ATE270459T1 - Niederspannungs-lesekaskodenschaltung mit 2v/3v betriebspannungen und verschiedenen speicherbankkombinationen ohne metallisierung für simultanen flash-speicher - Google Patents

Niederspannungs-lesekaskodenschaltung mit 2v/3v betriebspannungen und verschiedenen speicherbankkombinationen ohne metallisierung für simultanen flash-speicher

Info

Publication number
ATE270459T1
ATE270459T1 AT00968914T AT00968914T ATE270459T1 AT E270459 T1 ATE270459 T1 AT E270459T1 AT 00968914 T AT00968914 T AT 00968914T AT 00968914 T AT00968914 T AT 00968914T AT E270459 T1 ATE270459 T1 AT E270459T1
Authority
AT
Austria
Prior art keywords
amplifier
sense
memory bank
flash memory
metalization
Prior art date
Application number
AT00968914T
Other languages
English (en)
Inventor
Takao Akaogi
Tien-Min Chen
Kazuhiro Kurihara
Original Assignee
Advanced Micro Devices Inc
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc, Fujitsu Ltd filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE270459T1 publication Critical patent/ATE270459T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Read Only Memory (AREA)
  • Amplifiers (AREA)
AT00968914T 1999-10-19 2000-10-07 Niederspannungs-lesekaskodenschaltung mit 2v/3v betriebspannungen und verschiedenen speicherbankkombinationen ohne metallisierung für simultanen flash-speicher ATE270459T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/421,985 US6359808B1 (en) 1999-10-19 1999-10-19 Low voltage read cascode for 2V/3V and different bank combinations without metal options for a simultaneous operation flash memory device
PCT/US2000/027903 WO2001029842A1 (en) 1999-10-19 2000-10-07 Low voltage read cascode for 2v/3v and different bank combinations without metal options for a simultaneous operation flash memory device

Publications (1)

Publication Number Publication Date
ATE270459T1 true ATE270459T1 (de) 2004-07-15

Family

ID=23672900

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00968914T ATE270459T1 (de) 1999-10-19 2000-10-07 Niederspannungs-lesekaskodenschaltung mit 2v/3v betriebspannungen und verschiedenen speicherbankkombinationen ohne metallisierung für simultanen flash-speicher

Country Status (9)

Country Link
US (1) US6359808B1 (de)
EP (1) EP1222663B1 (de)
JP (1) JP4557482B2 (de)
KR (1) KR100645573B1 (de)
CN (1) CN1198287C (de)
AT (1) ATE270459T1 (de)
DE (1) DE60011921T2 (de)
TW (1) TW519653B (de)
WO (1) WO2001029842A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6442069B1 (en) * 2000-12-29 2002-08-27 Intel Corporation Differential signal path for high speed data transmission in flash memory
KR100383267B1 (ko) * 2001-02-23 2003-05-09 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 데이터 리드 방법
US6603683B2 (en) * 2001-06-25 2003-08-05 International Business Machines Corporation Decoding scheme for a stacked bank architecture
CN100431039C (zh) * 2002-02-06 2008-11-05 Nxp股份有限公司 用于读取存储单元的读取电路
US7126869B1 (en) * 2003-06-26 2006-10-24 Cypress Semiconductor Corp. Sense amplifier with dual cascode transistors and improved noise margin
KR100606046B1 (ko) * 2004-01-20 2006-07-28 삼성전자주식회사 휴대용 단말기의 낸드 플래쉬 메모리를 이용한 부팅 장치및 방법
EP1981513B1 (de) 2006-01-19 2015-05-27 Mary Kay, Inc. Zusammensetzungen mit kakadupflaumenextrakt oder assaibeerenextrakt
US8048456B2 (en) 2009-08-28 2011-11-01 Mary Kay Inc. Skin care formulations

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0736273B2 (ja) * 1984-11-26 1995-04-19 株式会社日立製作所 半導体集積回路
US4783764A (en) 1984-11-26 1988-11-08 Hitachi, Ltd. Semiconductor integrated circuit device with built-in memories, and peripheral circuit which may be statically or dynamically operated
JP2616109B2 (ja) * 1990-03-12 1997-06-04 日本電気株式会社 半導体記憶装置
US5245572A (en) * 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
US5291446A (en) 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential
US5263000A (en) 1992-10-22 1993-11-16 Advanced Micro Devices, Inc. Drain power supply
JP3464271B2 (ja) * 1994-04-12 2003-11-05 三菱電機株式会社 不揮発性半導体記憶装置
US5737273A (en) 1995-04-06 1998-04-07 Ricoh Company, Ltd. Sense amplifier and reading circuit with sense amplifier
JPH08279296A (ja) * 1995-04-06 1996-10-22 Ricoh Co Ltd センスアンプ
US5708387A (en) 1995-11-17 1998-01-13 Advanced Micro Devices, Inc. Fast 3-state booster-circuit
US5867430A (en) 1996-12-20 1999-02-02 Advanced Micro Devices Inc Bank architecture for a non-volatile memory enabling simultaneous reading and writing
US5847998A (en) 1996-12-20 1998-12-08 Advanced Micro Devices, Inc. Non-volatile memory array that enables simultaneous read and write operations
US5841696A (en) * 1997-03-05 1998-11-24 Advanced Micro Devices, Inc. Non-volatile memory enabling simultaneous reading and writing by time multiplexing a decode path
JPH1166875A (ja) * 1997-08-18 1999-03-09 Fujitsu Ltd 半導体記憶回路

Also Published As

Publication number Publication date
KR100645573B1 (ko) 2006-11-13
EP1222663A1 (de) 2002-07-17
DE60011921D1 (de) 2004-08-05
TW519653B (en) 2003-02-01
DE60011921T2 (de) 2005-07-14
US6359808B1 (en) 2002-03-19
JP2003512697A (ja) 2003-04-02
WO2001029842A1 (en) 2001-04-26
CN1198287C (zh) 2005-04-20
JP4557482B2 (ja) 2010-10-06
EP1222663B1 (de) 2004-06-30
CN1379904A (zh) 2002-11-13
KR20030009311A (ko) 2003-01-29

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