ATE438927T1 - Prozess zur herstellung von dünnfilmtransistoren - Google Patents
Prozess zur herstellung von dünnfilmtransistorenInfo
- Publication number
- ATE438927T1 ATE438927T1 AT01927094T AT01927094T ATE438927T1 AT E438927 T1 ATE438927 T1 AT E438927T1 AT 01927094 T AT01927094 T AT 01927094T AT 01927094 T AT01927094 T AT 01927094T AT E438927 T1 ATE438927 T1 AT E438927T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- thin film
- film transistors
- producing thin
- transistors
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
Landscapes
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19773100P | 2000-04-18 | 2000-04-18 | |
| PCT/US2001/012429 WO2001080287A2 (en) | 2000-04-18 | 2001-04-17 | Process for fabricating thin film transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE438927T1 true ATE438927T1 (de) | 2009-08-15 |
Family
ID=22730530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01927094T ATE438927T1 (de) | 2000-04-18 | 2001-04-17 | Prozess zur herstellung von dünnfilmtransistoren |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6825068B2 (de) |
| EP (1) | EP1275156B1 (de) |
| JP (1) | JP2003531487A (de) |
| KR (1) | KR100767233B1 (de) |
| CN (1) | CN1237623C (de) |
| AT (1) | ATE438927T1 (de) |
| AU (1) | AU2001253575A1 (de) |
| DE (1) | DE60139463D1 (de) |
| WO (1) | WO2001080287A2 (de) |
Families Citing this family (226)
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| JP4582914B2 (ja) | 1999-04-06 | 2010-11-17 | イー インク コーポレイション | カプセルベースの起電ディスプレイにおける使用のための液滴を作製するための方法 |
| US6498114B1 (en) | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
| US6842657B1 (en) | 1999-04-09 | 2005-01-11 | E Ink Corporation | Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication |
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| US6693620B1 (en) | 1999-05-03 | 2004-02-17 | E Ink Corporation | Threshold addressing of electrophoretic displays |
| WO2001002899A2 (en) | 1999-07-01 | 2001-01-11 | E Ink Corporation | Electrophoretic medium provided with spacers |
| EP1198852B1 (de) | 1999-07-21 | 2009-12-02 | E Ink Corporation | Bevorzugte methode, elektrische leiterbahnen für die kontrolle eines elektronischen displays herzustellen |
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| WO2001017040A1 (en) | 1999-08-31 | 2001-03-08 | E Ink Corporation | A solvent annealing process for forming a thin semiconductor film with advantageous properties |
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| DE60017440T2 (de) | 1999-10-11 | 2006-03-02 | University College Dublin | Elektrochrome vorrichtung |
| US6197663B1 (en) * | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
| US6672921B1 (en) | 2000-03-03 | 2004-01-06 | Sipix Imaging, Inc. | Manufacturing process for electrophoretic display |
-
2001
- 2001-04-17 DE DE60139463T patent/DE60139463D1/de not_active Expired - Lifetime
- 2001-04-17 KR KR1020027013880A patent/KR100767233B1/ko not_active Expired - Fee Related
- 2001-04-17 EP EP01927094A patent/EP1275156B1/de not_active Expired - Lifetime
- 2001-04-17 AT AT01927094T patent/ATE438927T1/de not_active IP Right Cessation
- 2001-04-17 CN CNB018081681A patent/CN1237623C/zh not_active Expired - Fee Related
- 2001-04-17 AU AU2001253575A patent/AU2001253575A1/en not_active Abandoned
- 2001-04-17 US US09/836,884 patent/US6825068B2/en not_active Expired - Lifetime
- 2001-04-17 WO PCT/US2001/012429 patent/WO2001080287A2/en not_active Ceased
- 2001-04-17 JP JP2001577586A patent/JP2003531487A/ja not_active Ceased
-
2004
- 2004-08-17 US US10/919,657 patent/US7365394B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1275156A2 (de) | 2003-01-15 |
| WO2001080287A2 (en) | 2001-10-25 |
| CN1441967A (zh) | 2003-09-10 |
| KR20020089479A (ko) | 2002-11-29 |
| US20050067656A1 (en) | 2005-03-31 |
| WO2001080287A3 (en) | 2002-05-23 |
| JP2003531487A (ja) | 2003-10-21 |
| CN1237623C (zh) | 2006-01-18 |
| DE60139463D1 (de) | 2009-09-17 |
| US6825068B2 (en) | 2004-11-30 |
| KR100767233B1 (ko) | 2007-10-17 |
| US7365394B2 (en) | 2008-04-29 |
| US20020019081A1 (en) | 2002-02-14 |
| EP1275156B1 (de) | 2009-08-05 |
| AU2001253575A1 (en) | 2001-10-30 |
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| Date | Code | Title | Description |
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| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |