ATE350767T1 - Leistungstransistoranordnung höher frequenz - Google Patents

Leistungstransistoranordnung höher frequenz

Info

Publication number
ATE350767T1
ATE350767T1 AT99960588T AT99960588T ATE350767T1 AT E350767 T1 ATE350767 T1 AT E350767T1 AT 99960588 T AT99960588 T AT 99960588T AT 99960588 T AT99960588 T AT 99960588T AT E350767 T1 ATE350767 T1 AT E350767T1
Authority
AT
Austria
Prior art keywords
output
conductors
coupled
terminal
conductive island
Prior art date
Application number
AT99960588T
Other languages
English (en)
Inventor
Cynthia Blair
Timothy Ballard
James Curtis
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of ATE350767T1 publication Critical patent/ATE350767T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Microwave Amplifiers (AREA)
AT99960588T 1998-12-02 1999-11-23 Leistungstransistoranordnung höher frequenz ATE350767T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/204,666 US6177834B1 (en) 1998-12-02 1998-12-02 Output matched LDMOS power transistor device

Publications (1)

Publication Number Publication Date
ATE350767T1 true ATE350767T1 (de) 2007-01-15

Family

ID=22758908

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99960588T ATE350767T1 (de) 1998-12-02 1999-11-23 Leistungstransistoranordnung höher frequenz

Country Status (11)

Country Link
US (1) US6177834B1 (de)
EP (1) EP1145314B1 (de)
JP (1) JP2002531948A (de)
KR (1) KR20010080542A (de)
CN (1) CN1211858C (de)
AT (1) ATE350767T1 (de)
AU (1) AU1745100A (de)
CA (1) CA2353473A1 (de)
DE (1) DE69934717T2 (de)
HK (1) HK1043248A1 (de)
WO (1) WO2000033378A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4663049B2 (ja) * 1999-07-29 2011-03-30 三菱電機株式会社 電界効果トランジスタ、該電界効果トランジスタを含むモノリシックマイクロ波集積回路、及び設計方法
US6586833B2 (en) 2000-11-16 2003-07-01 Silicon Semiconductor Corporation Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines
US6583673B2 (en) * 2001-02-26 2003-06-24 Infineon Technologies Ag Stability enhanced multistage power amplifier
DE10112414A1 (de) * 2001-03-15 2002-10-02 Infineon Technologies Ag Schaltungsanordnung mit einem induktiven oder kapazitiven Bauelement und Verwendung von Anschlussbeinen eines Halbleitergehäuses als induktive oder kapazitive Bauelemente
US6674157B2 (en) 2001-11-02 2004-01-06 Fairchild Semiconductor Corporation Semiconductor package comprising vertical power transistor
US6566749B1 (en) 2002-01-15 2003-05-20 Fairchild Semiconductor Corporation Semiconductor die package with improved thermal and electrical performance
US7002249B2 (en) * 2002-11-12 2006-02-21 Primarion, Inc. Microelectronic component with reduced parasitic inductance and method of fabricating
US20040150489A1 (en) * 2003-02-05 2004-08-05 Sirenza Microdevices, Inc On-carrier impedance transform network
US6946706B1 (en) 2003-07-09 2005-09-20 National Semiconductor Corporation LDMOS transistor structure for improving hot carrier reliability
CN101084622B (zh) * 2004-12-21 2012-02-29 Nxp股份有限公司 功率器件和功率器件的控制方法
US7564303B2 (en) * 2005-07-26 2009-07-21 Infineon Technologies Ag Semiconductor power device and RF signal amplifier
US7372334B2 (en) * 2005-07-26 2008-05-13 Infineon Technologies Ag Output match transistor
US7961470B2 (en) * 2006-07-19 2011-06-14 Infineon Technologies Ag Power amplifier
US9741673B2 (en) * 2007-06-22 2017-08-22 Cree, Inc. RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features
US8110932B2 (en) * 2007-10-12 2012-02-07 Infineon Technologies Ag Semiconductor circuit with amplifier, bond wires and inductance compensating bond wire
EP2600525A3 (de) * 2009-04-30 2014-04-09 Freescale Semiconductor, Inc. Drahtlose Kommunikationsvorrichtung und Halbleitergehäusevorrichtung mit einem dafür vorgesehenen Leistungsverstärker
WO2010125431A1 (en) * 2009-04-30 2010-11-04 Freescale Semiconductor, Inc. Wireless communication device and semiconductor package device having a power amplifier therefor
DE102010009984A1 (de) * 2009-12-28 2011-06-30 Rohde & Schwarz GmbH & Co. KG, 81671 Verstärkerbaustein mit einem Kompensationselement
US8410853B2 (en) 2010-06-01 2013-04-02 Nxp B.V. Inductive circuit arrangement
US7939864B1 (en) * 2010-06-01 2011-05-10 Nxp B.V. Inductive bond-wire circuit
EP3664292A1 (de) * 2012-06-29 2020-06-10 Cree, Inc. Hf-transistorpackungen mit hochfrequenzstabilisierung
US9312817B2 (en) * 2012-07-20 2016-04-12 Freescale Semiconductor, Inc. Semiconductor package design providing reduced electromagnetic coupling between circuit components
JP6164721B2 (ja) * 2012-11-09 2017-07-19 住友電工デバイス・イノベーション株式会社 半導体装置
US8736379B1 (en) * 2013-02-08 2014-05-27 Infineon Technologies Ag Input match network for a power circuit
US9373577B2 (en) * 2013-05-21 2016-06-21 Infineon Technologies Ag Hybrid semiconductor package
US9240390B2 (en) 2013-06-27 2016-01-19 Freescale Semiconductor, Inc. Semiconductor packages having wire bond wall to reduce coupling
KR101601829B1 (ko) * 2014-08-25 2016-03-10 알에프에이치아이씨 주식회사 고출력 반도체 소자 패키지
CN106470014B (zh) 2015-08-17 2019-10-18 恩智浦美国有限公司 具有谐波防止电路的输出阻抗匹配网络
US10110185B2 (en) * 2016-09-16 2018-10-23 Kabushiki Kaisha Toshiba Microwave semiconductor device
JP7136524B2 (ja) * 2018-07-11 2022-09-13 住友電工デバイス・イノベーション株式会社 半導体増幅器
US12476194B2 (en) 2021-01-06 2025-11-18 Mediatek Singapore Pte. Ltd. Semiconductor structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4193083A (en) 1977-01-07 1980-03-11 Varian Associates, Inc. Package for push-pull semiconductor devices
DE3067917D1 (en) 1979-03-10 1984-06-28 Fujitsu Ltd Constructional arrangement for semiconductor devices
US4393392A (en) 1980-06-23 1983-07-12 Power Hybrids, Incorporated Hybrid transistor
JPS6213041A (ja) 1985-07-10 1987-01-21 Mitsubishi Electric Corp 高周波高出力トランジスタ
JPH03138953A (ja) 1989-10-23 1991-06-13 Nec Corp 高周波高出力トランジスタ
JP2864841B2 (ja) 1992-02-04 1999-03-08 三菱電機株式会社 高周波高出力トランジスタ
US5309014A (en) 1992-04-02 1994-05-03 Motorola Inc. Transistor package
US5917705A (en) * 1994-04-27 1999-06-29 Siemens Aktiengesellschaft Chip card
US5602421A (en) 1995-01-31 1997-02-11 Hughes Aircraft Company Microwave monolithic integrated circuit package with improved RF ports
US6025277A (en) * 1997-05-07 2000-02-15 United Microelectronics Corp. Method and structure for preventing bonding pad peel back

Also Published As

Publication number Publication date
EP1145314A1 (de) 2001-10-17
US6177834B1 (en) 2001-01-23
CN1211858C (zh) 2005-07-20
WO2000033378A1 (en) 2000-06-08
DE69934717D1 (de) 2007-02-15
HK1043248A1 (zh) 2002-09-06
AU1745100A (en) 2000-06-19
CN1329754A (zh) 2002-01-02
JP2002531948A (ja) 2002-09-24
DE69934717T2 (de) 2007-10-18
EP1145314B1 (de) 2007-01-03
CA2353473A1 (en) 2000-06-08
KR20010080542A (ko) 2001-08-22

Similar Documents

Publication Publication Date Title
ATE350767T1 (de) Leistungstransistoranordnung höher frequenz
CN100459121C (zh) 具内部偏馈射频功率晶体管
US7372334B2 (en) Output match transistor
EP2463905B1 (de) Gekapselter HF Transistor mit speziellen Spannungsversorgungsanschlüssen
US6614311B2 (en) Micro-wave power amplifier
US11245386B2 (en) High-frequency module
US11652461B2 (en) Transistor level input and output harmonic terminations
EP3460843B1 (de) Transistor mit abschirmstruktur, verpackte vorrichtung und verfahren zur herstellung
JP2015015496A (ja) 高周波半導体装置
US9214903B2 (en) Amplifier
US9503030B2 (en) Radio frequency power amplifier
US20180316315A1 (en) Power amplifier
EP2509105A1 (de) Halbleiterbauelement mit verbesserter Leistung für hohe HF-Ausgangsleistungen
KR100369086B1 (ko) 콤팩트하이브리드마이크로웨이브쵸크
EP0081396A2 (de) Mikrowellen-Feldeffekttransistor
EP4325721A1 (de) Packungsstruktur für signalverstärkung und signalverstärker
US4267520A (en) Hybrid component for very high frequency amplification
JP2014096497A (ja) 半導体装置
JP2010021961A (ja) 増幅器
WO1999027646A1 (fr) Dispositif a circuit amplificateur a haute frequence et systeme de transmission a haute frequence comprenant ce dispositif
JP2014207332A (ja) 電界効果トランジスタおよび高周波増幅回路
EP0612142A2 (de) RF Transistor mit einem Trap für Harmonische
JPH03121606A (ja) マイクロ波ミリ波高出力トランジスタ
KR101059628B1 (ko) 배선 간섭이 억제된 송신 모듈
JPH0621705A (ja) 半導体装置

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties