ATE359230T1 - Verfahren zum trennen einer nützlichen schicht und durch das verfahren erhaltene komponente - Google Patents

Verfahren zum trennen einer nützlichen schicht und durch das verfahren erhaltene komponente

Info

Publication number
ATE359230T1
ATE359230T1 AT04767542T AT04767542T ATE359230T1 AT E359230 T1 ATE359230 T1 AT E359230T1 AT 04767542 T AT04767542 T AT 04767542T AT 04767542 T AT04767542 T AT 04767542T AT E359230 T1 ATE359230 T1 AT E359230T1
Authority
AT
Austria
Prior art keywords
sacrificial layer
separating
useful layer
component obtained
layer
Prior art date
Application number
AT04767542T
Other languages
English (en)
Inventor
Hubert Grange
Bernard Diem
Bosson Yylvie Viollet
Michel Borel
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE359230T1 publication Critical patent/ATE359230T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
    • B81C2201/115—Roughening a surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Micromachines (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT04767542T 2003-07-04 2004-07-01 Verfahren zum trennen einer nützlichen schicht und durch das verfahren erhaltene komponente ATE359230T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0308157A FR2857002B1 (fr) 2003-07-04 2003-07-04 Procede de desolidarisation d'une couche utile et composant obtenu par ce procede

Publications (1)

Publication Number Publication Date
ATE359230T1 true ATE359230T1 (de) 2007-05-15

Family

ID=33522751

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04767542T ATE359230T1 (de) 2003-07-04 2004-07-01 Verfahren zum trennen einer nützlichen schicht und durch das verfahren erhaltene komponente

Country Status (7)

Country Link
US (1) US7569152B2 (de)
EP (1) EP1641709B1 (de)
JP (1) JP2007525330A (de)
AT (1) ATE359230T1 (de)
DE (1) DE602004005862T2 (de)
FR (1) FR2857002B1 (de)
WO (1) WO2005012160A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4559273B2 (ja) * 2005-03-30 2010-10-06 シチズンファインテックミヨタ株式会社 アクチュエータの製造方法
JP5178026B2 (ja) * 2006-03-10 2013-04-10 株式会社半導体エネルギー研究所 微小構造体、半導体装置、及び微小構造体の作製方法
FR2925889B1 (fr) * 2007-12-27 2010-01-29 Commissariat Energie Atomique Procede de realisation d'un dispositif micromecanique et/ou nanomecanique a butees anti-collage
US20240375937A1 (en) * 2023-05-09 2024-11-14 Nxp Usa, Inc. MEMS Device and Fabrication Process with Reduced Z-Axis Stiction

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783237A (en) * 1983-12-01 1988-11-08 Harry E. Aine Solid state transducer and method of making same
US4662746A (en) * 1985-10-30 1987-05-05 Texas Instruments Incorporated Spatial light modulator and method
EP0456029B1 (de) * 1990-05-10 1994-12-14 Yokogawa Electric Corporation Druckaufnehmer mit schwingendem Element
FR2700065B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant.
FR2700003B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu.
DE4331798B4 (de) * 1993-09-18 2004-08-26 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanischen Bauelementen
US5914507A (en) * 1994-05-11 1999-06-22 Regents Of The University Of Minnesota PZT microdevice
US5489556A (en) * 1994-06-29 1996-02-06 United Microelectronics Corp. Method for the fabrication of electrostatic microswitches
US5619476A (en) * 1994-10-21 1997-04-08 The Board Of Trustees Of The Leland Stanford Jr. Univ. Electrostatic ultrasonic transducer
JP3489273B2 (ja) * 1995-06-27 2004-01-19 株式会社デンソー 半導体力学量センサの製造方法
FR2736934B1 (fr) * 1995-07-21 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche
US5771321A (en) * 1996-01-04 1998-06-23 Massachusetts Institute Of Technology Micromechanical optical switch and flat panel display
US5898515A (en) * 1996-11-21 1999-04-27 Eastman Kodak Company Light reflecting micromachined cantilever
US6181460B1 (en) * 1998-11-18 2001-01-30 Trw Inc. Electromagnetic force controlled micromirror array
AU2001281381A1 (en) * 2000-08-03 2002-02-18 Analog Devices, Inc. Bonded wafer optical mems process
US6774010B2 (en) * 2001-01-25 2004-08-10 International Business Machines Corporation Transferable device-containing layer for silicon-on-insulator applications
JP2002323513A (ja) * 2001-02-23 2002-11-08 Fuji Electric Co Ltd 半導体デバイスおよびその製造方法
US6930364B2 (en) * 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
WO2003068669A1 (en) * 2002-02-14 2003-08-21 Silex Microsystems Ab Deflectable microstructure and method of manufacturing the same through bonding of wafers
US7410882B2 (en) * 2004-09-28 2008-08-12 Palo Alto Research Center Incorporated Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates
US7018877B1 (en) * 2004-09-28 2006-03-28 Palo Alto Research Center Selective delamination of thin-films by interface adhesion energy contrasts and thin film transistor devices formed thereby
US7956428B2 (en) * 2005-08-16 2011-06-07 Robert Bosch Gmbh Microelectromechanical devices and fabrication methods
EP1760037A1 (de) * 2005-09-06 2007-03-07 Infineon Technologies SensoNor AS Verfahren zum Herstellen von mikromechanischen Strukturen

Also Published As

Publication number Publication date
DE602004005862T2 (de) 2008-01-17
EP1641709A2 (de) 2006-04-05
JP2007525330A (ja) 2007-09-06
EP1641709B1 (de) 2007-04-11
US20060144816A1 (en) 2006-07-06
WO2005012160A3 (fr) 2005-06-09
DE602004005862D1 (de) 2007-05-24
WO2005012160A2 (fr) 2005-02-10
FR2857002B1 (fr) 2005-10-21
FR2857002A1 (fr) 2005-01-07
US7569152B2 (en) 2009-08-04

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