ATE354818T1 - Strahlungsempfindliche polysilazan- zusammensetzung, daraus erzeugte muster sowie ein verfahren zur veraschung eines entsprechenden beschichtungsfilms - Google Patents

Strahlungsempfindliche polysilazan- zusammensetzung, daraus erzeugte muster sowie ein verfahren zur veraschung eines entsprechenden beschichtungsfilms

Info

Publication number
ATE354818T1
ATE354818T1 AT01958459T AT01958459T ATE354818T1 AT E354818 T1 ATE354818 T1 AT E354818T1 AT 01958459 T AT01958459 T AT 01958459T AT 01958459 T AT01958459 T AT 01958459T AT E354818 T1 ATE354818 T1 AT E354818T1
Authority
AT
Austria
Prior art keywords
coating film
äsir
radiation sensitive
polysilazane composition
ashing
Prior art date
Application number
AT01958459T
Other languages
English (en)
Inventor
Tatsuro Nagahara
Hideki Matsuo
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000262703A external-priority patent/JP3414708B2/ja
Priority claimed from JP2000268510A external-priority patent/JP3414710B2/ja
Priority claimed from JP2000297107A external-priority patent/JP3421009B2/ja
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Application granted granted Critical
Publication of ATE354818T1 publication Critical patent/ATE354818T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/41—Compounds containing sulfur bound to oxygen
    • C08K5/42—Sulfonic acids; Derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/127—Spectral sensitizer containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
AT01958459T 2000-08-31 2001-08-24 Strahlungsempfindliche polysilazan- zusammensetzung, daraus erzeugte muster sowie ein verfahren zur veraschung eines entsprechenden beschichtungsfilms ATE354818T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000262703A JP3414708B2 (ja) 2000-08-31 2000-08-31 パターン化されたポリシラザン膜の形成方法
JP2000268510A JP3414710B2 (ja) 2000-09-05 2000-09-05 感光性ポリシラザン塗膜の焼成方法
JP2000297107A JP3421009B2 (ja) 2000-09-28 2000-09-28 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法

Publications (1)

Publication Number Publication Date
ATE354818T1 true ATE354818T1 (de) 2007-03-15

Family

ID=27344485

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01958459T ATE354818T1 (de) 2000-08-31 2001-08-24 Strahlungsempfindliche polysilazan- zusammensetzung, daraus erzeugte muster sowie ein verfahren zur veraschung eines entsprechenden beschichtungsfilms

Country Status (7)

Country Link
US (1) US6902875B2 (de)
EP (1) EP1239332B1 (de)
KR (2) KR100793620B1 (de)
CN (1) CN100395662C (de)
AT (1) ATE354818T1 (de)
DE (1) DE60126736T2 (de)
WO (1) WO2002019037A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19815978B4 (de) * 1998-04-09 2004-01-08 Forschungszentrum Karlsruhe Gmbh Verfahren zur Herstellung von Klein- und Mikroteilen aus Keramik
US20040081912A1 (en) * 1998-10-05 2004-04-29 Tatsuro Nagahara Photosensitive polysilazane composition and method of forming patterned polysilazane film
JP2004053838A (ja) * 2002-07-18 2004-02-19 Clariant (Japan) Kk 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法
JP2004077874A (ja) * 2002-08-20 2004-03-11 Clariant (Japan) Kk 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法
US7060637B2 (en) 2003-05-12 2006-06-13 Micron Technology, Inc. Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials
KR20060055515A (ko) * 2003-07-14 2006-05-23 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 감광성 조성물용 현상액 및 이를 사용하는 패턴화된내식막의 형성방법
JP4342895B2 (ja) * 2003-10-06 2009-10-14 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US7071121B2 (en) * 2003-10-28 2006-07-04 Hewlett-Packard Development Company, L.P. Patterned ceramic films and method for producing the same
JP4117356B2 (ja) * 2004-12-17 2008-07-16 国立大学法人徳島大学 基材表面の改質方法、改質された表面を有する基材およびその製造方法
US7297374B1 (en) * 2004-12-29 2007-11-20 3M Innovative Properties Company Single- and multi-photon polymerizable pre-ceramic polymeric compositions
KR101233918B1 (ko) * 2004-12-29 2013-02-15 쓰리엠 이노베이티브 프로퍼티즈 컴파니 다중-광자 중합성 예비-세라믹 중합체 조성물
JP4237184B2 (ja) * 2005-03-31 2009-03-11 エルピーダメモリ株式会社 半導体装置の製造方法
DE102007023094A1 (de) * 2007-05-16 2008-11-20 Clariant International Ltd. Farbpigmentierte Lackzusammensetzung mit hoher Deckkraft, erhöhter Kratzbeständigkeit und easy to clean Eigenschaften
JP4976927B2 (ja) * 2007-06-08 2012-07-18 キヤノン株式会社 情報配信システムおよび被配信者側装置およびプログラム
CN101458462B (zh) * 2007-12-13 2011-03-23 上海华虹Nec电子有限公司 降低半导体制造中光刻胶显影缺陷的光刻显影方法
TWI503334B (zh) * 2009-02-19 2015-10-11 Jsr Corp 聚合物及敏輻射線性組成物、及單體
WO2012024415A2 (en) * 2010-08-17 2012-02-23 Texas State University San Marcos, A Component Of The Texas State University System Durable ceramic nanocomposite thermal barrier coatings for metals and refractories
US20140124877A1 (en) * 2012-11-02 2014-05-08 Qualcomm Incorporated Conductive interconnect including an inorganic collar
JP6353546B2 (ja) 2014-09-02 2018-07-04 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法
US11079681B2 (en) * 2018-11-21 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography method for positive tone development
CN115651538B (zh) * 2022-11-17 2023-06-02 杭州万观科技有限公司 一种耐酸性盐雾的聚硼硅氮烷/环氧复合涂料

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2243527A1 (de) 1972-09-05 1974-04-18 Bayer Ag Formkoerper aus homogenen mischungen von siliciumcarbid und siliciumnitrid und verfahren zu ihrer herstellung
JPS5258374A (en) * 1975-11-10 1977-05-13 Toshiba Corp Improvement in sensitivity of positive type photo resist
FR2579602B1 (fr) * 1985-03-29 1987-06-05 Rhone Poulenc Rech Composition polysilazane pouvant reticuler en presence d'un metal ou d'un compose metallique catalysant la reaction d'hydrosilylation
FR2581391B1 (fr) * 1985-05-06 1987-06-05 Rhone Poulenc Rech Composition organo-polysilazane comportant des generateurs de radicaux libres et reticulable par apport d'energie
JPS62156135A (ja) 1985-12-28 1987-07-11 Toa Nenryo Kogyo Kk ポリオルガノ（ヒドロ）シラザン
JPH0618885B2 (ja) 1986-02-12 1994-03-16 東燃株式会社 ポリシロキサザンおよびその製法
JP3034090B2 (ja) * 1991-09-30 2000-04-17 触媒化成工業株式会社 パターン形成方法
US5206327A (en) * 1991-10-07 1993-04-27 Hercules Incorporated Preceramic polymers incorporating boron and their application in the sintering of carbide ceramics
JP3283276B2 (ja) 1991-12-04 2002-05-20 東燃ゼネラル石油株式会社 改質ポリシラザン及びその製造方法
JPH05258374A (ja) * 1992-03-16 1993-10-08 Ricoh Co Ltd 情報記録媒体
JP2790163B2 (ja) 1993-07-29 1998-08-27 富士通株式会社 シリコン酸化膜の形成方法、半導体装置の製造方法及びフラットディスプレイ装置の製造方法
JP3791083B2 (ja) * 1996-12-26 2006-06-28 住友化学株式会社 ポジ型フォトレジスト組成物
JPH10319597A (ja) 1997-05-23 1998-12-04 Mitsubishi Electric Corp 感光性シリコーンラダー系樹脂組成物、この樹脂組成物にパターンを転写するパターン転写方法および上記樹脂組成物を用いた半導体装置
DE19803564A1 (de) * 1998-01-30 1999-08-05 Agfa Gevaert Ag Polymere mit Einheiten aus N-substituiertem Maleimid und deren Verwendung in strahlungsempfindlichen Gemischen
JP4383554B2 (ja) * 1998-05-28 2009-12-16 パナソニック株式会社 非水電解質二次電池用負極材料およびその負極材料の製造方法ならびにその負極材料を用いた非水電解質二次電池
JP2000181069A (ja) 1998-10-05 2000-06-30 Tonen Corp 感光性ポリシラザン組成物及びパタ―ン化されたポリシラザン膜の形成方法
ES2234653T3 (es) 1999-08-31 2005-07-01 Abu-Plast Kunststoffbetriebe Gmbh Dispositivo de accionamiento para un armazon de descarga de una cisterna.

Also Published As

Publication number Publication date
DE60126736T2 (de) 2007-11-15
CN1388920A (zh) 2003-01-01
EP1239332B1 (de) 2007-02-21
EP1239332A1 (de) 2002-09-11
EP1239332A4 (de) 2004-11-10
KR20020092922A (ko) 2002-12-12
KR100804444B1 (ko) 2008-02-20
KR100793620B1 (ko) 2008-01-11
KR20070086644A (ko) 2007-08-27
CN100395662C (zh) 2008-06-18
WO2002019037A1 (en) 2002-03-07
US6902875B2 (en) 2005-06-07
US20030113657A1 (en) 2003-06-19
DE60126736D1 (de) 2007-04-05

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