ATE354174T1 - Thermisches kontrollsystem für substrate - Google Patents
Thermisches kontrollsystem für substrateInfo
- Publication number
- ATE354174T1 ATE354174T1 AT01913112T AT01913112T ATE354174T1 AT E354174 T1 ATE354174 T1 AT E354174T1 AT 01913112 T AT01913112 T AT 01913112T AT 01913112 T AT01913112 T AT 01913112T AT E354174 T1 ATE354174 T1 AT E354174T1
- Authority
- AT
- Austria
- Prior art keywords
- thermal
- diffuser
- sink
- controllable
- substrates
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Control Of Temperature (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/519,963 US6472643B1 (en) | 2000-03-07 | 2000-03-07 | Substrate thermal management system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE354174T1 true ATE354174T1 (de) | 2007-03-15 |
Family
ID=24070603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01913112T ATE354174T1 (de) | 2000-03-07 | 2001-02-27 | Thermisches kontrollsystem für substrate |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6472643B1 (de) |
| EP (2) | EP1770759A3 (de) |
| JP (2) | JP2003526921A (de) |
| KR (1) | KR100752408B1 (de) |
| AT (1) | ATE354174T1 (de) |
| DE (1) | DE60126589T2 (de) |
| WO (1) | WO2001067505A2 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6414276B1 (en) | 2000-03-07 | 2002-07-02 | Silicon Valley Group, Inc. | Method for substrate thermal management |
| US6472643B1 (en) * | 2000-03-07 | 2002-10-29 | Silicon Valley Group, Inc. | Substrate thermal management system |
| US20050211385A1 (en) | 2001-04-30 | 2005-09-29 | Lam Research Corporation, A Delaware Corporation | Method and apparatus for controlling spatial temperature distribution |
| JP4549022B2 (ja) * | 2001-04-30 | 2010-09-22 | ラム リサーチ コーポレイション | ワーク支持体の表面を横切る空間温度分布を制御する方法および装置 |
| KR100479947B1 (ko) * | 2002-06-28 | 2005-03-30 | 참이앤티 주식회사 | 웨이퍼 가열장치 |
| US7846254B2 (en) * | 2003-05-16 | 2010-12-07 | Applied Materials, Inc. | Heat transfer assembly |
| KR20190002749A (ko) | 2003-07-28 | 2019-01-08 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
| EP1780772B1 (de) | 2004-07-12 | 2009-09-02 | Nikon Corporation | Belichtungsgerät und bauelemente-herstellungsverfahren |
| KR101230712B1 (ko) | 2004-08-03 | 2013-02-07 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| US20070190685A1 (en) * | 2006-02-10 | 2007-08-16 | Ralph Ebbutt | Cooling facility and method for integrated circuit |
| US7808227B2 (en) * | 2006-07-07 | 2010-10-05 | Univation Technologies, Llc | Systems and methods for detecting impurities in reactor systems |
| US7723648B2 (en) * | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
| US7838800B2 (en) * | 2006-09-25 | 2010-11-23 | Tokyo Electron Limited | Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system |
| CN101907899B (zh) * | 2010-08-03 | 2012-05-16 | 南京航空航天大学 | 自动铺放成型中预浸料红外辐射加热的动态温度控制方法 |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3783822A (en) * | 1972-05-10 | 1974-01-08 | J Wollam | Apparatus for use in deposition of films from a vapor phase |
| US4518848A (en) * | 1981-05-15 | 1985-05-21 | Gca Corporation | Apparatus for baking resist on semiconductor wafers |
| FR2631165B1 (fr) * | 1988-05-05 | 1992-02-21 | Moulene Daniel | Support conditionneur de temperature pour petits objets tels que des composants semi-conducteurs et procede de regulation thermique utilisant ce support |
| JPH06103670B2 (ja) * | 1989-04-04 | 1994-12-14 | 三菱電機株式会社 | 半導体ウェハ加熱装置 |
| US5151871A (en) * | 1989-06-16 | 1992-09-29 | Tokyo Electron Limited | Method for heat-processing semiconductor device and apparatus for the same |
| JPH0325882A (ja) * | 1989-06-23 | 1991-02-04 | Tokyo Erekutoron Kyushu Kk | 加熱装置 |
| JP2737010B2 (ja) * | 1989-08-01 | 1998-04-08 | キヤノン株式会社 | 露光装置 |
| US5001423A (en) * | 1990-01-24 | 1991-03-19 | International Business Machines Corporation | Dry interface thermal chuck temperature control system for semiconductor wafer testing |
| US5452177A (en) * | 1990-06-08 | 1995-09-19 | Varian Associates, Inc. | Electrostatic wafer clamp |
| US5252807A (en) | 1990-07-02 | 1993-10-12 | George Chizinsky | Heated plate rapid thermal processor |
| JPH05209278A (ja) * | 1992-01-30 | 1993-08-20 | Nec Corp | プラズマ気相成長装置 |
| US5624590A (en) * | 1993-04-02 | 1997-04-29 | Lucent Technologies, Inc. | Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique |
| US5595241A (en) | 1994-10-07 | 1997-01-21 | Sony Corporation | Wafer heating chuck with dual zone backplane heating and segmented clamping member |
| US5517594A (en) * | 1994-10-17 | 1996-05-14 | Relman, Inc. | Thermal reactor optimization |
| US5686779A (en) * | 1995-03-01 | 1997-11-11 | The United States Of America As Represented By The Secretary Of The Army | High sensitivity temperature sensor and sensor array |
| US5715361A (en) * | 1995-04-13 | 1998-02-03 | Cvc Products, Inc. | Rapid thermal processing high-performance multizone illuminator for wafer backside heating |
| US5551985A (en) * | 1995-08-18 | 1996-09-03 | Torrex Equipment Corporation | Method and apparatus for cold wall chemical vapor deposition |
| US5538758A (en) | 1995-10-27 | 1996-07-23 | Specialty Coating Systems, Inc. | Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers |
| US5775416A (en) | 1995-11-17 | 1998-07-07 | Cvc Products, Inc. | Temperature controlled chuck for vacuum processing |
| JPH09213781A (ja) * | 1996-02-01 | 1997-08-15 | Tokyo Electron Ltd | 載置台構造及びそれを用いた処理装置 |
| US5730803A (en) | 1996-02-23 | 1998-03-24 | Applied Materials, Inc. | Apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold body |
| JPH09260474A (ja) * | 1996-03-22 | 1997-10-03 | Sony Corp | 静電チャックおよびウエハステージ |
| US6046439A (en) * | 1996-06-17 | 2000-04-04 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
| US5885353A (en) * | 1996-06-21 | 1999-03-23 | Micron Technology, Inc. | Thermal conditioning apparatus |
| US5948283A (en) * | 1996-06-28 | 1999-09-07 | Lam Research Corporation | Method and apparatus for enhancing outcome uniformity of direct-plasma processes |
| US5802856A (en) * | 1996-07-31 | 1998-09-08 | Stanford University | Multizone bake/chill thermal cycling module |
| US5811762A (en) | 1996-09-25 | 1998-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heater assembly with dual temperature control for use in PVD/CVD system |
| US5954982A (en) * | 1997-02-12 | 1999-09-21 | Nikon Corporation | Method and apparatus for efficiently heating semiconductor wafers or reticles |
| US5855675A (en) * | 1997-03-03 | 1999-01-05 | Genus, Inc. | Multipurpose processing chamber for chemical vapor deposition processes |
| US6107608A (en) * | 1997-03-24 | 2000-08-22 | Micron Technology, Inc. | Temperature controlled spin chuck |
| JP3665826B2 (ja) * | 1997-05-29 | 2005-06-29 | Smc株式会社 | 基板熱処理装置 |
| JPH1167619A (ja) * | 1997-08-08 | 1999-03-09 | Yuasa Seisakusho:Kk | 基板加熱装置 |
| US5983644A (en) * | 1997-09-29 | 1999-11-16 | Applied Materials, Inc. | Integrated bake and chill plate |
| WO1999018602A1 (en) | 1997-10-08 | 1999-04-15 | Applied Materials, Inc. | Foam-based heat exchanger with heating element |
| JPH11121149A (ja) * | 1997-10-09 | 1999-04-30 | Ushio Inc | 面状加熱装置 |
| US6091060A (en) | 1997-12-31 | 2000-07-18 | Temptronic Corporation | Power and control system for a workpiece chuck |
| JP3311984B2 (ja) * | 1998-01-12 | 2002-08-05 | 東京エレクトロン株式会社 | 熱処理装置 |
| US6072163A (en) | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
| JP3453069B2 (ja) * | 1998-08-20 | 2003-10-06 | 東京エレクトロン株式会社 | 基板温調装置 |
| US6270580B2 (en) | 1999-04-12 | 2001-08-07 | Advanced Micro Devices, Inc. | Modified material deposition sequence for reduced detect densities in semiconductor manufacturing |
| US6472643B1 (en) * | 2000-03-07 | 2002-10-29 | Silicon Valley Group, Inc. | Substrate thermal management system |
-
2000
- 2000-03-07 US US09/519,963 patent/US6472643B1/en not_active Expired - Lifetime
-
2001
- 2001-02-27 AT AT01913112T patent/ATE354174T1/de not_active IP Right Cessation
- 2001-02-27 DE DE60126589T patent/DE60126589T2/de not_active Expired - Lifetime
- 2001-02-27 JP JP2001566181A patent/JP2003526921A/ja active Pending
- 2001-02-27 EP EP06024772A patent/EP1770759A3/de not_active Withdrawn
- 2001-02-27 KR KR1020027011753A patent/KR100752408B1/ko not_active Expired - Lifetime
- 2001-02-27 EP EP01913112A patent/EP1261984B1/de not_active Expired - Lifetime
- 2001-02-27 WO PCT/US2001/006281 patent/WO2001067505A2/en not_active Ceased
-
2008
- 2008-04-18 JP JP2008109410A patent/JP2008252102A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE60126589T2 (de) | 2007-11-22 |
| WO2001067505A2 (en) | 2001-09-13 |
| JP2003526921A (ja) | 2003-09-09 |
| DE60126589D1 (de) | 2007-03-29 |
| KR20030009383A (ko) | 2003-01-29 |
| EP1770759A2 (de) | 2007-04-04 |
| EP1770759A3 (de) | 2007-05-02 |
| EP1261984B1 (de) | 2007-02-14 |
| US6472643B1 (en) | 2002-10-29 |
| WO2001067505A3 (en) | 2002-04-18 |
| JP2008252102A (ja) | 2008-10-16 |
| EP1261984A2 (de) | 2002-12-04 |
| KR100752408B1 (ko) | 2007-08-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |