ATE395632T1 - Verfahren zur bestimmung einer optimalen resistdicke - Google Patents

Verfahren zur bestimmung einer optimalen resistdicke

Info

Publication number
ATE395632T1
ATE395632T1 AT04769111T AT04769111T ATE395632T1 AT E395632 T1 ATE395632 T1 AT E395632T1 AT 04769111 T AT04769111 T AT 04769111T AT 04769111 T AT04769111 T AT 04769111T AT E395632 T1 ATE395632 T1 AT E395632T1
Authority
AT
Austria
Prior art keywords
resist film
substrate
thickness
determining
periodicity
Prior art date
Application number
AT04769111T
Other languages
English (en)
Inventor
David Ziger
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE395632T1 publication Critical patent/ATE395632T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
AT04769111T 2003-08-08 2004-08-07 Verfahren zur bestimmung einer optimalen resistdicke ATE395632T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49369803P 2003-08-08 2003-08-08
US51271703P 2003-10-20 2003-10-20

Publications (1)

Publication Number Publication Date
ATE395632T1 true ATE395632T1 (de) 2008-05-15

Family

ID=34138761

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04769111T ATE395632T1 (de) 2003-08-08 2004-08-07 Verfahren zur bestimmung einer optimalen resistdicke

Country Status (8)

Country Link
US (1) US7492465B2 (de)
EP (1) EP1654591B1 (de)
KR (1) KR20060063942A (de)
CN (1) CN100555080C (de)
AT (1) ATE395632T1 (de)
DE (1) DE602004013794D1 (de)
TW (1) TW200512927A (de)
WO (1) WO2005015312A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7171311B2 (en) 2001-06-18 2007-01-30 Rosetta Inpharmatics Llc Methods of assigning treatment to breast cancer patients
ATE418749T1 (de) 2003-10-20 2009-01-15 Nxp Bv Verfahren zur bestimmung der relativen auslenkkurvenamplitude
US7582413B2 (en) 2005-09-26 2009-09-01 Asml Netherlands B.V. Substrate, method of exposing a substrate, machine readable medium
EP2899498B1 (de) * 2014-01-28 2020-03-11 ABB Schweiz AG Sensorsystem und Verfahren zur Charakterisierung eines beschichteten Körpers
EP2899497B1 (de) * 2014-01-28 2019-03-13 ABB Schweiz AG Sensorsystem und Verfahren zur Charakterisierung einer nassen Farbschicht

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3714430B2 (ja) * 1996-04-15 2005-11-09 シャープ株式会社 分布帰還型半導体レーザ装置
US5916717A (en) * 1998-03-19 1999-06-29 Industrial Technology Research Institute Process utilizing relationship between reflectivity and resist thickness for inhibition of side effect caused by halftone phase shift masks
US6252670B1 (en) * 1999-10-29 2001-06-26 Taiwan Semiconductor Manufacturing Company Method for accurately calibrating a constant-angle reflection-interference spectrometer (CARIS) for measuring photoresist thickness
CN1330287A (zh) * 2000-06-21 2002-01-09 中国科学院光电技术研究所 衰减相移掩模及其制作方法
JP2002277220A (ja) * 2001-03-19 2002-09-25 Hitachi Ltd 膜厚計測のための計測点決定方法およびそれを用いた薄膜デバイスの製造方法並びに薄膜デバイスの製造装置
KR100783603B1 (ko) * 2002-01-05 2007-12-07 삼성전자주식회사 포토레지스트 조성물 및 이를 사용한 패턴의 형성방법

Also Published As

Publication number Publication date
KR20060063942A (ko) 2006-06-12
CN1864101A (zh) 2006-11-15
WO2005015312A2 (en) 2005-02-17
US7492465B2 (en) 2009-02-17
US20080206687A1 (en) 2008-08-28
WO2005015312A3 (en) 2006-03-23
EP1654591B1 (de) 2008-05-14
DE602004013794D1 (de) 2008-06-26
CN100555080C (zh) 2009-10-28
TW200512927A (en) 2005-04-01
EP1654591A2 (de) 2006-05-10

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Legal Events

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