ATE473518T1 - Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungen - Google Patents
Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungenInfo
- Publication number
- ATE473518T1 ATE473518T1 AT03447188T AT03447188T ATE473518T1 AT E473518 T1 ATE473518 T1 AT E473518T1 AT 03447188 T AT03447188 T AT 03447188T AT 03447188 T AT03447188 T AT 03447188T AT E473518 T1 ATE473518 T1 AT E473518T1
- Authority
- AT
- Austria
- Prior art keywords
- solar cells
- producing thin
- film components
- thin film
- soi applications
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1924—Preparing SOI wafers with separation/delamination along a porous layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Recrystallisation Techniques (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02447146A EP1385199A1 (de) | 2002-07-24 | 2002-07-24 | Verfahren zur Herstellung von Dünnfilmelementen für Solarzellen oder SOI Anwendungen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE473518T1 true ATE473518T1 (de) | 2010-07-15 |
Family
ID=29797373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03447188T ATE473518T1 (de) | 2002-07-24 | 2003-07-18 | Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungen |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7022585B2 (de) |
| EP (1) | EP1385199A1 (de) |
| AT (1) | ATE473518T1 (de) |
| DE (1) | DE60333245D1 (de) |
| ES (1) | ES2347141T3 (de) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1385199A1 (de) * | 2002-07-24 | 2004-01-28 | IMEC vzw, Interuniversitair Microelectronica Centrum vzw | Verfahren zur Herstellung von Dünnfilmelementen für Solarzellen oder SOI Anwendungen |
| US7408566B2 (en) * | 2003-10-22 | 2008-08-05 | Oki Data Corporation | Semiconductor device, LED print head and image-forming apparatus using same, and method of manufacturing semiconductor device |
| US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
| US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
| US8420435B2 (en) * | 2009-05-05 | 2013-04-16 | Solexel, Inc. | Ion implantation fabrication process for thin-film crystalline silicon solar cells |
| US8129822B2 (en) * | 2006-10-09 | 2012-03-06 | Solexel, Inc. | Template for three-dimensional thin-film solar cell manufacturing and methods of use |
| US20090107545A1 (en) | 2006-10-09 | 2009-04-30 | Soltaix, Inc. | Template for pyramidal three-dimensional thin-film solar cell manufacturing and methods of use |
| US7244630B2 (en) * | 2005-04-05 | 2007-07-17 | Philips Lumileds Lighting Company, Llc | A1InGaP LED having reduced temperature dependence |
| WO2006131177A2 (de) * | 2005-06-06 | 2006-12-14 | Universität Stuttgart | Verfahren zur herstellung von saatschichten zur abscheidung von halbleitermaterial |
| FR2895562B1 (fr) * | 2005-12-27 | 2008-03-28 | Commissariat Energie Atomique | Procede de relaxation d'une couche mince contrainte |
| US20070223996A1 (en) * | 2006-03-27 | 2007-09-27 | Green Donald L | Emissive road marker system |
| US20100304521A1 (en) * | 2006-10-09 | 2010-12-02 | Solexel, Inc. | Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells |
| US8035028B2 (en) * | 2006-10-09 | 2011-10-11 | Solexel, Inc. | Pyramidal three-dimensional thin-film solar cells |
| WO2011072161A2 (en) | 2009-12-09 | 2011-06-16 | Solexel, Inc. | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors |
| US8193076B2 (en) | 2006-10-09 | 2012-06-05 | Solexel, Inc. | Method for releasing a thin semiconductor substrate from a reusable template |
| US8293558B2 (en) * | 2006-10-09 | 2012-10-23 | Solexel, Inc. | Method for releasing a thin-film substrate |
| US7999174B2 (en) * | 2006-10-09 | 2011-08-16 | Solexel, Inc. | Solar module structures and assembly methods for three-dimensional thin-film solar cells |
| US20080264477A1 (en) * | 2006-10-09 | 2008-10-30 | Soltaix, Inc. | Methods for manufacturing three-dimensional thin-film solar cells |
| WO2009026240A1 (en) * | 2007-08-17 | 2009-02-26 | Solexel, Inc. | Methods for liquid transfer coating of three-dimensional substrates |
| US20100144080A1 (en) * | 2008-06-02 | 2010-06-10 | Solexel, Inc. | Method and apparatus to transfer coat uneven surface |
| US20100108130A1 (en) * | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin Interdigitated backside contact solar cell and manufacturing process thereof |
| US8288195B2 (en) * | 2008-11-13 | 2012-10-16 | Solexel, Inc. | Method for fabricating a three-dimensional thin-film semiconductor substrate from a template |
| US8294026B2 (en) * | 2008-11-13 | 2012-10-23 | Solexel, Inc. | High-efficiency thin-film solar cells |
| EP2371006A4 (de) * | 2008-11-26 | 2013-05-01 | Solexel Inc | Trunkierte pyramidenstruktren für durchsichtige solarzellen |
| MY170119A (en) * | 2009-01-15 | 2019-07-05 | Trutag Tech Inc | Porous silicon electro-etching system and method |
| US8999058B2 (en) | 2009-05-05 | 2015-04-07 | Solexel, Inc. | High-productivity porous semiconductor manufacturing equipment |
| US8906218B2 (en) | 2010-05-05 | 2014-12-09 | Solexel, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
| US9076642B2 (en) | 2009-01-15 | 2015-07-07 | Solexel, Inc. | High-Throughput batch porous silicon manufacturing equipment design and processing methods |
| MY162405A (en) * | 2009-02-06 | 2017-06-15 | Solexel Inc | Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template |
| WO2010102013A2 (en) | 2009-03-03 | 2010-09-10 | Akrion Systems Llc | Method for selective under-etching of porous silicon |
| US8828517B2 (en) | 2009-03-23 | 2014-09-09 | Solexel, Inc. | Structure and method for improving solar cell efficiency and mechanical strength |
| EP2419306B1 (de) * | 2009-04-14 | 2016-03-30 | Solexel, Inc. | Hochleistungsreaktor für epitaktische gasphasenabscheidung (cvd) |
| US9099584B2 (en) * | 2009-04-24 | 2015-08-04 | Solexel, Inc. | Integrated three-dimensional and planar metallization structure for thin film solar cells |
| US9318644B2 (en) | 2009-05-05 | 2016-04-19 | Solexel, Inc. | Ion implantation and annealing for thin film crystalline solar cells |
| US8445314B2 (en) * | 2009-05-22 | 2013-05-21 | Solexel, Inc. | Method of creating reusable template for detachable thin film substrate |
| MY159405A (en) * | 2009-05-29 | 2016-12-30 | Solexel Inc | Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing |
| US20100310775A1 (en) * | 2009-06-09 | 2010-12-09 | International Business Machines Corporation | Spalling for a Semiconductor Substrate |
| US8703521B2 (en) * | 2009-06-09 | 2014-04-22 | International Business Machines Corporation | Multijunction photovoltaic cell fabrication |
| US20110048517A1 (en) * | 2009-06-09 | 2011-03-03 | International Business Machines Corporation | Multijunction Photovoltaic Cell Fabrication |
| US8633097B2 (en) | 2009-06-09 | 2014-01-21 | International Business Machines Corporation | Single-junction photovoltaic cell |
| US8802477B2 (en) * | 2009-06-09 | 2014-08-12 | International Business Machines Corporation | Heterojunction III-V photovoltaic cell fabrication |
| DE102009053262A1 (de) * | 2009-11-13 | 2011-05-19 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Bilden von dünnen Halbleiterschichtsubstraten sowie Verfahren zum Herstellen eines Halbleiterbauelements, insbesondere einer Solarzelle, mit einem solchen Halbleiterschichtsubstrat |
| WO2011064368A1 (en) | 2009-11-30 | 2011-06-03 | Imec | Method for manufacturing photovoltaic modules comprising back-contact cells |
| FR2953328B1 (fr) * | 2009-12-01 | 2012-03-30 | S O I Tec Silicon On Insulator Tech | Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques |
| CN102844883B (zh) | 2010-02-12 | 2016-01-20 | 速力斯公司 | 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板 |
| EP2580775A4 (de) | 2010-06-09 | 2014-05-07 | Solexel Inc | Hochproduktives dünnschichtablagerungsverfahren und -system |
| MY158500A (en) | 2010-08-05 | 2016-10-14 | Solexel Inc | Backplane reinforcement and interconnects for solar cells |
| DE102011002649A1 (de) | 2011-01-13 | 2012-07-19 | Martin-Luther-Universität Halle-Wittenberg | Halbleiterbauelement und Verfahren zu seiner Herstellung |
| EP2710639A4 (de) | 2011-05-20 | 2015-11-25 | Solexel Inc | Selbstaktivierte vorderseiten-vorspannung für eine solarzelle |
| US9735126B2 (en) * | 2011-06-07 | 2017-08-15 | Infineon Technologies Ag | Solder alloys and arrangements |
| US8518807B1 (en) * | 2012-06-22 | 2013-08-27 | International Business Machines Corporation | Radiation hardened SOI structure and method of making same |
| US9064789B2 (en) * | 2013-08-12 | 2015-06-23 | International Business Machines Corporation | Bonded epitaxial oxide structures for compound semiconductor on silicon substrates |
| US9236241B2 (en) * | 2014-05-05 | 2016-01-12 | Infineon Technologies Dresden Gmbh | Wafer, a method for processing a wafer, and a method for processing a carrier |
| CN112382699A (zh) * | 2020-10-30 | 2021-02-19 | 重庆神华薄膜太阳能科技有限公司 | 一种柔性薄膜器件及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5391257A (en) * | 1993-12-10 | 1995-02-21 | Rockwell International Corporation | Method of transferring a thin film to an alternate substrate |
| JP3352340B2 (ja) * | 1995-10-06 | 2002-12-03 | キヤノン株式会社 | 半導体基体とその製造方法 |
| US6326280B1 (en) | 1995-02-02 | 2001-12-04 | Sony Corporation | Thin film semiconductor and method for making thin film semiconductor |
| US5843811A (en) * | 1996-04-10 | 1998-12-01 | University Of Florida | Method of fabricating a crystalline thin film on an amorphous substrate |
| JP3492142B2 (ja) | 1997-03-27 | 2004-02-03 | キヤノン株式会社 | 半導体基材の製造方法 |
| JP3647191B2 (ja) | 1997-03-27 | 2005-05-11 | キヤノン株式会社 | 半導体装置の製造方法 |
| DE19841430A1 (de) * | 1998-09-10 | 2000-05-25 | Inst Physikalische Elektronik | Verfahren zur Herstellung kristalliner Halbleiterschichten |
| JP2001094136A (ja) * | 1999-09-22 | 2001-04-06 | Canon Inc | 半導体素子モジュールの製造方法および太陽電池モジュールの製造方法 |
| EP1132952B1 (de) * | 2000-03-10 | 2016-11-23 | Imec | Verfahren zur Herstellung und Abhebung von einer porösen Siliziumschicht |
| GB0016937D0 (en) * | 2000-07-10 | 2000-08-30 | Unilever Plc | Antiperspirant compositions |
| US7045878B2 (en) * | 2001-05-18 | 2006-05-16 | Reveo, Inc. | Selectively bonded thin film layer and substrate layer for processing of useful devices |
| EP1385199A1 (de) * | 2002-07-24 | 2004-01-28 | IMEC vzw, Interuniversitair Microelectronica Centrum vzw | Verfahren zur Herstellung von Dünnfilmelementen für Solarzellen oder SOI Anwendungen |
-
2002
- 2002-07-24 EP EP02447146A patent/EP1385199A1/de not_active Withdrawn
-
2003
- 2003-07-18 AT AT03447188T patent/ATE473518T1/de not_active IP Right Cessation
- 2003-07-18 DE DE60333245T patent/DE60333245D1/de not_active Expired - Lifetime
- 2003-07-18 ES ES03447188T patent/ES2347141T3/es not_active Expired - Lifetime
- 2003-07-24 US US10/627,576 patent/US7022585B2/en not_active Expired - Lifetime
-
2006
- 2006-03-29 US US11/392,372 patent/US20060184266A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20050020032A1 (en) | 2005-01-27 |
| DE60333245D1 (de) | 2010-08-19 |
| ES2347141T3 (es) | 2010-10-26 |
| US7022585B2 (en) | 2006-04-04 |
| US20060184266A1 (en) | 2006-08-17 |
| EP1385199A1 (de) | 2004-01-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |