ATE363733T1 - Nanoelektronische bauelemente und schaltungen - Google Patents

Nanoelektronische bauelemente und schaltungen

Info

Publication number
ATE363733T1
ATE363733T1 AT02764075T AT02764075T ATE363733T1 AT E363733 T1 ATE363733 T1 AT E363733T1 AT 02764075 T AT02764075 T AT 02764075T AT 02764075 T AT02764075 T AT 02764075T AT E363733 T1 ATE363733 T1 AT E363733T1
Authority
AT
Austria
Prior art keywords
lines
diode
diode devices
circuits
substrate
Prior art date
Application number
AT02764075T
Other languages
English (en)
Inventor
Aimin Song
Paer Omling
Original Assignee
Plastic Eprint Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plastic Eprint Ltd filed Critical Plastic Eprint Ltd
Application granted granted Critical
Publication of ATE363733T1 publication Critical patent/ATE363733T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
AT02764075T 2001-04-20 2002-04-18 Nanoelektronische bauelemente und schaltungen ATE363733T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0109782.3A GB0109782D0 (en) 2001-04-20 2001-04-20 Nanoelectronic devices and circuits

Publications (1)

Publication Number Publication Date
ATE363733T1 true ATE363733T1 (de) 2007-06-15

Family

ID=9913182

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02764075T ATE363733T1 (de) 2001-04-20 2002-04-18 Nanoelektronische bauelemente und schaltungen

Country Status (12)

Country Link
US (1) US7224026B2 (de)
EP (1) EP1380053B1 (de)
JP (1) JP4902094B2 (de)
KR (1) KR100884040B1 (de)
CN (1) CN100377354C (de)
AT (1) ATE363733T1 (de)
AU (1) AU2002308010B2 (de)
CA (1) CA2444681C (de)
DE (1) DE60220394T2 (de)
ES (1) ES2287309T3 (de)
GB (1) GB0109782D0 (de)
WO (1) WO2002086973A2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0109782D0 (en) * 2001-04-20 2001-06-13 Btg Int Ltd Nanoelectronic devices and circuits
JP3908503B2 (ja) * 2001-10-30 2007-04-25 富士通株式会社 光スイッチ
US7838875B1 (en) * 2003-01-22 2010-11-23 Tsang Dean Z Metal transistor device
GB0415995D0 (en) * 2004-07-16 2004-08-18 Song Aimin Memory array
US7874250B2 (en) * 2005-02-09 2011-01-25 Schlumberger Technology Corporation Nano-based devices for use in a wellbore
EP1880430B1 (de) * 2005-05-09 2011-09-28 Pragmatic Printing Ltd Elektronische vorrichtungen
US20080253167A1 (en) * 2007-04-16 2008-10-16 Ralf Symanczyk Integrated Circuit, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, Active Element, Memory Module, and Computing System
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
GB2462693B (en) * 2008-07-31 2013-06-19 Pragmatic Printing Ltd Forming electrically insulative regions
CN101431106B (zh) * 2008-12-05 2012-06-06 中山大学 基于负微分迁移率的平面纳米电磁辐射器结构
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
GB2475561A (en) 2009-11-24 2011-05-25 Nano Eprint Ltd Planar electronic devices
US20120305892A1 (en) * 2010-12-08 2012-12-06 Martin Thornton Electronic device, method of manufacturing a device and apparatus for manufacturing a device
JP5594780B2 (ja) * 2011-02-28 2014-09-24 日本電信電話株式会社 半導体回路
GB2499606B (en) 2012-02-21 2016-06-22 Pragmatic Printing Ltd Substantially planar electronic devices and circuits
JP5814194B2 (ja) * 2012-07-27 2015-11-17 日本電信電話株式会社 半導体論理回路
EP2731264A1 (de) * 2012-11-08 2014-05-14 Université Montpellier 2 Sciences et Techniques Vorrichtung und Verfahren zur direkten Demodulation von Signalen mit Trägerfrequenzen bis in den THz-Bereich
EP2731263A1 (de) * 2012-11-08 2014-05-14 Université Montpellier 2 Sciences et Techniques Vorrichtung und Verfahren zum Mischen elektromagnetischer Wellen mit Frequenzen bis in den THz-Bereich
CN103219944B (zh) * 2013-04-23 2015-09-16 华南师范大学 一种基于低维半导体结构的倍频器
CN103489937B (zh) * 2013-10-11 2017-01-25 中国科学院半导体研究所 一种非对称沟道量子点场效应光子探测器
CN104112752B (zh) * 2014-05-16 2017-03-08 华南师范大学 具有相位锁定功能的平面纳米振荡器阵列
FR3030886B1 (fr) * 2014-12-22 2017-03-10 Centre Nat Rech Scient Dispositif de modulation comportant une nano-diode
CN108598258B (zh) * 2018-04-27 2021-11-09 华南师范大学 一种具有静态负微分电阻特性的太赫兹器件
JP2020009883A (ja) 2018-07-06 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距モジュール、および、電子機器

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829356A (en) * 1971-04-16 1974-08-13 Nl Industries Inc Sintered ceramic bodies with porous portions
US3679950A (en) * 1971-04-16 1972-07-25 Nl Industries Inc Ceramic capacitors
DE59010851D1 (de) * 1989-04-27 1998-11-12 Max Planck Gesellschaft Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
EP0394757B1 (de) * 1989-04-27 1998-10-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
JPH0411784A (ja) * 1990-04-28 1992-01-16 Fujitsu Ltd 量子ポイントコンタクト装置およびその製造方法
JPH04229656A (ja) * 1990-06-13 1992-08-19 Fujitsu Ltd 量子波屈折デバイス
JPH05315598A (ja) * 1992-05-08 1993-11-26 Fujitsu Ltd 半導体装置
JP3182892B2 (ja) * 1992-07-03 2001-07-03 松下電器産業株式会社 量子素子の製造方法
JPH06140636A (ja) * 1992-10-28 1994-05-20 Sony Corp 量子細線トランジスタとその製法
GB9226847D0 (en) * 1992-12-23 1993-02-17 Hitachi Europ Ltd Complementary conductive device
GB9311111D0 (en) * 1993-05-28 1993-07-14 Hitachi Europ Ltd Quantum structure devices
US5772905A (en) 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
JP3414992B2 (ja) * 1997-08-13 2003-06-09 日本電信電話株式会社 半導体光素子とその製造方法
JP3776266B2 (ja) * 1998-09-14 2006-05-17 富士通株式会社 赤外線検知器とその製造方法
TW514968B (en) 2000-09-01 2002-12-21 Btg Int Ltd Nanoelectronic devices, circuits including such devices and methods for achieving transistor action and rectifying an alternating voltage in such device
GB0109782D0 (en) * 2001-04-20 2001-06-13 Btg Int Ltd Nanoelectronic devices and circuits
EP1251562A1 (de) * 2001-04-20 2002-10-23 Btg International Limited Nanoelektronische Bauelemente und Schaltungen

Also Published As

Publication number Publication date
GB0109782D0 (en) 2001-06-13
EP1380053A2 (de) 2004-01-14
CA2444681A1 (en) 2002-10-31
WO2002086973A2 (en) 2002-10-31
KR100884040B1 (ko) 2009-02-19
EP1380053B1 (de) 2007-05-30
ES2287309T3 (es) 2007-12-16
US20040149679A1 (en) 2004-08-05
DE60220394D1 (de) 2007-07-12
JP4902094B2 (ja) 2012-03-21
CN1669144A (zh) 2005-09-14
CA2444681C (en) 2013-12-17
CN100377354C (zh) 2008-03-26
JP2004534388A (ja) 2004-11-11
WO2002086973A3 (en) 2003-10-16
US7224026B2 (en) 2007-05-29
DE60220394T2 (de) 2008-01-31
AU2002308010B2 (en) 2007-08-09
KR20040012755A (ko) 2004-02-11

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