ATE379847T1 - Anordnung zur herstellung von löthöckern auf halbleitersubstraten unter generierung elektrischer ladung, methode und anordnung zum entfernen dieser ladungen, und elektrische ladung generierendes halbleitersubstrat - Google Patents

Anordnung zur herstellung von löthöckern auf halbleitersubstraten unter generierung elektrischer ladung, methode und anordnung zum entfernen dieser ladungen, und elektrische ladung generierendes halbleitersubstrat

Info

Publication number
ATE379847T1
ATE379847T1 AT00942389T AT00942389T ATE379847T1 AT E379847 T1 ATE379847 T1 AT E379847T1 AT 00942389 T AT00942389 T AT 00942389T AT 00942389 T AT00942389 T AT 00942389T AT E379847 T1 ATE379847 T1 AT E379847T1
Authority
AT
Austria
Prior art keywords
charge
arrangement
charges
wafer
semiconductor substrates
Prior art date
Application number
AT00942389T
Other languages
English (en)
Inventor
Shoriki Narita
Yasutaka Tsuboi
Masahiko Ikeya
Takaharu Mae
Shinji Kanayama
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP30885599A external-priority patent/JP3655787B2/ja
Priority claimed from JP2000184467A external-priority patent/JP4570210B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of ATE379847T1 publication Critical patent/ATE379847T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0444—Apparatus for wiring semiconductor or solid-state device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Micromachines (AREA)
AT00942389T 1999-07-02 2000-06-29 Anordnung zur herstellung von löthöckern auf halbleitersubstraten unter generierung elektrischer ladung, methode und anordnung zum entfernen dieser ladungen, und elektrische ladung generierendes halbleitersubstrat ATE379847T1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP18905399 1999-07-02
JP29370299 1999-10-15
JP30885599A JP3655787B2 (ja) 1999-07-02 1999-10-29 電荷発生基板用バンプ形成装置及び電荷発生基板の除電方法
JP32397999 1999-11-15
JP2000184467A JP4570210B2 (ja) 1999-07-02 2000-06-20 電荷発生基板用バンプ形成装置

Publications (1)

Publication Number Publication Date
ATE379847T1 true ATE379847T1 (de) 2007-12-15

Family

ID=27528983

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00942389T ATE379847T1 (de) 1999-07-02 2000-06-29 Anordnung zur herstellung von löthöckern auf halbleitersubstraten unter generierung elektrischer ladung, methode und anordnung zum entfernen dieser ladungen, und elektrische ladung generierendes halbleitersubstrat

Country Status (7)

Country Link
US (3) US6818975B1 (de)
EP (1) EP1202336B1 (de)
KR (1) KR100446262B1 (de)
CN (1) CN100382261C (de)
AT (1) ATE379847T1 (de)
DE (1) DE60037251T2 (de)
WO (1) WO2001003176A1 (de)

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JP4456234B2 (ja) * 2000-07-04 2010-04-28 パナソニック株式会社 バンプ形成方法
US20030209310A1 (en) * 2002-05-13 2003-11-13 Fuentes Anastacio C. Apparatus, system and method to reduce wafer warpage
JP4206320B2 (ja) 2003-09-19 2009-01-07 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US8296933B2 (en) * 2008-08-19 2012-10-30 Zamtec Limited Fastening apparatus with authentication system
US8020281B2 (en) * 2008-08-19 2011-09-20 Silverbrook Research Pty Ltd Printed circuit board bonding device
CN102426412A (zh) * 2011-07-12 2012-04-25 上海华力微电子有限公司 一种掩模板表面微尘去除的方法
US8324783B1 (en) 2012-04-24 2012-12-04 UltraSolar Technology, Inc. Non-decaying electric power generation from pyroelectric materials
CN105764625B (zh) 2013-11-15 2019-06-28 格林利德事隆公司 提供用于操作自动弯管机的方法
JP6077023B2 (ja) * 2015-01-09 2017-02-08 株式会社伸興 静電気除去装置及び静電気除去方法
JP6456768B2 (ja) * 2015-05-18 2019-01-23 株式会社ディスコ 加工装置
CN109075118A (zh) * 2016-07-13 2018-12-21 应用材料公司 改进的基板支撑件
EP3506340B1 (de) * 2017-12-28 2020-10-21 Nexperia B.V. Verbindungs- und indexierungsvorrichtung
US11735438B2 (en) * 2018-12-03 2023-08-22 Applied Materials, Inc. Methods and apparatus for Marangoni drying
JP7489865B2 (ja) * 2020-08-24 2024-05-24 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN120316993B (zh) * 2025-04-03 2026-03-03 惠州中科智能科技有限公司 大数据驱动的无尘拖链抗静电优化设计方法

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JPS5925370B2 (ja) 1978-12-26 1984-06-16 富士通株式会社 半導体装置の製造方法
JPS62173428A (ja) 1986-01-28 1987-07-30 Fujitsu Ltd 導波路光デバイス
JPS6477111A (en) 1987-09-18 1989-03-23 Fujikura Ltd Removal of static electricity of wafer
JPH02203180A (ja) * 1989-02-02 1990-08-13 Sawafuji Electric Co Ltd 冷却装置
JPH03293808A (ja) * 1990-04-11 1991-12-25 Fujitsu Ltd 弾性表面波素子の製造方法
JPH0491422A (ja) * 1990-08-01 1992-03-24 Mitsubishi Electric Corp 半導体装置の製造方法
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JP3415283B2 (ja) * 1994-08-31 2003-06-09 株式会社東芝 バンプ形成装置、バンプ形成方法および半導体素子の製造方法
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CN1317925C (zh) * 1998-10-13 2007-05-23 松下电器产业株式会社 加热装置和加热方法
JP2002009569A (ja) 2000-06-26 2002-01-11 Toshiba Corp 弾性表面波装置の製造方法
JP2002203995A (ja) 2000-12-27 2002-07-19 Toshiba Corp 基板加熱方法、基板冷却方法、及びそれらの装置

Also Published As

Publication number Publication date
WO2001003176A1 (en) 2001-01-11
US7014092B2 (en) 2006-03-21
DE60037251T2 (de) 2008-10-09
EP1202336A4 (de) 2004-06-23
CN100382261C (zh) 2008-04-16
KR20020022076A (ko) 2002-03-23
US6818975B1 (en) 2004-11-16
DE60037251D1 (de) 2008-01-10
KR100446262B1 (ko) 2004-09-01
EP1202336B1 (de) 2007-11-28
EP1202336A1 (de) 2002-05-02
US20040035849A1 (en) 2004-02-26
US7005368B1 (en) 2006-02-28
CN1359534A (zh) 2002-07-17

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