ATE336028T1 - Lithografieverfahren durch pressen eines substrats in einem nanoimprint-prozess - Google Patents

Lithografieverfahren durch pressen eines substrats in einem nanoimprint-prozess

Info

Publication number
ATE336028T1
ATE336028T1 AT03799684T AT03799684T ATE336028T1 AT E336028 T1 ATE336028 T1 AT E336028T1 AT 03799684 T AT03799684 T AT 03799684T AT 03799684 T AT03799684 T AT 03799684T AT E336028 T1 ATE336028 T1 AT E336028T1
Authority
AT
Austria
Prior art keywords
layer
stage
sub
substrate
pressing
Prior art date
Application number
AT03799684T
Other languages
English (en)
Inventor
Corinne Perret
Cecile Gourgon
Stephan Landis
Original Assignee
Commissariat Energie Atomique
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Centre Nat Rech Scient filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE336028T1 publication Critical patent/ATE336028T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Printing Methods (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
AT03799684T 2002-12-23 2003-12-22 Lithografieverfahren durch pressen eines substrats in einem nanoimprint-prozess ATE336028T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0216540A FR2849221B1 (fr) 2002-12-23 2002-12-23 Procede de lithographie par pressage d'un substrat mettant en oeuvre une nano-impression

Publications (1)

Publication Number Publication Date
ATE336028T1 true ATE336028T1 (de) 2006-09-15

Family

ID=32406416

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03799684T ATE336028T1 (de) 2002-12-23 2003-12-22 Lithografieverfahren durch pressen eines substrats in einem nanoimprint-prozess

Country Status (6)

Country Link
US (1) US7682515B2 (de)
EP (1) EP1576420B8 (de)
AT (1) ATE336028T1 (de)
DE (1) DE60307516T2 (de)
FR (1) FR2849221B1 (de)
WO (1) WO2004059386A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7435074B2 (en) * 2004-03-13 2008-10-14 International Business Machines Corporation Method for fabricating dual damascence structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascence patterning
FR2869601B1 (fr) * 2004-04-28 2006-06-09 Commissariat Energie Atomique Moule pour la nano-impression, procede de fabrication d'un tel moule et utilisation d'un tel moule
JP2005313278A (ja) * 2004-04-28 2005-11-10 Nikon Corp 形状転写方法
US7876283B2 (en) 2005-12-15 2011-01-25 Stmicroelectronics S.A. Antenna having a dielectric structure for a simplified fabrication process
JP4872373B2 (ja) * 2006-02-15 2012-02-08 株式会社日立製作所 部位選択的に修飾された微細構造体およびその製造方法
JP5337114B2 (ja) * 2010-07-30 2013-11-06 株式会社東芝 パタン形成方法
US10310374B2 (en) 2016-08-18 2019-06-04 International Business Machines Corporation Repatternable nanoimprint lithography stamp
FR3060422B1 (fr) 2016-12-16 2019-05-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fonctionnalisation d'un substrat
US10811320B2 (en) * 2017-09-29 2020-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Footing removal in cut-metal process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US6680214B1 (en) * 1998-06-08 2004-01-20 Borealis Technical Limited Artificial band gap
US6713238B1 (en) * 1998-10-09 2004-03-30 Stephen Y. Chou Microscale patterning and articles formed thereby
SE516194C2 (sv) * 2000-04-18 2001-12-03 Obducat Ab Substrat för samt process vid tillverkning av strukturer
US6955767B2 (en) * 2001-03-22 2005-10-18 Hewlett-Packard Development Company, Lp. Scanning probe based lithographic alignment

Also Published As

Publication number Publication date
FR2849221B1 (fr) 2005-10-07
EP1576420B8 (de) 2006-10-04
DE60307516T2 (de) 2007-01-04
DE60307516D1 (de) 2006-09-21
EP1576420B1 (de) 2006-08-09
US20060183060A1 (en) 2006-08-17
FR2849221A1 (fr) 2004-06-25
US7682515B2 (en) 2010-03-23
EP1576420A1 (de) 2005-09-21
WO2004059386A1 (fr) 2004-07-15

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties