ATE341099T1 - Verfahren zur anisotropen ätzung von substraten - Google Patents

Verfahren zur anisotropen ätzung von substraten

Info

Publication number
ATE341099T1
ATE341099T1 AT00400462T AT00400462T ATE341099T1 AT E341099 T1 ATE341099 T1 AT E341099T1 AT 00400462 T AT00400462 T AT 00400462T AT 00400462 T AT00400462 T AT 00400462T AT E341099 T1 ATE341099 T1 AT E341099T1
Authority
AT
Austria
Prior art keywords
substrate
etching
excitation power
mixed gas
gas
Prior art date
Application number
AT00400462T
Other languages
English (en)
Inventor
Tamarak Pandhumsoporn
Kevin Yu
Michael Feldbaum
Michel Puech
Original Assignee
Cit Alcatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cit Alcatel filed Critical Cit Alcatel
Application granted granted Critical
Publication of ATE341099T1 publication Critical patent/ATE341099T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
AT00400462T 1999-04-21 2000-02-21 Verfahren zur anisotropen ätzung von substraten ATE341099T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/295,100 US6383938B2 (en) 1999-04-21 1999-04-21 Method of anisotropic etching of substrates

Publications (1)

Publication Number Publication Date
ATE341099T1 true ATE341099T1 (de) 2006-10-15

Family

ID=23136218

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00400462T ATE341099T1 (de) 1999-04-21 2000-02-21 Verfahren zur anisotropen ätzung von substraten

Country Status (5)

Country Link
US (1) US6383938B2 (de)
EP (1) EP1047122B1 (de)
JP (1) JP4601113B2 (de)
AT (1) ATE341099T1 (de)
DE (1) DE60030905T2 (de)

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FR2880469B1 (fr) * 2005-01-03 2007-04-27 Cit Alcatel Dispositif de fabrication d'un masque par gravure par plasma d'un substrat semiconducteur
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US9978606B2 (en) * 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
CN106653594B (zh) * 2015-10-30 2019-05-28 中微半导体设备(上海)股份有限公司 一种在高宽比硅刻蚀中用于提高侧壁刻蚀效果的方法
US9691625B2 (en) * 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
US9607847B1 (en) * 2015-12-18 2017-03-28 Texas Instruments Incorporated Enhanced lateral cavity etch
WO2018048925A1 (en) * 2016-09-06 2018-03-15 Tokyo Electron Limited Method of quasi atomic layer etching
US9941121B1 (en) 2017-01-24 2018-04-10 International Business Machines Corporation Selective dry etch for directed self assembly of block copolymers
WO2019219255A1 (en) * 2018-05-17 2019-11-21 Evatec Ag Method of treating a substrate and vacuum deposition apparatus
US11393703B2 (en) 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
TWI906382B (zh) * 2020-10-19 2025-12-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
JP7692696B2 (ja) * 2020-10-19 2025-06-16 東京エレクトロン株式会社 基板処理方法および基板処理装置
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CN117080062B (zh) * 2023-10-13 2024-01-26 无锡邑文微电子科技股份有限公司 碗状刻蚀的方法
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Also Published As

Publication number Publication date
EP1047122A3 (de) 2001-12-05
US20010044213A1 (en) 2001-11-22
EP1047122A2 (de) 2000-10-25
JP4601113B2 (ja) 2010-12-22
DE60030905T2 (de) 2007-09-20
US6383938B2 (en) 2002-05-07
JP2000323454A (ja) 2000-11-24
EP1047122B1 (de) 2006-09-27
DE60030905D1 (de) 2006-11-09

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