ATE373320T1 - Methoden zur herstellung einer feldeffekttransistor-struktur mit teilweise isolierten source/drain-übergängen - Google Patents

Methoden zur herstellung einer feldeffekttransistor-struktur mit teilweise isolierten source/drain-übergängen

Info

Publication number
ATE373320T1
ATE373320T1 AT00992349T AT00992349T ATE373320T1 AT E373320 T1 ATE373320 T1 AT E373320T1 AT 00992349 T AT00992349 T AT 00992349T AT 00992349 T AT00992349 T AT 00992349T AT E373320 T1 ATE373320 T1 AT E373320T1
Authority
AT
Austria
Prior art keywords
partially isolated
making
methods
field effect
effect transistor
Prior art date
Application number
AT00992349T
Other languages
English (en)
Inventor
Anand Murthy
Robert Chau
Patrick Morrow
Robert Mcfadden
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE373320T1 publication Critical patent/ATE373320T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
AT00992349T 1999-12-30 2000-11-27 Methoden zur herstellung einer feldeffekttransistor-struktur mit teilweise isolierten source/drain-übergängen ATE373320T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/474,836 US6541343B1 (en) 1999-12-30 1999-12-30 Methods of making field effect transistor structure with partially isolated source/drain junctions

Publications (1)

Publication Number Publication Date
ATE373320T1 true ATE373320T1 (de) 2007-09-15

Family

ID=23885131

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00992349T ATE373320T1 (de) 1999-12-30 2000-11-27 Methoden zur herstellung einer feldeffekttransistor-struktur mit teilweise isolierten source/drain-übergängen

Country Status (7)

Country Link
US (2) US6541343B1 (de)
EP (1) EP1245049B1 (de)
CN (1) CN1201403C (de)
AT (1) ATE373320T1 (de)
AU (1) AU4305701A (de)
DE (1) DE60036410T2 (de)
WO (1) WO2001050535A2 (de)

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Also Published As

Publication number Publication date
AU4305701A (en) 2001-07-16
CN1201403C (zh) 2005-05-11
US20030136985A1 (en) 2003-07-24
EP1245049A2 (de) 2002-10-02
EP1245049B1 (de) 2007-09-12
US6541343B1 (en) 2003-04-01
DE60036410T2 (de) 2008-05-29
WO2001050535A2 (en) 2001-07-12
CN1437769A (zh) 2003-08-20
DE60036410D1 (de) 2007-10-25
WO2001050535A3 (en) 2002-02-07

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