ATE476536T1 - Suszeptorsystem - Google Patents

Suszeptorsystem

Info

Publication number
ATE476536T1
ATE476536T1 AT02808222T AT02808222T ATE476536T1 AT E476536 T1 ATE476536 T1 AT E476536T1 AT 02808222 T AT02808222 T AT 02808222T AT 02808222 T AT02808222 T AT 02808222T AT E476536 T1 ATE476536 T1 AT E476536T1
Authority
AT
Austria
Prior art keywords
susceptor
susceptor element
delimited
treatment chamber
susceptor system
Prior art date
Application number
AT02808222T
Other languages
English (en)
Inventor
Giacomo Maccalli
Olle Kordina
Gianluca Valente
Danilo Crippa
Franco Preti
Original Assignee
E T C Epitaxial Technology Ct
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E T C Epitaxial Technology Ct filed Critical E T C Epitaxial Technology Ct
Application granted granted Critical
Publication of ATE476536T1 publication Critical patent/ATE476536T1/de

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details specially adapted for crucible or pot furnaces
    • F27B14/14—Arrangements of heating devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
    • F27B14/061—Induction furnaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Gripping On Spindles (AREA)
  • Catalysts (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
AT02808222T 2002-12-10 2002-12-10 Suszeptorsystem ATE476536T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IT2002/000773 WO2004053187A1 (en) 2002-12-10 2002-12-10 Susceptor system________________________

Publications (1)

Publication Number Publication Date
ATE476536T1 true ATE476536T1 (de) 2010-08-15

Family

ID=32500472

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02808222T ATE476536T1 (de) 2002-12-10 2002-12-10 Suszeptorsystem

Country Status (8)

Country Link
US (1) US7488922B2 (de)
EP (1) EP1570107B1 (de)
JP (1) JP4423205B2 (de)
CN (1) CN100507073C (de)
AT (1) ATE476536T1 (de)
AU (1) AU2002368438A1 (de)
DE (1) DE60237240D1 (de)
WO (1) WO2004053187A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002368439A1 (en) * 2002-12-10 2004-06-30 Etc Srl Susceptor system
ATE476536T1 (de) * 2002-12-10 2010-08-15 E T C Epitaxial Technology Ct Suszeptorsystem
EP1651802B1 (de) * 2004-06-09 2011-03-09 E.T.C. Epitaxial Technology Center SRL Halterungssystem für behandlungsapparaturen
DE102004062553A1 (de) * 2004-12-24 2006-07-06 Aixtron Ag CVD-Reaktor mit RF-geheizter Prozesskammer
ITMI20052498A1 (it) * 2005-12-28 2007-06-29 Lpe Spa Camera di reazione a temperatura differenziata
KR20130107001A (ko) * 2012-03-21 2013-10-01 엘지이노텍 주식회사 증착 장치
ITCO20130073A1 (it) 2013-12-19 2015-06-20 Lpe Spa Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore
WO2016001863A1 (en) 2014-07-03 2016-01-07 Lpe S.P.A. Tool for manipulating substrates, manipulation method and epitaxial reactor
EP3337344B1 (de) * 2015-08-17 2019-06-05 Philip Morris Products S.a.s. Aerosolerzeugungssystem und aerosolerzeugungsartikel zur verwendung in solch einem system
US10407769B2 (en) * 2016-03-18 2019-09-10 Goodrich Corporation Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces
CN107435165A (zh) * 2016-05-26 2017-12-05 北京北方华创微电子装备有限公司 一种外延反应腔和化学气相外延设备
US10947640B1 (en) * 2016-12-02 2021-03-16 Svagos Technik, Inc. CVD reactor chamber with resistive heating for silicon carbide deposition
WO2019234245A1 (en) * 2018-06-07 2019-12-12 Philip Morris Products S.A. An aerosol generating system, aerosol forming device and a cartridge therefor
IT201800011158A1 (it) * 2018-12-17 2020-06-17 Lpe Spa Camera di reazione per un reattore epitassiale di materiale semiconduttore con sezione longitudinale non-uniforme e reattore
EP4022239A1 (de) 2019-10-03 2022-07-06 LPE S.p.A. Behandlungsanordnung mit lade-/entladegruppe und epitaxialreaktor
WO2021064650A1 (en) 2019-10-03 2021-04-08 Lpe S.P.A. Treating arrangement with transfer chamber and epitaxial reactor
EP4022240A1 (de) 2019-10-03 2022-07-06 LPE S.p.A. Behandlungsanordnung mit speicherkammer und epitaxialreaktor
IT201900022047A1 (it) * 2019-11-25 2021-05-25 Lpe Spa Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale
CN111172587A (zh) * 2020-02-25 2020-05-19 深圳市纳设智能装备有限公司 一种外延生长设备的反应室结构
IT202000021517A1 (it) 2020-09-11 2022-03-11 Lpe Spa Metodo per deposizione cvd di carburo di silicio con drogaggio di tipo n e reattore epitassiale
EP4287890A1 (de) * 2021-02-02 2023-12-13 JT International SA Heizvorrichtung für eine aerosolerzeugungsvorrichtung
IT202300018780A1 (it) 2023-09-13 2025-03-13 Lpe Spa Reattore per deposizione epitassiale di materiale semiconduttore su substrati con slitta scorrevole per camera di reazione
IT202300023547A1 (it) 2023-11-08 2025-05-08 Lpe Spa Reattore raffreddamento rapido per deposizione epitassiale di film semiconduttori
IT202300024663A1 (it) 2023-11-21 2025-05-21 Lpe Spa Sistema di automazione per unità di reazione removibile di un reattore epitassiale
TW202538914A (zh) 2023-11-21 2025-10-01 義大利商Ｌｐｅ股份有限公司 多腔室總成及反應器總成
IT202300024660A1 (it) 2023-11-21 2025-05-21 Lpe Spa Reattore con unità di reazione rimovibile
TW202536258A (zh) 2023-11-21 2025-09-16 義大利商Ｌｐｅ股份有限公司 反應腔室、反應器、反應器總成、及用於預防維護之方法
US20260009154A1 (en) 2024-07-05 2026-01-08 Lpe S.P.A Reaction chamber assembly
CN121693021A (zh) 2024-09-12 2026-03-17 Lpe公司 来自反应室部分的碳化硅膜的光子辅助化学蚀刻

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1458222A (en) 1973-03-12 1976-12-08 Electricity Council Furnaces for the production of tubular or cyclindrical ceramic articles
US3980854A (en) * 1974-11-15 1976-09-14 Rca Corporation Graphite susceptor structure for inductively heating semiconductor wafers
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
FR2596070A1 (fr) * 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan
FR2650841A1 (fr) 1989-08-11 1991-02-15 Thomson Tubes Electroniques Dispositif de depot d'un materiau sur un support thermiquement conducteur
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5106204A (en) * 1991-03-25 1992-04-21 Dunham James L High unit load gas bearing
US5226383A (en) * 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
US5221356A (en) * 1992-10-08 1993-06-22 Northern Telecom Limited Apparatus for manufacturing semiconductor wafers
SE9500326D0 (sv) * 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
SE9600705D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5788777A (en) * 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
DE10055033A1 (de) * 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
DE10055182A1 (de) 2000-11-08 2002-05-29 Aixtron Ag CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
DE10056029A1 (de) * 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
US6569250B2 (en) * 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
DE10132448A1 (de) * 2001-07-04 2003-01-23 Aixtron Ag CVD-Vorrichtung mit differenziert temperiertem Substrathalter
ITMI20020306A1 (it) 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
AU2002368439A1 (en) 2002-12-10 2004-06-30 Etc Srl Susceptor system
ATE476536T1 (de) * 2002-12-10 2010-08-15 E T C Epitaxial Technology Ct Suszeptorsystem
EP1651802B1 (de) * 2004-06-09 2011-03-09 E.T.C. Epitaxial Technology Center SRL Halterungssystem für behandlungsapparaturen

Also Published As

Publication number Publication date
AU2002368438A1 (en) 2004-06-30
JP2006509362A (ja) 2006-03-16
US20060081187A1 (en) 2006-04-20
CN1708601A (zh) 2005-12-14
CN100507073C (zh) 2009-07-01
WO2004053187A1 (en) 2004-06-24
EP1570107B1 (de) 2010-08-04
DE60237240D1 (de) 2010-09-16
JP4423205B2 (ja) 2010-03-03
US7488922B2 (en) 2009-02-10
EP1570107A1 (de) 2005-09-07

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties