ATE28768T1 - Kontrolle des bandabstandes in amorphen halbleitern. - Google Patents
Kontrolle des bandabstandes in amorphen halbleitern.Info
- Publication number
- ATE28768T1 ATE28768T1 AT83900227T AT83900227T ATE28768T1 AT E28768 T1 ATE28768 T1 AT E28768T1 AT 83900227 T AT83900227 T AT 83900227T AT 83900227 T AT83900227 T AT 83900227T AT E28768 T1 ATE28768 T1 AT E28768T1
- Authority
- AT
- Austria
- Prior art keywords
- control
- band gap
- amorphous semiconductors
- semiconductanes
- deposit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/402—Amorphous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3442—N-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3444—P-type
Landscapes
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Bipolar Transistors (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/323,585 US4465706A (en) | 1981-11-20 | 1981-11-20 | Bandgap control in amorphous semiconductors |
| US06/337,627 US4485128A (en) | 1981-11-20 | 1982-01-07 | Bandgap control in amorphous semiconductors |
| EP83900227A EP0094426B1 (de) | 1981-11-20 | 1982-11-19 | Kontrolle des bandabstandes in amorphen halbleitern |
| PCT/US1982/001640 WO1983001865A1 (en) | 1981-11-20 | 1982-11-19 | Bandgap control in amorphous semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE28768T1 true ATE28768T1 (de) | 1987-08-15 |
Family
ID=26984040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT83900227T ATE28768T1 (de) | 1981-11-20 | 1982-11-19 | Kontrolle des bandabstandes in amorphen halbleitern. |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0094426B1 (de) |
| JP (1) | JPS58501975A (de) |
| AT (1) | ATE28768T1 (de) |
| AU (1) | AU1100582A (de) |
| DE (1) | DE3276918D1 (de) |
| WO (1) | WO1983001865A1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2177119B (en) * | 1985-06-26 | 1989-04-26 | Plessey Co Plc | Organometallic chemical vapour deposition |
| US5155567A (en) * | 1990-01-17 | 1992-10-13 | Ricoh Company, Ltd. | Amorphous photoconductive material and photosensor employing the photoconductive material |
| JP3099957B2 (ja) * | 1990-01-17 | 2000-10-16 | 株式会社リコー | 光導電部材 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4237150A (en) * | 1979-04-18 | 1980-12-02 | The United States Of America As Represented By The United States Department Of Energy | Method of producing hydrogenated amorphous silicon film |
| US4237151A (en) * | 1979-06-26 | 1980-12-02 | The United States Of America As Represented By The United States Department Of Energy | Thermal decomposition of silane to form hydrogenated amorphous Si film |
| US4363828A (en) * | 1979-12-12 | 1982-12-14 | International Business Machines Corp. | Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas |
| FR2490018B1 (fr) * | 1980-09-09 | 1986-01-17 | Energy Conversion Devices Inc | Procede et dispositif pour etalonner les intervalles de bande d'alliages semi-conducteurs amorphes et alliages obtenus |
| US4357179A (en) * | 1980-12-23 | 1982-11-02 | Bell Telephone Laboratories, Incorporated | Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique |
| US4339470A (en) * | 1981-02-13 | 1982-07-13 | Rca Corporation | Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer |
-
1982
- 1982-11-19 DE DE8383900227T patent/DE3276918D1/de not_active Expired
- 1982-11-19 EP EP83900227A patent/EP0094426B1/de not_active Expired
- 1982-11-19 AU AU1100582A patent/AU1100582A/ active Pending
- 1982-11-19 WO PCT/US1982/001640 patent/WO1983001865A1/en not_active Ceased
- 1982-11-19 AT AT83900227T patent/ATE28768T1/de not_active IP Right Cessation
- 1982-11-19 JP JP83500246A patent/JPS58501975A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE3276918D1 (en) | 1987-09-10 |
| EP0094426A4 (de) | 1984-07-18 |
| EP0094426B1 (de) | 1987-08-05 |
| WO1983001865A1 (en) | 1983-05-26 |
| AU1100582A (en) | 1983-06-01 |
| EP0094426A1 (de) | 1983-11-23 |
| JPS58501975A (ja) | 1983-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |