ATE452421T1 - Plasmaverarbeitungsvorrichtung und plasmaverarbeitungsverfahren - Google Patents

Plasmaverarbeitungsvorrichtung und plasmaverarbeitungsverfahren

Info

Publication number
ATE452421T1
ATE452421T1 AT04745450T AT04745450T ATE452421T1 AT E452421 T1 ATE452421 T1 AT E452421T1 AT 04745450 T AT04745450 T AT 04745450T AT 04745450 T AT04745450 T AT 04745450T AT E452421 T1 ATE452421 T1 AT E452421T1
Authority
AT
Austria
Prior art keywords
plasma
plasma processing
processing
processing apparatus
processing target
Prior art date
Application number
AT04745450T
Other languages
English (en)
Inventor
Toshihisa Nozawa
Kiyotaka Ishibashi
Toshio Nakanishi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE452421T1 publication Critical patent/ATE452421T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Plasma Technology (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Physical Vapour Deposition (AREA)
AT04745450T 2003-05-29 2004-05-31 Plasmaverarbeitungsvorrichtung und plasmaverarbeitungsverfahren ATE452421T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003152808 2003-05-29
PCT/JP2004/007485 WO2004107430A1 (ja) 2003-05-29 2004-05-31 プラズマ処理装置およびプラズマ処理方法

Publications (1)

Publication Number Publication Date
ATE452421T1 true ATE452421T1 (de) 2010-01-15

Family

ID=33487270

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04745450T ATE452421T1 (de) 2003-05-29 2004-05-31 Plasmaverarbeitungsvorrichtung und plasmaverarbeitungsverfahren

Country Status (9)

Country Link
US (1) US20060156984A1 (de)
EP (1) EP1632994B1 (de)
JP (2) JP4615442B2 (de)
KR (2) KR100921871B1 (de)
CN (1) CN1799127B (de)
AT (1) ATE452421T1 (de)
DE (1) DE602004024675D1 (de)
TW (1) TW200511430A (de)
WO (1) WO2004107430A1 (de)

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US8318554B2 (en) 2005-04-28 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of forming gate insulating film for thin film transistors using plasma oxidation
JP5183910B2 (ja) * 2005-11-23 2013-04-17 株式会社半導体エネルギー研究所 半導体素子の作製方法
US7625783B2 (en) 2005-11-23 2009-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
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JP2007250569A (ja) * 2006-03-13 2007-09-27 Tokyo Electron Ltd プラズマ処理装置およびプラズマに曝される部材
JP2007273189A (ja) * 2006-03-30 2007-10-18 Tokyo Electron Ltd プラズマ処理装置，基板処理システムおよび電力切替方法
US7443175B2 (en) * 2006-07-14 2008-10-28 Covidien Ag Surgical testing instrument and system
US7914692B2 (en) 2006-08-29 2011-03-29 Ngk Insulators, Ltd. Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding
JP4864661B2 (ja) * 2006-11-22 2012-02-01 東京エレクトロン株式会社 太陽電池の製造方法及び太陽電池の製造装置
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WO2009104379A1 (ja) * 2008-02-18 2009-08-27 三井造船株式会社 原子層成長装置および原子層成長方法
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WO2010151337A1 (en) * 2009-06-26 2010-12-29 Tokyo Electron Limited Improving the adhesiveness of fluorocarbon(cfx) film by doping of amorphous carbon
JP5839804B2 (ja) 2011-01-25 2016-01-06 国立大学法人東北大学 半導体装置の製造方法、および半導体装置
TWI581304B (zh) * 2011-07-27 2017-05-01 日立全球先端科技股份有限公司 Plasma etching apparatus and dry etching method
US9301383B2 (en) 2012-03-30 2016-03-29 Tokyo Electron Limited Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
US9942950B2 (en) * 2012-08-06 2018-04-10 Goji Limited Method for detecting dark discharge and device utilizing the method
JP5841917B2 (ja) * 2012-08-24 2016-01-13 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
CN103035470B (zh) * 2012-12-14 2016-02-17 中微半导体设备(上海)有限公司 半导体刻蚀装置及半导体刻蚀方法
JP6861479B2 (ja) * 2016-06-24 2021-04-21 東京エレクトロン株式会社 プラズマ成膜方法およびプラズマ成膜装置
KR102217171B1 (ko) * 2018-07-30 2021-02-17 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
JP2025085400A (ja) * 2023-11-24 2025-06-05 東京エレクトロン株式会社 基板処理装置

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JP4001498B2 (ja) * 2002-03-29 2007-10-31 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜の形成システム
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JP4408653B2 (ja) * 2003-05-30 2010-02-03 東京エレクトロン株式会社 基板処理方法および半導体装置の製造方法
CN102181819A (zh) * 2004-03-03 2011-09-14 东京毅力科创株式会社 等离子体氮化处理方法
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Also Published As

Publication number Publication date
EP1632994A4 (de) 2007-06-13
TWI300248B (de) 2008-08-21
EP1632994B1 (de) 2009-12-16
WO2004107430A1 (ja) 2004-12-09
DE602004024675D1 (de) 2010-01-28
CN1799127B (zh) 2012-06-27
JP2010192934A (ja) 2010-09-02
KR20080015056A (ko) 2008-02-15
KR100843018B1 (ko) 2008-07-01
TW200511430A (en) 2005-03-16
KR20060036053A (ko) 2006-04-27
KR100921871B1 (ko) 2009-10-13
JP5261436B2 (ja) 2013-08-14
JP4615442B2 (ja) 2011-01-19
CN1799127A (zh) 2006-07-05
EP1632994A1 (de) 2006-03-08
US20060156984A1 (en) 2006-07-20
JPWO2004107430A1 (ja) 2006-07-20

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