ATE275761T1 - Halbleitersubstrat und verfahren zu dessen herstellung - Google Patents
Halbleitersubstrat und verfahren zu dessen herstellungInfo
- Publication number
- ATE275761T1 ATE275761T1 AT98302187T AT98302187T ATE275761T1 AT E275761 T1 ATE275761 T1 AT E275761T1 AT 98302187 T AT98302187 T AT 98302187T AT 98302187 T AT98302187 T AT 98302187T AT E275761 T1 ATE275761 T1 AT E275761T1
- Authority
- AT
- Austria
- Prior art keywords
- porous
- substrate
- image
- layer
- insulating layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
Landscapes
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7351997 | 1997-03-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE275761T1 true ATE275761T1 (de) | 2004-09-15 |
Family
ID=13520585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT98302187T ATE275761T1 (de) | 1997-03-26 | 1998-03-24 | Halbleitersubstrat und verfahren zu dessen herstellung |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20030190794A1 (de) |
| EP (1) | EP0867919B1 (de) |
| KR (1) | KR100356416B1 (de) |
| CN (1) | CN1114936C (de) |
| AT (1) | ATE275761T1 (de) |
| AU (1) | AU742371B2 (de) |
| CA (1) | CA2233132C (de) |
| DE (1) | DE69826053T2 (de) |
| SG (1) | SG68033A1 (de) |
| TW (1) | TW376585B (de) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143628A (en) * | 1997-03-27 | 2000-11-07 | Canon Kabushiki Kaisha | Semiconductor substrate and method of manufacturing the same |
| US8507361B2 (en) * | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
| TWI226139B (en) | 2002-01-31 | 2005-01-01 | Osram Opto Semiconductors Gmbh | Method to manufacture a semiconductor-component |
| EP2894678A1 (de) | 2003-01-31 | 2015-07-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
| JP4904150B2 (ja) * | 2003-01-31 | 2012-03-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光素子の製造方法 |
| EP1620583A4 (de) | 2003-05-06 | 2009-04-22 | Canon Kk | Halbleitersubstrat, halbleitervorrichtung, leuchtdiode und herstellungsverfahren dafür |
| JP2004335662A (ja) | 2003-05-06 | 2004-11-25 | Canon Inc | 部材及び部材の製造方法 |
| JP2004335642A (ja) * | 2003-05-06 | 2004-11-25 | Canon Inc | 基板およびその製造方法 |
| DE102005047149A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Epitaxiesubstrat, damit hergestelltes Bauelement sowie entsprechende Herstellverfahren |
| DE102007021991B4 (de) * | 2007-05-10 | 2015-03-26 | Infineon Technologies Austria Ag | Verfahren zum Herstellen eines Halbleiterbauelements durch Ausbilden einer porösen Zwischenschicht |
| KR101443580B1 (ko) * | 2007-05-11 | 2014-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Soi구조를 갖는 기판 |
| DE102009004560B3 (de) * | 2009-01-14 | 2010-08-26 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Herstellen eines Halbleiterbauelementes, insbesondere einer Solarzelle, auf Basis einer Germaniumdünnschicht |
| DE102009004559A1 (de) * | 2009-01-14 | 2010-07-22 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Herstellen eines Halbleiterbauelementes, insbesondere einer Solarzelle, auf Basis einer Halbleiterdünnschicht mit einem direkten Halbleitermaterial |
| US8043938B2 (en) * | 2009-05-14 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate and SOI substrate |
| US9847243B2 (en) | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
| US8441071B2 (en) * | 2010-01-05 | 2013-05-14 | International Business Machines Corporation | Body contacted transistor with reduced parasitic capacitance |
| US8476147B2 (en) * | 2010-02-03 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | SOI substrate and manufacturing method thereof |
| FR2995444B1 (fr) * | 2012-09-10 | 2016-11-25 | Soitec Silicon On Insulator | Procede de detachement d'une couche |
| EP2912685B1 (de) * | 2012-10-26 | 2020-04-08 | RFHIC Corporation | Halbleiterbauelemente mit verbesserter zuverlässigkeit und gebrauchsdauer und verfahren zur herstellung davon |
| US20180068886A1 (en) * | 2016-09-02 | 2018-03-08 | Qualcomm Incorporated | Porous semiconductor layer transfer for an integrated circuit structure |
| JP2019033134A (ja) * | 2017-08-04 | 2019-02-28 | 株式会社ディスコ | ウエーハ生成方法 |
| US11211259B2 (en) * | 2018-04-20 | 2021-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for embedded gettering in a silicon on insulator wafer |
| JP2022541172A (ja) * | 2019-07-19 | 2022-09-22 | アイキューイー ピーエルシー | 調整可能な誘電率及び調整可能な熱伝導率を有する半導体材料 |
| CN112820829A (zh) | 2019-11-18 | 2021-05-18 | 环球展览公司 | 用于高分辨率ovjp印刷oled显示器的像素配置 |
| US11903300B2 (en) * | 2019-11-18 | 2024-02-13 | Universal Display Corporation | Pixel configurations for high resolution OVJP printed OLED displays |
| GB2612040B (en) | 2021-10-19 | 2025-02-12 | Iqe Plc | Porous distributed Bragg reflector apparatuses, systems, and methods |
| DE202024100459U1 (de) * | 2023-01-30 | 2024-05-14 | Umicore | Verbundhalbleitersubstrate |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985005734A1 (fr) * | 1984-05-29 | 1985-12-19 | Mitsui Toatsu Chemicals, Incorporated | Film d'usinage de tranches de semi-conducteurs |
| US4819387A (en) * | 1987-12-16 | 1989-04-11 | Motorola, Inc. | Method of slicing semiconductor crystal |
| EP0553856B1 (de) * | 1992-01-31 | 2002-04-17 | Canon Kabushiki Kaisha | Verfahren zur Herstellung eines Halbleitersubstrats |
| KR970009156A (ko) * | 1995-07-07 | 1997-02-24 | 김광호 | 보호모드를 가지는 팩시밀리 시스템 |
| EP0755068B1 (de) * | 1995-07-21 | 2003-06-04 | Canon Kabushiki Kaisha | Halbleitendes Substrat und dessen Herstellungsverfahren |
| EP0797258B1 (de) * | 1996-03-18 | 2011-07-20 | Sony Corporation | Herstellungsverfahren von Dünnschichthalbleitern, Solarzellen und lichtemittierenden Dioden |
| EP0840381A3 (de) * | 1996-10-31 | 1999-08-04 | Sony Corporation | Dünnschicht-Halbleiter-Vorrichtung und Verfahren und Vorrichtung zu ihrer Herstellung und Dünnschicht-Sonnenzellenmodul und Herstellungsverfahren |
| CA2220600C (en) * | 1996-11-15 | 2002-02-12 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor article |
-
1998
- 1998-03-24 AT AT98302187T patent/ATE275761T1/de not_active IP Right Cessation
- 1998-03-24 EP EP98302187A patent/EP0867919B1/de not_active Expired - Lifetime
- 1998-03-24 TW TW087104398A patent/TW376585B/zh not_active IP Right Cessation
- 1998-03-24 DE DE69826053T patent/DE69826053T2/de not_active Expired - Lifetime
- 1998-03-25 US US09/047,338 patent/US20030190794A1/en not_active Abandoned
- 1998-03-25 CA CA002233132A patent/CA2233132C/en not_active Expired - Fee Related
- 1998-03-25 SG SG1998000614A patent/SG68033A1/en unknown
- 1998-03-26 KR KR1019980010435A patent/KR100356416B1/ko not_active Expired - Fee Related
- 1998-03-26 AU AU59666/98A patent/AU742371B2/en not_active Ceased
- 1998-03-26 CN CN98114894A patent/CN1114936C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2233132C (en) | 2002-04-02 |
| EP0867919B1 (de) | 2004-09-08 |
| DE69826053T2 (de) | 2005-09-29 |
| AU5966698A (en) | 1998-10-01 |
| DE69826053D1 (de) | 2004-10-14 |
| SG68033A1 (en) | 1999-10-19 |
| CN1114936C (zh) | 2003-07-16 |
| US20030190794A1 (en) | 2003-10-09 |
| AU742371B2 (en) | 2002-01-03 |
| EP0867919A2 (de) | 1998-09-30 |
| KR100356416B1 (ko) | 2002-11-18 |
| TW376585B (en) | 1999-12-11 |
| KR19980080688A (ko) | 1998-11-25 |
| EP0867919A3 (de) | 1999-06-16 |
| CN1200560A (zh) | 1998-12-02 |
| CA2233132A1 (en) | 1998-09-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |