ATE396497T1 - Dickenmessvorrichtung, dickenmessverfahren und nassätzvorrichtung und nassätzverfahren, die diese verwenden - Google Patents

Dickenmessvorrichtung, dickenmessverfahren und nassätzvorrichtung und nassätzverfahren, die diese verwenden

Info

Publication number
ATE396497T1
ATE396497T1 AT01900776T AT01900776T ATE396497T1 AT E396497 T1 ATE396497 T1 AT E396497T1 AT 01900776 T AT01900776 T AT 01900776T AT 01900776 T AT01900776 T AT 01900776T AT E396497 T1 ATE396497 T1 AT E396497T1
Authority
AT
Austria
Prior art keywords
wet etching
light
thickness measuring
thickness
light intensity
Prior art date
Application number
AT01900776T
Other languages
English (en)
Inventor
Teruo Takahashi
Motoyuki Watanabe
Hidenori Takahashi
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000013151A external-priority patent/JP4347484B2/ja
Priority claimed from JP2000371621A external-priority patent/JP4347517B2/ja
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Application granted granted Critical
Publication of ATE396497T1 publication Critical patent/ATE396497T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Weting (AREA)
  • A Measuring Device Byusing Mechanical Method (AREA)
  • Processing Of Meat And Fish (AREA)
  • Length-Measuring Instruments Using Mechanical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AT01900776T 2000-01-21 2001-01-16 Dickenmessvorrichtung, dickenmessverfahren und nassätzvorrichtung und nassätzverfahren, die diese verwenden ATE396497T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000013151A JP4347484B2 (ja) 2000-01-21 2000-01-21 厚み計測装置、及びそれを用いたウエットエッチング装置、ウエットエッチング方法
JP2000371621A JP4347517B2 (ja) 2000-12-06 2000-12-06 厚み計測装置、及びそれを用いたウエットエッチング装置、ウエットエッチング方法

Publications (1)

Publication Number Publication Date
ATE396497T1 true ATE396497T1 (de) 2008-06-15

Family

ID=26583934

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01900776T ATE396497T1 (de) 2000-01-21 2001-01-16 Dickenmessvorrichtung, dickenmessverfahren und nassätzvorrichtung und nassätzverfahren, die diese verwenden

Country Status (6)

Country Link
US (1) US6897964B2 (de)
EP (1) EP1258916B1 (de)
AT (1) ATE396497T1 (de)
AU (1) AU2001225543A1 (de)
DE (1) DE60134120D1 (de)
WO (1) WO2001059830A1 (de)

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* Cited by examiner, † Cited by third party
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JP2003315017A (ja) * 2002-04-25 2003-11-06 Hamamatsu Photonics Kk 厚み計測装置
EP1569547A1 (de) * 2002-10-16 2005-09-07 Campbell Science Group, Inc. Vorrichtung zur messung vonhornhauteigenschaften
US7130061B2 (en) * 2003-03-31 2006-10-31 Council Of Scientific And Industrial Research System and method for monitoring properties of a medium by fiber optics
GB0415766D0 (en) * 2004-07-14 2004-08-18 Taylor Hobson Ltd Apparatus for and a method of determining a characteristic of a layer or layers
CN100516772C (zh) * 2004-09-09 2009-07-22 鸿富锦精密工业（深圳）有限公司 光学信号处理装置及方法
TWI247096B (en) * 2004-12-17 2006-01-11 Hon Hai Prec Ind Co Ltd Optical fiber interference device used for thickness measuring and the method of the same
CN100395516C (zh) * 2004-12-25 2008-06-18 鸿富锦精密工业（深圳）有限公司 光纤干涉式厚度测量装置
JP2007204286A (ja) * 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法
US20090065478A1 (en) * 2007-09-11 2009-03-12 Dockery Kevin P Measuring etching rates using low coherence interferometry
JP5490462B2 (ja) * 2009-08-17 2014-05-14 横河電機株式会社 膜厚測定装置
DE102010015944B4 (de) * 2010-01-14 2016-07-28 Dusemund Pte. Ltd. Dünnungsvorrichtung mit einer Nassätzeinrichtung und einer Überwachungsvorrichtung sowie Verfahren für ein in-situ Messen von Waferdicken zum Überwachen eines Dünnens von Halbleiterwafern
GB2478590A (en) * 2010-03-12 2011-09-14 Precitec Optronik Gmbh Apparatus and method for monitoring a thickness of a silicon wafer
FR2959305B1 (fr) * 2010-04-26 2014-09-05 Nanotec Solution Dispositif optique et procede d'inspection d'objets structures.
KR101233687B1 (ko) * 2010-10-28 2013-02-15 삼성디스플레이 주식회사 유리 기판 식각 장치
WO2012071753A1 (zh) * 2010-11-30 2012-06-07 深圳市华星光电技术有限公司 金属蚀刻方法、金属蚀刻控制方法及其装置
GB2489722B (en) 2011-04-06 2017-01-18 Precitec Optronik Gmbh Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
DE102011051146B3 (de) 2011-06-17 2012-10-04 Precitec Optronik Gmbh Prüfverfahren zum Prüfen einer Verbindungsschicht zwischen waferförmigen Proben
JP6150490B2 (ja) * 2012-10-19 2017-06-21 キヤノン株式会社 検出装置、露光装置、それを用いたデバイスの製造方法
DE102012111008B4 (de) 2012-11-15 2014-05-22 Precitec Optronik Gmbh Optisches Messverfahren und optische Messvorrichtung zum Erfassen einer Oberflächentopographie
JP6107353B2 (ja) * 2013-04-12 2017-04-05 株式会社島津製作所 表面処理状況モニタリング装置
DE102014008584B4 (de) 2013-06-17 2021-05-27 Precitec Optronik Gmbh Optische Messvorrichtung zum Erfassen von Abstandsdifferenzen und optisches Messverfahren
ITBO20130403A1 (it) * 2013-07-26 2015-01-27 Marposs Spa Metodo e apparecchiatura per il controllo ottico mediante interferometria dello spessore di un oggetto in lavorazione
CN107258011A (zh) 2014-10-31 2017-10-17 维克精密表面处理有限责任公司 执行湿蚀刻工艺的系统和方法
TWI629720B (zh) * 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
US10207489B2 (en) * 2015-09-30 2019-02-19 Sigma Labs, Inc. Systems and methods for additive manufacturing operations
TWI738757B (zh) * 2016-04-05 2021-09-11 美商維克儀器公司 經由化學的適應性峰化來控制蝕刻速率的裝置和方法
US10234265B2 (en) 2016-12-12 2019-03-19 Precitec Optronik Gmbh Distance measuring device and method for measuring distances
EP3590128A1 (de) 2017-03-03 2020-01-08 Veeco Precision Surface Processing LLC Vorrichtung und verfahren zur waferdünnung in verbesserten verpackungsanwendungen
DE102017126310A1 (de) 2017-11-09 2019-05-09 Precitec Optronik Gmbh Abstandsmessvorrichtung
DE102018117470B4 (de) * 2018-07-19 2025-07-24 Carl Zeiss Microscopy Gmbh Verfahren zur Bestimmung von Dicke und Brechzahl einer Schicht
CN110797272B (zh) * 2018-08-01 2022-08-26 上海祖强能源有限公司 芯片切割方法及芯片切割装置
DE102018130901A1 (de) 2018-12-04 2020-06-04 Precitec Optronik Gmbh Optische Messeinrichtung
CN111426273A (zh) * 2019-01-29 2020-07-17 法国圣戈班玻璃公司 用于测量基质的厚度的测量方法和测量装置
JP7383339B2 (ja) * 2019-10-16 2023-11-20 株式会社ディスコ 被加工物の加工方法及び加工装置
US12467733B2 (en) 2020-06-19 2025-11-11 Precitec Optronik Gmbh Chromatic confocal measuring device
CN112599458A (zh) * 2021-03-03 2021-04-02 西安奕斯伟硅片技术有限公司 硅片刻蚀装置和方法
CN121548237B (zh) * 2026-01-19 2026-04-21 合肥晶合集成电路股份有限公司 一种用于硅片表面刻蚀的光照装置、使用方法及刻蚀系统

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US5220405A (en) 1991-12-20 1993-06-15 International Business Machines Corporation Interferometer for in situ measurement of thin film thickness changes
US5392124A (en) * 1993-12-17 1995-02-21 International Business Machines Corporation Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control
US5956142A (en) * 1997-09-25 1999-09-21 Siemens Aktiengesellschaft Method of end point detection using a sinusoidal interference signal for a wet etch process
JPH11354489A (ja) * 1998-06-05 1999-12-24 Toshiba Corp 半導体製造装置及び半導体装置のエッチング方法
JP4486217B2 (ja) * 2000-05-01 2010-06-23 浜松ホトニクス株式会社 厚み計測装置、及びそれを用いたウエットエッチング装置、ウエットエッチング方法

Also Published As

Publication number Publication date
EP1258916A4 (de) 2006-10-25
EP1258916B1 (de) 2008-05-21
WO2001059830A1 (en) 2001-08-16
EP1258916A1 (de) 2002-11-20
US20030090671A1 (en) 2003-05-15
US6897964B2 (en) 2005-05-24
AU2001225543A1 (en) 2001-08-20
DE60134120D1 (de) 2008-07-03

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