ATE352520T1 - Siliziumnanoteilchen und verfahren zur herstellung derselben - Google Patents

Siliziumnanoteilchen und verfahren zur herstellung derselben

Info

Publication number
ATE352520T1
ATE352520T1 AT00992225T AT00992225T ATE352520T1 AT E352520 T1 ATE352520 T1 AT E352520T1 AT 00992225 T AT00992225 T AT 00992225T AT 00992225 T AT00992225 T AT 00992225T AT E352520 T1 ATE352520 T1 AT E352520T1
Authority
AT
Austria
Prior art keywords
nanoparticles
silicon
producing
colloids
crystals
Prior art date
Application number
AT00992225T
Other languages
English (en)
Inventor
Munir H Nayfeh
Joel Therrien
Zain H Yamani
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Illinois filed Critical Univ Illinois
Application granted granted Critical
Publication of ATE352520T1 publication Critical patent/ATE352520T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds
    • H01S5/3031—Si

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT00992225T 1999-10-22 2000-10-20 Siliziumnanoteilchen und verfahren zur herstellung derselben ATE352520T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/426,389 US6585947B1 (en) 1999-10-22 1999-10-22 Method for producing silicon nanoparticles

Publications (1)

Publication Number Publication Date
ATE352520T1 true ATE352520T1 (de) 2007-02-15

Family

ID=23690605

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00992225T ATE352520T1 (de) 1999-10-22 2000-10-20 Siliziumnanoteilchen und verfahren zur herstellung derselben

Country Status (8)

Country Link
US (2) US6585947B1 (de)
EP (1) EP1232116B1 (de)
JP (1) JP2003515459A (de)
AT (1) ATE352520T1 (de)
AU (1) AU3967801A (de)
CA (1) CA2388815C (de)
DE (1) DE60033170D1 (de)
WO (1) WO2001038222A1 (de)

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DE60033170D1 (de) 2007-03-15
US6846474B2 (en) 2005-01-25
WO2001038222A8 (en) 2001-09-13
CA2388815A1 (en) 2001-05-31
US20030170162A1 (en) 2003-09-11
US6585947B1 (en) 2003-07-01
WO2001038222A1 (en) 2001-05-31
EP1232116B1 (de) 2007-01-24
EP1232116A1 (de) 2002-08-21
JP2003515459A (ja) 2003-05-07
EP1232116A4 (de) 2005-04-20
CA2388815C (en) 2007-07-03

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