ATE344525T1 - Ferroelektrischer speicher - Google Patents

Ferroelektrischer speicher

Info

Publication number
ATE344525T1
ATE344525T1 AT03722013T AT03722013T ATE344525T1 AT E344525 T1 ATE344525 T1 AT E344525T1 AT 03722013 T AT03722013 T AT 03722013T AT 03722013 T AT03722013 T AT 03722013T AT E344525 T1 ATE344525 T1 AT E344525T1
Authority
AT
Austria
Prior art keywords
cell
bit lines
bit
memory
line
Prior art date
Application number
AT03722013T
Other languages
English (en)
Inventor
Iu-Meng Tom Ho
Original Assignee
Symetrix Corp
Iota Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symetrix Corp, Iota Technology Inc filed Critical Symetrix Corp
Application granted granted Critical
Publication of ATE344525T1 publication Critical patent/ATE344525T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Insulating Materials (AREA)
AT03722013T 2002-05-06 2003-05-05 Ferroelektrischer speicher ATE344525T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/139,426 US6809949B2 (en) 2002-05-06 2002-05-06 Ferroelectric memory

Publications (1)

Publication Number Publication Date
ATE344525T1 true ATE344525T1 (de) 2006-11-15

Family

ID=29269544

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03722013T ATE344525T1 (de) 2002-05-06 2003-05-05 Ferroelektrischer speicher

Country Status (10)

Country Link
US (2) US6809949B2 (de)
EP (1) EP1502265B1 (de)
JP (1) JP2005530283A (de)
KR (1) KR20050025176A (de)
CN (1) CN100533590C (de)
AT (1) ATE344525T1 (de)
AU (1) AU2003225292A1 (de)
DE (1) DE60309461T2 (de)
TW (1) TWI301271B (de)
WO (1) WO2003096352A2 (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822891B1 (en) * 2003-06-16 2004-11-23 Kabushiki Kaisha Toshiba Ferroelectric memory device
US7193880B2 (en) * 2004-06-14 2007-03-20 Texas Instruments Incorporated Plateline voltage pulsing to reduce storage node disturbance in ferroelectric memory
JP3970259B2 (ja) * 2003-09-11 2007-09-05 三洋電機株式会社 メモリ
JP4074279B2 (ja) * 2003-09-22 2008-04-09 株式会社東芝 半導体集積回路装置、デジタルカメラ、デジタルビデオカメラ、コンピュータシステム、携帯コンピュータシステム、論理可変ｌｓｉ装置、ｉｃカード、ナビゲーションシステム、ロボット、画像表示装置、光ディスク記憶装置
KR100583112B1 (ko) * 2003-11-27 2006-05-23 주식회사 하이닉스반도체 싱글엔디드 센싱 구조를 갖는 불휘발성 강유전체 메모리장치
US7099179B2 (en) * 2003-12-22 2006-08-29 Unity Semiconductor Corporation Conductive memory array having page mode and burst mode write capability
US7009864B2 (en) * 2003-12-29 2006-03-07 Texas Instruments Incorporated Zero cancellation scheme to reduce plateline voltage in ferroelectric memory
US7352619B2 (en) * 2004-02-05 2008-04-01 Iota Technology, Inc. Electronic memory with binary storage elements
US20050174841A1 (en) * 2004-02-05 2005-08-11 Iota Technology, Inc. Electronic memory with tri-level cell pair
US7133304B2 (en) * 2004-03-22 2006-11-07 Texas Instruments Incorporated Method and apparatus to reduce storage node disturbance in ferroelectric memory
NO322040B1 (no) * 2004-04-15 2006-08-07 Thin Film Electronics Asa Bimodal drift av ferroelektriske og elektrete minneceller og innretninger
US6970371B1 (en) * 2004-05-17 2005-11-29 Texas Instruments Incorporated Reference generator system and methods for reading ferroelectric memory cells using reduced bitline voltages
US20050274396A1 (en) * 2004-06-09 2005-12-15 Hong Shih Methods for wet cleaning quartz surfaces of components for plasma processing chambers
US7472309B2 (en) * 2004-12-22 2008-12-30 Intel Corporation Methods and apparatus to write a file to a nonvolatile memory
EP1833091A4 (de) * 2004-12-28 2008-08-13 Spansion Llc Halbleitereinrichtung und betriebssteuerverfahren dafür
JP4912016B2 (ja) * 2005-05-23 2012-04-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
US20070190670A1 (en) * 2006-02-10 2007-08-16 Forest Carl A Method of making ferroelectric and dielectric layered superlattice materials and memories utilizing same
US7561458B2 (en) * 2006-12-26 2009-07-14 Texas Instruments Incorporated Ferroelectric memory array for implementing a zero cancellation scheme to reduce plateline voltage in ferroelectric memory
KR100866751B1 (ko) * 2006-12-27 2008-11-03 주식회사 하이닉스반도체 강유전체 소자를 적용한 반도체 메모리 장치 및 그리프레쉬 방법
KR100866705B1 (ko) * 2007-07-04 2008-11-03 주식회사 하이닉스반도체 강유전체 소자를 적용한 반도체 메모리 장치
KR100849794B1 (ko) 2007-07-04 2008-07-31 주식회사 하이닉스반도체 강유전체 소자를 적용한 반도체 메모리 장치
JP2009043307A (ja) * 2007-08-06 2009-02-26 Toshiba Corp 半導体記憶装置
US7920404B2 (en) * 2007-12-31 2011-04-05 Texas Instruments Incorporated Ferroelectric memory devices with partitioned platelines
US8130559B1 (en) 2008-08-06 2012-03-06 Altera Corporation MEMS switching device and conductive bridge device based circuits
US7898837B2 (en) * 2009-07-22 2011-03-01 Texas Instruments Incorporated F-SRAM power-off operation
CN101819811B (zh) * 2010-03-31 2013-10-16 清华大学 三值铁电存储器电路
JP6030298B2 (ja) * 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
JP5673414B2 (ja) * 2011-07-20 2015-02-18 富士通セミコンダクター株式会社 半導体装置の製造方法
US8756558B2 (en) * 2012-03-30 2014-06-17 Texas Instruments Incorporated FRAM compiler and layout
US20140029326A1 (en) * 2012-07-26 2014-01-30 Texas Instruments Incorporated Ferroelectric random access memory with a non-destructive read
KR102330412B1 (ko) * 2014-04-25 2021-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
US9767879B2 (en) * 2015-02-17 2017-09-19 Texas Instruments Incorporated Setting of reference voltage for data sensing in ferroelectric memories
US9460770B1 (en) 2015-09-01 2016-10-04 Micron Technology, Inc. Methods of operating ferroelectric memory cells, and related ferroelectric memory cells
US9443576B1 (en) * 2015-11-09 2016-09-13 Microsoft Technology Licensing, Llc Josephson magnetic random access memory with an inductive-shunt
US9786347B1 (en) 2016-03-16 2017-10-10 Micron Technology, Inc. Cell-specific reference generation and sensing
US9721639B1 (en) * 2016-06-21 2017-08-01 Micron Technology, Inc. Memory cell imprint avoidance
EP3507804A4 (de) * 2016-08-31 2020-07-15 Micron Technology, INC. Ferroelektrische speicherzellen
WO2018044510A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including two transistor-one capacitor memory and for accessing same
KR102188490B1 (ko) 2016-08-31 2020-12-09 마이크론 테크놀로지, 인크. 강유전체 메모리를 포함하며 강유전체 메모리에 액세스하기 위한 장치 및 방법
EP3507805B1 (de) * 2016-08-31 2025-10-01 Micron Technology, Inc. Vorrichtungen und verfahren mit ferroelektrischem speicher und zum betrieb von ferroelektrischem speicher
US10418084B2 (en) 2017-02-07 2019-09-17 Micron Technology, Inc. Pre-writing memory cells of an array
JP6915372B2 (ja) * 2017-05-16 2021-08-04 富士通株式会社 メモリセル、メモリモジュール、情報処理装置およびメモリセルのエラー訂正方法
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US10032496B1 (en) 2017-07-27 2018-07-24 Micron Technology, Inc. Variable filter capacitance
US10163480B1 (en) 2017-07-27 2018-12-25 Micron Technology, Inc. Periphery fill and localized capacitance
US10410721B2 (en) * 2017-11-22 2019-09-10 Micron Technology, Inc. Pulsed integrator and memory techniques
WO2019111525A1 (ja) * 2017-12-04 2019-06-13 ソニーセミコンダクタソリューションズ株式会社 半導体記憶装置、電子機器及び情報の読み出し方法
US10622050B2 (en) 2018-05-09 2020-04-14 Micron Technology, Inc. Ferroelectric memory plate power reduction
US10825513B2 (en) * 2018-06-26 2020-11-03 Sandisk Technologies Llc Parasitic noise control during sense operations
US11482529B2 (en) 2019-02-27 2022-10-25 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US10998025B2 (en) 2019-02-27 2021-05-04 Kepler Computing, Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate-line
US11062763B2 (en) * 2019-04-09 2021-07-13 Micron Technology, Inc. Memory array with multiplexed digit lines
CN110428857B (zh) * 2019-07-09 2021-09-24 清华大学 一种基于滞回特性器件的存储器
CN111292782B (zh) * 2019-10-21 2021-11-02 北京潼荔科技有限公司 非易失性随机存取存储器及存取方法
US11729989B2 (en) * 2020-01-06 2023-08-15 Iu-Meng Tom Ho Depletion mode ferroelectric transistors
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US12112792B2 (en) * 2021-08-10 2024-10-08 Micron Technology, Inc. Memory device for wafer-on-wafer formed memory and logic
US11729991B1 (en) 2021-11-01 2023-08-15 Kepler Computing Inc. Common mode compensation for non-linear polar material based differential memory bit-cell
US11482270B1 (en) * 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
US12347476B1 (en) 2022-12-27 2025-07-01 Kepler Computing Inc. Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell
US12334127B2 (en) 2023-01-30 2025-06-17 Kepler Computing Inc. Non-linear polar material based multi-capacitor high density bit-cell
CN118692537B (zh) * 2023-03-21 2025-09-26 清华大学 基于铁电电容的非易失内容寻址存储器、电子设备
CN121096391A (zh) * 2025-07-31 2025-12-09 上海深明奥思半导体科技有限公司 具有存储栅极线的2t1fc铁电存储单元及其制备方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4888733A (en) 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method
US5038323A (en) 1990-03-06 1991-08-06 The United States Of America As Represented By The Secretary Of The Navy Non-volatile memory cell with ferroelectric capacitor having logically inactive electrode
US5262982A (en) * 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
US5666305A (en) * 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
US5373463A (en) * 1993-07-06 1994-12-13 Motorola Inc. Ferroelectric nonvolatile random access memory having drive line segments
US5406510A (en) 1993-07-15 1995-04-11 Symetrix Corporation Non-volatile memory
JP3218844B2 (ja) 1994-03-22 2001-10-15 松下電器産業株式会社 半導体メモリ装置
DE69621293T2 (de) 1995-08-02 2002-12-12 Matsushita Electric Industrial Co., Ltd. Ferroelektrische Speichervorrichtung
US5598366A (en) 1995-08-16 1997-01-28 Ramtron International Corporation Ferroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment drivers
SG79200A1 (en) 1995-08-21 2001-03-20 Matsushita Electric Industrial Co Ltd Ferroelectric memory devices and method for testing them
CN1183166A (zh) * 1996-03-25 1998-05-27 松下电子工业株式会社 强电介质存储器件
US5737260A (en) 1996-03-27 1998-04-07 Sharp Kabushiki Kaisha Dual mode ferroelectric memory reference scheme
KR100206713B1 (ko) * 1996-10-09 1999-07-01 윤종용 강유전체 메모리 장치에서의 비파괴적 억세싱 방법 및 그 억세싱 회로
US5966318A (en) * 1996-12-17 1999-10-12 Raytheon Company Nondestructive readout memory utilizing ferroelectric capacitors isolated from bitlines by buffer amplifiers
JP3495905B2 (ja) 1998-02-19 2004-02-09 シャープ株式会社 半導体記憶装置
KR100268947B1 (ko) * 1998-04-03 2000-10-16 김영환 비휘발성 강유전체 메모리 및 그의 제어회로
KR100281125B1 (ko) 1998-12-29 2001-03-02 김영환 비휘발성 강유전체 메모리장치
US6215692B1 (en) * 1998-05-13 2001-04-10 Hyundai Electronics Industries Co., Ltd. Non-volatile ferroelectric memory
KR100363102B1 (ko) * 1998-07-15 2003-02-19 주식회사 하이닉스반도체 강유전체 메모리
US5995407A (en) 1998-10-13 1999-11-30 Celis Semiconductor Corporation Self-referencing ferroelectric memory
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same
US6330180B2 (en) * 2000-03-24 2001-12-11 Fujitsu Limited Semiconductor memory device with reduced power consumption and with reduced test time
JP2001319472A (ja) * 2000-05-10 2001-11-16 Toshiba Corp 半導体記憶装置
EP1325500B1 (de) * 2000-09-25 2005-12-28 Symetrix Corporation Ferro-elektrischer speicher und sein betriebsverfahren
JP2002109875A (ja) * 2000-09-29 2002-04-12 Nec Corp 強誘電体容量を用いたシャドーｒａｍセル及び不揮発性メモリ装置並びにその制御方法
KR100428652B1 (ko) * 2001-03-28 2004-04-29 주식회사 하이닉스반도체 인접 셀간에 셀 플레이트를 공유하는 강유전체 메모리 소자
US6522570B1 (en) * 2001-12-13 2003-02-18 Micron Technology, Inc. System and method for inhibiting imprinting of capacitor structures of a memory
US6873536B2 (en) * 2002-04-19 2005-03-29 Texas Instruments Incorporated Shared data buffer in FeRAM utilizing word line direction segmentation

Also Published As

Publication number Publication date
WO2003096352A3 (en) 2004-06-24
DE60309461D1 (de) 2006-12-14
US7212427B2 (en) 2007-05-01
TWI301271B (en) 2008-09-21
EP1502265B1 (de) 2006-11-02
WO2003096352A2 (en) 2003-11-20
AU2003225292A1 (en) 2003-11-11
CN100533590C (zh) 2009-08-26
US20040105296A1 (en) 2004-06-03
DE60309461T2 (de) 2007-09-20
US20030206430A1 (en) 2003-11-06
AU2003225292A8 (en) 2003-11-11
TW200400509A (en) 2004-01-01
HK1081320A1 (zh) 2006-05-12
KR20050025176A (ko) 2005-03-11
CN1666293A (zh) 2005-09-07
JP2005530283A (ja) 2005-10-06
US6809949B2 (en) 2004-10-26
EP1502265A2 (de) 2005-02-02

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