ATE343868T1 - Kompensationsschaltung und verfahren für einen leistungstransistor - Google Patents

Kompensationsschaltung und verfahren für einen leistungstransistor

Info

Publication number
ATE343868T1
ATE343868T1 AT00967260T AT00967260T ATE343868T1 AT E343868 T1 ATE343868 T1 AT E343868T1 AT 00967260 T AT00967260 T AT 00967260T AT 00967260 T AT00967260 T AT 00967260T AT E343868 T1 ATE343868 T1 AT E343868T1
Authority
AT
Austria
Prior art keywords
transistor
power transistor
correction
operating characteristics
power
Prior art date
Application number
AT00967260T
Other languages
English (en)
Inventor
Cynthia Blair
Henrik Sjoden
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of ATE343868T1 publication Critical patent/ATE343868T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/15—Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/456—A scaled replica of a transistor being present in an amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
AT00967260T 1999-10-08 2000-10-03 Kompensationsschaltung und verfahren für einen leistungstransistor ATE343868T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/415,524 US6304129B1 (en) 1999-10-08 1999-10-08 Compensation circuit and method for a power transistor

Publications (1)

Publication Number Publication Date
ATE343868T1 true ATE343868T1 (de) 2006-11-15

Family

ID=23646044

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00967260T ATE343868T1 (de) 1999-10-08 2000-10-03 Kompensationsschaltung und verfahren für einen leistungstransistor

Country Status (9)

Country Link
US (1) US6304129B1 (de)
EP (1) EP1224732B1 (de)
JP (1) JP2003511945A (de)
CN (1) CN1258870C (de)
AT (1) ATE343868T1 (de)
AU (1) AU7748400A (de)
DE (1) DE60031561T2 (de)
TW (1) TW478244B (de)
WO (1) WO2001028086A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0103082D0 (en) * 2001-02-08 2001-03-28 Pace Micro Tech Plc Self compensating amplifier and driver
US6893101B2 (en) 2001-07-27 2005-05-17 Telefonaktiebolaget L.M. Ericsson Active element bias circuit for RF power transistor input
JP4075505B2 (ja) * 2001-09-10 2008-04-16 セイコーエプソン株式会社 電子回路、電子装置、及び電子機器
US7422366B1 (en) * 2004-09-10 2008-09-09 National Semiconductor Corporation Current mirror methodology quantifying time dependent thermal instability accurately in SOI BJT circuitry
JP2006311507A (ja) * 2005-03-28 2006-11-09 Matsushita Electric Ind Co Ltd 電源スイッチ回路
EP1950883A1 (de) * 2007-01-25 2008-07-30 Research In Motion Limited System und Verfahren zur Filterung von Harmonischen eines Leistungsverstärkers
US7724084B2 (en) 2007-01-25 2010-05-25 Research In Motion Limited System and method for controlling radio frequency transmissions from an electronic device
US9041369B2 (en) * 2012-08-24 2015-05-26 Sandisk Technologies Inc. Method and apparatus for optimizing linear regulator transient performance
CN103957009B (zh) * 2014-04-29 2017-01-25 电子科技大学 一种对压缩采样系统低通滤波器进行补偿的方法
KR101977783B1 (ko) * 2017-10-17 2019-05-13 주식회사 케이엠더블유 전력 증폭기 성능 보정 방법 및 그를 위한 장치
US12374991B2 (en) * 2022-09-01 2025-07-29 Navitas Semiconductor Limited Systems and methods for improving radiated EMI in switching power supplies

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214315A (en) * 1991-04-23 1993-05-25 Cornell Research Foundation, Inc. Nanosecond RF switch driver
US5164679A (en) 1992-01-08 1992-11-17 Harris Corporation AC power amplifier having current limit control
US5281925A (en) * 1992-11-17 1994-01-25 Acrodyne Industries, Inc. RF amplifier providing reduced drive response rise times and fall times
JP3365428B2 (ja) 1992-12-09 2003-01-14 ソニー株式会社 高周波パワーアンプのバイアス制御回路
JPH06334445A (ja) 1993-05-19 1994-12-02 Mitsubishi Electric Corp 半導体集積回路
US6049704A (en) * 1997-12-10 2000-04-11 Motorola, Inc. Apparatus for amplifying an RF signal
US6091279A (en) * 1998-04-13 2000-07-18 Lucent Technologies, Inc. Temperature compensation of LDMOS devices

Also Published As

Publication number Publication date
CN1409893A (zh) 2003-04-09
US6304129B1 (en) 2001-10-16
EP1224732B1 (de) 2006-10-25
CN1258870C (zh) 2006-06-07
EP1224732A1 (de) 2002-07-24
AU7748400A (en) 2001-04-23
WO2001028086A1 (en) 2001-04-19
JP2003511945A (ja) 2003-03-25
TW478244B (en) 2002-03-01
DE60031561D1 (de) 2006-12-07
DE60031561T2 (de) 2007-09-13

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties