ATE360260T1 - Methoden zur herstellung von kondensatorelektroden und kondensatorkonstruktionen - Google Patents

Methoden zur herstellung von kondensatorelektroden und kondensatorkonstruktionen

Info

Publication number
ATE360260T1
ATE360260T1 AT02763466T AT02763466T ATE360260T1 AT E360260 T1 ATE360260 T1 AT E360260T1 AT 02763466 T AT02763466 T AT 02763466T AT 02763466 T AT02763466 T AT 02763466T AT E360260 T1 ATE360260 T1 AT E360260T1
Authority
AT
Austria
Prior art keywords
capacitor
methods
constructions
making
precursor
Prior art date
Application number
AT02763466T
Other languages
English (en)
Inventor
Haining Yang
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE360260T1 publication Critical patent/ATE360260T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Capacitors (AREA)
AT02763466T 2001-08-16 2002-08-15 Methoden zur herstellung von kondensatorelektroden und kondensatorkonstruktionen ATE360260T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/932,236 US20030036242A1 (en) 2001-08-16 2001-08-16 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions

Publications (1)

Publication Number Publication Date
ATE360260T1 true ATE360260T1 (de) 2007-05-15

Family

ID=25461998

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02763466T ATE360260T1 (de) 2001-08-16 2002-08-15 Methoden zur herstellung von kondensatorelektroden und kondensatorkonstruktionen

Country Status (11)

Country Link
US (5) US20030036242A1 (de)
EP (1) EP1417701B1 (de)
JP (1) JP2005526377A (de)
KR (2) KR100627503B1 (de)
CN (1) CN100521086C (de)
AT (1) ATE360260T1 (de)
AU (1) AU2002327474A1 (de)
DE (1) DE60219635T2 (de)
SG (1) SG146440A1 (de)
TW (1) TW559982B (de)
WO (1) WO2003017341A2 (de)

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JP2005314713A (ja) * 2004-04-27 2005-11-10 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude ルテニウム膜またはルテニウム酸化物膜の製造方法
KR100587686B1 (ko) * 2004-07-15 2006-06-08 삼성전자주식회사 질화 티타늄막 형성방법 및 이를 이용한 커패시터 제조방법
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US7906175B2 (en) 2007-02-21 2011-03-15 Air Liquide Electronics U.S. Lp Methods for forming a ruthenium-based film on a substrate
WO2011106072A2 (en) 2010-02-23 2011-09-01 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
US9613859B2 (en) 2015-01-09 2017-04-04 Applied Materials, Inc. Direct deposition of nickel silicide nanowire
WO2019154945A1 (en) 2018-02-12 2019-08-15 Merck Patent Gmbh Methods of vapor deposition of ruthenium using an oxygen-free co-reactant

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Also Published As

Publication number Publication date
US20030036242A1 (en) 2003-02-20
US6924195B2 (en) 2005-08-02
JP2005526377A (ja) 2005-09-02
US20030036210A1 (en) 2003-02-20
WO2003017341A2 (en) 2003-02-27
CN100521086C (zh) 2009-07-29
DE60219635T2 (de) 2007-12-20
KR20060031708A (ko) 2006-04-12
EP1417701B1 (de) 2007-04-18
US20060040414A1 (en) 2006-02-23
KR100632614B1 (ko) 2006-10-09
US7354842B2 (en) 2008-04-08
DE60219635D1 (de) 2007-05-31
KR20040030959A (ko) 2004-04-09
KR100627503B1 (ko) 2006-09-21
SG146440A1 (en) 2008-10-30
US20050032366A1 (en) 2005-02-10
TW559982B (en) 2003-11-01
AU2002327474A1 (en) 2003-03-03
WO2003017341B1 (en) 2004-04-15
EP1417701A2 (de) 2004-05-12
US20040161892A1 (en) 2004-08-19
CN1543665A (zh) 2004-11-03
WO2003017341A3 (en) 2004-02-19

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