ATE344830T1 - Cmp-polierzusammensetzung für metall - Google Patents

Cmp-polierzusammensetzung für metall

Info

Publication number
ATE344830T1
ATE344830T1 AT01950299T AT01950299T ATE344830T1 AT E344830 T1 ATE344830 T1 AT E344830T1 AT 01950299 T AT01950299 T AT 01950299T AT 01950299 T AT01950299 T AT 01950299T AT E344830 T1 ATE344830 T1 AT E344830T1
Authority
AT
Austria
Prior art keywords
metal
polishing composition
cmp polishing
compositions
tantalum
Prior art date
Application number
AT01950299T
Other languages
English (en)
Inventor
Shumin Wang
Steven K Grumbine
Christopher C Streinz
Eric W G Hoglund
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE344830T1 publication Critical patent/ATE344830T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT01950299T 2000-07-05 2001-06-14 Cmp-polierzusammensetzung für metall ATE344830T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/609,882 US6592776B1 (en) 1997-07-28 2000-07-05 Polishing composition for metal CMP

Publications (1)

Publication Number Publication Date
ATE344830T1 true ATE344830T1 (de) 2006-11-15

Family

ID=24442734

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01950299T ATE344830T1 (de) 2000-07-05 2001-06-14 Cmp-polierzusammensetzung für metall

Country Status (9)

Country Link
US (2) US6592776B1 (de)
EP (1) EP1299489B1 (de)
JP (1) JP4510374B2 (de)
CN (1) CN1216953C (de)
AT (1) ATE344830T1 (de)
AU (1) AU2001271308A1 (de)
DE (1) DE60124404T2 (de)
TW (1) TWI261063B (de)
WO (1) WO2002002706A1 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US7748233B2 (en) 1998-12-23 2010-07-06 S.I.P. Technologies L.L.C. Sanitized water dispenser
US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
US6762132B1 (en) * 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
EP1356502A1 (de) * 2001-01-16 2003-10-29 Cabot Microelectronics Corporation Ammoniumoxalat enthaltendes poliersystem und dessen verfahren
JP2002288821A (ja) * 2001-03-27 2002-10-04 Showa Denko Kk テクスチャリング加工用組成物
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
JP2003313542A (ja) * 2002-04-22 2003-11-06 Jsr Corp 化学機械研磨用水系分散体
US20070015448A1 (en) * 2003-08-07 2007-01-18 Ppg Industries Ohio, Inc. Polishing pad having edge surface treatment
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
IL157681A0 (en) 2003-09-01 2004-03-28 J G Systems Inc Improved abrasives for chemical-mechanical polishing applications
US7422684B1 (en) 2003-10-16 2008-09-09 S.I.P. Technologies, L.L.C. Method and apparatus for sanitizing water dispensed from a water dispenser having a reservoir
US20060124592A1 (en) * 2004-12-09 2006-06-15 Miller Anne E Chemical mechanical polish slurry
WO2006119249A2 (en) * 2005-04-29 2006-11-09 Brown University Aerogels and methods of using the same for chemical mechanical planarization and for extracting metal ions
US20090283715A1 (en) * 2006-07-04 2009-11-19 Shigeru Nobe Polishing slurry for cmp
WO2008008282A1 (en) 2006-07-12 2008-01-17 Cabot Microelectronics Corporation Cmp method for metal-containing substrates
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US20080274618A1 (en) * 2007-05-04 2008-11-06 Ferro Corporation Polishing composition and method for high selectivity polysilicon cmp
EP2188344B1 (de) 2007-09-21 2016-04-27 Cabot Microelectronics Corporation Polierzusammensetzung und verfahren anhand von aminosilanbehandelten schleifpartikeln
WO2010033156A2 (en) * 2008-09-19 2010-03-25 Cabot Microelectronics Corporation Barrier slurry for low-k dielectrics
JP2010167551A (ja) * 2008-12-26 2010-08-05 Nomura Micro Sci Co Ltd 使用済みスラリーの再生方法
KR101751553B1 (ko) 2009-06-30 2017-06-27 바스프 에스이 수성 알칼리 세정 조성물 및 그 사용 방법
SG189534A1 (en) * 2010-11-08 2013-06-28 Fujimi Inc Composition for polishing and method of polishing semiconductor substrate using same
US8524540B2 (en) * 2011-02-01 2013-09-03 Nilesh Kapadia Adhesion promoting composition for metal leadframes
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
CN103484876B (zh) * 2013-09-23 2016-01-13 无锡阳工机械制造有限公司 一种除锈浆料
CN103498161B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
CN103526207B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种除锈浆料
CN103498160B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种抛光浆料
CN104745087B (zh) * 2013-12-25 2018-07-24 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
US9385000B2 (en) * 2014-01-24 2016-07-05 United Microelectronics Corp. Method of performing etching process
US9828574B2 (en) 2015-01-13 2017-11-28 Cabot Microelectronics Corporation Cleaning composition and method for cleaning semiconductor wafers after CMP
CN105331992A (zh) * 2015-10-15 2016-02-17 当涂县维思共创工业产品设计有限公司 一种铝表面脱脂除油剂
CN105369273A (zh) * 2015-10-15 2016-03-02 当涂县维思共创工业产品设计有限公司 一种铝型材表面清洗抛光剂
US10586914B2 (en) 2016-10-14 2020-03-10 Applied Materials, Inc. Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
US10037889B1 (en) * 2017-03-29 2018-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films
KR102619857B1 (ko) * 2020-05-20 2023-12-29 삼성에스디아이 주식회사 텅스텐 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 연마 방법

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4563483A (en) 1983-07-06 1986-01-07 Creative Products Resource Ltd. Concrete cleaning composition
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
GB8924473D0 (en) 1989-10-31 1989-12-20 Connaught Lab Outer membrane protein p1 and peptides of haemophilus influenzae b
JPH07142830A (ja) * 1993-11-18 1995-06-02 Idemitsu Kosan Co Ltd プリント配線板用積層体
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP3303544B2 (ja) 1994-07-27 2002-07-22 ソニー株式会社 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法
JPH08113772A (ja) * 1994-10-18 1996-05-07 Asahi Denka Kogyo Kk シリコンウェハ研磨剤組成物及びシリコンウェハ研磨剤用組成物
JP3788810B2 (ja) * 1995-02-20 2006-06-21 株式会社東芝 研磨装置
US5645736A (en) 1995-12-29 1997-07-08 Symbios Logic Inc. Method for polishing a wafer
US5993686A (en) 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US6039891A (en) 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US6033596A (en) 1996-09-24 2000-03-07 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5783489A (en) 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
KR19980032145A (ko) * 1996-10-04 1998-07-25 포만제프리엘 알루미늄 구리 합금의 화학기계적 연마시 구리 도금을 방지하는 방법
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
JP3927270B2 (ja) * 1996-12-27 2007-06-06 富士通株式会社 研磨剤、研磨方法および半導体装置の製造方法
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
JPH10237426A (ja) * 1997-02-21 1998-09-08 Nippon Oil Co Ltd ラップ加工用油剤組成物
WO1998047662A1 (en) 1997-04-18 1998-10-29 Cabot Corporation Polishing pad for a semiconductor substrate
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
TW479285B (en) 1997-04-30 2002-03-11 Minnesota Mining & Mfg Method of modifying a wafer suited for semiconductor fabrication
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP3560484B2 (ja) * 1998-08-05 2004-09-02 昭和電工株式会社 Ｌｓｉデバイス研磨用研磨材組成物及び研磨方法
US6299659B1 (en) * 1998-08-05 2001-10-09 Showa Denko K.K. Polishing material composition and polishing method for polishing LSI devices
DE69942615D1 (de) * 1998-10-23 2010-09-02 Fujifilm Electronic Materials Eine chemisch-mechanisch polierende aufschlämmung, eine beschleunigerlösung enthaltend
JP2000133621A (ja) * 1998-10-27 2000-05-12 Tokyo Magnetic Printing Co Ltd 化学機械研磨組成物
JP4366735B2 (ja) * 1998-11-05 2009-11-18 Ｊｓｒ株式会社 重合体粒子を含有する研磨剤
US6372648B1 (en) * 1998-11-16 2002-04-16 Texas Instruments Incorporated Integrated circuit planarization method
HK1046151A1 (zh) * 1999-07-07 2002-12-27 卡伯特微电子公司 含硅烷改性研磨颗粒的化学机械抛光(cmp)组合物
US6225223B1 (en) * 1999-08-16 2001-05-01 Taiwan Semiconductor Manufacturing Company Method to eliminate dishing of copper interconnects
EP1356502A1 (de) * 2001-01-16 2003-10-29 Cabot Microelectronics Corporation Ammoniumoxalat enthaltendes poliersystem und dessen verfahren

Also Published As

Publication number Publication date
US20030203635A1 (en) 2003-10-30
CN1216953C (zh) 2005-08-31
DE60124404D1 (de) 2006-12-21
JP4510374B2 (ja) 2010-07-21
AU2001271308A1 (en) 2002-01-14
WO2002002706A1 (en) 2002-01-10
DE60124404T2 (de) 2007-08-23
US6767476B2 (en) 2004-07-27
EP1299489A1 (de) 2003-04-09
EP1299489B1 (de) 2006-11-08
JP2004502823A (ja) 2004-01-29
CN1436225A (zh) 2003-08-13
TWI261063B (en) 2006-09-01
US6592776B1 (en) 2003-07-15

Similar Documents

Publication Publication Date Title
DE60124404D1 (de) Cmp-polierzusammensetzung für metall
TWI256966B (en) Chemical mechanical polishing slurry useful for copper substrates
TW200613512A (en) Luminescent silicon oxide flakes
TW200740972A (en) Metal polishing slurry
WO2006076613A3 (en) Metal nanoparticle compositions
WO2005107456A3 (en) Antimicrobial silicon oxide flakes
MY117693A (en) Chemical mechanical polishing slurry useful for copper/tantalum substrates
AU2003266489A1 (en) Corrosion protection on metals
WO2003032084A3 (en) Low viscosity precursor compositions and methods for the deposition of conductive electronic features
MY116324A (en) Chemical mechanical polishing slurry useful for copper/tantalum substrate
AU2002333601A1 (en) Metal nitride deposition by ald using gettering reactant
TW200624588A (en) Organometallic compounds
ATE338100T1 (de) Cmp-zusammensetzung enthaltend silanmodifizierte- schleifteilchen
IL147235A0 (en) Chemical mechanical polishing systems and methods for their use
MXPA03001299A (es) Composiciones de recubrimiento para la adhesion a sustratos olefinicos.
TW200720383A (en) Polishing fluids and methods for CMP
WO2006073435A3 (en) Multi-layered superhard nanocomposite coatings
SG166794A1 (en) Layer arrangement for the formation of a coating on a surface of a substrate,coating method,and substrate with a layer arrangement
MY155014A (en) Rate-enhanced cmp compositions for dielectric films
GB2425308A (en) Tantalum amide complexes for depositing tantalum-containing films, and method of making same
AU2002357160A1 (en) Copper deposition using copper formate complexes
AU2002218892A1 (en) Composition comprising an oxidizing and complexing compound
WO2007111813A3 (en) Iodate-containing chemical-mechanical polishing compositions and methods
EP1548075A3 (de) Zusammensetzung und Verfahren zur Entfernung einer Barriereschicht
AU2002258739A1 (en) Iii-v arsenide nitride semiconductor substrate

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties