ATE392709T1 - Verfahren und vorrichtung zur reinigung von einem einzigem substrat - Google Patents

Verfahren und vorrichtung zur reinigung von einem einzigem substrat

Info

Publication number
ATE392709T1
ATE392709T1 AT01120516T AT01120516T ATE392709T1 AT E392709 T1 ATE392709 T1 AT E392709T1 AT 01120516 T AT01120516 T AT 01120516T AT 01120516 T AT01120516 T AT 01120516T AT E392709 T1 ATE392709 T1 AT E392709T1
Authority
AT
Austria
Prior art keywords
wafer
cleaning
supplied
face
inert gas
Prior art date
Application number
AT01120516T
Other languages
English (en)
Inventor
Yuji Ono
Ryoichi Ohkura
Original Assignee
S E S Company Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by S E S Company Ltd filed Critical S E S Company Ltd
Application granted granted Critical
Publication of ATE392709T1 publication Critical patent/ATE392709T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
AT01120516T 2000-12-05 2001-08-28 Verfahren und vorrichtung zur reinigung von einem einzigem substrat ATE392709T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000370718A JP2002176026A (ja) 2000-12-05 2000-12-05 枚葉式基板洗浄方法および枚葉式基板洗浄装置

Publications (1)

Publication Number Publication Date
ATE392709T1 true ATE392709T1 (de) 2008-05-15

Family

ID=18840556

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01120516T ATE392709T1 (de) 2000-12-05 2001-08-28 Verfahren und vorrichtung zur reinigung von einem einzigem substrat

Country Status (10)

Country Link
US (2) US7029538B2 (de)
EP (1) EP1213746B1 (de)
JP (1) JP2002176026A (de)
KR (1) KR100812482B1 (de)
CN (1) CN1217386C (de)
AT (1) ATE392709T1 (de)
DE (1) DE60133618T2 (de)
IL (1) IL145118A0 (de)
SG (1) SG101461A1 (de)
TW (1) TW518684B (de)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040065540A1 (en) * 2002-06-28 2004-04-08 Novellus Systems, Inc. Liquid treatment using thin liquid layer
TW504776B (en) * 1999-09-09 2002-10-01 Mimasu Semiconductor Ind Co Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism
US7000622B2 (en) * 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
JP2003007664A (ja) * 2001-06-22 2003-01-10 Ses Co Ltd 枚葉式基板洗浄方法および枚葉式基板洗浄装置
JP4262004B2 (ja) 2002-08-29 2009-05-13 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US7584760B2 (en) * 2002-09-13 2009-09-08 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US6818566B2 (en) * 2002-10-18 2004-11-16 The Boc Group, Inc. Thermal activation of fluorine for use in a semiconductor chamber
JP2004266212A (ja) * 2003-03-04 2004-09-24 Tadahiro Omi 基板の処理システム
US20040238008A1 (en) * 2003-03-12 2004-12-02 Savas Stephen E. Systems and methods for cleaning semiconductor substrates using a reduced volume of liquid
US6823876B1 (en) * 2003-09-02 2004-11-30 Macronix International Co., Ltd. Methodology of rotational etching tool maintenance
US7431040B2 (en) * 2003-09-30 2008-10-07 Tokyo Electron Limited Method and apparatus for dispensing a rinse solution on a substrate
US8211242B2 (en) 2005-02-07 2012-07-03 Ebara Corporation Substrate processing method, substrate processing apparatus, and control program
CN100524639C (zh) * 2005-02-07 2009-08-05 株式会社荏原制作所 基板处理方法、基板处理装置及控制程序
KR100727703B1 (ko) * 2005-12-06 2007-06-13 동부일렉트로닉스 주식회사 반도체 소자 제조용 케미컬 공급장치
US7998308B2 (en) * 2006-04-18 2011-08-16 Tokyo Electron Limited Liquid processing apparatus
KR100749547B1 (ko) * 2006-08-01 2007-08-14 세메스 주식회사 기판 처리 장치
KR100811824B1 (ko) * 2006-08-01 2008-03-10 세메스 주식회사 기판 처리 장치
KR100831989B1 (ko) * 2006-08-30 2008-05-23 세메스 주식회사 기판 처리 장치
KR100816740B1 (ko) * 2006-08-30 2008-03-27 세메스 주식회사 기판 처리 장치 및 방법
JP4762098B2 (ja) 2006-09-28 2011-08-31 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
KR101418360B1 (ko) * 2007-03-07 2014-07-09 주식회사 케이씨텍 비접촉식 기판세정장치
JP5153296B2 (ja) * 2007-10-31 2013-02-27 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
KR100897547B1 (ko) * 2007-11-05 2009-05-15 세메스 주식회사 기판 처리 장치 및 방법
CN101673062B (zh) * 2008-09-09 2011-10-26 中芯国际集成电路制造(北京)有限公司 一种全湿法去胶的装置
CN102410711B (zh) * 2010-09-21 2014-02-26 如皋市大昌电子有限公司 一种二极管脱水机
US8926788B2 (en) 2010-10-27 2015-01-06 Lam Research Ag Closed chamber for wafer wet processing
US9997379B2 (en) 2010-11-30 2018-06-12 Lam Research Ag Method and apparatus for wafer wet processing
JP5829082B2 (ja) * 2011-09-09 2015-12-09 オリンパス株式会社 洗浄装置
US20130068264A1 (en) * 2011-09-21 2013-03-21 Nanya Technology Corporation Wafer scrubber apparatus
US20130171832A1 (en) * 2011-12-28 2013-07-04 Intermolecular Inc. Enhanced Isolation For Combinatorial Atomic Layer Deposition (ALD)
US20130269612A1 (en) * 2012-04-16 2013-10-17 Hermes-Epitek Corporation Gas Treatment Apparatus with Surrounding Spray Curtains
JP6010398B2 (ja) * 2012-08-31 2016-10-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5973299B2 (ja) * 2012-09-25 2016-08-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR101512560B1 (ko) 2012-08-31 2015-04-15 가부시키가이샤 스크린 홀딩스 기판처리장치
CN102915909A (zh) * 2012-10-08 2013-02-06 上海华力微电子有限公司 一种改进酸槽式硅片清洗设备内环境的方法
KR101925581B1 (ko) * 2012-11-23 2018-12-05 주식회사 원익아이피에스 챔버 세정 방법
KR101536718B1 (ko) * 2013-01-31 2015-07-15 세메스 주식회사 지지 유닛, 이송 유닛, 기판 처리 장치, 그리고 기판 처리 장치를 이용한 기판 처리 방법
US10707099B2 (en) 2013-08-12 2020-07-07 Veeco Instruments Inc. Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle
CN110060925B (zh) 2014-03-28 2023-02-17 株式会社斯库林集团 基板处理方法
CN104438201A (zh) * 2014-11-26 2015-03-25 乐山新天源太阳能科技有限公司 一种硅料清洗工艺及其设备
TWI582886B (zh) * 2016-01-12 2017-05-11 弘塑科技股份有限公司 單晶圓溼式處理裝置
CN106824884A (zh) * 2017-03-31 2017-06-13 贵州大学 一种硅片翻转冲洗装置
TWI797121B (zh) 2017-04-25 2023-04-01 美商維克儀器公司 半導體晶圓製程腔體
JP2019054112A (ja) * 2017-09-15 2019-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板乾燥装置
JP6442018B2 (ja) * 2017-10-04 2018-12-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6990602B2 (ja) * 2018-02-27 2022-01-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
JP7080331B2 (ja) * 2018-08-22 2022-06-03 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN110148573B (zh) * 2019-04-17 2020-12-04 湖州达立智能设备制造有限公司 一种半导体设备工艺腔的晶圆升降装置
JP7315389B2 (ja) * 2019-06-28 2023-07-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US12198944B2 (en) 2020-11-11 2025-01-14 Applied Materials, Inc. Substrate handling in a modular polishing system with single substrate cleaning chambers
JP7731837B2 (ja) 2022-03-22 2025-09-01 キオクシア株式会社 基板処理装置、基板処理方法および半導体装置の製造方法
US20230415204A1 (en) * 2022-06-23 2023-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Wet cleaning tool and method
CN115143746B (zh) * 2022-07-25 2023-05-12 广东技术师范大学 一种大功率模组生产堆叠式热烘除湿装置
US12224195B2 (en) * 2022-08-02 2025-02-11 Applied Materials, Inc. Centering wafer for processing chamber
KR102870115B1 (ko) * 2022-12-20 2025-10-16 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4519846A (en) * 1984-03-08 1985-05-28 Seiichiro Aigo Process for washing and drying a semiconductor element
US4544446A (en) * 1984-07-24 1985-10-01 J. T. Baker Chemical Co. VLSI chemical reactor
US5235995A (en) * 1989-03-27 1993-08-17 Semitool, Inc. Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization
US4989345A (en) * 1989-12-18 1991-02-05 Gill Jr Gerald L Centrifugal spin dryer for semiconductor wafer
JPH08316190A (ja) * 1995-05-18 1996-11-29 Dainippon Screen Mfg Co Ltd 基板処理装置
US5849135A (en) * 1996-03-12 1998-12-15 The Regents Of The University Of California Particulate contamination removal from wafers using plasmas and mechanical agitation
US6247479B1 (en) * 1997-05-27 2001-06-19 Tokyo Electron Limited Washing/drying process apparatus and washing/drying process method
JP3555724B2 (ja) * 1997-09-04 2004-08-18 大日本スクリーン製造株式会社 基板処理装置
US6270584B1 (en) * 1997-12-03 2001-08-07 Gary W. Ferrell Apparatus for drying and cleaning objects using controlled aerosols and gases
JPH11251289A (ja) * 1998-02-27 1999-09-17 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP3563605B2 (ja) * 1998-03-16 2004-09-08 東京エレクトロン株式会社 処理装置
US5958143A (en) * 1998-04-28 1999-09-28 The Regents Of The University Of California Cleaning process for EUV optical substrates
JP3058152B2 (ja) * 1998-09-10 2000-07-04 東京エレクトロン株式会社 成膜装置及び成膜方法
JP3968869B2 (ja) * 1998-05-13 2007-08-29 東京エレクトロン株式会社 成膜処理方法及び成膜処理装置
US6190732B1 (en) * 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
JP2000182974A (ja) * 1998-12-11 2000-06-30 Tokyo Electron Ltd 枚葉式の熱処理装置
JP3698567B2 (ja) * 1998-10-23 2005-09-21 大日本スクリーン製造株式会社 基板処理装置
JP2000156363A (ja) * 1998-11-19 2000-06-06 Dainippon Screen Mfg Co Ltd 基板乾燥装置
JP2000286267A (ja) * 1999-03-31 2000-10-13 Tokyo Electron Ltd 熱処理方法

Also Published As

Publication number Publication date
US7029538B2 (en) 2006-04-18
SG101461A1 (en) 2004-01-30
IL145118A0 (en) 2002-06-30
EP1213746A2 (de) 2002-06-12
TW518684B (en) 2003-01-21
US20030047192A1 (en) 2003-03-13
JP2002176026A (ja) 2002-06-21
EP1213746B1 (de) 2008-04-16
CN1217386C (zh) 2005-08-31
DE60133618T2 (de) 2008-08-07
US6807974B2 (en) 2004-10-26
KR20020044536A (ko) 2002-06-15
CN1357907A (zh) 2002-07-10
EP1213746A3 (de) 2006-04-05
US20020074020A1 (en) 2002-06-20
DE60133618D1 (de) 2008-05-29
KR100812482B1 (ko) 2008-03-10

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