TW478244B - Compensation circuit and method for a power transistor - Google Patents

Compensation circuit and method for a power transistor Download PDF

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Publication number
TW478244B
TW478244B TW089120775A TW89120775A TW478244B TW 478244 B TW478244 B TW 478244B TW 089120775 A TW089120775 A TW 089120775A TW 89120775 A TW89120775 A TW 89120775A TW 478244 B TW478244 B TW 478244B
Authority
TW
Taiwan
Prior art keywords
transistor
patent application
power transistor
correction
scope
Prior art date
Application number
TW089120775A
Other languages
English (en)
Chinese (zh)
Inventor
Cynthia Blair
Henrik Sjoden
Original Assignee
Ericsson Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Inc filed Critical Ericsson Inc
Application granted granted Critical
Publication of TW478244B publication Critical patent/TW478244B/zh

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191Tuned amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/15Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/18Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/456A scaled replica of a transistor being present in an amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
TW089120775A 1999-10-08 2000-11-01 Compensation circuit and method for a power transistor TW478244B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/415,524 US6304129B1 (en) 1999-10-08 1999-10-08 Compensation circuit and method for a power transistor

Publications (1)

Publication Number Publication Date
TW478244B true TW478244B (en) 2002-03-01

Family

ID=23646044

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089120775A TW478244B (en) 1999-10-08 2000-11-01 Compensation circuit and method for a power transistor

Country Status (9)

Country Link
US (1) US6304129B1 (de)
EP (1) EP1224732B1 (de)
JP (1) JP2003511945A (de)
CN (1) CN1258870C (de)
AT (1) ATE343868T1 (de)
AU (1) AU7748400A (de)
DE (1) DE60031561T2 (de)
TW (1) TW478244B (de)
WO (1) WO2001028086A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0103082D0 (en) * 2001-02-08 2001-03-28 Pace Micro Tech Plc Self compensating amplifier and driver
US6893101B2 (en) 2001-07-27 2005-05-17 Telefonaktiebolaget L.M. Ericsson Active element bias circuit for RF power transistor input
JP4075505B2 (ja) * 2001-09-10 2008-04-16 セイコーエプソン株式会社 電子回路、電子装置、及び電子機器
US7422366B1 (en) * 2004-09-10 2008-09-09 National Semiconductor Corporation Current mirror methodology quantifying time dependent thermal instability accurately in SOI BJT circuitry
JP2006311507A (ja) * 2005-03-28 2006-11-09 Matsushita Electric Ind Co Ltd 電源スイッチ回路
US7724084B2 (en) 2007-01-25 2010-05-25 Research In Motion Limited System and method for controlling radio frequency transmissions from an electronic device
EP2161835B1 (de) * 2007-01-25 2013-08-14 Research In Motion Limited System und Verfahren zur Filterung von Harmonischen eines Leistungsverstärkers
US9041369B2 (en) * 2012-08-24 2015-05-26 Sandisk Technologies Inc. Method and apparatus for optimizing linear regulator transient performance
CN103957009B (zh) * 2014-04-29 2017-01-25 电子科技大学 一种对压缩采样系统低通滤波器进行补偿的方法
KR101977783B1 (ko) * 2017-10-17 2019-05-13 주식회사 케이엠더블유 전력 증폭기 성능 보정 방법 및 그를 위한 장치
US12374991B2 (en) * 2022-09-01 2025-07-29 Navitas Semiconductor Limited Systems and methods for improving radiated EMI in switching power supplies

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214315A (en) * 1991-04-23 1993-05-25 Cornell Research Foundation, Inc. Nanosecond RF switch driver
US5164679A (en) 1992-01-08 1992-11-17 Harris Corporation AC power amplifier having current limit control
US5281925A (en) * 1992-11-17 1994-01-25 Acrodyne Industries, Inc. RF amplifier providing reduced drive response rise times and fall times
JP3365428B2 (ja) 1992-12-09 2003-01-14 ソニー株式会社 高周波パワーアンプのバイアス制御回路
JPH06334445A (ja) 1993-05-19 1994-12-02 Mitsubishi Electric Corp 半導体集積回路
US6049704A (en) * 1997-12-10 2000-04-11 Motorola, Inc. Apparatus for amplifying an RF signal
US6091279A (en) * 1998-04-13 2000-07-18 Lucent Technologies, Inc. Temperature compensation of LDMOS devices

Also Published As

Publication number Publication date
CN1409893A (zh) 2003-04-09
EP1224732B1 (de) 2006-10-25
EP1224732A1 (de) 2002-07-24
AU7748400A (en) 2001-04-23
DE60031561T2 (de) 2007-09-13
WO2001028086A1 (en) 2001-04-19
JP2003511945A (ja) 2003-03-25
CN1258870C (zh) 2006-06-07
US6304129B1 (en) 2001-10-16
ATE343868T1 (de) 2006-11-15
DE60031561D1 (de) 2006-12-07

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees