ATE339007T1 - Hochkompakter nichtflüchtiger speicher mit platz sparenden datenregistern und dessen betriebsverfahren - Google Patents

Hochkompakter nichtflüchtiger speicher mit platz sparenden datenregistern und dessen betriebsverfahren

Info

Publication number
ATE339007T1
ATE339007T1 AT03754648T AT03754648T ATE339007T1 AT E339007 T1 ATE339007 T1 AT E339007T1 AT 03754648 T AT03754648 T AT 03754648T AT 03754648 T AT03754648 T AT 03754648T AT E339007 T1 ATE339007 T1 AT E339007T1
Authority
AT
Austria
Prior art keywords
volatile memory
link modules
space
operating method
data registers
Prior art date
Application number
AT03754648T
Other languages
English (en)
Inventor
Raul-Adrian Cernea
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE339007T1 publication Critical patent/ATE339007T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1036—Read-write modes for single port memories, i.e. having either a random port or a serial port using data shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Non-Volatile Memory (AREA)
AT03754648T 2002-09-24 2003-09-17 Hochkompakter nichtflüchtiger speicher mit platz sparenden datenregistern und dessen betriebsverfahren ATE339007T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/254,221 US6940753B2 (en) 2002-09-24 2002-09-24 Highly compact non-volatile memory and method therefor with space-efficient data registers

Publications (1)

Publication Number Publication Date
ATE339007T1 true ATE339007T1 (de) 2006-09-15

Family

ID=31993300

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03754648T ATE339007T1 (de) 2002-09-24 2003-09-17 Hochkompakter nichtflüchtiger speicher mit platz sparenden datenregistern und dessen betriebsverfahren

Country Status (10)

Country Link
US (1) US6940753B2 (de)
EP (1) EP1543523B1 (de)
JP (1) JP4336652B2 (de)
KR (1) KR101030681B1 (de)
CN (1) CN100490000C (de)
AT (1) ATE339007T1 (de)
AU (1) AU2003272467A1 (de)
DE (1) DE60308202T2 (de)
TW (1) TWI310190B (de)
WO (1) WO2004029977A1 (de)

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US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7849381B2 (en) 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
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US7447078B2 (en) * 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
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US7307887B2 (en) * 2005-12-29 2007-12-11 Sandisk Corporation Continued verification in non-volatile memory write operations
US7616506B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7616505B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US8331133B2 (en) * 2009-06-26 2012-12-11 Intel Corporation Apparatuses for register file with novel bit cell implementation
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CN105122227B (zh) * 2013-05-29 2018-10-23 桑迪士克科技有限责任公司 用于nand存储器系统的高性能系统拓补
DE102014218131A1 (de) 2014-09-10 2016-03-10 Bayerische Motoren Werke Aktiengesellschaft Messsystem zur Batteriezustandsbestimmung
CN104485930B (zh) * 2014-12-23 2017-06-16 苏州宽温电子科技有限公司 一种高效时钟输入控制电路
US10254967B2 (en) 2016-01-13 2019-04-09 Sandisk Technologies Llc Data path control for non-volatile memory
US10528286B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Interface for non-volatile memory
US10528267B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Command queue for storage operations
US10528255B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Interface for non-volatile memory
US10114589B2 (en) * 2016-11-16 2018-10-30 Sandisk Technologies Llc Command control for multi-core non-volatile memory
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Also Published As

Publication number Publication date
JP4336652B2 (ja) 2009-09-30
KR20050084585A (ko) 2005-08-26
DE60308202D1 (de) 2006-10-19
CN1698132A (zh) 2005-11-16
TW200409125A (en) 2004-06-01
JP2006500730A (ja) 2006-01-05
AU2003272467A1 (en) 2004-04-19
EP1543523B1 (de) 2006-09-06
US6940753B2 (en) 2005-09-06
KR101030681B1 (ko) 2011-04-22
CN100490000C (zh) 2009-05-20
US20040057282A1 (en) 2004-03-25
DE60308202T2 (de) 2007-06-14
EP1543523A1 (de) 2005-06-22
TWI310190B (en) 2009-05-21
WO2004029977A1 (en) 2004-04-08

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