ATE322081T1 - Kupferabscheidungsverfahren - Google Patents

Kupferabscheidungsverfahren

Info

Publication number
ATE322081T1
ATE322081T1 AT00952664T AT00952664T ATE322081T1 AT E322081 T1 ATE322081 T1 AT E322081T1 AT 00952664 T AT00952664 T AT 00952664T AT 00952664 T AT00952664 T AT 00952664T AT E322081 T1 ATE322081 T1 AT E322081T1
Authority
AT
Austria
Prior art keywords
copper
exposed surface
liquid ammonia
onto
workpiece
Prior art date
Application number
AT00952664T
Other languages
English (en)
Inventor
Gary W Ferrell
Original Assignee
Sez Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sez Ag filed Critical Sez Ag
Application granted granted Critical
Publication of ATE322081T1 publication Critical patent/ATE322081T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/1658—Process features with two steps starting with metal deposition followed by addition of reducing agent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacture And Refinement Of Metals (AREA)
AT00952664T 1999-08-09 2000-08-08 Kupferabscheidungsverfahren ATE322081T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/371,296 US6180524B1 (en) 1999-08-09 1999-08-09 Metal deposit process

Publications (1)

Publication Number Publication Date
ATE322081T1 true ATE322081T1 (de) 2006-04-15

Family

ID=23463374

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00952664T ATE322081T1 (de) 1999-08-09 2000-08-08 Kupferabscheidungsverfahren

Country Status (10)

Country Link
US (2) US6180524B1 (de)
EP (1) EP1214739B1 (de)
JP (1) JP4416978B2 (de)
KR (1) KR100641891B1 (de)
CN (1) CN1168125C (de)
AT (1) ATE322081T1 (de)
AU (1) AU6532100A (de)
CA (1) CA2381503A1 (de)
DE (1) DE60027014T2 (de)
WO (1) WO2001011098A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180524B1 (en) * 1999-08-09 2001-01-30 Gary W. Ferrell Metal deposit process
KR100671610B1 (ko) * 2000-10-26 2007-01-18 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
US6573183B2 (en) 2001-09-28 2003-06-03 Agere Systems Inc. Method and apparatus for controlling contamination during the electroplating deposition of metals onto a semiconductor wafer surface
US6677233B2 (en) 2002-01-02 2004-01-13 Intel Corporation Material deposition from a liquefied gas solution
US6660633B1 (en) * 2002-02-26 2003-12-09 Advanced Micro Devices, Inc. Method of reducing electromigration in a copper line by electroplating an interim copper-zinc alloy thin film on a copper surface and a semiconductor device thereby formed
US7164134B2 (en) * 2003-08-01 2007-01-16 General Electric Company High performance CT reflector for a scintillator array and method for making same
WO2008058250A1 (en) * 2006-11-08 2008-05-15 Surfect Technologies, Inc. System and method for controlling an electroless deposition process
KR200453687Y1 (ko) * 2011-02-07 2011-05-23 이동혁 휴대용 부탄가스 용기용 온열기
CN113966090B (zh) * 2021-10-27 2024-01-23 中国联合网络通信集团有限公司 沉铜厚度控制方法、装置、生产系统、设备及介质

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054340A (de) * 1900-01-01
GB1043233A (en) * 1962-03-30 1966-09-21 Gen Electric Co Ltd Improvements in or relating to the formation of a metal layer on an electrically non-conducting support
US4135988A (en) * 1978-01-30 1979-01-23 General Dynamics Corporation One hundred percent pattern plating of plated through-hole circuit boards
US4908242A (en) * 1986-10-31 1990-03-13 Kollmorgen Corporation Method of consistently producing a copper deposit on a substrate by electroless deposition which deposit is essentially free of fissures
US5077136A (en) * 1989-09-13 1991-12-31 Digital Equipment Corp. Diffusion barrier for solvents and inorganic cations on polyimide surfaces by ammonia treatment
US5750018A (en) * 1997-03-18 1998-05-12 Learonal, Inc. Cyanide-free monovalent copper electroplating solutions
JPH11181593A (ja) * 1997-12-16 1999-07-06 Totoku Electric Co Ltd 銅被覆アルミニウム線の製造方法
US6197181B1 (en) * 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
SG93856A1 (en) * 1999-07-19 2003-01-21 Chartered Semiconductor Mfg A selective & damage free cu cleaning process for pre-dep, post etch/cmp
US6180524B1 (en) * 1999-08-09 2001-01-30 Gary W. Ferrell Metal deposit process

Also Published As

Publication number Publication date
CN1168125C (zh) 2004-09-22
CA2381503A1 (en) 2001-02-15
US20010019888A1 (en) 2001-09-06
CN1382306A (zh) 2002-11-27
WO2001011098A2 (en) 2001-02-15
EP1214739B1 (de) 2006-03-29
AU6532100A (en) 2001-03-05
JP4416978B2 (ja) 2010-02-17
EP1214739A4 (de) 2005-04-13
KR100641891B1 (ko) 2006-11-03
US6180524B1 (en) 2001-01-30
KR20020038723A (ko) 2002-05-23
DE60027014D1 (de) 2006-05-18
WO2001011098A3 (en) 2001-09-13
US7078340B2 (en) 2006-07-18
DE60027014T2 (de) 2007-03-29
JP2003511552A (ja) 2003-03-25
EP1214739A2 (de) 2002-06-19

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