ATE493368T1 - Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur - Google Patents
Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-strukturInfo
- Publication number
- ATE493368T1 ATE493368T1 AT02707133T AT02707133T ATE493368T1 AT E493368 T1 ATE493368 T1 AT E493368T1 AT 02707133 T AT02707133 T AT 02707133T AT 02707133 T AT02707133 T AT 02707133T AT E493368 T1 ATE493368 T1 AT E493368T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- gas
- supply members
- gas supply
- silicon structure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Micromachines (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001096077 | 2001-03-29 | ||
| PCT/JP2002/002807 WO2002079080A1 (en) | 2001-03-29 | 2002-03-22 | Production device and production method for silicon-based structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE493368T1 true ATE493368T1 (de) | 2011-01-15 |
Family
ID=18950044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02707133T ATE493368T1 (de) | 2001-03-29 | 2002-03-22 | Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US20040094086A1 (de) |
| EP (1) | EP1382565B1 (de) |
| KR (1) | KR100565032B1 (de) |
| CN (1) | CN1263674C (de) |
| AT (1) | ATE493368T1 (de) |
| DE (1) | DE60238752D1 (de) |
| TW (1) | TWI251626B (de) |
| WO (1) | WO2002079080A1 (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60238752D1 (de) * | 2001-03-29 | 2011-02-10 | Toyota Chuo Kenkyusho Kk | Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur |
| US7813634B2 (en) | 2005-02-28 | 2010-10-12 | Tessera MEMS Technologies, Inc. | Autofocus camera |
| JP3882806B2 (ja) * | 2003-10-29 | 2007-02-21 | ソニー株式会社 | エッチング方法 |
| JP2005150332A (ja) * | 2003-11-14 | 2005-06-09 | Sony Corp | エッチング方法 |
| JP2005288672A (ja) * | 2004-04-06 | 2005-10-20 | Mitsubishi Heavy Ind Ltd | 微小構造体の製造方法及び製造装置 |
| JP2005288673A (ja) * | 2004-04-06 | 2005-10-20 | Mitsubishi Heavy Ind Ltd | 微小構造体の製造装置 |
| US7838322B1 (en) * | 2005-02-28 | 2010-11-23 | Tessera MEMS Technologies, Inc. | Method of enhancing an etch system |
| KR101101104B1 (ko) * | 2006-08-24 | 2012-01-03 | 다이킨 고교 가부시키가이샤 | 반도체 드라이 프로세스 후의 잔사 제거액 및 그것을 이용한 잔사 제거 방법 |
| JP5305993B2 (ja) * | 2008-05-02 | 2013-10-02 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子 |
| JP2010162629A (ja) * | 2009-01-14 | 2010-07-29 | Seiko Epson Corp | Ｍｅｍｓデバイスの製造方法 |
| JP5317826B2 (ja) * | 2009-05-19 | 2013-10-16 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法 |
| US20120244715A1 (en) * | 2009-12-02 | 2012-09-27 | Xactix, Inc. | High-selectivity etching system and method |
| JP5468133B2 (ja) * | 2010-05-14 | 2014-04-09 | パナソニック株式会社 | 固体撮像装置 |
| US8685778B2 (en) | 2010-06-25 | 2014-04-01 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
| US20120256333A1 (en) * | 2010-12-21 | 2012-10-11 | Toyota Motor Corporation | Process for manufacturing a stand-alone multilayer thin film |
| GB2487716B (en) * | 2011-01-24 | 2015-06-03 | Memsstar Ltd | Vapour Etch of Silicon Dioxide with Improved Selectivity |
| JP5875243B2 (ja) | 2011-04-06 | 2016-03-02 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
| JP2013057526A (ja) * | 2011-09-07 | 2013-03-28 | Seiko Epson Corp | 赤外線検出素子、赤外線検出素子の製造方法及び電子機器 |
| JP6532429B2 (ja) | 2016-06-01 | 2019-06-19 | 三菱電機株式会社 | 半導体圧力センサ |
| CN108847391B (zh) * | 2018-06-01 | 2021-06-08 | 北京北方华创微电子装备有限公司 | 一种非等离子干法刻蚀方法 |
| GB2598262B (en) * | 2019-11-14 | 2022-08-17 | Memsstar Ltd | Method of manufacturing a microstructure |
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| US38A (en) * | 1836-10-04 | Horizontal boot-clamp | ||
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| US10A (en) * | 1836-08-10 | Bariah Swift | Dye-wood and dye-stuff cutting and shaving machine | |
| US62A (en) * | 1836-10-20 | Cooking-stove | ||
| US11A (de) * | 1836-08-10 | |||
| US2A (en) * | 1826-12-15 | 1836-07-29 | John Goulding | Mode of manufacturing wool or other fibrous materials |
| US3A (en) * | 1836-08-01 | 1836-08-11 | Thomas Blanchard | Machine for turning and wooden sheaves and pins for ships' tackle blocks and pulleys |
| JPS3825061B1 (de) * | 1961-06-09 | 1963-11-26 | ||
| US4190488A (en) * | 1978-08-21 | 1980-02-26 | International Business Machines Corporation | Etching method using noble gas halides |
| JPS58130531A (ja) * | 1982-01-28 | 1983-08-04 | Nec Home Electronics Ltd | 薄膜エツチング方法 |
| JPH0770515B2 (ja) * | 1985-08-01 | 1995-07-31 | 株式会社東芝 | 表面処理方法 |
| WO1987001508A1 (en) * | 1985-08-28 | 1987-03-12 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
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| DE60238752D1 (de) * | 2001-03-29 | 2011-02-10 | Toyota Chuo Kenkyusho Kk | Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur |
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-
2002
- 2002-03-22 DE DE60238752T patent/DE60238752D1/de not_active Expired - Lifetime
- 2002-03-22 WO PCT/JP2002/002807 patent/WO2002079080A1/ja not_active Ceased
- 2002-03-22 CN CNB028036514A patent/CN1263674C/zh not_active Expired - Fee Related
- 2002-03-22 US US10/473,253 patent/US20040094086A1/en not_active Abandoned
- 2002-03-22 KR KR1020037012521A patent/KR100565032B1/ko not_active Expired - Fee Related
- 2002-03-22 AT AT02707133T patent/ATE493368T1/de not_active IP Right Cessation
- 2002-03-22 EP EP02707133A patent/EP1382565B1/de not_active Expired - Lifetime
- 2002-03-28 TW TW091106219A patent/TWI251626B/zh not_active IP Right Cessation
-
2008
- 2008-01-30 US US12/022,811 patent/US20080257497A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP1382565A1 (de) | 2004-01-21 |
| CN1484611A (zh) | 2004-03-24 |
| CN1263674C (zh) | 2006-07-12 |
| TWI251626B (en) | 2006-03-21 |
| EP1382565A4 (de) | 2005-11-16 |
| KR20040054611A (ko) | 2004-06-25 |
| WO2002079080A1 (en) | 2002-10-10 |
| KR100565032B1 (ko) | 2006-03-30 |
| US20040094086A1 (en) | 2004-05-20 |
| DE60238752D1 (de) | 2011-02-10 |
| US20080257497A1 (en) | 2008-10-23 |
| EP1382565B1 (de) | 2010-12-29 |
| HK1061836A1 (en) | 2004-10-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |