ATE353472T1 - Plasmabehandlungsvorrichtung und -verfahren - Google Patents

Plasmabehandlungsvorrichtung und -verfahren

Info

Publication number
ATE353472T1
ATE353472T1 AT00982118T AT00982118T ATE353472T1 AT E353472 T1 ATE353472 T1 AT E353472T1 AT 00982118 T AT00982118 T AT 00982118T AT 00982118 T AT00982118 T AT 00982118T AT E353472 T1 ATE353472 T1 AT E353472T1
Authority
AT
Austria
Prior art keywords
plasma processing
substrate
plasma
chamber
processing chamber
Prior art date
Application number
AT00982118T
Other languages
English (en)
Inventor
Andrew D Bailey Iii
Alan M Schoepp
David J Hemker
Mark H Wilcoxson
Andras Kuthi
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE353472T1 publication Critical patent/ATE353472T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
AT00982118T 1999-11-15 2000-11-14 Plasmabehandlungsvorrichtung und -verfahren ATE353472T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/439,661 US6341574B1 (en) 1999-11-15 1999-11-15 Plasma processing systems

Publications (1)

Publication Number Publication Date
ATE353472T1 true ATE353472T1 (de) 2007-02-15

Family

ID=23745623

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00982118T ATE353472T1 (de) 1999-11-15 2000-11-14 Plasmabehandlungsvorrichtung und -verfahren

Country Status (10)

Country Link
US (1) US6341574B1 (de)
EP (1) EP1230666B1 (de)
JP (1) JP4704645B2 (de)
KR (1) KR100768019B1 (de)
CN (1) CN1253918C (de)
AT (1) ATE353472T1 (de)
AU (1) AU1918801A (de)
DE (1) DE60033312T2 (de)
TW (1) TW478297B (de)
WO (1) WO2001037315A1 (de)

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100745495B1 (ko) * 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 반도체 제조방법 및 반도체 제조장치
US6518705B2 (en) 1999-11-15 2003-02-11 Lam Research Corporation Method and apparatus for producing uniform process rates
US6322661B1 (en) 1999-11-15 2001-11-27 Lam Research Corporation Method and apparatus for controlling the volume of a plasma
US6320320B1 (en) 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
US6744213B2 (en) * 1999-11-15 2004-06-01 Lam Research Corporation Antenna for producing uniform process rates
AU1606101A (en) * 1999-11-15 2001-05-30 Lam Research Corporation Materials and gas chemistries for processing systems
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US7067034B2 (en) * 2000-03-27 2006-06-27 Lam Research Corporation Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
US7166524B2 (en) * 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US20070042580A1 (en) * 2000-08-10 2007-02-22 Amir Al-Bayati Ion implanted insulator material with reduced dielectric constant
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7479456B2 (en) * 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US20050230047A1 (en) * 2000-08-11 2005-10-20 Applied Materials, Inc. Plasma immersion ion implantation apparatus
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US7320734B2 (en) * 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7303982B2 (en) * 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7465478B2 (en) * 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7288491B2 (en) * 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7137354B2 (en) * 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7183177B2 (en) * 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US6633132B2 (en) * 2001-01-23 2003-10-14 Wafermasters Inc. Plasma gereration apparatus and method
DE10147998A1 (de) * 2001-09-28 2003-04-10 Unaxis Balzers Ag Verfahren und Vorrichtung zur Erzeugung eines Plasmas
JP2003323997A (ja) * 2002-04-30 2003-11-14 Lam Research Kk プラズマ安定化方法およびプラズマ装置
US20030230385A1 (en) * 2002-06-13 2003-12-18 Applied Materials, Inc. Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US6842147B2 (en) * 2002-07-22 2005-01-11 Lam Research Corporation Method and apparatus for producing uniform processing rates
KR100465907B1 (ko) * 2002-09-26 2005-01-13 학교법인 성균관대학 자장이 인가된 내장형 선형 안테나를 구비하는 대면적처리용 유도 결합 플라즈마 소오스
KR100421249B1 (ko) * 2002-11-19 2004-03-04 박장식 스퍼트링 자기회로 제작
US6876155B2 (en) * 2002-12-31 2005-04-05 Lam Research Corporation Plasma processor apparatus and method, and antenna
US7355687B2 (en) * 2003-02-20 2008-04-08 Hunter Engineering Company Method and apparatus for vehicle service system with imaging components
US7022611B1 (en) 2003-04-28 2006-04-04 Lam Research Corporation Plasma in-situ treatment of chemically amplified resist
KR100523851B1 (ko) * 2003-05-07 2005-10-27 학교법인 성균관대학 대면적처리용 내장형 선형안테나를 구비하는 유도결합플라즈마 처리장치
US8974630B2 (en) * 2003-05-07 2015-03-10 Sungkyunkwan University Inductively coupled plasma processing apparatus having internal linear antenna for large area processing
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
US7190119B2 (en) * 2003-11-07 2007-03-13 Lam Research Corporation Methods and apparatus for optimizing a substrate in a plasma processing system
US20050211171A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US20050211546A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma process using an ion shower grid
US7695590B2 (en) * 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7291360B2 (en) * 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US7527713B2 (en) * 2004-05-26 2009-05-05 Applied Materials, Inc. Variable quadruple electromagnet array in plasma processing
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
JP2006073790A (ja) * 2004-09-02 2006-03-16 Tokyo Institute Of Technology プラズマエッチング装置
US7666464B2 (en) * 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US7428915B2 (en) * 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US20060260545A1 (en) * 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7422775B2 (en) * 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) * 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7335611B2 (en) * 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7429532B2 (en) * 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7323401B2 (en) * 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7312148B2 (en) * 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7704887B2 (en) * 2005-11-22 2010-04-27 Applied Materials, Inc. Remote plasma pre-clean with low hydrogen pressure
US7800082B2 (en) * 2006-02-15 2010-09-21 Varian Semiconductor Equipment Associates, Inc. Electromagnet with active field containment
KR20090106617A (ko) * 2007-01-19 2009-10-09 어플라이드 머티어리얼스, 인코포레이티드 플라스마 함침 챔버
JP5097074B2 (ja) * 2008-09-30 2012-12-12 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5410950B2 (ja) * 2009-01-15 2014-02-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101285265B1 (ko) * 2009-02-06 2013-07-12 캐논 아네르바 가부시키가이샤 플라즈마 처리장치, 플라즈마 처리방법 및 피처리 기판을 포함한 소자 제조방법
US20120021136A1 (en) * 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. System and method for controlling plasma deposition uniformity
CN103081073B (zh) * 2010-11-30 2015-12-02 佳能安内华股份有限公司 等离子体处理设备
CN102354798A (zh) * 2011-08-17 2012-02-15 华南理工大学 一种磁控波束可变的等离子体天线阵列
US9728416B2 (en) 2011-09-30 2017-08-08 Tokyo Electron Limited Plasma tuning rods in microwave resonator plasma sources
US9111727B2 (en) 2011-09-30 2015-08-18 Tokyo Electron Limited Plasma tuning rods in microwave resonator plasma sources
US8808496B2 (en) 2011-09-30 2014-08-19 Tokyo Electron Limited Plasma tuning rods in microwave processing systems
US9396955B2 (en) 2011-09-30 2016-07-19 Tokyo Electron Limited Plasma tuning rods in microwave resonator processing systems
WO2014069094A1 (ja) 2012-11-02 2014-05-08 キヤノンアネルバ株式会社 半導体装置の製造方法、イオンビームエッチング装置及び制御装置
CN103839742A (zh) * 2012-11-28 2014-06-04 中微半导体设备(上海)有限公司 用于等离子体处理器的磁场分布调节装置及其调节方法
JP6008771B2 (ja) * 2013-01-21 2016-10-19 東京エレクトロン株式会社 多層膜をエッチングする方法
KR101629214B1 (ko) * 2013-11-29 2016-06-13 서울대학교산학협력단 자장 제어를 통한 플라즈마 쉐이핑이 가능한 플라즈마 처리 장치
JP6126155B2 (ja) * 2015-03-31 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
KR101881534B1 (ko) * 2016-02-04 2018-07-24 주식회사 테스 플라즈마를 이용한 금속산화물이 포함된 탄소막의 형성 방법
JP7091196B2 (ja) 2018-09-04 2022-06-27 キオクシア株式会社 プラズマ処理装置および半導体装置の製造方法
CN116171651A (zh) * 2020-09-18 2023-05-26 朗姆研究公司 使用磁场的等离子体放电均匀性控制
US12525458B2 (en) * 2020-11-20 2026-01-13 Lam Research Corporation Plasma uniformity control using a pulsed magnetic field
CN117457463A (zh) * 2022-07-18 2024-01-26 中微半导体设备(上海)股份有限公司 一种电感耦合等离子处理设备及电感耦合线圈组件
TW202431328A (zh) * 2022-09-30 2024-08-01 日商東京威力科創股份有限公司 電漿處理裝置
CN119208119A (zh) * 2023-06-25 2024-12-27 Oppo广东移动通信有限公司 刻蚀装置和刻蚀工艺

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920002864B1 (ko) 1987-07-20 1992-04-06 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리방법 및 그 장치
GB8905075D0 (en) 1989-03-06 1989-04-19 Nordiko Ltd Electrode assembly and apparatus
US5032205A (en) 1989-05-05 1991-07-16 Wisconsin Alumni Research Foundation Plasma etching apparatus with surface magnetic fields
US5429070A (en) 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4990229A (en) 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5421891A (en) 1989-06-13 1995-06-06 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5122251A (en) 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5091049A (en) 1989-06-13 1992-02-25 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JP3126405B2 (ja) 1991-04-30 2001-01-22 株式会社日立製作所 スパッタデポジション装置
JPH05267237A (ja) 1992-03-23 1993-10-15 Nippon Telegr & Teleph Corp <Ntt> プラズマ・ダメージ低減法およびプラズマ処理装置
US5226967A (en) 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
JPH06251896A (ja) * 1992-12-28 1994-09-09 Hitachi Ltd プラズマ処理方法及び装置
US5401350A (en) 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
FR2707449B1 (fr) * 1993-07-05 1995-08-11 Cit Alcatel Réacteur à plasma pour un procédé de dépôt ou de gravure.
JP3365067B2 (ja) * 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
US5587038A (en) 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
US5540800A (en) 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5811022A (en) 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US6022446A (en) 1995-08-21 2000-02-08 Shan; Hongching Shallow magnetic fields for generating circulating electrons to enhance plasma processing
US5810932A (en) * 1995-11-22 1998-09-22 Nec Corporation Plasma generating apparatus used for fabrication of semiconductor device
TW303480B (en) 1996-01-24 1997-04-21 Applied Materials Inc Magnetically confined plasma reactor for processing a semiconductor wafer
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5669975A (en) 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
JP3655966B2 (ja) * 1996-06-28 2005-06-02 株式会社アルバック プラズマ発生装置
JP3666999B2 (ja) * 1996-07-26 2005-06-29 アネルバ株式会社 プラズマ処理装置
JP3940465B2 (ja) * 1997-05-14 2007-07-04 株式会社アルバック 反応性イオンエッチング装置
US6189484B1 (en) * 1999-03-05 2001-02-20 Applied Materials Inc. Plasma reactor having a helicon wave high density plasma source

Also Published As

Publication number Publication date
EP1230666B1 (de) 2007-02-07
KR20020060969A (ko) 2002-07-19
US6341574B1 (en) 2002-01-29
WO2001037315A1 (en) 2001-05-25
KR100768019B1 (ko) 2007-10-18
DE60033312T2 (de) 2007-11-22
TW478297B (en) 2002-03-01
EP1230666A1 (de) 2002-08-14
AU1918801A (en) 2001-05-30
CN1253918C (zh) 2006-04-26
CN1421043A (zh) 2003-05-28
JP4704645B2 (ja) 2011-06-15
DE60033312D1 (de) 2007-03-22
JP2003514389A (ja) 2003-04-15

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