JPS52155189A - Multiple layer crystal growth - Google Patents

Multiple layer crystal growth

Info

Publication number
JPS52155189A
JPS52155189A JP7213276A JP7213276A JPS52155189A JP S52155189 A JPS52155189 A JP S52155189A JP 7213276 A JP7213276 A JP 7213276A JP 7213276 A JP7213276 A JP 7213276A JP S52155189 A JPS52155189 A JP S52155189A
Authority
JP
Japan
Prior art keywords
multiple layer
crystal growth
layer crystal
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7213276A
Other languages
Japanese (ja)
Inventor
Tsuguo Fukuda
Hitoshi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7213276A priority Critical patent/JPS52155189A/en
Publication of JPS52155189A publication Critical patent/JPS52155189A/en
Pending legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To produce a crystal of multiple layer and of controlled shpae by the epitaxial growth of the second single crystal on the first single crystal which is brought into contact with the second melt while the first single crystal is growing by the contact of the first melt with the seed crystal.
COPYRIGHT: (C)1977,JPO&Japio
JP7213276A 1976-06-21 1976-06-21 Multiple layer crystal growth Pending JPS52155189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7213276A JPS52155189A (en) 1976-06-21 1976-06-21 Multiple layer crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7213276A JPS52155189A (en) 1976-06-21 1976-06-21 Multiple layer crystal growth

Publications (1)

Publication Number Publication Date
JPS52155189A true JPS52155189A (en) 1977-12-23

Family

ID=13480454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7213276A Pending JPS52155189A (en) 1976-06-21 1976-06-21 Multiple layer crystal growth

Country Status (1)

Country Link
JP (1) JPS52155189A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3231268A1 (en) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München METHOD AND DEVICE FOR ASYMMETRICALLY COATING A BAND-SHAPED CARRIER BODY WITH SILICON FOR THE PROCESSING OF SOLAR CELLS
CN110227675A (en) * 2018-03-06 2019-09-13 通用汽车环球科技运作有限责任公司 The method of pollutant is optionally removed from optical component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3231268A1 (en) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München METHOD AND DEVICE FOR ASYMMETRICALLY COATING A BAND-SHAPED CARRIER BODY WITH SILICON FOR THE PROCESSING OF SOLAR CELLS
CN110227675A (en) * 2018-03-06 2019-09-13 通用汽车环球科技运作有限责任公司 The method of pollutant is optionally removed from optical component

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