ATE473518T1 - Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungen - Google Patents

Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungen

Info

Publication number
ATE473518T1
ATE473518T1 AT03447188T AT03447188T ATE473518T1 AT E473518 T1 ATE473518 T1 AT E473518T1 AT 03447188 T AT03447188 T AT 03447188T AT 03447188 T AT03447188 T AT 03447188T AT E473518 T1 ATE473518 T1 AT E473518T1
Authority
AT
Austria
Prior art keywords
solar cells
producing thin
film components
thin film
soi applications
Prior art date
Application number
AT03447188T
Other languages
English (en)
Inventor
Chetan Singh Solanki
Renat Bilyalov
Jef Poortmans
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Application granted granted Critical
Publication of ATE473518T1 publication Critical patent/ATE473518T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1924—Preparing SOI wafers with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
AT03447188T 2002-07-24 2003-07-18 Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungen ATE473518T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02447146A EP1385199A1 (de) 2002-07-24 2002-07-24 Verfahren zur Herstellung von Dünnfilmelementen für Solarzellen oder SOI Anwendungen

Publications (1)

Publication Number Publication Date
ATE473518T1 true ATE473518T1 (de) 2010-07-15

Family

ID=29797373

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03447188T ATE473518T1 (de) 2002-07-24 2003-07-18 Verfahren zur herstellung von dünnschichtbauelementen für solarzellen oder soi- anwendungen

Country Status (5)

Country Link
US (2) US7022585B2 (de)
EP (1) EP1385199A1 (de)
AT (1) ATE473518T1 (de)
DE (1) DE60333245D1 (de)
ES (1) ES2347141T3 (de)

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US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
US8288195B2 (en) * 2008-11-13 2012-10-16 Solexel, Inc. Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
US8294026B2 (en) * 2008-11-13 2012-10-23 Solexel, Inc. High-efficiency thin-film solar cells
MY160251A (en) * 2008-11-26 2017-02-28 Solexel Inc Truncated pyramid -structures for see-through solar cells
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
US8926803B2 (en) * 2009-01-15 2015-01-06 Solexel, Inc. Porous silicon electro-etching system and method
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US8987032B2 (en) * 2009-03-03 2015-03-24 Akrion Systems, Llc Method for selective under-etching of porous silicon
US8828517B2 (en) 2009-03-23 2014-09-09 Solexel, Inc. Structure and method for improving solar cell efficiency and mechanical strength
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US9099584B2 (en) * 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
EP2427914A4 (de) 2009-05-05 2013-06-05 Solexel Inc Hochproduktionsanlage zur herstellung poröser halbleiter
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
US8445314B2 (en) * 2009-05-22 2013-05-21 Solexel, Inc. Method of creating reusable template for detachable thin film substrate
US8551866B2 (en) * 2009-05-29 2013-10-08 Solexel, Inc. Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
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MY166305A (en) 2009-12-09 2018-06-25 Solexel Inc High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductor absorbers
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US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
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DE102011002649A1 (de) 2011-01-13 2012-07-19 Martin-Luther-Universität Halle-Wittenberg Halbleiterbauelement und Verfahren zu seiner Herstellung
EP2710639A4 (de) 2011-05-20 2015-11-25 Solexel Inc Selbstaktivierte vorderseiten-vorspannung für eine solarzelle
US9735126B2 (en) * 2011-06-07 2017-08-15 Infineon Technologies Ag Solder alloys and arrangements
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Also Published As

Publication number Publication date
US20050020032A1 (en) 2005-01-27
ES2347141T3 (es) 2010-10-26
DE60333245D1 (de) 2010-08-19
EP1385199A1 (de) 2004-01-28
US20060184266A1 (en) 2006-08-17
US7022585B2 (en) 2006-04-04

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