ATE358892T1 - Dickemessvorrichtung, dickemessverfahren und nassätzvorrichtung und nassätzverfahren damit - Google Patents

Dickemessvorrichtung, dickemessverfahren und nassätzvorrichtung und nassätzverfahren damit

Info

Publication number
ATE358892T1
ATE358892T1 AT01901468T AT01901468T ATE358892T1 AT E358892 T1 ATE358892 T1 AT E358892T1 AT 01901468 T AT01901468 T AT 01901468T AT 01901468 T AT01901468 T AT 01901468T AT E358892 T1 ATE358892 T1 AT E358892T1
Authority
AT
Austria
Prior art keywords
wet etching
thickness
light
thickness measurement
thickness value
Prior art date
Application number
AT01901468T
Other languages
English (en)
Inventor
Teruo Takahashi
Motoyuki Watanabe
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Application granted granted Critical
Publication of ATE358892T1 publication Critical patent/ATE358892T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Weting (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Length-Measuring Instruments Using Mechanical Means (AREA)
  • A Measuring Device Byusing Mechanical Method (AREA)
AT01901468T 2000-05-01 2001-01-19 Dickemessvorrichtung, dickemessverfahren und nassätzvorrichtung und nassätzverfahren damit ATE358892T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000132607A JP4486217B2 (ja) 2000-05-01 2000-05-01 厚み計測装置、及びそれを用いたウエットエッチング装置、ウエットエッチング方法

Publications (1)

Publication Number Publication Date
ATE358892T1 true ATE358892T1 (de) 2007-04-15

Family

ID=18641274

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01901468T ATE358892T1 (de) 2000-05-01 2001-01-19 Dickemessvorrichtung, dickemessverfahren und nassätzvorrichtung und nassätzverfahren damit

Country Status (7)

Country Link
US (1) US6768552B2 (de)
EP (1) EP1296367B1 (de)
JP (1) JP4486217B2 (de)
AT (1) ATE358892T1 (de)
AU (1) AU2001227075A1 (de)
DE (1) DE60127673T2 (de)
WO (1) WO2001084620A1 (de)

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ATE396497T1 (de) * 2000-01-21 2008-06-15 Hamamatsu Photonics Kk Dickenmessvorrichtung, dickenmessverfahren und nassätzvorrichtung und nassätzverfahren, die diese verwenden
GB2404787B (en) * 2000-07-05 2005-04-13 Metryx Ltd Apparatus and method for investigating semiconductor wafers
GB0016562D0 (en) 2000-07-05 2000-08-23 Metryx Limited Apparatus and method for investigating semiconductor wafers
JP2003307458A (ja) * 2002-04-15 2003-10-31 Akifumi Ito 基材の温度測定方法および温度測定装置
JP2003315017A (ja) * 2002-04-25 2003-11-06 Hamamatsu Photonics Kk 厚み計測装置
US7116429B1 (en) * 2003-01-18 2006-10-03 Walecki Wojciech J Determining thickness of slabs of materials by inventors
US7256104B2 (en) * 2003-05-21 2007-08-14 Canon Kabushiki Kaisha Substrate manufacturing method and substrate processing apparatus
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DE102004045956B4 (de) * 2004-09-22 2008-12-11 Universität des Saarlandes Ätzhalterung für ein Substrat und Ätzsystem mit einer Ätzhalterung
US7502121B1 (en) * 2004-11-24 2009-03-10 Ahbee 1, L.P. Temperature insensitive low coherence based optical metrology for nondestructive characterization of physical characteristics of materials
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JP2008012542A (ja) * 2006-07-03 2008-01-24 Hamamatsu Photonics Kk レーザ加工方法
JP4939304B2 (ja) * 2007-05-24 2012-05-23 東レエンジニアリング株式会社 透明膜の膜厚測定方法およびその装置
GB0719469D0 (en) 2007-10-04 2007-11-14 Metryx Ltd Measurement apparatus and method
GB0719460D0 (en) 2007-10-04 2007-11-14 Metryx Ltd Measurement apparatus and method
DE102007048295A1 (de) 2007-10-08 2009-04-16 Precitec Optronik Gmbh Vorrichtung und Verfahren zur Dickenmessung
JP5112930B2 (ja) * 2008-03-28 2013-01-09 浜松ホトニクス株式会社 厚み計測装置
IT1391719B1 (it) * 2008-11-17 2012-01-27 Marposs Spa Metodo, stazione ed apparecchiatura per la misura ottica mediante interferometria dello spessore di un oggetto
GB2478590A (en) 2010-03-12 2011-09-14 Precitec Optronik Gmbh Apparatus and method for monitoring a thickness of a silicon wafer
IT1399876B1 (it) * 2010-05-18 2013-05-09 Marposs Spa Metodo e apparecchiatura per la misura ottica mediante interferometria dello spessore di un oggetto
IT1399875B1 (it) * 2010-05-18 2013-05-09 Marposs Spa Metodo e apparecchiatura per la misura ottica mediante interferometria dello spessore di un oggetto
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JP5853382B2 (ja) * 2011-03-11 2016-02-09 ソニー株式会社 半導体装置の製造方法、及び電子機器の製造方法
GB2489722B (en) * 2011-04-06 2017-01-18 Precitec Optronik Gmbh Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
DE102011051146B3 (de) 2011-06-17 2012-10-04 Precitec Optronik Gmbh Prüfverfahren zum Prüfen einer Verbindungsschicht zwischen waferförmigen Proben
JP2013130417A (ja) * 2011-12-20 2013-07-04 Nippon Electric Glass Co Ltd ガラス板の反り測定方法およびガラス板の製造方法
CN202601580U (zh) * 2012-03-31 2012-12-12 北京京东方光电科技有限公司 一种刻蚀时间检测装置及刻蚀设备
DE102012111008B4 (de) 2012-11-15 2014-05-22 Precitec Optronik Gmbh Optisches Messverfahren und optische Messvorrichtung zum Erfassen einer Oberflächentopographie
TWI638131B (zh) 2013-06-17 2018-10-11 普雷茨特光電有限公司 用於獲取距離差之光學量測裝置及光學量測方法
JP6289930B2 (ja) * 2014-02-18 2018-03-07 株式会社ディスコ ウェットエッチング装置
US10551165B2 (en) 2015-05-01 2020-02-04 Adarza Biosystems, Inc. Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings
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TWI629720B (zh) * 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
JP2018024571A (ja) * 2016-08-05 2018-02-15 旭硝子株式会社 孔を有するガラス基板の製造方法
US10234265B2 (en) 2016-12-12 2019-03-19 Precitec Optronik Gmbh Distance measuring device and method for measuring distances
CN110383428B (zh) * 2017-03-10 2023-04-04 三菱电机株式会社 半导体制造装置以及半导体制造方法
DE102017126310A1 (de) 2017-11-09 2019-05-09 Precitec Optronik Gmbh Abstandsmessvorrichtung
WO2020070884A1 (ja) * 2018-10-05 2020-04-09 三菱電機株式会社 工作装置
DE102018130901A1 (de) 2018-12-04 2020-06-04 Precitec Optronik Gmbh Optische Messeinrichtung
JP7166966B2 (ja) 2019-03-15 2022-11-08 株式会社Ｓｃｒｅｅｎホールディングス 処理条件選択方法、基板処理方法、基板製品製造方法、処理条件選択装置、コンピュータープログラム、および、記憶媒体
PL3786574T3 (pl) * 2019-08-26 2025-03-31 Sturm Maschinen- & Anlagenbau Gmbh Urządzenie czujnikowe
CN110690134B (zh) * 2019-09-12 2022-07-01 长江存储科技有限责任公司 多站式沉积工艺的串气检测方法、设备及可读存储介质
EP4168734B1 (de) 2020-06-19 2025-09-24 Precitec Optronik GmbH Chromatisch konfokale messvorrichtung
CN114038777B (zh) * 2022-01-11 2022-04-08 江苏卓远半导体有限公司 一种半导体晶片测厚设备
DE102024202639A1 (de) * 2024-03-20 2025-09-25 Semsysco Gmbh System und Verfahren zur nasschemischen Behandlung einer Substratoberfläche
CN117968545B (zh) * 2024-03-28 2024-09-24 钛玛科（北京）工业科技有限公司 带花纹发泡棉的厚度测量方法及系统

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Also Published As

Publication number Publication date
EP1296367B1 (de) 2007-04-04
AU2001227075A1 (en) 2001-11-12
DE60127673T2 (de) 2007-12-27
WO2001084620A1 (en) 2001-11-08
JP2001313279A (ja) 2001-11-09
EP1296367A4 (de) 2005-06-15
EP1296367A1 (de) 2003-03-26
JP4486217B2 (ja) 2010-06-23
US20030121889A1 (en) 2003-07-03
DE60127673D1 (de) 2007-05-16
US6768552B2 (en) 2004-07-27

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