ATE350333T1 - Verfahren zur herstellung aufgehängter poröser siliziummikrostrukturen und anwendung in gassensoren - Google Patents

Verfahren zur herstellung aufgehängter poröser siliziummikrostrukturen und anwendung in gassensoren

Info

Publication number
ATE350333T1
ATE350333T1 AT02712117T AT02712117T ATE350333T1 AT E350333 T1 ATE350333 T1 AT E350333T1 AT 02712117 T AT02712117 T AT 02712117T AT 02712117 T AT02712117 T AT 02712117T AT E350333 T1 ATE350333 T1 AT E350333T1
Authority
AT
Austria
Prior art keywords
porous silicon
membranes
fabrication
gas sensors
thermal
Prior art date
Application number
AT02712117T
Other languages
English (en)
Inventor
Christos Tsamis
Angeliki Tserepi
Androula G Nassiopoulou
Original Assignee
Ncsr Sdemokritoss
Christos Tsamis
Angeliki Tserepi
Androula G Nassiopoulou
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ncsr Sdemokritoss, Christos Tsamis, Angeliki Tserepi, Androula G Nassiopoulou filed Critical Ncsr Sdemokritoss
Application granted granted Critical
Publication of ATE350333T1 publication Critical patent/ATE350333T1/de

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00682—Treatments for improving mechanical properties, not provided for in B81C1/00658 - B81C1/0065
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0069—Thermal properties, e.g. improve thermal insulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0278—Temperature sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G01N27/16—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G01N27/18—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by changes in the thermal conductivity of a surrounding material to be tested

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Ceramic Products (AREA)
AT02712117T 2001-07-31 2002-02-18 Verfahren zur herstellung aufgehängter poröser siliziummikrostrukturen und anwendung in gassensoren ATE350333T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GR20010100378A GR1004040B (el) 2001-07-31 2001-07-31 Μεθοδος για την κατασκευη αιωρουμενων μεμβρανων πορωδους πυριτιου και εφαρμογης της σε αισθητηρες αεριων

Publications (1)

Publication Number Publication Date
ATE350333T1 true ATE350333T1 (de) 2007-01-15

Family

ID=10944796

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02712117T ATE350333T1 (de) 2001-07-31 2002-02-18 Verfahren zur herstellung aufgehängter poröser siliziummikrostrukturen und anwendung in gassensoren

Country Status (8)

Country Link
US (1) US20040195096A1 (de)
EP (1) EP1417151B9 (de)
JP (1) JP2005502480A (de)
CN (1) CN1538934A (de)
AT (1) ATE350333T1 (de)
DE (1) DE60217359D1 (de)
GR (1) GR1004040B (de)
WO (1) WO2003011747A1 (de)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10032579B4 (de) * 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
GR1004106B (el) * 2002-01-24 2003-01-13 Εκεφε "Δημοκριτος" Ινστιτουτο Μικροηλεκτρονικης Ολοκληρωμενοι θερμικοι αισθητηρες πυριτιου χαμηλης ισχυος και διαταξεις μικρο-ροης βασισμενοι στην χρηση τεχνολογιας κοιλοτητας αερα σφραγισμενης με μεμβρανη πορωδους πυριτιου ή τεχνολογιας μικρο-καναλιων
US20080044939A1 (en) * 2002-01-24 2008-02-21 Nassiopoulou Androula G Low power silicon thermal sensors and microfluidic devices based on the use of porous sealed air cavity technology or microchannel technology
DE10260859B4 (de) * 2002-12-23 2008-12-04 Robert Bosch Gmbh Strukturkörper mit einem porösen Bereich und dessen Verwendung sowie Verfahren zur Einstellung der Wärmeleitfähigkeit eines porösen Bereiches
WO2004077073A1 (en) * 2003-02-24 2004-09-10 University Of Florida Integrated monolithic tri-axial micromachined accelerometer
US7026184B2 (en) * 2003-02-26 2006-04-11 Carnegie Mellon University Method of fabricating microstructures and devices made therefrom
FR2854277B1 (fr) 2003-04-24 2005-08-05 Commissariat Energie Atomique Detecteur thermique de rayonnement electromagnetique a structure alveolee
US7762719B2 (en) * 2004-04-20 2010-07-27 California Institute Of Technology Microscale calorimeter
CN1294074C (zh) * 2004-04-29 2007-01-10 上海交通大学 金属薄膜微桥的制造方法及其力学特性测试方法
KR100978329B1 (ko) * 2005-08-17 2010-08-26 파나소닉 전공 주식회사 적외선 센서 유닛 및 그 제조 방법
JP4899715B2 (ja) * 2005-08-17 2012-03-21 パナソニック電工株式会社 赤外線センサユニットの製造方法
JP4801396B2 (ja) * 2005-09-01 2011-10-26 敏嗣 植田 ガスセンサ及びガスセンサの製造方法
EP1772717B1 (de) * 2005-10-04 2011-05-11 Sensirion Holding AG Drucksensor oder Gassensor und Messmethode basiert auf Nanohohlräumen
CN100348953C (zh) * 2005-12-19 2007-11-14 浙江大学 一种测热式微型流量传感器
DE102006028435A1 (de) * 2006-06-21 2007-12-27 Robert Bosch Gmbh Sensor und Verfahren zu seiner Herstellung
JP4997039B2 (ja) * 2007-09-20 2012-08-08 アズビル株式会社 フローセンサ
US7928343B2 (en) 2007-12-04 2011-04-19 The Board Of Trustees Of The University Of Illinois Microcantilever heater-thermometer with integrated temperature-compensated strain sensor
WO2009097487A1 (en) 2008-01-31 2009-08-06 The Board Of Trustees Of The University Of Illinois Temperature-dependent nanoscale contact potential measurement technique and device
JP5138404B2 (ja) * 2008-02-05 2013-02-06 アズビル株式会社 ガスセンサチップ及びこれを備えたガスセンサ
US8931950B2 (en) 2008-08-20 2015-01-13 The Board Of Trustees Of The University Of Illinois Device for calorimetric measurement
CN101811657B (zh) * 2009-02-20 2012-09-26 原相科技股份有限公司 微机电传感器与制作方法
US8387443B2 (en) * 2009-09-11 2013-03-05 The Board Of Trustees Of The University Of Illinois Microcantilever with reduced second harmonic while in contact with a surface and nano scale infrared spectrometer
WO2011055605A1 (ja) 2009-11-06 2011-05-12 株式会社日立製作所 ガスセンサ
CN101795505B (zh) * 2010-02-11 2013-04-17 中国科学院上海微系统与信息技术研究所 一种具有网孔结构加热膜的低功耗微型加热器及制作方法
CN101932146B (zh) * 2010-09-10 2012-10-17 中国科学院上海微系统与信息技术研究所 具有圆弧形凹槽加热膜区的三维微型加热器及制作方法
CN102175287A (zh) * 2010-12-30 2011-09-07 国家纳米技术与工程研究院 一种基于mems技术的流量计芯片的测量部件及其制作方法
WO2012094006A1 (en) 2011-01-06 2012-07-12 The Board Of Trustees Of The University Of Illinois Three-dimensional (3d) porous device and method of making a 3d porous device
CN102730622B (zh) * 2011-04-01 2015-06-17 中国科学院电子学研究所 一种微型热导检测器集成芯片及制造方法
US9559349B2 (en) 2011-07-29 2017-01-31 The Board Of Trustees Of The University Of Illinois Method of fabricating a three-dimensional (3D) porous electrode architecture for a microbattery
US8914911B2 (en) 2011-08-15 2014-12-16 The Board Of Trustees Of The University Of Illinois Magnetic actuation and thermal cantilevers for temperature and frequency dependent atomic force microscopy
US8533861B2 (en) 2011-08-15 2013-09-10 The Board Of Trustees Of The University Of Illinois Magnetic actuation and thermal cantilevers for temperature and frequency dependent atomic force microscopy
ITRM20120311A1 (it) * 2012-07-04 2014-01-05 Consiglio Nazionale Ricerche Rilevatore di conducibilità termica (tcd) per applicazioni di gas-cromatografia veloce (gc).
FR2995692B1 (fr) * 2012-09-19 2014-10-10 Commissariat Energie Atomique Capteur de flux thermique a resolution augmentee
AT513634B1 (de) * 2012-12-05 2015-02-15 Univ Wien Tech MEMS-Sensor zur Detektion von Umgebungsparametern
FR3002219B1 (fr) 2013-02-19 2015-04-10 Commissariat Energie Atomique Procede de fabrication d'une structure micromecanique et/ou nanomecanique comportant une surface poreuse
DE102013220908B4 (de) * 2013-10-15 2015-09-24 Continental Automotive Gmbh Sensorelement
FR3011835B1 (fr) 2013-10-16 2015-12-25 Commissariat Energie Atomique Procede de realisation par voie electrochimique d'au moins une zone poreuse d'une structure micro et/ou nanoelectronique
US9863901B2 (en) * 2013-12-06 2018-01-09 Robert Bosch Gmbh Semiconductor sensor having a suspended structure and method of forming a semiconductor sensor having a suspended structure
CN104176699A (zh) * 2014-07-18 2014-12-03 苏州能斯达电子科技有限公司 一种具有绝热沟槽的mems硅基微热板及其加工方法
CN104108677A (zh) * 2014-07-18 2014-10-22 苏州能斯达电子科技有限公司 一种mems硅基微热板及其加工方法
CN104142359B (zh) * 2014-07-18 2016-08-31 苏州能斯达电子科技有限公司 一种mems气体传感器及其加工方法
CN104165902B (zh) * 2014-07-18 2017-01-18 苏州能斯达电子科技有限公司 一种具有绝热沟槽的mems气体传感器及其加工方法
CN104155472A (zh) * 2014-07-18 2014-11-19 苏州能斯达电子科技有限公司 一种热膜风速风向传感器及其制备方法
CN104181203B (zh) * 2014-08-13 2017-12-22 苏州能斯达电子科技有限公司 一种mems气体传感器及其制作方法
JP6467172B2 (ja) * 2014-09-16 2019-02-06 ヤマハファインテック株式会社 接触燃焼式ガスセンサ
JP6467173B2 (ja) * 2014-09-16 2019-02-06 ヤマハファインテック株式会社 接触燃焼式ガスセンサ
KR102210634B1 (ko) * 2014-09-24 2021-02-02 엘지전자 주식회사 마이크로 히터 및 마이크로 센서
CN105445420B (zh) * 2014-09-24 2019-12-06 普因特工程有限公司 微加热器和微传感器及其制造方法
KR102190862B1 (ko) * 2014-09-24 2020-12-14 (주)포인트엔지니어링 마이크로 히터 제조방법 및 마이크로 센서 및 마이크로 센서 제조방법
CN104401931B (zh) * 2014-11-24 2016-06-29 苏州诺联芯电子科技有限公司 微型加热器及其制造方法
US10545108B2 (en) 2014-12-29 2020-01-28 Robert Bosch Gmbh Nanostructured gas sensor
CN104501983B (zh) * 2015-01-08 2017-03-22 上海新微技术研发中心有限公司 一种褶皱膜温度传感器及其制作方法
US10062904B2 (en) 2015-05-26 2018-08-28 The Board Of Trustees Of The University Of Illinois Scaffold-free 3D porous electrode and method of making a scaffold-free 3D porous electrode
CN105136871A (zh) * 2015-06-19 2015-12-09 上海集成电路研发中心有限公司 一种微型热导池结构及其加工制造方法
KR101808239B1 (ko) 2015-09-04 2017-12-13 (주)포인트엔지니어링 마이크로 히터 및 마이크로 센서
KR101805784B1 (ko) 2015-11-11 2017-12-07 (주)포인트엔지니어링 마이크로 히터 및 마이크로 센서 및 마이크로 센서 제조방법
JP6359049B2 (ja) * 2016-05-09 2018-07-18 Ｎｉｓｓｈａ株式会社 ガスセンサデバイス及びその製造方法
CN107421994B (zh) * 2016-05-24 2019-11-15 上海新昇半导体科技有限公司 基于二维电子气的低功耗氢气传感器及其制造方法
CN107782767B (zh) * 2016-08-26 2022-01-07 深迪半导体(绍兴)有限公司 一种气体传感器加热盘及加工方法
US10800649B2 (en) 2016-11-28 2020-10-13 Analog Devices International Unlimited Company Planar processing of suspended microelectromechanical systems (MEMS) devices
CN106922042A (zh) * 2017-03-06 2017-07-04 武汉微纳传感技术有限公司 一种微热盘及其制造方法
RU2661611C1 (ru) * 2017-12-06 2018-07-17 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Способ создания сенсорного элемента на основе микрорезонатора из пористого кремния для детекции паров взрывчатых веществ
CA3087632C (en) * 2018-01-05 2025-05-20 Hahn-Schickard-Gesellschaft Fuer Angewandte Forschung E.V. GAS SENSOR AND GAS SENSOR OPERATING METHOD
EP4141430B1 (de) 2018-01-05 2025-06-18 Hahn-Schickard-Gesellschaft für angewandte Forschung e. V. Auswerteanordnung für einen thermischen gassensor, verfahren und computerprogramm
CN108318548B (zh) * 2018-05-11 2024-03-15 微纳感知(合肥)技术有限公司 一种单悬梁气体传感器、传感器阵列及传感器的制备方法
CN108318547B (zh) * 2018-05-11 2024-01-23 微纳感知(合肥)技术有限公司 一种具有卷曲结构的单悬梁式气体传感器及传感器阵列
CN108519408B (zh) * 2018-05-11 2024-04-02 微纳感知(合肥)技术有限公司 一种气体传感器、传感器的制备方法及传感器阵列
CN108519409B (zh) * 2018-05-11 2024-05-07 微纳感知(合肥)技术有限公司 一种翘曲的单悬梁式气体传感器、制备方法及传感器阵列
CN109211342B (zh) * 2018-09-05 2020-03-20 四方光电股份有限公司 一种气流流量计、mems硅基温敏芯片及其制备方法
CN110963458B (zh) * 2018-09-30 2023-09-15 上海新微技术研发中心有限公司 一种在基板中形成微细结构的方法及微细结构
US10843920B2 (en) 2019-03-08 2020-11-24 Analog Devices International Unlimited Company Suspended microelectromechanical system (MEMS) devices
CN110182754B (zh) * 2019-05-17 2021-10-29 中国科学院上海微系统与信息技术研究所 一种具有微纳结构增强的微加热器及其制备方法
CN115218974A (zh) * 2021-04-16 2022-10-21 青岛芯笙微纳电子科技有限公司 一种具有微纳结构表面的mems流量传感器及其制作方法
CN114965625B (zh) * 2022-05-24 2023-07-14 广东芯阅科技有限公司 一种基于悬浮工作电极的电化学敏感芯片及加工方法
US12604493B2 (en) 2022-06-29 2026-04-14 Globalfoundries U.S. Inc. Device over patterned buried porous layer of semiconductor material
CN115144443A (zh) * 2022-07-12 2022-10-04 中国科学院苏州纳米技术与纳米仿生研究所 气体传感器及其制作方法
CN116730277B (zh) * 2023-08-14 2023-11-03 启思半导体(杭州)有限责任公司 Mems气体传感器及其制作方法
EP4576930A1 (de) * 2023-12-21 2025-06-25 Infineon Technologies AG Mems-heizer und mems-flüssigkeitssensor
WO2025206330A1 (ja) * 2024-03-29 2025-10-02 三井金属鉱業株式会社 ガス濃度測定デバイス及び被測定ガス中の被検出対象ガス濃度の測定方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5464966A (en) * 1992-10-26 1995-11-07 The United States Of America As Represented By The Secretary Of Commerce Micro-hotplate devices and methods for their fabrication
US5345213A (en) * 1992-10-26 1994-09-06 The United States Of America, As Represented By The Secretary Of Commerce Temperature-controlled, micromachined arrays for chemical sensor fabrication and operation
DE4433102A1 (de) * 1994-09-16 1996-03-21 Fraunhofer Ges Forschung Elektrodenanordnung zur Signalerfassung gassensitiver Schichten
EP0819935B1 (de) * 1996-07-19 1999-03-31 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Katalytisches Gassensorelement
GR1003010B (el) * 1997-05-07 1998-11-20 "����������" Ολοκληρωμενος αισθητηρας ροης αεριων χρησιμοποιωντας τεχνολογια πορωδους πυριτιου
AU2001259961A1 (en) * 2000-05-08 2001-11-20 Interuniversitair Micro-Elektronica Centrum Method and technology for high-throughput lead profiling
DE10030352A1 (de) * 2000-06-21 2002-01-10 Bosch Gmbh Robert Mikromechanisches Bauelement, insbesondere Sensorelement, mit einer stabilisierten Membran und Verfahren zur Herstellung eines derartigen Bauelements

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EP1417151B9 (de) 2007-08-08
DE60217359D1 (de) 2007-02-15
WO2003011747A1 (en) 2003-02-13
US20040195096A1 (en) 2004-10-07
CN1538934A (zh) 2004-10-20
EP1417151B1 (de) 2007-01-03
EP1417151A1 (de) 2004-05-12
GR1004040B (el) 2002-10-31
JP2005502480A (ja) 2005-01-27

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