ATE306088T1 - Euv optische vorrichtung mit verstärkter mechanischer stabilität und lithographische maske mit dieser vorrichtung - Google Patents

Euv optische vorrichtung mit verstärkter mechanischer stabilität und lithographische maske mit dieser vorrichtung

Info

Publication number
ATE306088T1
ATE306088T1 AT04354013T AT04354013T ATE306088T1 AT E306088 T1 ATE306088 T1 AT E306088T1 AT 04354013 T AT04354013 T AT 04354013T AT 04354013 T AT04354013 T AT 04354013T AT E306088 T1 ATE306088 T1 AT E306088T1
Authority
AT
Austria
Prior art keywords
mechanical stability
lithographic mask
enhanced mechanical
optical device
euv optical
Prior art date
Application number
AT04354013T
Other languages
English (en)
Inventor
Etienne Quesnel
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE306088T1 publication Critical patent/ATE306088T1/de

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Filters (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT04354013T 2003-04-01 2004-03-16 Euv optische vorrichtung mit verstärkter mechanischer stabilität und lithographische maske mit dieser vorrichtung ATE306088T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0304071A FR2853418B1 (fr) 2003-04-01 2003-04-01 Dispositif optique a stabilite mecanique renforcee fonctionnant dans l'extreme ultraviolet et masque de lithographie comportant un tel dispositif

Publications (1)

Publication Number Publication Date
ATE306088T1 true ATE306088T1 (de) 2005-10-15

Family

ID=32843126

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04354013T ATE306088T1 (de) 2003-04-01 2004-03-16 Euv optische vorrichtung mit verstärkter mechanischer stabilität und lithographische maske mit dieser vorrichtung

Country Status (6)

Country Link
US (1) US7012753B2 (de)
EP (1) EP1464993B1 (de)
JP (1) JP4689182B2 (de)
AT (1) ATE306088T1 (de)
DE (1) DE602004000110T2 (de)
FR (1) FR2853418B1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4692984B2 (ja) * 2004-09-24 2011-06-01 Ｈｏｙａ株式会社 反射型マスクブランク、反射型マスク及び多層膜反射鏡並びにこれらの製造方法
DE102006006283B4 (de) 2006-02-10 2015-05-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thermisch stabiler Multilayer-Spiegel für den EUV-Spektralbereich
US7763399B2 (en) * 2007-08-31 2010-07-27 Intel Corporation Removal of ionic residues or oxides and prevention of photo-induced defects, ionic crystal or oxide growth on photolithographic surfaces
JP5436017B2 (ja) * 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
JP5518366B2 (ja) * 2008-05-16 2014-06-11 株式会社半導体エネルギー研究所 薄膜トランジスタ
WO2009157573A1 (en) * 2008-06-27 2009-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, semiconductor device and electronic device
JP5196507B2 (ja) * 2011-01-05 2013-05-15 Ｈｏｙａ株式会社 反射型マスクブランク、反射型マスク及び多層膜反射鏡
US8974988B2 (en) 2012-04-20 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Mask and method for forming the same
US9773578B2 (en) * 2013-02-15 2017-09-26 Asml Netherlands B.V. Radiation source-collector and method for manufacture
US9690016B2 (en) * 2014-07-11 2017-06-27 Applied Materials, Inc. Extreme ultraviolet reflective element with amorphous layers and method of manufacturing thereof
NL2017602A (en) * 2015-11-02 2017-05-23 Stichting Voor Fundamenteel Onderzoek Der Materie Multilayer Reflector, Method of Manufacturing a Multilayer Reflector and Lithographic Apparatus
WO2020076431A1 (en) * 2018-10-11 2020-04-16 Applied Materials, Inc. Photomask cleaning
KR102511751B1 (ko) * 2019-11-05 2023-03-21 주식회사 에스앤에스텍 극자외선 리소그래피용 블랭크마스크 및 포토마스크
US20240053674A1 (en) * 2022-08-09 2024-02-15 Taiwan Semiconductor Manufacturing Company Ltd. Photomask structure and method of manufacturing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141528A (ja) * 1982-02-18 1983-08-22 Agency Of Ind Science & Technol Ｘ線露光用マスクおよびその製法
US4684565A (en) * 1984-11-20 1987-08-04 Exxon Research And Engineering Company X-ray mirrors made from multi-layered material
US5310603A (en) * 1986-10-01 1994-05-10 Canon Kabushiki Kaisha Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray
JP2692881B2 (ja) * 1988-08-17 1997-12-17 キヤノン株式会社 軟ｘ線又は真空紫外線用多層膜の製造方法ならびに光学素子
JPH09230098A (ja) * 1996-02-21 1997-09-05 Nippon Telegr & Teleph Corp <Ntt> 多層膜ｘ線反射鏡
ES2256948T3 (es) * 1997-06-16 2006-07-16 Robert Bosch Gmbh Procedimiento y dispositivo para el recubrimiento en fase de vacio de un sustrato.
US5958605A (en) * 1997-11-10 1999-09-28 Regents Of The University Of California Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography
US6011646A (en) * 1998-02-20 2000-01-04 The Regents Of The Unviersity Of California Method to adjust multilayer film stress induced deformation of optics
US20020014403A1 (en) * 2000-04-07 2002-02-07 Eiichi Hoshino Method of fabricating reflective mask, and methods and apparatus of detecting wet etching end point and inspecting side etching amount
US6396900B1 (en) * 2001-05-01 2002-05-28 The Regents Of The University Of California Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application

Also Published As

Publication number Publication date
JP2004334177A (ja) 2004-11-25
US20040233535A1 (en) 2004-11-25
JP4689182B2 (ja) 2011-05-25
FR2853418B1 (fr) 2005-08-19
EP1464993B1 (de) 2005-10-05
DE602004000110T2 (de) 2006-07-06
FR2853418A1 (fr) 2004-10-08
EP1464993A1 (de) 2004-10-06
US7012753B2 (en) 2006-03-14
DE602004000110D1 (de) 2006-02-16

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