ATE353475T1 - Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche - Google Patents
Verfahren und vorrichtung zur herstellung einer haftenden substratoberflächeInfo
- Publication number
- ATE353475T1 ATE353475T1 AT02292517T AT02292517T ATE353475T1 AT E353475 T1 ATE353475 T1 AT E353475T1 AT 02292517 T AT02292517 T AT 02292517T AT 02292517 T AT02292517 T AT 02292517T AT E353475 T1 ATE353475 T1 AT E353475T1
- Authority
- AT
- Austria
- Prior art keywords
- producing
- substrate surface
- adhesive surface
- substrate
- adhesive substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0422—Apparatus for fluid treatment for etching for wet etching
- H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/18—Cleaning before device manufacture, i.e. Begin-Of-Line process by combined dry cleaning and wet cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
Landscapes
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02292517A EP1408534B1 (de) | 2002-10-11 | 2002-10-11 | Verfahren und Vorrichtung zur Herstellung einer haftenden Substratoberfläche |
| US46592303P | 2003-04-24 | 2003-04-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE353475T1 true ATE353475T1 (de) | 2007-02-15 |
Family
ID=32773620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02292517T ATE353475T1 (de) | 2002-10-11 | 2002-10-11 | Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20040069321A1 (de) |
| EP (1) | EP1408534B1 (de) |
| JP (1) | JP2004200653A (de) |
| AT (1) | ATE353475T1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070197982A1 (en) * | 2006-01-05 | 2007-08-23 | Scott Thomason | Automatic body spray system |
| US20100129557A1 (en) * | 2004-06-18 | 2010-05-27 | Mt Industries, Inc. | Spray coating at least one portion of a subject |
| US20050279865A1 (en) * | 2004-06-18 | 2005-12-22 | Innovative Developments, Llc | Fluid spraying system |
| US8920391B2 (en) * | 2004-06-18 | 2014-12-30 | Sunless, Inc. | Container for system for spray coating human subject |
| JP5317529B2 (ja) * | 2008-05-02 | 2013-10-16 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体ウェーハの処理方法及び処理装置 |
| KR101492467B1 (ko) * | 2008-08-20 | 2015-02-11 | 에이씨엠 리서치 (상하이) 인코포레이티드 | 베리어층 제거 방법 및 장치 |
| DE102008061521B4 (de) * | 2008-12-10 | 2011-12-08 | Siltronic Ag | Verfahren zur Behandlung einer Halbleiterscheibe |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
| EP2390925A1 (de) * | 2010-05-31 | 2011-11-30 | Applied Materials, Inc. | Herstellungsverfahren für Dünnfilmsolarzelle, Ätzverfahren, Vorrichtung zum Ätzen und Dünnfilmsolarvorrichtung |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5158100A (en) * | 1989-05-06 | 1992-10-27 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method and apparatus therefor |
| JP2581268B2 (ja) * | 1990-05-22 | 1997-02-12 | 日本電気株式会社 | 半導体基板の処理方法 |
| JPH0719739B2 (ja) * | 1990-09-10 | 1995-03-06 | 信越半導体株式会社 | 接合ウェーハの製造方法 |
| US5464480A (en) * | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
| US5634978A (en) * | 1994-11-14 | 1997-06-03 | Yieldup International | Ultra-low particle semiconductor method |
| JPH08264500A (ja) * | 1995-03-27 | 1996-10-11 | Sony Corp | 基板の洗浄方法 |
| US5714203A (en) * | 1995-08-23 | 1998-02-03 | Ictop Entwicklungs Gmbh | Procedure for the drying of silicon |
| JPH0969509A (ja) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法 |
| US6058945A (en) * | 1996-05-28 | 2000-05-09 | Canon Kabushiki Kaisha | Cleaning methods of porous surface and semiconductor surface |
| JPH10144650A (ja) * | 1996-11-11 | 1998-05-29 | Mitsubishi Electric Corp | 半導体材料の洗浄装置 |
| US6027602A (en) * | 1997-08-29 | 2000-02-22 | Techpoint Pacific Singapore Pte. Ltd. | Wet processing apparatus |
| US20020157686A1 (en) * | 1997-05-09 | 2002-10-31 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US6240933B1 (en) * | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
| US20020066464A1 (en) * | 1997-05-09 | 2002-06-06 | Semitool, Inc. | Processing a workpiece using ozone and sonic energy |
| KR20010012709A (ko) * | 1997-06-13 | 2001-02-26 | 월터 알란 이. | 반도체 웨이퍼 처리방법 |
| US6423613B1 (en) * | 1998-11-10 | 2002-07-23 | Micron Technology, Inc. | Low temperature silicon wafer bond process with bulk material bond strength |
| DE19853486A1 (de) * | 1998-11-19 | 2000-05-31 | Wacker Siltronic Halbleitermat | Verfahren zur naßchemischen Behandlung von Halbleiterscheiben |
| US6240939B1 (en) * | 1999-03-22 | 2001-06-05 | Mcgee Charles P. | Windbreak |
| JP2000349081A (ja) * | 1999-06-07 | 2000-12-15 | Sony Corp | 酸化膜形成方法 |
| JP4344855B2 (ja) * | 1999-08-06 | 2009-10-14 | 野村マイクロ・サイエンス株式会社 | 電子デバイス用基板の有機汚染防止法及び有機汚染を防止した電子デバイス用基板 |
| US6286231B1 (en) * | 2000-01-12 | 2001-09-11 | Semitool, Inc. | Method and apparatus for high-pressure wafer processing and drying |
| US6492283B2 (en) * | 2000-02-22 | 2002-12-10 | Asm Microchemistry Oy | Method of forming ultrathin oxide layer |
| FR2806892B1 (fr) * | 2000-03-29 | 2002-06-14 | Oreal | Boitier du type boitier de maquillage comportant un couvercle articule |
| DE10036691A1 (de) * | 2000-07-27 | 2002-02-14 | Wacker Siltronic Halbleitermat | Verfahren zur chemischen Behandlung von Halbleiterscheiben |
| JP4914536B2 (ja) * | 2001-02-28 | 2012-04-11 | 東京エレクトロン株式会社 | 酸化膜形成方法 |
| US6821908B1 (en) * | 2001-09-10 | 2004-11-23 | Mia-Com Inc., | In-situ method for producing a hydrogen terminated hydrophobic surface on a silicon wafer |
| US20030087532A1 (en) * | 2001-11-01 | 2003-05-08 | Biao Wu | Integrated process for etching and cleaning oxide surfaces during the manufacture of microelectronic devices |
-
2002
- 2002-10-11 EP EP02292517A patent/EP1408534B1/de not_active Expired - Lifetime
- 2002-10-11 AT AT02292517T patent/ATE353475T1/de not_active IP Right Cessation
-
2003
- 2003-09-16 US US10/664,781 patent/US20040069321A1/en not_active Abandoned
- 2003-10-14 JP JP2003353888A patent/JP2004200653A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1408534A1 (de) | 2004-04-14 |
| JP2004200653A (ja) | 2004-07-15 |
| US20040069321A1 (en) | 2004-04-15 |
| EP1408534B1 (de) | 2007-02-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |