ATE321899T1 - Verfahren zur herstellung eines films aus kohlenstoffdotiertem oxid - Google Patents

Verfahren zur herstellung eines films aus kohlenstoffdotiertem oxid

Info

Publication number
ATE321899T1
ATE321899T1 AT02800893T AT02800893T ATE321899T1 AT E321899 T1 ATE321899 T1 AT E321899T1 AT 02800893 T AT02800893 T AT 02800893T AT 02800893 T AT02800893 T AT 02800893T AT E321899 T1 ATE321899 T1 AT E321899T1
Authority
AT
Austria
Prior art keywords
doped oxide
substrate
oxide film
carbon doped
carbon
Prior art date
Application number
AT02800893T
Other languages
English (en)
Inventor
Ebrahim Andideh
Kevin Peterson
Jeffrey Bielefeld
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE321899T1 publication Critical patent/ATE321899T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Carbon And Carbon Compounds (AREA)
AT02800893T 2001-10-05 2002-10-01 Verfahren zur herstellung eines films aus kohlenstoffdotiertem oxid ATE321899T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/972,228 US6677253B2 (en) 2001-10-05 2001-10-05 Carbon doped oxide deposition

Publications (1)

Publication Number Publication Date
ATE321899T1 true ATE321899T1 (de) 2006-04-15

Family

ID=25519375

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02800893T ATE321899T1 (de) 2001-10-05 2002-10-01 Verfahren zur herstellung eines films aus kohlenstoffdotiertem oxid

Country Status (8)

Country Link
US (2) US6677253B2 (de)
EP (1) EP1432843B1 (de)
CN (1) CN1723295A (de)
AT (1) ATE321899T1 (de)
DE (1) DE60210337T2 (de)
MY (1) MY122888A (de)
TW (1) TWI297738B (de)
WO (1) WO2003031676A1 (de)

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US6800571B2 (en) * 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
US6887780B2 (en) 2001-08-31 2005-05-03 Intel Corporation Concentration graded carbon doped oxide
US7060330B2 (en) * 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US6936551B2 (en) * 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US7056560B2 (en) * 2002-05-08 2006-06-06 Applies Materials Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
US7125583B2 (en) 2002-05-23 2006-10-24 Intel Corporation Chemical vapor deposition chamber pre-deposition treatment for improved carbon doped oxide thickness uniformity and throughput
US20050214457A1 (en) * 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
US7622400B1 (en) 2004-05-18 2009-11-24 Novellus Systems, Inc. Method for improving mechanical properties of low dielectric constant materials
US7138323B2 (en) * 2004-07-28 2006-11-21 Intel Corporation Planarizing a semiconductor structure to form replacement metal gates
US20060105581A1 (en) * 2004-11-18 2006-05-18 Bielefeld Jeffery D Glycol doping agents in carbon doped oxide films
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
US7297376B1 (en) 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
DE102007023970A1 (de) * 2007-05-23 2008-12-04 Aixtron Ag Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate
US8247332B2 (en) 2009-12-04 2012-08-21 Novellus Systems, Inc. Hardmask materials
US9337068B2 (en) 2012-12-18 2016-05-10 Lam Research Corporation Oxygen-containing ceramic hard masks and associated wet-cleans
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
US11411095B2 (en) 2017-11-30 2022-08-09 Intel Corporation Epitaxial source or drain structures for advanced integrated circuit structure fabrication
TW202425290A (zh) 2017-11-30 2024-06-16 美商英特爾股份有限公司 用於先進積體電路結構製造之互連線的插塞
SG11202100058RA (en) * 2018-08-29 2021-03-30 Applied Materials Inc Non-uv high hardness low k film deposition
KR20210028093A (ko) * 2019-08-29 2021-03-11 에이에스엠 아이피 홀딩 비.브이. 유전체 층을 포함하는 구조체 및 이를 형성하는 방법
WO2022187247A1 (en) * 2021-03-02 2022-09-09 Versum Materials Us, Llc Selective deposition of silicon dielectric film

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US5872401A (en) 1996-02-29 1999-02-16 Intel Corporation Deposition of an inter layer dielectric formed on semiconductor wafer by sub atmospheric CVD
US6211096B1 (en) 1997-03-21 2001-04-03 Lsi Logic Corporation Tunable dielectric constant oxide and method of manufacture
US6077764A (en) 1997-04-21 2000-06-20 Applied Materials, Inc. Process for depositing high deposition rate halogen-doped silicon oxide layer
GB9801359D0 (en) 1998-01-23 1998-03-18 Poulton Limited Methods and apparatus for treating a substrate
US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6627532B1 (en) 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6068884A (en) 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
US6147009A (en) 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
US6251770B1 (en) 1999-06-30 2001-06-26 Lam Research Corp. Dual-damascene dielectric structures and methods for making the same
DE69940114D1 (de) 1999-08-17 2009-01-29 Applied Materials Inc Oberflächenbehandlung von kohlenstoffdotierten SiO2-Filmen zur Erhöhung der Stabilität während der O2-Veraschung
US6159845A (en) 1999-09-11 2000-12-12 United Microelectronics Corp. Method for manufacturing dielectric layer
US6350670B1 (en) 1999-12-17 2002-02-26 Intel Corporation Method for making a semiconductor device having a carbon doped oxide insulating layer
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US6362091B1 (en) 2000-03-14 2002-03-26 Intel Corporation Method for making a semiconductor device having a low-k dielectric layer
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US6887780B2 (en) 2001-08-31 2005-05-03 Intel Corporation Concentration graded carbon doped oxide

Also Published As

Publication number Publication date
MY122888A (en) 2006-05-31
DE60210337T2 (de) 2006-12-14
TWI297738B (en) 2008-06-11
DE60210337D1 (de) 2006-05-18
US20040043555A1 (en) 2004-03-04
EP1432843B1 (de) 2006-03-29
CN1723295A (zh) 2006-01-18
US20030077921A1 (en) 2003-04-24
WO2003031676A1 (en) 2003-04-17
EP1432843A1 (de) 2004-06-30
US6677253B2 (en) 2004-01-13

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