ATE514181T1 - Verfahren zur ausbildung eines dielektrischen films - Google Patents

Verfahren zur ausbildung eines dielektrischen films

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Publication number
ATE514181T1
ATE514181T1 AT01912316T AT01912316T ATE514181T1 AT E514181 T1 ATE514181 T1 AT E514181T1 AT 01912316 T AT01912316 T AT 01912316T AT 01912316 T AT01912316 T AT 01912316T AT E514181 T1 ATE514181 T1 AT E514181T1
Authority
AT
Austria
Prior art keywords
forming
insulation film
dielectric film
atomic state
film
Prior art date
Application number
AT01912316T
Other languages
English (en)
Inventor
Tadahiro Ohmi
Shigetoshi Sugawa
Original Assignee
Tadahiro Ohmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi filed Critical Tadahiro Ohmi
Application granted granted Critical
Publication of ATE514181T1 publication Critical patent/ATE514181T1/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6318—Formation by simultaneous oxidation and nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT01912316T 2000-03-13 2001-03-13 Verfahren zur ausbildung eines dielektrischen films ATE514181T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000115940 2000-03-13
PCT/JP2001/001966 WO2001069665A1 (en) 2000-03-13 2001-03-13 Method for forming dielectric film

Publications (1)

Publication Number Publication Date
ATE514181T1 true ATE514181T1 (de) 2011-07-15

Family

ID=18627463

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01912316T ATE514181T1 (de) 2000-03-13 2001-03-13 Verfahren zur ausbildung eines dielektrischen films

Country Status (8)

Country Link
US (9) US6551948B2 (de)
EP (3) EP1265279B1 (de)
JP (6) JP4966466B2 (de)
KR (2) KR100833406B1 (de)
AT (1) ATE514181T1 (de)
DE (1) DE60140179D1 (de)
TW (2) TW498544B (de)
WO (2) WO2001069673A1 (de)

Families Citing this family (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW477009B (en) * 1999-05-26 2002-02-21 Tadahiro Ohmi Plasma process device
TW498544B (en) 2000-03-13 2002-08-11 Tadahiro Ohmi Flash memory device, manufacturing and its dielectric film formation
JP4382265B2 (ja) * 2000-07-12 2009-12-09 日本電気株式会社 酸化シリコン膜の形成方法及びその形成装置
JP2002343790A (ja) * 2001-05-21 2002-11-29 Nec Corp 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法
KR100426481B1 (ko) * 2001-06-26 2004-04-13 주식회사 하이닉스반도체 코드 저장 메모리 셀 제조 방법
WO2003015151A1 (fr) * 2001-08-02 2003-02-20 Tokyo Electron Limited Procede de traitement d'un materiau de base et materiau d'utlisation de dispositif electronique
JP3746968B2 (ja) * 2001-08-29 2006-02-22 東京エレクトロン株式会社 絶縁膜の形成方法および形成システム
US6806145B2 (en) * 2001-08-31 2004-10-19 Asm International, N.V. Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
JP4727102B2 (ja) * 2001-09-27 2011-07-20 株式会社アルバック 光学薄膜の成膜方法及び成膜装置
JP2003115587A (ja) * 2001-10-03 2003-04-18 Tadahiro Omi ＜１１０＞方位のシリコン表面上に形成された半導体装置およびその製造方法
US7517751B2 (en) * 2001-12-18 2009-04-14 Tokyo Electron Limited Substrate treating method
US20030124873A1 (en) * 2001-12-28 2003-07-03 Guangcai Xing Method of annealing an oxide film
JP2003282873A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体装置およびその製造方法
KR101153978B1 (ko) 2002-03-26 2012-06-14 카부시키카이샤 시.브이.리서어치 비결정질 금속 산화막의 제조 방법 및 비결정질 금속산화막을 가지는 커패시턴스 소자와 반도체 장치를제조하는 방법
TW200402796A (en) * 2002-03-29 2004-02-16 Tokyo Electron Ltd Forming method of substrate insulation film
TWI225668B (en) * 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
US6831021B2 (en) * 2002-06-12 2004-12-14 Applied Materials, Inc. Plasma method and apparatus for processing a substrate
TWI235433B (en) * 2002-07-17 2005-07-01 Tokyo Electron Ltd Oxide film forming method, oxide film forming apparatus and electronic device material
JP2004095918A (ja) * 2002-08-30 2004-03-25 Fasl Japan Ltd 半導体記憶装置及び半導体装置の製造方法
JP2004153037A (ja) * 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法
JP2004149093A (ja) 2002-11-01 2004-05-27 Pacific Ind Co Ltd タイヤ状態監視装置
TWI333236B (en) * 2002-12-02 2010-11-11 Tadahiro Ohmi Semiconductor device and method of manufacturing the same
JP4320167B2 (ja) * 2002-12-12 2009-08-26 忠弘 大見 半導体素子及びシリコン酸化窒化膜の製造方法
CN100429753C (zh) * 2003-02-06 2008-10-29 东京毅力科创株式会社 等离子体处理方法、半导体基板以及等离子体处理装置
US6822284B2 (en) * 2003-04-16 2004-11-23 Macronix International Co., Ltd. ONO dielectric for memory cells
JP2004356114A (ja) * 2003-05-26 2004-12-16 Tadahiro Omi Ｐチャネルパワーｍｉｓ電界効果トランジスタおよびスイッチング回路
CN1316574C (zh) * 2003-06-11 2007-05-16 旺宏电子股份有限公司 Ono介电质及其制造方法
WO2006033166A1 (ja) * 2004-09-24 2006-03-30 Tadahiro Ohmi 有機ｅｌ発光素子、その製造方法および表示装置
KR100672753B1 (ko) * 2003-07-24 2007-01-22 주식회사 하이닉스반도체 전자트랩을 억제할 수 있는 트렌치형 소자분리막의 형성방법
JP4522916B2 (ja) * 2005-06-27 2010-08-11 東京エレクトロン株式会社 プラズマ窒化処理方法、制御プログラム、コンピュータ記憶媒体およびプラズマ処理装置
US7183143B2 (en) * 2003-10-27 2007-02-27 Macronix International Co., Ltd. Method for forming nitrided tunnel oxide layer
US20060079100A1 (en) * 2004-03-15 2006-04-13 Sharp Laboratories Of America, Inc. High density plasma grown silicon nitride
WO2005093810A1 (ja) * 2004-03-26 2005-10-06 Sekisui Chemical Co., Ltd. 酸窒化膜及び窒化膜の形成方法、形成装置、酸窒化膜、窒化膜、及び基材
US20050214456A1 (en) * 2004-03-29 2005-09-29 Donghul Lu Enhanced dielectric layers using sequential deposition
JP2005303074A (ja) * 2004-04-13 2005-10-27 Renesas Technology Corp 薄膜形成装置および薄膜形成方法
US7163877B2 (en) * 2004-08-18 2007-01-16 Tokyo Electron Limited Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
JP4739215B2 (ja) * 2004-08-31 2011-08-03 東京エレクトロン株式会社 酸化膜の形成方法、制御プログラム、コンピュータ記憶媒体およびプラズマ処理装置
US20060138392A1 (en) * 2004-10-28 2006-06-29 Bowden Ned B Mild methods for generating patterned silicon surfaces
US7915179B2 (en) * 2004-11-04 2011-03-29 Tokyo Electron Limited Insulating film forming method and substrate processing method
US20060113586A1 (en) * 2004-11-29 2006-06-01 Macronix International Co., Ltd. Charge trapping dielectric structure for non-volatile memory
KR100623177B1 (ko) * 2005-01-25 2006-09-13 삼성전자주식회사 높은 유전율을 갖는 유전체 구조물, 이의 제조 방법, 이를포함하는 불휘발성 반도체 메모리 장치 및 그 제조 방법
JPWO2006098300A1 (ja) * 2005-03-16 2008-08-21 株式会社日立国際電気 基板処理方法及び基板処理装置
JP4689324B2 (ja) * 2005-04-04 2011-05-25 東京エレクトロン株式会社 成膜装置、成膜方法および記録媒体
US20060270066A1 (en) * 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
JP4734019B2 (ja) * 2005-04-26 2011-07-27 株式会社東芝 半導体記憶装置及びその製造方法
US7785947B2 (en) * 2005-04-28 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma
JP5052033B2 (ja) * 2005-04-28 2012-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006310601A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 半導体装置およびその製造方法
US7732342B2 (en) * 2005-05-26 2010-06-08 Applied Materials, Inc. Method to increase the compressive stress of PECVD silicon nitride films
US7566655B2 (en) * 2005-05-26 2009-07-28 Applied Materials, Inc. Integration process for fabricating stressed transistor structure
US8129290B2 (en) * 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
US8138104B2 (en) * 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
JP4853857B2 (ja) * 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
KR100648194B1 (ko) * 2005-07-27 2006-11-23 삼성전자주식회사 반도체 장치의 제조 방법
KR100670925B1 (ko) * 2005-08-01 2007-01-19 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US20070087581A1 (en) * 2005-09-09 2007-04-19 Varian Semiconductor Equipment Associates, Inc. Technique for atomic layer deposition
US20070065576A1 (en) * 2005-09-09 2007-03-22 Vikram Singh Technique for atomic layer deposition
JP5283833B2 (ja) * 2005-09-29 2013-09-04 株式会社東芝 半導体装置の製造方法
KR100729354B1 (ko) * 2005-12-07 2007-06-15 삼성전자주식회사 유전막의 전기적 특성 향상을 위한 반도체 소자의 제조방법
EP1818989A3 (de) * 2006-02-10 2010-12-01 Semiconductor Energy Laboratory Co., Ltd. Nichtflüchtiges Halbleiterspeicherelement und Herstellungsverfahren dafür
KR101488516B1 (ko) * 2006-03-21 2015-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 반도체 기억장치
EP1837900A3 (de) * 2006-03-21 2008-10-15 Semiconductor Energy Laboratory Co., Ltd. Nichtflüchtige Halbleiterspeichervorrichtung
TWI416738B (zh) 2006-03-21 2013-11-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
EP1837917A1 (de) 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nichtflüchtige Halbleiterspeichervorrichtung
US8022460B2 (en) * 2006-03-31 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US7554854B2 (en) * 2006-03-31 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for deleting data from NAND type nonvolatile memory
EP1840947A3 (de) * 2006-03-31 2008-08-13 Semiconductor Energy Laboratory Co., Ltd. Nichtflüchtige Halbleiterspeichervorrichtung
US7786526B2 (en) * 2006-03-31 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
CN101454892B (zh) 2006-05-26 2011-12-14 株式会社半导体能源研究所 半导体器件及其制造方法
US20100024732A1 (en) * 2006-06-02 2010-02-04 Nima Mokhlesi Systems for Flash Heating in Atomic Layer Deposition
US20070277735A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070281082A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
US20070281105A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
JP4764267B2 (ja) * 2006-06-27 2011-08-31 株式会社東芝 半導体装置およびその製造方法
KR100904729B1 (ko) * 2006-06-30 2009-06-26 주식회사 하이닉스반도체 반도체소자의 듀얼 게이트 형성방법
JP5305620B2 (ja) * 2006-07-14 2013-10-02 株式会社半導体エネルギー研究所 不揮発性メモリ
US8344347B2 (en) * 2006-12-15 2013-01-01 Macronix International Co., Ltd. Multi-layer electrode structure
US7687359B2 (en) * 2006-12-22 2010-03-30 Dongbu Hitek Co., Ltd. Method for fabricating flash memory device
JP4861204B2 (ja) * 2007-01-22 2012-01-25 株式会社東芝 半導体装置およびその製造方法
WO2008123289A1 (ja) * 2007-03-26 2008-10-16 Tokyo Electron Limited 窒化珪素膜および不揮発性半導体メモリ装置
JP2008270706A (ja) * 2007-03-26 2008-11-06 Tokyo Electron Ltd 窒化珪素膜および不揮発性半導体メモリ装置
JP5138261B2 (ja) 2007-03-30 2013-02-06 東京エレクトロン株式会社 シリコン酸化膜の形成方法、プラズマ処理装置および記憶媒体
JP4562751B2 (ja) * 2007-05-28 2010-10-13 東京エレクトロン株式会社 絶縁膜の形成方法
JP4963679B2 (ja) * 2007-05-29 2012-06-27 キヤノン株式会社 液体吐出ヘッド用基体及びその製造方法、並びに該基体を用いる液体吐出ヘッド
JP5408930B2 (ja) * 2007-08-31 2014-02-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2188413B1 (de) * 2007-09-07 2018-07-11 Fujifilm Manufacturing Europe B.V. Verfahren zur atomlagenabscheidung unter verwendung eines atmosphärendruck-glimmentladungsplasmas
KR100933835B1 (ko) * 2007-11-12 2009-12-24 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법
US7687338B2 (en) * 2007-12-05 2010-03-30 International Business Machines Corporation Method of reducing embedded SiGe loss in semiconductor device manufacturing
JP4611414B2 (ja) 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5374749B2 (ja) * 2008-02-08 2013-12-25 東京エレクトロン株式会社 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
WO2009099254A1 (ja) 2008-02-08 2009-08-13 Tokyo Electron Limited 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
JP5374748B2 (ja) * 2008-02-08 2013-12-25 東京エレクトロン株式会社 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
WO2009099252A1 (ja) * 2008-02-08 2009-08-13 Tokyo Electron Limited 絶縁膜のプラズマ改質処理方法
KR100950477B1 (ko) * 2008-03-05 2010-03-31 주식회사 하이닉스반도체 전하 트랩층을 갖는 불휘발성 메모리소자의 제조방법
US20100089315A1 (en) 2008-09-22 2010-04-15 Applied Materials, Inc. Shutter disk for physical vapor deposition chamber
US8807075B2 (en) * 2008-09-22 2014-08-19 Applied Materials, Inc. Shutter disk having a tuned coefficient of thermal expansion
US8524616B2 (en) * 2008-11-12 2013-09-03 Microchip Technology Incorporated Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control
US8236706B2 (en) * 2008-12-12 2012-08-07 Mattson Technology, Inc. Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures
CN103270578B (zh) * 2010-12-30 2016-10-26 应用材料公司 使用微波等离子体的薄膜沉积
JP5663384B2 (ja) * 2011-04-19 2015-02-04 三菱電機株式会社 絶縁膜の製造方法
FR2978867B1 (fr) * 2011-08-01 2014-03-21 St Microelectronics Rousset Resistance ajustable
KR101361673B1 (ko) 2011-10-07 2014-02-12 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 기록 매체
US8741785B2 (en) 2011-10-27 2014-06-03 Applied Materials, Inc. Remote plasma radical treatment of silicon oxide
US8664729B2 (en) * 2011-12-14 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for reduced gate resistance finFET
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
WO2015134398A1 (en) 2014-03-02 2015-09-11 Tokyo Electron Limited METHOD OF ENHANCING HIGH-k FILM NUCLEATION RATE AND ELECTRICAL MOBILITY IN A SEMICONDUCTOR DEVICE BY MICROWAVE PLASMA TREATMENT
CN104952734B (zh) * 2015-07-16 2020-01-24 矽力杰半导体技术(杭州)有限公司 半导体结构及其制造方法
JP6742165B2 (ja) * 2016-06-14 2020-08-19 東京エレクトロン株式会社 窒化珪素膜の処理方法および窒化珪素膜の形成方法
JP6419762B2 (ja) * 2016-09-06 2018-11-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR102734647B1 (ko) 2016-09-23 2024-11-28 삼성전자주식회사 반도체 장치의 제조 방법
US9991363B1 (en) * 2017-07-24 2018-06-05 Globalfoundries Inc. Contact etch stop layer with sacrificial polysilicon layer
US10276697B1 (en) * 2017-10-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance FET with improved reliability performance
JP6839672B2 (ja) 2018-02-06 2021-03-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
DE102020120420A1 (de) 2020-08-03 2022-02-03 VON ARDENNE Asset GmbH & Co. KG Verfahren
KR102731905B1 (ko) * 2023-11-30 2024-11-20 주성엔지니어링(주) 박막 형성 방법 및 이를 이용하여 제조되는 트랜지스터 및 커패시터

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US44187A (en) * 1864-09-13 Machine for cutting lacings
JPS5684462A (en) * 1979-12-10 1981-07-09 Shunpei Yamazaki Plasma nitriding method
JPS59105371A (ja) * 1982-12-08 1984-06-18 Hitachi Ltd 不揮撥性半導体装置
JPS61183459A (ja) * 1985-02-07 1986-08-16 Hitachi Ltd 保護膜の形成方法
JPS6251264A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 薄膜トランジスタの製造方法
JPS62254432A (ja) * 1986-04-28 1987-11-06 Toshiba Corp 表面処理方法及び装置
JP2821138B2 (ja) * 1988-05-27 1998-11-05 株式会社日立製作所 薄膜形成方法及びその装置
US5304829A (en) 1989-01-17 1994-04-19 Kabushiki Kaisha Toshiba Nonvolatile semiconductor device
US5068124A (en) * 1989-11-17 1991-11-26 International Business Machines Corporation Method for depositing high quality silicon dioxide by pecvd
JP3029434B2 (ja) * 1989-12-29 2000-04-04 正俊 右高 絶縁膜の製造方法及びこの絶縁膜を使用する半導体装置の製造方法
JPH03229871A (ja) * 1990-02-01 1991-10-11 Toagosei Chem Ind Co Ltd 絶縁膜の製造方法及びこの絶縁膜を使用する半導体装置の製造方法
JPH0492423A (ja) 1990-08-08 1992-03-25 Hitachi Ltd 半導体集積回路装置の製造方法
US5268320A (en) * 1990-12-26 1993-12-07 Intel Corporation Method of increasing the accuracy of an analog circuit employing floating gate memory devices
JP2764472B2 (ja) * 1991-03-25 1998-06-11 東京エレクトロン株式会社 半導体の成膜方法
JPH053319A (ja) * 1991-06-25 1993-01-08 Canon Inc 薄膜半導体装置及びその製造方法
JPH05267684A (ja) * 1992-03-18 1993-10-15 Rohm Co Ltd 不揮発性記憶素子
JP3295133B2 (ja) * 1992-07-30 2002-06-24 シャープ株式会社 非晶質半導体の製造方法
EP0600303B1 (de) * 1992-12-01 2002-02-06 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung einer elektrischen Dünnschicht
JPH06192827A (ja) * 1992-12-28 1994-07-12 Canon Inc 堆積膜及びその形成方法
JP2786071B2 (ja) * 1993-02-17 1998-08-13 日本電気株式会社 半導体装置の製造方法
JPH0714803A (ja) * 1993-06-24 1995-01-17 Kawasaki Steel Corp Ａｌ薄膜の形成方法
JP2640910B2 (ja) * 1993-07-14 1997-08-13 株式会社フロンテック 電子素子およびその製造方法
JP3413276B2 (ja) * 1994-04-20 2003-06-03 東京エレクトロン株式会社 薄膜の形成方法
JPH0851164A (ja) * 1994-08-08 1996-02-20 Matsushita Electron Corp 不揮発性半導体記憶装置およびその製造方法
JPH08115912A (ja) * 1994-10-14 1996-05-07 Nippon Telegr & Teleph Corp <Ntt> 窒化ケイ素薄膜の作製方法
JP3586332B2 (ja) * 1995-02-28 2004-11-10 新日本製鐵株式会社 不揮発性半導体記憶装置及びその製造方法
US5707888A (en) * 1995-05-04 1998-01-13 Lsi Logic Corporation Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation
JPH0955351A (ja) * 1995-08-15 1997-02-25 Sony Corp 半導体装置の製造方法
JPH0964307A (ja) * 1995-08-29 1997-03-07 Hitachi Ltd 酸化物薄膜の熱処理方法
US5891809A (en) 1995-09-29 1999-04-06 Intel Corporation Manufacturable dielectric formed using multiple oxidation and anneal steps
JPH09172081A (ja) * 1995-12-19 1997-06-30 Sony Corp 半導体装置の製造方法
JPH09205155A (ja) * 1996-01-25 1997-08-05 Sony Corp 半導体記憶装置の製造方法
JP3802945B2 (ja) * 1996-02-01 2006-08-02 株式会社ルネサステクノロジ 不揮発性半導体記憶装置の製造方法
JPH09223752A (ja) * 1996-02-16 1997-08-26 Hitachi Ltd 不揮発性半導体記憶装置の製造方法
US6110842A (en) 1996-06-07 2000-08-29 Texas Instruments Incorporated Method of forming multiple gate oxide thicknesses using high density plasma nitridation
JPH1060655A (ja) * 1996-08-22 1998-03-03 Canon Inc 薄膜形成方法および装置
US5939763A (en) 1996-09-05 1999-08-17 Advanced Micro Devices, Inc. Ultrathin oxynitride structure and process for VLSI applications
JPH1098038A (ja) * 1996-09-19 1998-04-14 Sony Corp 半導体装置におけるシリコン酸化膜の形成方法
KR100282413B1 (ko) * 1996-10-24 2001-03-02 김영환 아산화질소 가스를 이용한 박막 형성 방법
GB2319533B (en) * 1996-11-22 2001-06-06 Trikon Equip Ltd Methods of forming a barrier layer
JPH10237662A (ja) * 1996-12-24 1998-09-08 Sony Corp 金属膜のプラズマｃｖｄ方法、および金属窒化物膜の形成方法ならびに半導体装置
US6357385B1 (en) 1997-01-29 2002-03-19 Tadahiro Ohmi Plasma device
US6287988B1 (en) * 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
US6461984B1 (en) * 1997-03-18 2002-10-08 Korea Advanced Institute Of Science & Technology Semiconductor device using N2O plasma oxide and a method of fabricating the same
JP3191745B2 (ja) * 1997-04-23 2001-07-23 日本電気株式会社 薄膜トランジスタ素子及びその製造方法
US6040216A (en) 1997-08-11 2000-03-21 Mosel Vitelic, Inc. Method (and device) for producing tunnel silicon oxynitride layer
JPH11162970A (ja) * 1997-11-25 1999-06-18 Sony Corp 酸化膜の形成方法
JP3838397B2 (ja) * 1997-12-02 2006-10-25 忠弘 大見 半導体製造方法
JPH11204517A (ja) * 1998-01-12 1999-07-30 Sony Corp シリコン酸化膜の形成方法、及びシリコン酸化膜形成装置
JPH11219950A (ja) * 1998-02-03 1999-08-10 Hitachi Ltd 半導体集積回路の製造方法並びにその製造装置
JPH11279773A (ja) * 1998-03-27 1999-10-12 Tomoo Ueno 成膜方法
JPH11340321A (ja) * 1998-05-27 1999-12-10 Sony Corp 半導体装置およびその製造方法
US20020009861A1 (en) * 1998-06-12 2002-01-24 Pravin K. Narwankar Method and apparatus for the formation of dielectric layers
US6727148B1 (en) * 1998-06-30 2004-04-27 Lam Research Corporation ULSI MOS with high dielectric constant gate insulator
JP3513018B2 (ja) * 1998-06-30 2004-03-31 株式会社東芝 半導体装置及びその製造方法
JP3837934B2 (ja) * 1998-09-16 2006-10-25 セイコーエプソン株式会社 半導体装置の製造方法
JP3837938B2 (ja) * 1998-09-28 2006-10-25 セイコーエプソン株式会社 薄膜半導体装置の製造方法
JP4135236B2 (ja) * 1998-11-19 2008-08-20 ソニー株式会社 Ｃｖｄ膜の成膜方法
JP2000223439A (ja) * 1999-01-27 2000-08-11 Sony Corp 半導体装置及びその製造方法
KR100745495B1 (ko) * 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 반도체 제조방법 및 반도체 제조장치
JP4119029B2 (ja) * 1999-03-10 2008-07-16 東京エレクトロン株式会社 半導体装置の製造方法
JP3326718B2 (ja) * 1999-03-19 2002-09-24 富士通株式会社 半導体装置の製造方法
JP3736189B2 (ja) * 1999-03-30 2006-01-18 セイコーエプソン株式会社 ＳｉＯ２膜の形成方法、薄膜トランジスタデバイスの製造方法、及び液晶表示装置
JP2000332009A (ja) * 1999-05-25 2000-11-30 Sony Corp 絶縁膜の形成方法及びｐ形半導体素子の製造方法
JP2001015507A (ja) * 1999-06-30 2001-01-19 Toshiba Corp シリコン酸化窒化膜の形成方法
JP2001044375A (ja) 1999-07-29 2001-02-16 Fujitsu Ltd 半導体装置およびその製造方法
US6380033B1 (en) * 1999-09-20 2002-04-30 Advanced Micro Devices, Inc. Process to improve read disturb for NAND flash memory devices
US6337289B1 (en) * 1999-09-24 2002-01-08 Applied Materials. Inc Method and apparatus for integrating a metal nitride film in a semiconductor device
KR20010066386A (ko) 1999-12-31 2001-07-11 박종섭 플래시 메모리의 게이트전극 제조방법
US6297103B1 (en) 2000-02-28 2001-10-02 Micron Technology, Inc. Structure and method for dual gate oxide thicknesses
TW498544B (en) * 2000-03-13 2002-08-11 Tadahiro Ohmi Flash memory device, manufacturing and its dielectric film formation
JP4056195B2 (ja) * 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法

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KR100760078B1 (ko) 2007-09-18
US20030148629A1 (en) 2003-08-07
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KR20020086638A (ko) 2002-11-18
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