inc. Heater and temperature sensor array for rapid thermal processing thermal core
JPH10168565A (ja) * 1996-12-13 1998-06-23 Mitsubishi Electric Corp イオン化ｐｖｄ装置および半導体装置の製造方法
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US6184489B1 (en) * 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6200911B1 (en) * 1998-04-21 2001-03-13 Applied Materials, Inc. Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power
DE19934336A1 (de) * 1998-09-03 2000-03-09 Siemens Ag Vorrichtung zum Herstellen und Bearbeiten von Halbleitersubstraten
US6200433B1 (en) * 1999-11-01 2001-03-13 Applied Materials, Inc. IMP technology with heavy gas sputtering

Also Published As

Publication number Publication date
JP2003520746A (ja) 2003-07-08
EP1252364B1 (de) 2004-04-07
US6436796B1 (en) 2002-08-20
KR100694351B1 (ko) 2007-03-12
DE60102669D1 (de) 2004-05-13
EP1252364A1 (de) 2002-10-30
WO2001055479A1 (en) 2001-08-02
DE60102669T2 (de) 2005-06-16
KR20020086486A (ko) 2002-11-18
JP4970683B2 (ja) 2012-07-11

Similar Documents

Publication Publication Date Title
DE60102669D1 (de) Vorrichtung und verfahren zur epitaktischen bearbeitung eines substrats
ATE440376T1 (de) Verarbeitungssystem und verfahren zum thermischen behandeln eines substrats
US5155062A (en) Method for silicon carbide chemical vapor deposition using levitated wafer system
TWI262959B (en) CVD method and apparatus for forming insulating film containing silicon
SG157279A1 (en) Method for producing an epitaxially coated semiconductor wafer
SE9801190D0 (sv) A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
DE60133092D1 (de) Örtliche erwärmung und kühlung von substraten
TW200708628A (en) Method for silicon nitride chemical vapor deposition
SE9500326D0 (sv) Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
WO2009075124A1 (ja) 半導体装置の製造方法および半導体装置
TW200746350A (en) Wafer holder, method for producing the same and semiconductor production apparatus
WO2000077830A3 (en) A method for the preparation of an epitaxial silicon wafer with intrinsic gettering
CN108028179A (zh) 用于沉积共形bcn膜的方法
FR3068506B1 (fr) Procede pour preparer un support pour une structure semi-conductrice
WO2004057653A3 (en) A method and apparatus for forming a high quality low temperature silicon nitride layer
EP0164928A3 (de) Senkrechter Heisswandreaktor zur chemischen Abscheidung aus der Gasphase
WO2013062317A1 (en) Apparatus and method for fabricating epi wafer and epi wafer
IL135550A0 (en) Method and apparatus for temperature controlled vapor deposition on a substrate
TWI907144B (zh) 提供摻雜矽的處理室
WO2024145454A3 (en) Methods of processing epitaxial semiconductor wafers
TW200508415A (en) Methods of reducing plasma-induced damage for advanced plasma CVD dielectics
JP2016134610A (ja) Ｉｉｉ族窒化物半導体素子とその製造方法
Karasawa et al. Development of Cat-CVD apparatus—A method to control wafer temperatures under thermal influence of heated catalyzer
ATE279784T1 (de) Verfahren zur bor-dotierung von wafern unter einsatz eines vertikalofensystems
JP5264384B2 (ja) 気相成長装置及び気相成長方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties