ATE310975T1 - Verfahren zur herstellung eines für die bildung metallischer leiterbahnen im submikronbereich geeigneten musters - Google Patents

Verfahren zur herstellung eines für die bildung metallischer leiterbahnen im submikronbereich geeigneten musters

Info

Publication number
ATE310975T1
ATE310975T1 AT00907663T AT00907663T ATE310975T1 AT E310975 T1 ATE310975 T1 AT E310975T1 AT 00907663 T AT00907663 T AT 00907663T AT 00907663 T AT00907663 T AT 00907663T AT E310975 T1 ATE310975 T1 AT E310975T1
Authority
AT
Austria
Prior art keywords
substrate
volume percent
producing
formation
conductive tracks
Prior art date
Application number
AT00907663T
Other languages
English (en)
Inventor
Randy D Redd
Ralph R Dammel
John P Sagan
Mark A Spak
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Application granted granted Critical
Publication of ATE310975T1 publication Critical patent/ATE310975T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Catalysts (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Coating With Molten Metal (AREA)
  • Load-Engaging Elements For Cranes (AREA)
  • Physical Vapour Deposition (AREA)
AT00907663T 1999-03-12 2000-03-03 Verfahren zur herstellung eines für die bildung metallischer leiterbahnen im submikronbereich geeigneten musters ATE310975T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/268,438 US6372414B1 (en) 1999-03-12 1999-03-12 Lift-off process for patterning fine metal lines
PCT/EP2000/001831 WO2000055691A1 (en) 1999-03-12 2000-03-03 Method for producing a pattern suitable for forming sub-micron width metal lines

Publications (1)

Publication Number Publication Date
ATE310975T1 true ATE310975T1 (de) 2005-12-15

Family

ID=23023010

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00907663T ATE310975T1 (de) 1999-03-12 2000-03-03 Verfahren zur herstellung eines für die bildung metallischer leiterbahnen im submikronbereich geeigneten musters

Country Status (11)

Country Link
US (1) US6372414B1 (de)
EP (1) EP1166182B1 (de)
JP (1) JP4495863B2 (de)
KR (1) KR100593653B1 (de)
CN (1) CN1175320C (de)
AT (1) ATE310975T1 (de)
DE (1) DE60024244T2 (de)
HK (1) HK1044824B (de)
MY (1) MY122595A (de)
TW (1) TW548515B (de)
WO (1) WO2000055691A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0213695D0 (en) * 2002-06-14 2002-07-24 Filtronic Compound Semiconduct Fabrication method
WO2004101174A1 (ja) * 2003-05-19 2004-11-25 Taiyo Ink Mfg. Co., Ltd. レリーフイメージの形成方法およびそのパターン形成物
WO2005069705A1 (ja) * 2004-01-15 2005-07-28 Matsushita Electric Industrial Co., Ltd. 金属パターン及びその製造方法
JP2005353763A (ja) 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JP4793927B2 (ja) * 2005-11-24 2011-10-12 東京エレクトロン株式会社 基板処理方法及びその装置
KR100817101B1 (ko) * 2007-04-04 2008-03-26 한국과학기술원 폴리머 또는 레지스트 패턴과 이를 이용한 몰드, 금속 박막패턴, 금속 패턴 및 이들의 형성 방법
CN109406586A (zh) * 2017-08-18 2019-03-01 蓝思科技（长沙）有限公司 碳纳米管传感器的制作方法及其用途
CN111522208A (zh) * 2020-05-06 2020-08-11 南京南大光电工程研究院有限公司 使用正胶做掩膜进行金属薄膜剥离的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961100A (en) * 1974-09-16 1976-06-01 Rca Corporation Method for developing electron beam sensitive resist films
JPS6032047A (ja) * 1983-08-02 1985-02-19 Matsushita Electric Ind Co Ltd 微細加工方法
JPH063549B2 (ja) 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPS6419344A (en) 1986-01-14 1989-01-23 Sumitomo Chemical Co Organic alkali developing solution for positive type photoresist
DE3705896A1 (de) 1986-02-24 1987-08-27 Tokyo Ohka Kogyo Co Ltd Verfahren zur herstellung eines fotoresistmusters auf einer substratflaeche und ein dafuer geeignetes schaumentfernungsmittel
US5069996A (en) * 1989-07-24 1991-12-03 Ocg Microelectronic Materials, Inc. Process for developing selected positive photoresists
US5236810A (en) * 1989-10-03 1993-08-17 Kansai Paint Co., Ltd. Process for preparing printed-circuit board
US5436114A (en) * 1989-12-06 1995-07-25 Hitachi, Ltd. Method of optical lithography with super resolution and projection printing apparatus
US5252436A (en) 1989-12-15 1993-10-12 Basf Aktiengesellschaft Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds
JPH03235322A (ja) * 1990-02-13 1991-10-21 Nec Corp レジストパターン形成方法
JP3235322B2 (ja) 1994-02-04 2001-12-04 株式会社デンソー ドア装置
JPH09147429A (ja) * 1995-11-20 1997-06-06 Sony Corp スタンパの製造方法
JP2950407B2 (ja) * 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法

Also Published As

Publication number Publication date
WO2000055691A1 (en) 2000-09-21
EP1166182A1 (de) 2002-01-02
CN1175320C (zh) 2004-11-10
KR20010113735A (ko) 2001-12-28
MY122595A (en) 2006-04-29
DE60024244T2 (de) 2006-08-03
TW548515B (en) 2003-08-21
HK1044824A1 (en) 2002-11-01
CN1343326A (zh) 2002-04-03
HK1044824B (zh) 2005-04-08
KR100593653B1 (ko) 2006-06-30
DE60024244D1 (de) 2005-12-29
JP4495863B2 (ja) 2010-07-07
JP2002539505A (ja) 2002-11-19
EP1166182B1 (de) 2005-11-23
US6372414B1 (en) 2002-04-16

Similar Documents

Publication Publication Date Title
KR930010060B1 (ko) 땜납도금회로와 관통공을 갖는 인쇄회로판의 제조방법
EP1248305A3 (de) Verfahren zur Herstellung eines magnetischen Speichers
US5407788A (en) Photoresist stripping method
DE60335120D1 (de) Zusammensetzung fur antireflexbeschichtungen und verfahren zur bildung einer struktur
ATE310975T1 (de) Verfahren zur herstellung eines für die bildung metallischer leiterbahnen im submikronbereich geeigneten musters
TW353159B (en) Method of developing positive photoresist and compositions therefor
MY140694A (en) Pattern forming method and treating agent therefor
DE69515571D1 (de) Verfahren zur Herstellung eines mit einer feinstrukturierten Nesa-Glas-Membrane beschichteten Glassubstrats
TW418345B (en) Pattern formation method
KR970004758B1 (ko) 인쇄 배선기판의 제조방법
US3240684A (en) Method of etching rhodium plated metal layers and of making rhodium plated printed circuit boards
US3620736A (en) Photofabrication system using developed negative and positive images in combination with negative-working and positive-working photoresist compositions to produce resists on opposite sides of a workpiece
JP3804534B2 (ja) リードフレームの製造方法
US2389504A (en) Process of making reticles or the like
KR960001894A (ko) 레지스트 패턴의 형성방법과 그 방법에 쓰이는 산성 수용성 재료 조성물
JPS6318692A (ja) 印刷配線板の製造方法
JPS57202535A (en) Formation of negative resist pattern
JPH03257178A (ja) 装飾部材の蝕刻方法
TW200500800A (en) Resist pattern formation method
JP3972498B2 (ja) カゼインレジストパターンの形成方法
JPS63177518A (ja) パタ−ン形成方法
JP3655029B2 (ja) 電着レジスト皮膜の露光方法
CN101313252B (zh) 显影剂溶液及用法
JPH06337524A (ja) フォトレジストパターニング被膜の硬膜処理剤および硬膜処理方法
JPH02269350A (ja) ポジ型レジスト及びレジストパターン形成方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties