JPS6477111A - Removal of static electricity of wafer - Google Patents

Removal of static electricity of wafer

Info

Publication number
JPS6477111A
JPS6477111A JP23419987A JP23419987A JPS6477111A JP S6477111 A JPS6477111 A JP S6477111A JP 23419987 A JP23419987 A JP 23419987A JP 23419987 A JP23419987 A JP 23419987A JP S6477111 A JPS6477111 A JP S6477111A
Authority
JP
Japan
Prior art keywords
static electricity
potential
wafer
removal
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23419987A
Other languages
Japanese (ja)
Inventor
Hiromi Hidaka
Takeru Fukuda
Takao Shioda
Koichi Takahashi
Tatsuya Sakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to JP23419987A priority Critical patent/JPS6477111A/en
Publication of JPS6477111A publication Critical patent/JPS6477111A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Elimination Of Static Electricity (AREA)

Abstract

PURPOSE:To lower the potential of static electricity in a short period of time by a method wherein, when the static electricity, generated on the wafers which are made of the material having a pyro-electric effect, is removed in the process of manufacture of an optical integrated circuit, the wafers are treated in the shower of ionized air. CONSTITUTION:When a LiNbO3 substrate 1 is dried up by heating, the static electricity of potential of about 1500KV is charged. Said LiNbO3 1 is placed on a base stand 3 with the surface, on which an optical waveguide and the like will be formed, is facing upward. Then, ionized air having the humidity atmosphere of 40-95% and the temperature of 25 deg.C or below is fed into a container 2. As a result, the static electricity is reduced to the potential of 200V or below within about 10minutes.
JP23419987A 1987-09-18 1987-09-18 Removal of static electricity of wafer Pending JPS6477111A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23419987A JPS6477111A (en) 1987-09-18 1987-09-18 Removal of static electricity of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23419987A JPS6477111A (en) 1987-09-18 1987-09-18 Removal of static electricity of wafer

Publications (1)

Publication Number Publication Date
JPS6477111A true JPS6477111A (en) 1989-03-23

Family

ID=16967240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23419987A Pending JPS6477111A (en) 1987-09-18 1987-09-18 Removal of static electricity of wafer

Country Status (1)

Country Link
JP (1) JPS6477111A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5966782A (en) * 1996-06-03 1999-10-19 Daiwa Kasei Kogyo Kabushiki Kaisha Fastener
JP2001210664A (en) * 1999-07-02 2001-08-03 Matsushita Electric Ind Co Ltd Bump forming apparatus for charge generation semiconductor substrate, charge elimination method for charge generation semiconductor substrate, charge elimination apparatus for charge generation semiconductor substrate, and charge generation semiconductor substrate
US7005368B1 (en) 1999-07-02 2006-02-28 Matsushita Electric Industrial Co., Ltd. Bump forming apparatus for charge appearance semiconductor substrate, charge removal method for charge appearance semiconductor substrate, charge removing unit for charge appearance semiconductor substrate, and charge appearance semiconductor substrate
JP2013041967A (en) * 2011-08-15 2013-02-28 Disco Abrasive Syst Ltd Division device
US8801070B2 (en) 2010-06-04 2014-08-12 Aisin Seiki Kabushiki Kaisha Garnish and mounting structure
CN111206773A (en) * 2020-01-19 2020-05-29 重庆渝能建筑安装工程有限公司 High-support template construction auxiliary system based on BIM virtual simulation and construction method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5966782A (en) * 1996-06-03 1999-10-19 Daiwa Kasei Kogyo Kabushiki Kaisha Fastener
US6317937B1 (en) 1996-06-03 2001-11-20 Daiwa Kasei Kogyo Kabushiki Kaisha Fastener structure assembly
JP2001210664A (en) * 1999-07-02 2001-08-03 Matsushita Electric Ind Co Ltd Bump forming apparatus for charge generation semiconductor substrate, charge elimination method for charge generation semiconductor substrate, charge elimination apparatus for charge generation semiconductor substrate, and charge generation semiconductor substrate
US7005368B1 (en) 1999-07-02 2006-02-28 Matsushita Electric Industrial Co., Ltd. Bump forming apparatus for charge appearance semiconductor substrate, charge removal method for charge appearance semiconductor substrate, charge removing unit for charge appearance semiconductor substrate, and charge appearance semiconductor substrate
US7014092B2 (en) * 1999-07-02 2006-03-21 Matsushita Electric Industrial Co., Ltd. Bump forming apparatus for charge appearance semiconductor substrate, charge removal method for charge appearance semiconductor substrate, charge removing unit for charge appearance semiconductor substrate, and charge appearance semiconductor substrate
US8801070B2 (en) 2010-06-04 2014-08-12 Aisin Seiki Kabushiki Kaisha Garnish and mounting structure
JP2013041967A (en) * 2011-08-15 2013-02-28 Disco Abrasive Syst Ltd Division device
CN111206773A (en) * 2020-01-19 2020-05-29 重庆渝能建筑安装工程有限公司 High-support template construction auxiliary system based on BIM virtual simulation and construction method thereof

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