ATE357323T1 - Vorrichtungen zum abtrennen von substraten und zugehörige verfahren - Google Patents

Vorrichtungen zum abtrennen von substraten und zugehörige verfahren

Info

Publication number
ATE357323T1
ATE357323T1 AT02794609T AT02794609T ATE357323T1 AT E357323 T1 ATE357323 T1 AT E357323T1 AT 02794609 T AT02794609 T AT 02794609T AT 02794609 T AT02794609 T AT 02794609T AT E357323 T1 ATE357323 T1 AT E357323T1
Authority
AT
Austria
Prior art keywords
substrate
wafers
apart
clamping
devices
Prior art date
Application number
AT02794609T
Other languages
English (en)
Inventor
Thierry Barge
Walter Schwarzenbach
Jean-Marc Waechter
Thuan Truong
Bruno Ghyselen
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE357323T1 publication Critical patent/ATE357323T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/32—Methods and apparatus specially adapted for working materials which can easily be split, e.g. mica, slate, schist
    • B28D1/322—Splitting of the working materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/30—Breaking or tearing apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/30—Breaking or tearing apparatus
    • Y10T225/371—Movable breaking tool
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes
    • Y10T83/0476—Including stacking of plural workpieces

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AT02794609T 2001-08-07 2002-07-24 Vorrichtungen zum abtrennen von substraten und zugehörige verfahren ATE357323T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0110537A FR2828428B1 (fr) 2001-08-07 2001-08-07 Dispositif de decollement de substrats et procede associe

Publications (1)

Publication Number Publication Date
ATE357323T1 true ATE357323T1 (de) 2007-04-15

Family

ID=8866341

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02794609T ATE357323T1 (de) 2001-08-07 2002-07-24 Vorrichtungen zum abtrennen von substraten und zugehörige verfahren

Country Status (9)

Country Link
US (2) US7017570B2 (de)
EP (1) EP1423244B9 (de)
JP (1) JP4509555B2 (de)
KR (1) KR100784579B1 (de)
CN (1) CN1329949C (de)
AT (1) ATE357323T1 (de)
DE (1) DE60219034T2 (de)
FR (1) FR2828428B1 (de)
WO (1) WO2003013815A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2830983B1 (fr) 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
US8293619B2 (en) * 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
FR2906077B1 (fr) * 2006-09-18 2009-03-06 Michel Roche Procede et appareillages associes, destine a la fabrication de substrats semiconducteurs poly ou monocristallins minces
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
KR100830998B1 (ko) * 2006-12-28 2008-05-20 주식회사 실트론 웨이퍼 낱장 분리장치
TW200832505A (en) * 2007-01-18 2008-08-01 Silicon Genesis Corp Controlled substrate cleave process and apparatus
FR2912259B1 (fr) * 2007-02-01 2009-06-05 Soitec Silicon On Insulator Procede de fabrication d'un substrat du type "silicium sur isolant".
FR2919960B1 (fr) * 2007-08-08 2010-05-21 Soitec Silicon On Insulator Procede et installation pour la fracture d'un substrat composite selon un plan de fragilisation
DE102007056115A1 (de) * 2007-11-15 2009-05-20 Freiberger Compound Materials Gmbh Verfahren zum Trennen von Einkristallen
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
FR2975627A1 (fr) 2011-05-24 2012-11-30 Soitec Silicon On Insulator Dispositif de decollement de substrat avec detection d'obstacles
CN102522289B (zh) * 2011-12-30 2014-12-17 四川虹欧显示器件有限公司 等离子显示屏中前基板与后基板的分离方法及装置
FR2995440A1 (fr) * 2012-09-07 2014-03-14 Soitec Silicon On Insulator Dispositif de separation de deux substrats
FR2995441B1 (fr) 2012-09-07 2015-11-06 Soitec Silicon On Insulator Dispositif de separation de deux substrats
CN105336651B (zh) * 2014-06-10 2018-03-23 北大方正集团有限公司 晶片转置系统
CN104241186B (zh) * 2014-09-19 2017-09-29 上海集成电路研发中心有限公司 一种晶圆提取装置
CN105235079A (zh) * 2015-10-19 2016-01-13 天津市环欧半导体材料技术有限公司 一种多线切割机硅片分切模具
JP6682907B2 (ja) * 2016-02-26 2020-04-15 三星ダイヤモンド工業株式会社 脆性基板の分断方法
CN108447811B (zh) * 2018-02-27 2020-06-12 嘉兴尚能光伏材料科技有限公司 硅片花篮及其控制器
FR3093716B1 (fr) 2019-03-15 2021-02-12 Soitec Silicon On Insulator systeme de fracture d'une pluralitÉ d'assemblages de tranches.
FR3093715B1 (fr) 2019-03-15 2021-03-05 Soitec Silicon On Insulator Dispositif de maintien pour un ensemble à fracturer
CN116469810A (zh) * 2023-05-10 2023-07-21 上海超硅半导体股份有限公司 晶片分离装置及晶片分离方法
CN118658816B (zh) * 2024-08-21 2024-10-29 青岛天仁微纳科技有限责任公司 一种纳米压印硅晶圆分片装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3901423A (en) * 1973-11-26 1975-08-26 Purdue Research Foundation Method for fracturing crystalline materials
US4244348A (en) * 1979-09-10 1981-01-13 Atlantic Richfield Company Process for cleaving crystalline materials
JPS62237744A (ja) * 1986-04-07 1987-10-17 Mitsubishi Electric Corp Ｉｃ基板収納用カセツト
JPH0722177B2 (ja) * 1990-04-26 1995-03-08 三洋電機株式会社 ウェハの移し替え装置
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5738767A (en) * 1994-01-11 1998-04-14 Intevac, Inc. Substrate handling and processing system for flat panel displays
JP3656254B2 (ja) * 1994-02-28 2005-06-08 三菱住友シリコン株式会社 接着ウエーハの剥離方法及び剥離装置
JP3381443B2 (ja) * 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
JPH0969552A (ja) * 1995-08-30 1997-03-11 Toshiba Corp ウェハ移し替え装置
KR0165467B1 (ko) * 1995-10-31 1999-02-01 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
JPH09263500A (ja) * 1996-01-22 1997-10-07 Komatsu Electron Metals Co Ltd 貼り合わせｓｏｉウェーハの剥がし治具
FR2752332B1 (fr) * 1996-08-12 1998-09-11 Commissariat Energie Atomique Dispositif de decollement de plaquettes et procede de mise en oeuvre de ce dispositif
EP0849788B1 (de) * 1996-12-18 2004-03-10 Canon Kabushiki Kaisha Vefahren zum Herstellen eines Halbleiterartikels unter Verwendung eines Substrates mit einer porösen Halbleiterschicht
SG68035A1 (en) 1997-03-27 1999-10-19 Canon Kk Method and apparatus for separating composite member using fluid
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6427748B1 (en) 1998-07-27 2002-08-06 Canon Kabushiki Kaisha Sample processing apparatus and method
FR2785217B1 (fr) 1998-10-30 2001-01-19 Soitec Silicon On Insulator Procede et dispositif pour separer en deux tranches une plaque de materiau notamment semi-conducteur
US6286685B1 (en) * 1999-03-15 2001-09-11 Seh America, Inc. System and method for wafer thickness sorting
US6171965B1 (en) * 1999-04-21 2001-01-09 Silicon Genesis Corporation Treatment method of cleaved film for the manufacture of substrates
US6271060B1 (en) * 1999-09-13 2001-08-07 Vishay Intertechnology, Inc. Process of fabricating a chip scale surface mount package for semiconductor device
US6415843B1 (en) * 2001-01-10 2002-07-09 Anadigics, Inc. Spatula for separation of thinned wafer from mounting carrier

Also Published As

Publication number Publication date
US7017570B2 (en) 2006-03-28
EP1423244A1 (de) 2004-06-02
US20040188487A1 (en) 2004-09-30
WO2003013815A1 (fr) 2003-02-20
US7648888B2 (en) 2010-01-19
KR100784579B1 (ko) 2007-12-10
KR20040020979A (ko) 2004-03-09
DE60219034T2 (de) 2007-12-13
US20060138189A1 (en) 2006-06-29
FR2828428B1 (fr) 2003-10-17
JP2004537866A (ja) 2004-12-16
CN1329949C (zh) 2007-08-01
JP4509555B2 (ja) 2010-07-21
DE60219034D1 (de) 2007-05-03
FR2828428A1 (fr) 2003-02-14
EP1423244B9 (de) 2007-10-03
CN1564730A (zh) 2005-01-12
EP1423244B1 (de) 2007-03-21

Similar Documents

Publication Publication Date Title
ATE357323T1 (de) Vorrichtungen zum abtrennen von substraten und zugehörige verfahren
MY122372A (en) A method and apparatus for separating a plate of material, in particular of semiconductor material, into two wafers.
ATE235104T1 (de) Verfahren zum vereinzeln eines wafers
DE50014779D1 (de) Verfahren zum anisotropen plasmaätzen von halbleitern
WO2008005773A3 (en) Cluster tool for advanced front-end processing
WO2004008493A3 (en) Method and apparatus for supporting semiconductor wafers
ATE457856T1 (de) Plattenaufteilanlage zum aufteilen von plattenförmigen werkstücken, sowie verfahren zu deren betrieb
GB2432413A (en) Systems and methods for low-temperature gas separation
ATE370826T1 (de) Vorrichtung und verfahren zum spalten von mauerwerksblöcken
ATE320397T1 (de) Verfahren und vorrichtung zur handhabung von werkstücken
AU2003242168A1 (en) Method and apparatus for splitting semiconducor wafer
DK1553832T3 (da) Præparater og fremgangsmåder til celleseparering
DE50103912D1 (de) Verfahren und vorrichtung zum trennen von einkristallen, sowie eine justiervorrichtung und ein testverfahren zum ermitteln einer kristallorientierung
TW200624360A (en) Substrate treatment method, substrate treatment system, and substrate treatment program
MXPA01007352A (es) Metodo y aparato para la generacion automatizada de ligandos de acido nucleico.
CN101722581A (zh) 贴合基板的切割方法
AU2003212469A1 (en) Method for processing multiple semiconductor devices for test
SG142130A1 (en) Method of providing for an automated split runcard processing
DE502005008947D1 (de) Vorrichtung zum trennen von dampfgehärteten baustoffblöcken, sowie verwendung einer solchen vorrichtung
DE59805067D1 (de) Verfahren zum Ätzen von Halbleiterscheiben
DE50214330D1 (de) Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks sowie Vorrichtung zum Durchführen dieses Verfahrens
DE502007003590D1 (de) Verfahren zum materialabtrag an festkörpern und dessen verwendung
ATE513664T1 (de) Vorrichtung und verfahren zur vereinzelung von scheibenförmigen substraten unter nutzung von adhäsionskräften
DE60305856D1 (de) Verfahren zum Schneiden von Halbleiterwafern
DE60212992D1 (de) Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties