ATE366831T1 - Verfahren zur abscheidung einer dünnschicht auf einer oxidierten oberflächenschicht eines substrats - Google Patents

Verfahren zur abscheidung einer dünnschicht auf einer oxidierten oberflächenschicht eines substrats

Info

Publication number
ATE366831T1
ATE366831T1 AT05354017T AT05354017T ATE366831T1 AT E366831 T1 ATE366831 T1 AT E366831T1 AT 05354017 T AT05354017 T AT 05354017T AT 05354017 T AT05354017 T AT 05354017T AT E366831 T1 ATE366831 T1 AT E366831T1
Authority
AT
Austria
Prior art keywords
stage
reactor
thin film
purging
substrate
Prior art date
Application number
AT05354017T
Other languages
English (en)
Inventor
Jean-Francois Damlencourt
Olivier Renault
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE366831T1 publication Critical patent/ATE366831T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Chemically Coating (AREA)
  • Physical Vapour Deposition (AREA)
AT05354017T 2004-04-27 2005-04-08 Verfahren zur abscheidung einer dünnschicht auf einer oxidierten oberflächenschicht eines substrats ATE366831T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0404461A FR2869325B1 (fr) 2004-04-27 2004-04-27 Procede de depot d'une couche mince sur une couche oxydee d'un substrat

Publications (1)

Publication Number Publication Date
ATE366831T1 true ATE366831T1 (de) 2007-08-15

Family

ID=34942677

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05354017T ATE366831T1 (de) 2004-04-27 2005-04-08 Verfahren zur abscheidung einer dünnschicht auf einer oxidierten oberflächenschicht eines substrats

Country Status (5)

Country Link
US (1) US7030043B2 (de)
EP (1) EP1591558B8 (de)
AT (1) ATE366831T1 (de)
DE (1) DE602005001572T2 (de)
FR (1) FR2869325B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2949564B1 (fr) 2009-08-28 2012-01-06 Commissariat Energie Atomique Procede et dispositif d'evaluation des performances electriques d'un transistor fdsoi
FR2987134B1 (fr) 2012-02-16 2014-11-28 Commissariat Energie Atomique Procede et dispositif de mesure de l'evolution dans le temps des performances electriques d'un transistor fdsoi
JP6616070B2 (ja) * 2013-12-01 2019-12-04 ユージェヌス インコーポレイテッド 誘電性複合体構造の作製方法及び装置
KR102362534B1 (ko) * 2014-12-08 2022-02-15 주성엔지니어링(주) 기판 처리방법
CN113130735B (zh) * 2019-12-31 2023-08-04 浙江驰拓科技有限公司 磁隧道结中势垒层的制备方法、磁隧道结及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3863391B2 (ja) * 2001-06-13 2006-12-27 Ｎｅｃエレクトロニクス株式会社 半導体装置
WO2003089682A1 (en) * 2002-04-19 2003-10-30 Mattson Technology, Inc. System for depositing a film onto a substrate using a low vapor pressure gas precursor
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6958300B2 (en) * 2002-08-28 2005-10-25 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
US6958302B2 (en) * 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US6930059B2 (en) * 2003-02-27 2005-08-16 Sharp Laboratories Of America, Inc. Method for depositing a nanolaminate film by atomic layer deposition

Also Published As

Publication number Publication date
EP1591558B8 (de) 2007-09-19
US20050239298A1 (en) 2005-10-27
FR2869325B1 (fr) 2006-06-16
EP1591558A1 (de) 2005-11-02
DE602005001572T2 (de) 2008-03-20
US7030043B2 (en) 2006-04-18
FR2869325A1 (fr) 2005-10-28
DE602005001572D1 (de) 2007-08-23
EP1591558B1 (de) 2007-07-11

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